FEATURES
• Low RDS(on)
• Ease of Paralleling
• Qualified to MIL-PRF-19500/543
DESCRIPTION
This hermetically packaged QPL product features the latest advanced MOSFET technology. It is ideally suited for
Military requirements where small size, high performance and high reliability are required, and in applications such as
switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits.
7 03 R0
100V Thru 500V, Up to 38A, N-Channel,
Enhancement Mode MOSFET Power Transistor
JANTX, JANTXV POWER MOSFET IN TO-204 PACKAGE,
QUALIFIED TO MIL-PRF-19500/543
1.197
1.177
0.675
0.655
0.188 R.
MAX.
0.440
0.420
0.161
0.151 0.525 R.
MAX.
0.225
0.205
SEATING
PLANE
0.312
MIN.
0.450
0.250
0.043
0.038
2 PLCS.
0.135
MAX.
0.875
MAX.
1.53
REF.
MECHANICAL OUTLINESCHEMATIC
Pin Connection
Pin 1: Drain
Pin 2: Source
Pin 3: Gate
PRIMARY ELECTRICAL CHARACTERISTICS @ TC= 25
°
C
PART NUMBER VDS, V olts R DS(on) I
D, Amps
2N6764 100 .055 38
2N6766 200 .085 30
2N6768 400 .30 14
2N6770 500 .40 12
2N6764, JANTX2N6764, JANTXV2N6764 2N6768, JANTX2N6768, JANTXV2N6768
2N6766, JANTX2N6766, JANTXV2N6766 2N6770, JANTX2N6770, JANTXV2N6770
Note: For part number 2N6764 and 2N6766 the mechanical dimensions are the same as above
except the lead diameter is 0.058 min to 0.063 max.
Parameter Min. Typ. Max. Units Test Conditions
BVDSS Drain-Source 100 V V GS = 0V, I D=1.0 mA,
Breakdown Voltage
RDS(on) Static Drain-to-Source ------ 0.055 V GS = 10 V, I D= 24 A 3
On-State Resistance ------ 0.065 V GS = 10 V, I D= 38 A 3
VGS(th) Gate Threshold Voltage 2.0 --- 4.0 V V DS = VGS
, ID= 250 µA
I
DSS Zero Gate Voltage Drain ------ 25 µA VDS = 80 V, VGS = 0V
Current ------ 250 VDS = 80 V, V GS = 0V, T J= 125°C
I
GSS Gate -to-Source Leakage Forward ------ 100 nA VGS = 20 V
I
GSS Gate -to-Source Leakage Reverse ------ -100 nA V GS = -20 V
QG(on) On-state Gate Charge 50 --- 125 nC VGS = 10 V, I D= 38A
QGS Gate-to-Source Charge 8 ---22nCV
DS = 50 V
QGd Gate-to-Drain (“Miller”) Charge 25 --- 65 n C See note 4
t
D(on) Turn-On Delay Time ------35nsV
DD = 50 V, I D= 38A, RG =2.35
t
rRise Time ------ 190 ns See note 4
t
D(off) Turn-Off Delay Time ------ 170 ns
t
rFall Time ------ 130 ns
Source-Drain Diode Ratings and Characteristics
Parameter Min. Typ. Max. Units Test Conditions
VSD Diode Forward Voltage ------ 1.9 V T J= 25°C, IS= 38A 3, VGS= 0 V
t
trr Reverse Recovery Time ------ 500 ns TJ= 25°C, IF= 38A,d i/dt< 100A/µs 3
Thermal Resistance
Parameter Min. Typ. Max. Units Test Conditions
RthJC Junction-to-Case ------ 0.83 Mounting surface flat,
RthCS Case-to-sink --- 0.21 --- °C/W smooth, and greased
RthJA Junction-to-Ambient ------ 48 Typical socket mount
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. @VDD
