3
1997 Fairchild Semiconductor Corporation
BC846A / BC846B / BC847A / BC847B / BC847C
NPN General Purpose Amplifier
This device is designed for low noise, high gain, general purpose
amplifier applications at collector currents from 1.0 µA to 50 mA.
Sourced from Process 07.
Absolute Maximum Ratings* T A = 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics T A = 25°C unless otherwise noted
Symbol Parameter Value Units
VCEO Collector-Em itter Vol t age BC846 series
BC847 series 65
45 V
V
VCES Collector-Base Voltage BC846 series
BC847 series 80
50 V
V
VEBO Emitter-Base Voltage 6.0 V
ICCollector Current - Continuo us 100 mA
TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C
Symbol Characteristic Max Units
*BC846 / BC847
PDTotal D evice Dissipation
Derate above 25°C325
2.8 mW
mW/°C
RθJA Thermal Resistance, Junctio n to Ambien t 357 °C/W
BC847A
BC847B
BC847C
SOT-23
Mark: 1E. / 1F. / 1G.
C
B
E
C
B
E
BC846A
BC846B
SOT-23
Mark: 1A. / 1B.
*Device mounted on FR-4 PCB 40 mm X 40 mm X 1.5 mm.
Typical Characteristics
Electrical Characteristics T A = 25°C unless otherwise noted
OFF CHARACTERISTICS
Symbol Parameter Test Conditions Min Max Units
V(BR)CEO Collector-Emitter Breakdown
Voltage IC = 10 m A , IB = 0 846A / B
847A / B 65
45 V
V(BR)CES Collector-Base B reak down Voltage IC = 10 µA, IE = 0 846A / B
847A / B 80
50 V
V(BR)EBO E mitter-Base Break down Voltage IE = 10 µA, IC = 0 6.0 V
ICBO Collector-Cutoff Current VCB = 30 V
VCB = 30 V, TA = 150°C15
5.0 nA
µA
ON CHARACTERISTICS
hFE DC Current Gain IC = 2.0 mA, VCE = 5.0 V
846A / 847A
846B / 847B
847C
110
200
420
220
450
800
VCE(sat)Collector-Emitt er S aturation Voltage I C = 10 mA, IB = 0.5 m A
IC = 100 mA, IB = 5.0 mA 0.25
0.6 V
V
VBE(on)Base-Emitter On Voltage IC = 2.0 mA, VCE = 5.0 V
IC = 10 mA, V CE = 5. 0 V 0.58 0.70
0.77 V
V
SMALL SIGNAL CHARACTERISTICS
fTCurrent Gain - Bandwidth Product IC = 10 mA, VCE = 5.0,
f = 100 MHz 100 MHz
Cobo Output Ca pacitance VCB = 10 V, f = 1.0 MHz 4.5 pF
NF Noise Figure IC = 0.2 mA, VCE = 5.0,
RS = 2.0 kΩ, f = 1.0 kHz,
BW = 200 Hz
10 dB
Co llector-E mitter Sa turati on
Vol t a ge vs Collector C u r rent
0.1 1 10 100
0.05
0.1
0.15
0.2
0.25
0.3
I - CO L LECTO R CURRE NT (mA)
V - COLLEC TO R- EM ITT ER VOLT AGE (V)
C
CESAT
25 °C
- 40 °C
125 °C
β = 10
Typical Pulsed Current Gain
vs Collector Curr ent
0.01 0.03 0.1 0.3 1 3 10 30 100
0
200
400
600
800
1000
1200
I - COLLECTOR CURRENT ( mA)
h - TYPI CAL PUL SED CURRENT GAI N
C
FE
125 °C
25 °C
- 4 0 °C
V = 5. 0 V
CE
BC846A / BC846B / BC847A / BC847B / BC847C
NPN General Purpose Amplifier
(continued)
3
BC846A / BC846B / BC847A / BC847B / BC847C
Typical Characteristics
NPN General Purpose Amplifier
(continued)
Inp ut and Ou tput Capac itance
vs Reverse Bias Voltage
048121620
0
1
2
3
4
5
REVERSE BIAS VOLTA GE (V)
CAPACITANCE (pF)
f = 1.0 MH z
Cob
C
te
Wide band Noi s e Freque ncy
vs Source Resistanc e
1,000 2,000 5,000 10,000 20,000 50,000 100,000
0
1
2
3
4
5
R - SOURCE RESIST ANCE ( )
N F - NO IS E F IG U RE (d B)
V = 5.0 V
BA NDWIDTH = 1 5.7 kHz
CE
I = 10 µA
C
I = 100 µA
C
SΩ
I = 30 µA
C
Base- Emitter S aturati on
Vol t age vs C ol lect or Current
0.1 1 10 100
0.2
0.4
0.6
0.8
1
I - CO L LECTOR CURRENT (m A)
V - COLLECTOR-EMITTER VOLTAG E (V)
C
BESAT
β = 10
25 °C
- 40 °C
125 °C
Base-Emitter ON Voltage vs
Collector Current
0.1 1 10 40
0.2
0.4
0.6
0.8
1
I - COLLEC TOR CUR RENT (m A)
V - BASE- EMITTER ON VOLTAGE (V)
C
BEON
V = 5.0 V
CE
25 °C
- 40 °C
125 °C
Collector-Cutoff Curre nt
