©2001 Fairchild Semiconductor Corporation Rev. A1, February 2001
MJE800/801/802/803
NPN Epitaxial Silicon Darlington Transistor
Absolute Maximu m Rating s TC=25°C unless otherwise noted
Electrical Characteristics TC=25°C unless otherwise noted
Symbol Parameter Value Units
VCBO Collector- Base Voltage : MJE800/801
: MJE802/803 60
80 V
V
VCEO Collector-Emitter Voltage : MJE800/801
: MJE802/803 60
80 V
V
VEBO Emitter-Base Volt age 5 V
IC Collector Current 4 A
IB Base Current 0.1 A
PC Collector Dissipation (T C=25°C) 40 W
TJ Junction Temperature 150 °C
TSTG Storage Temperature - 55 ~ 150 °C
Symbol Parame ter Test Condition Min. Max. Units
BVCEO
Collector-Emitter Breakdown Voltage
: MJE800/801
: MJE802/803
IC = 50mA, IB = 0
60
80 V
V
ICEO Collector Cut-off Current
: MJE800/801
: MJE802/803
VCE = 60V, IB = 0
VCE = 80V, IB = 0 100
100 µA
µA
ICBO Collector Cut-off Current VCB = Rated BVCEO, IE = 0
VCB = Rated BVCEO, IE = 0
TC = 100°C
100
500 µA
µA
IEBO Emitt e r Cut- o ff Current VBE = 5V, IC = 0 2 mA
hFE DC Current Gain : MJE800/802
: MJE801/803
: ALL DEVICES
VCE = 3V, IC = 1.5A
VCE = 3V, IC = 2A
VCE = 3V, IC = 4A
750
750
100
VCE(sat) Collector-Emitter Saturation Voltage
: MJE800/802
: MJE801/803
: ALL DEVICES
IC = 1.5A, IB = 30mA
IC = 2A, IB = 40m A
IC = 4A, IB = 40m A
2.5
2.8
3
V
V
V
VBE(on) Base-Emitter ON Voltage
: MJE800/802
: MJE801/803
: ALL DEVICES
VCE = 3V, IC = 1.5A
VCE = 3V, IC = 2A
VCE = 3V, IC = 4A
2.5
2.5
3
V
V
V
MJE800/801/802/803
Monolithic Construction With Built-in Base-
Emitter Resistors
• High DC Current Gain : hFE= 750 (Min.) @ IC= 1.5 and 2.0A DC
• Complement to MJE700/701/702/703
R
110
k
Ω≅
R
20.6
k
Ω≅
Equivalent Circuit
B
E
C
R1 R2
1TO-126
1. Emitter 2.Collector 3.Base
©2001 Fairchild Semiconductor Corporation
MJE800/801/802/803
Rev. A1, February 2001
Typical Characteristics
Figure 1. Static Characteristic Figure 2. DC current Gain
Figure 3. Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage Figure 4. Collector Output Capacitance
Figure 5. Safe Operating Area Figure 6. Power Derating
012345
0
1
2
3
4
5
IB= 350µA
IB= 400µA
IB= 450µA
IB= 500µA
I
B
= 300
µ
A
I
B
= 250
µ
A
I
B
= 200
µ
A
IB= 150µA
IB= 100µA
IB= 50µA
IC(A) , CO LLE C TO R CURRENT
VCE(V),COLLECTOR-EMITTER VOLTAGE
0.01 0.1 1 10
10
100
1000
10000
VCE = 3V
hFE, DC CURRENT GAIN
IC[A], COLLECTOR CURRENT
0.01 0.1 1 10
0.1
1
10
100
IC = 500 IB
VCE(sat)
VBE(sat)
VBE(sat), VCE(s at)[V], SATURATION VOLTAGE
IC[A], COLLECTOR CURRENT
0.01 0.1 1 10 100
1
10
100
1000
f=0.1MHZ
IE=0
Cob[pF], CAPACITANCE
VCB[V], COLLECTOR-BASE VOLTAGE
1 10 100 1000
0.1
1
10
100
MJE802/803
D.C.
5ms
1ms
MJE800/801
100µs
IC[A], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
0 25 50 75 100 125 150 175
0
10
20
30
40
50
60
PC[W], POWER DIS SIPATION
TC[oC], CASE TEMPERATURE
Package Demensions
©2001 Fairchild Semiconductor Corporation Rev. A1, February 2001
MJE800/801/802/803
Dimensions in Millimeters
3.25 ±0.20
8.00 ±0.30
ø3.20 ±0.10
0.75 ±0.10
#1
0.75 ±0.10
2.28TYP
[2.28±0.20] 2.28TYP
[2.28±0.20]
1.60 ±0.10
11.00 ±0.20
3.90 ±0.10
14.20MAX
16.10 ±0.20
13.06 ±0.30
1.75 ±0.20
(0.50)
(1.00)
0.50 +0.10
–0.05
TO-126
©2001 Fairchild Semiconductor Corporation Rev. G
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Design This datasheet contains the design specifications for
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