= 50V, Starting TJ= 25 °C, L = 100 µH + 10%, RG = 25 , Peak IL = 38A
3. Pulse width < 300 µs; Duty Cycle < 2%
4. See MIL-S-19500/543
205 Crawford Street, Leominster, MA 01 453 USA (508) 534-5776 FAX (508) 537-4246
Parameter JANTXV, JANTX, 2N6764 Units
I
D @ VGS = 10V, TC= 25°C Continuous Drain Current 38 A
I
D @ VGS = 10V, TC= 100°C Continuous Drain Current 24 A
I
DM Pulsed Drain Current1152 A
PD@ TC= 25°C Maximum Power Dissipation 150 W
Linear Derating Factor 1.2 W/°C
VGS Gate-Source Voltage ± 20 V
EAS Single Pulse Avalanche Energy 2150 4mJ
I
AR Avalanche Current138 4A
TJOperating Junction -55 to 150 °C
TSTG Storage Temperature Range
Lead Temperature 300(.06 from case for 10 sec) °C
ELECTRICAL CHARACTERISTICS @ TJ = 25°C (Unless Otherwise Specified)
ABSOLUTE MAXIMUM RATINGS (TC= 25°C unless otherwise noted
2N6764, JANTX2N6764, JANTXV2N6764 2N6768, JANTX2N6768, JANTXV2N6768
2N6766, JANTX2N6766, JANTXV2N6766 2N6770, JANTX2N6770, JANTXV2N6770
Parameter Min. Typ. Max. Units Test Conditions
BVDSS Drain-Source 200 V V GS = 0V, I D=1.0 mA,
Breakdown Voltage
RDS(on) Static Drain-to-Source ------ .085 V GS = 10 V, I D= 19 A 3
On-State Resistance ------ .090 V GS = 10 V, I D= 30 A 3
VGS(th) Gate Threshold Voltage 2.0 --- 4.0 V V DS = VGS
, ID= 250 µA
I
DSS Zero Gate Voltage Drain ------ 25 µA VDS = 160 V, VGS = 0V
Current ------ 250 VDS = 160 V, V GS = 0V, T J= 125°C
I
GSS Gate -to-Source Leakage Forward ------ 100 nA VGS = 20 V
I
GSS Gate -to-Source Leakage Reverse ------ -100 nA V GS = -20 V
QG(on) On-state Gate Charge 55 --- 115 n C V GS = 10 V, I D= 30A
QGS Gate-to-Source Charge 8 ---22nCV
DS = 100V
QGd Gate-to-Drain (“Miller”) Charge 30 --- 60 n C See note 4
t
D(on) Turn-On Delay Time ------35nsV
DD = 100 V, I D= 30A, RG =2.35
t
rRise Time ------ 190 ns See note 4
t
D(off) Turn-Off Delay Time ------ 170 ns
t
rFall Time ------ 130 ns
Source-Drain Diode Ratings and Characteristics
Parameter Min. Typ. Max. Units Test Conditions
VSD Diode Forward Voltage ------ 1.9 V T J= 25°C, IS= 30 A 3, VGS= 0 V
t
trr Reverse Recovery Time ------ 950 ns TJ= 25°C, IF= 30 A,di/dt<100A/µs 3
Thermal Resistance
Parameter Min. Typ. Max. Units Test Conditions
RthJC Junction-to-Case ------ 0.83 Mounting surface flat,
RthCS Case-to-sink --- 0.21 --- °C/W smooth, and greased
RthJA Junction-to-Ambient ------ 48 Typical socket mount
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. @VDD
= 50 V, Starting T J= 25 °C, L = 100 µH + 10%, RG = 25 , Peak IL = 30 A
3. Pulse width < 300 µs; Duty Cycle < 2%
4. See MIL-S-19500/543
205 Crawford Street, Leominster, MA 01 453 USA (508) 534-5776 FAX (508) 537-4246
Parameter JANTXV, JANTX, 2N6766 Units
I
D @ VGS = 10V, TC= 25°C Continuous Drain Current 30 A
I
D @ VGS = 10V, TC= 100°C Continuous Drain Current 19 A