vs Amb ient Temp erat u re
25 50 75 100 125 150
0.1
1
10
T - AM BIE NT TE M P ERATURE ( C)
I - COLLECTOR CURRENT (nA)
A
CBO
V = 45V
°
CB
No rmal ized Col lecto r-Cutoff C urr en t
vs A mbient Temp er ature
25 50 75 100 125 150
1
10
100
1000
T - AMBIENT TEMPER ATUR E ( C)
CH AR AC TERISTIC S R ELATIVE TO VALU E AT T = 25 C
A
A
°
°
Contours of Constant Gain
B andw i dt h Pr oduct (f )
0.1 1 10 100
1
2
3
5
7
10
I - CO LLECTOR CUR RENT (m A)
V - COLLECTOR VOLTAGE (V)
C
17 5 MHz
T
CE
15 0 MHz
12 5 MHz
75 MHz
10 0 MHz
Typical Characteristics (continued)
Contour s of Constant
Narrow Band Noise Fi gure
1 10 100 1,000
100
200
500
1,000
2,000
5,000
10,000
I - COLLEC TO R CURRE NT ( A)
R - SOURCE RESISTANCE ( )
µ
C
Ω
S
V = 5.0 V
f = 1.0 kHz
BANDWIDT H
= 200 H z
CE
6. 0 dB
3. 0 dB
4. 0 dB
8. 0 dB
2. 0 dB
Cont ours of Co ns t a nt
Narrow Band Noise Fi gur e
1 10 100 1,000
100
200
500
1,000
2,000
5,000
10,000
I - CO LLECTOR CURRENT ( A)
R - SOU RC E RESISTANCE ( )
µ
C
Ω
S
V = 5.0 V
f = 1 00 Hz
BANDWIDT H
= 20 Hz
CE
3. 0 dB
4. 0 dB
8. 0 dB
10 dB
12 dB
14 dB
6. 0 dB
Contours of Con stant
Narr ow Band No ise Figu r e
1 10 100 1000
100
200
500
1000
2000
5000
10000
I - COLLECTOR CURR ENT ( A)
R - SOURCE RESISTANCE ( )
6.0 dB
3.0 dB
4.0 dB
8.0 dB
2.0 dB
1.0 dB
C
V = 5.0V
f = 10kH z
BANDWIDTH
= 2. 0k Hz
CE
Ω
S
µ
Contours of Constant
Na rrow Ba nd Noise Figure
0.01 0.1 1 10
100
200
500
1000
2000
5000
10000
I - COLLECTOR CURR ENT ( A )
R - SOURC E RESISTAN CE ( )
7.0 dB
3.0 dB
4.0 dB
8.0 dB
2.0 dB
5.0
dB
C
V =
5.0V
CE
Ω
S
µ
f = 1.0 MHz
BANDWI DT H
= 200kHz
6.0
dB
Noise Figu re vs Frequency
0.0001 0.001 0.01 0.1 1 10 100
0
2
4
6
8
10
f - FREQUENC Y (M Hz )
N F - NO IS E F IG U RE (d B)
V = 5.0V
CE
I = 200 µA,
R = 10 kΩ
C
S
I = 1.0 mA,
R = 500 Ω
C
S
I = 100 µA,
R = 10 kΩ
C
S
I = 1.0 mA,
R = 5.0 kΩ
CS
BC846A / BC846B / BC847A / BC847B / BC847C
NPN General Purpose Amplifier
(continued)
3
BC846A / BC846B / BC847A / BC847B / BC847C
NPN General Purpose Amplifier
(continued)
Typical Common Emitter Characteristics (f = 1.0 kHz)
T yp ical Common Emitter Characteristics
0.1 0.2 0.5 1 2 5 10 20 50 100
0.01
0.1
1
10
100
I - COLLECTOR CURRENT (mA)
CHARACT ERIS TI CS RELA T IVE TO VAL U E( I =1mA)
C
C
f = 1.0kHz hoe
hoe
h and h
ie
hfe
hre
h ie h fe
re
Typical Common E mi tter Characteristics
-100 -50 0 50 100 150
0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
1.3
1.4
1.5
T - JUNC TIO N TEM P ERATURE ( C)
CHARACTE RISTICS RELATIV E TO VALUE(T =25 C)
J
A
°
h oe
h re h ie
h fe
h oe
h re
h ie
h fe
V = 5 .0V
f = 1. 0kHz
I = 1 .0m A
CE
C
°
Typical C o mmo n Emitter Characteristics
0 5 10 15 20 25
0.8
0.9
1
1.1
1.2
1.3
1.4
V - COLLECTOR VOLTAGE (V )
CHARA CTERISTICS RELATI VE TO VA LUE(V =5V)
CE
CE
I = 1 .0mA
f = 1. 0kHz
T = 25 C
C
A°
h oe
h oe
h re
h ie
h fe
h re
h ie
h fe
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT ST A TUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Formative or
In Design
First Production
Full Production
Not In Production
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICA TION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
PowerTrench
QFET™
QS™
QT Optoelectronics™
Quiet Series™
SILENT SWITCHER
SMART ST ART™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
FASTr™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
MICROWIRE™
OPTOLOGIC™
OPTOPLANAR™
PACMAN™
POP™
Rev . G
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
DOME™
E2CMOSTM
EnSignaTM
FACT™
F ACT Quiet Series™
FAST
SyncFET™
TinyLogic™
UHC™
VCX™