I
DM Pulsed Drain Current1120 A
PD@ TC= 25°C Maximum Power Dissipation 150 W
Linear Derating Factor 1.2 W/°C
VGS Gate-Source Voltage ± 20 V
EAS Single Pulse Avalanche Energy 260 4mJ
I
AR Avalanche Current130 4A
TJOperating Junction -55 to 150 °C
TSTG Storage Temperature Range
Lead Temperature 300(.06 from case for 10 sec) °C
ELECTRICAL CHARACTERISTICS @ TJ = 25°C (Unless Otherwise Specified)
ABSOLUTE MAXIMUM RATINGS (TC= 25°C unless otherwise noted
2N6764, JANTX2N6764, JANTXV2N6764 2N6768, JANTX2N6768, JANTXV2N6768
2N6766, JANTX2N6766, JANTXV2N6766 2N6770, JANTX2N6770, JANTXV2N6770
Parameter Min. Typ. Max. Units Test Conditions
BVDSS Drain-Source 400 V V GS = 0V, I D=1.0 mA,
Breakdown Voltage
RDS(on) Static Drain-to-Source ------ .300 V GS = 10 V, I D= 9.0 A 3
On-State Resistance ------ .400 V GS = 10 V, I D= 14 A 3
VGS(th) Gate Threshold Voltage 2.0 --- 4.0 V V DS = VGS
, ID= 250 µA
I
DSS Zero Gate Voltage Drain ------ 25 µA VDS = 320 V, VGS = 0V
Current ------ 250 VDS = 320 V, V GS = 0V, T J= 125°C
I
GSS Gate -to-Source Leakage Forward ------ 100 nA VGS = 20 V
I
GSS Gate -to-Source Leakage Reverse ------ -100 nA V GS = -20 V
QG(on) On-state Gate Charge 52 --- 110 n C V GS = 10 V, I D= 14A
QGS Gate-to-Source Charge 5.0 ---18nCV
DS = 200 V
QGd Gate-to-Drain (“Miller”) Charge 25 --- 65 n C See note 4
t
D(on) Turn-On Delay Time ------35nsV
DD = 200 V, I D= 14 A, RG = 2.35
t
rRise Time ------ 190 ns See note 4
t
D(off) Turn-Off Delay Time ------ 170 ns
t
rFall Time ------ 130 ns
Source-Drain Diode Ratings and Characteristics
Parameter Min. Typ. Max. Units Test Conditions
VSD Diode Forward Voltage ------ 1.7 V T J= 25°C, IS= 14 A 3, VGS= 0 V
t
trr Reverse Recovery Time ------ 1200 ns TJ= 25°C, IF= 14 A,d i/dt<100A/µs 3
Thermal Resistance
Parameter Min. Typ. Max. Units Test Conditions
RthJC Junction-to-Case ------ 0.83 Mounting surface flat,
RthCS Case-to-sink --- 0.21 --- °C/W smooth, and greased
RthJA Junction-to-Ambient ------ 48 Typical socket mount
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. @VDD
= 50 V, Starting T J= 25 °C, L = 100 µH + 10%, RG = 25 , Peak IL = 14 A
3. Pulse width < 300 µs; Duty Cycle < 2%
4. See MIL-S-19500/543
205 Crawford Street, Leominster, MA 01 453 USA (508) 534-5776 FAX (508) 537-4246
Parameter JANTXV, JANTX, 2N6768 Units
I
D @ VGS = 10V, TC= 25°C Continuous Drain Current 14 A
I
D @ VGS = 10V, TC= 100°C Continuous Drain Current 9.0 A
I
DM Pulsed Drain Current156 A
PD@ TC= 25°C Maximum Power Dissipation 150 W
Linear Derating Factor 1.2 W/°C
VGS Gate-Source Voltage ± 20 V
EAS Single Pulse Avalanche Energy 211.3 4mJ
I
AR Avalanche Current114 4A
TJOperating Junction -55 to 150 °C
TSTG Storage Temperature Range
Lead Temperature 300(.06 from case for 10 sec) °C
ELECTRICAL CHARACTERISTICS @ TJ = 25°C (Unless Otherwise Specified)
ABSOLUTE MAXIMUM RATINGS (TC= 25°C unless otherwise noted
2N6764, JANTX2N6764, JANTXV2N6764 2N6768, JANTX2N6768, JANTXV2N6768
2N6766, JANTX2N6766, JANTXV2N6766 2N6770, JANTX2N6770, JANTXV2N6770
Parameter Min. Typ. Max. Units Test Conditions
BVDSS Drain-Source 500 V V GS = 0V, I D=1.0 mA,
Breakdown Voltage
RDS(on) Static Drain-to-Source ------ .400 V GS = 10 V, I D= 7.75 A 3
On-State Resistance ------ .500 V GS = 10 V, I D= 12 A 3
VGS(th) Gate Threshold Voltage 2.0 --- 4.0 V V DS = VGS
, ID= 250 µA
I
DSS Zero Gate Voltage Drain ------ 25 µA VDS = 400 V, VGS = 0V
Current ------ 250 VDS = 400V, VGS = 0V, TJ= 125°C
I
GSS Gate -to-Source Leakage Forward ------ 100 nA VGS = 20 V
I
GSS Gate -to-Source Leakage Reverse ------ -100 nA V GS = -20 V
QG(on) On-state Gate Charge 55 --- 120 nC VGS = 10 V, I D= 12 A
QGS Gate-to-Source Charge 5.0 ---19nCV
DS = 250 V
QGd Gate-to-Drain (“Miller”) Charge 27 --- 70 n C See note 4
t
D(on) Turn-On Delay Time ------35nsV
DD = 250 V, I D= 12 A, RG = 2.35
t
rRise Time ------ 190 ns See note 4
t
D(off) Turn-Off Delay Time ------ 170 ns
t
rFall Time ------ 130 ns
Source-Drain Diode Ratings and Characteristics
Parameter Min. Typ. Max. Units Test Conditions
VSD Diode Forward Voltage ------ 1.7 V T J= 25°C, IS= 12A 3, VGS= 0 V
t
trr Reverse Recovery Time ------ 1600 ns TJ= 25°C, IF= 12A,d i/dt<100A/µs 3
Thermal Resistance
Parameter Min. Typ. Max. Units Test Conditions
RthJC Junction-to-Case ------ 0.83 Mounting surface flat,
RthCS Case-to-sink --- 0.21 --- °C/W smooth, and greased
RthJA Junction-to-Ambient ------ 48 Typical socket mount
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. @VDD
= 50 V, Starting T J= 25 °C, L = 100 µH + 10%, RG = 25 , Peak IL = 12A
3. Pulse width < 300 µs; Duty Cycle < 2%
4. See MIL-S-19500/543
205 Crawford Street, Leominster, MA 01 453 USA (508) 534-5776 FAX (508) 537-4246
Parameter JANTXV, JANTX, 2N6770 Units
I
D @ VGS = 10V, TC= 25°C Continuous Drain Current 12 A
I
D @ VGS = 10V, TC= 100°C Continuous Drain Current 7.75 A
I
DM Pulsed Drain Current148 A
PD@ TC= 25°C Maximum Power Dissipation 150 W
Linear Derating Factor 1.2 W/°C
VGS Gate-Source Voltage ± 20 V
EAS Single Pulse Avalanche Energy 28.0 4mJ
I
AR Avalanche Current112 4A
TJOperating Junction -55 to 150 °C
TSTG Storage Temperature Range
Lead Temperature 300(.06 from case for 10 sec) °C
ELECTRICAL CHARACTERISTICS @ TJ = 25°C (Unless Otherwise Specified)
ABSOLUTE MAXIMUM RATINGS (TC= 25°C unless otherwise noted
2N6764, JANTX2N6764, JANTXV2N6764 2N6768, JANTX2N6768, JANTXV2N6768
2N6766, JANTX2N6766, JANTXV2N6766 2N6770, JANTX2N6770, JANTXV2N6770
