D45H11 - Fairchild Semiconductor

D45H11 — PNP Power Amplifier

D45H11 Rev. 1.2.0 1

December 2013

D45H11

PNP Power Amplifier

Features

• Sourced from process 5Q

• General-Purpose Switching Transistor

• Low Corrector-Emitter Saturation Voltage

• High-Fast Switching Speed

Ordering Information

Absolute Maximum Ratings

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-

ble above the re co mmen ded operating conditi ons an d s tres si ng the parts to these levels is not reco mme nde d. In addi-

tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The

absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.

Part Number Marking Package Packing Method

D45H11 D45H11 TO-220 3L Rail

Symbol Parameter Value Unit

VCEO Collector-Emitter Voltage -80 V

ICCollector Current - Continuous -10 A

TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 °C

1TO-220

1. Base 2. Collector 3. Emitter

Mark: D45H11

Description

This device is designed for power amplifier, regulator,

and switching circuits where speed is important.

D45H11 — PNP Power Amplifier

D45H11 Rev. 1.2.0 2

Thermal Characteristics(1)

Values are at TA = 25°C unless otherwise noted.

Note:

1. Device mounted on FR-4 PCB 36 mm x 18 mm x 1.5 mm: mounting pad for the collector lead minimum 6 cm2.

Electrical Characteristics

Values are at TA = 25°C unless otherwise noted.

Symbol Parameter Max. Unit

PDTotal Device Dissipation 60 W

Derate Above 25°C 480 mW/°C

RθJC Thermal Resistance, Junction to Case 2.1 °C/W

RθJA Thermal Resistance, Junction to Ambient 62.5 °C/W

Symbol Parameter Conditions Min. Max. Unit

Off Characteristics

V(BR)CEO Collector-Emitter Break down Voltage IC = -100 mA, IB = 0 -80 V

ICBO Collector Cut-Off Current VCB = -80 V, IE = 0 -10 μA

IEBO Emitter Cut-Off Current VEB = -5 V, IC = 0 -100 μA

On Characteristics

hFE DC Current Gain VCE = -1 V, IC = -2 A 60

VCE = -1 V, IC = -4 A 40

VCE(sat) Collector-Emitter Saturation Voltage IC = -8 A,IB = -0.4 A -1.0 V

VBE(sat) Base-Emit ter Saturation Voltage IC = -8 A,IB = -0.8 A -1.5 V

VBE(on) Base-Emitter On Voltage VCE = -2 V, IC = -10 mA -0.54 -0.65 V

Small Signal Characteristics

fTCurrent Gain Bandwidth Product IC = -500 mA, VCE = -10 V 40 MHz

D45H11 — PNP Power Amplifier

D45H11 Rev. 1.2.0 3

Typical Performance Characteristics

Figure 1. Typical Pulsed Current Gain vs.

Collector Current Figure 2. Collector-Emitter Saturation Voltage vs.

Collector Current

Figure 3. Base-Emitter Saturation Voltage vs.

Collector Current Figure 4. Base-Emitter O N Voltage vs.

Collector Current

Figure 5. Collector Cut-Off Current vs.

Ambient Temperature Figure 6. Safe Operating Area TO-220

0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10

100

120

140

160

180

200

I - COLLECTOR CURRENT (A)

h - TYPICAL PULSED CURRENT GAIN

125 °C

25 °C

- 40 °C

Vce = 5V

0.1 1 10 15

0.2

0.4

0.6

0.8

I - COLLECTOR CURRENT (A)

V - COLLECTOR-EMITTER VOLTAGE (V)

CESAT

β = 10

125 ºC

- 40 ºC

25 °C

ββ

0.1 1 10

0.4

0.6

0.8

1.2

1.4

1.6

I - COLLECTOR CURRENT (A)

V - BASE-EMITTER VOLTAGE (V)

BESAT

β = 10

125 ºC

- 40 ºC 25 °C

ββ

0.1 1 10

0.4

0.6

0.8

1.2

1.4

1.6

I - COLLECTOR CURRENT (A)

V - BASE-EMITTER VOLTAGE (V)

BESAT

β = 10

125 ºC

- 40 ºC 25 °C

ββ

25 50 75 100 125 150

0.01

0.1

100

T - AMBIENT TEMPERATURE ( C)

I - COLLECTOR CURRENT (nA)

V = 50V

CBO

100101102

10-1

100

101

500us

100us

1ms

Single Pulse

Rthjc=2.1C/W

Ta = 25 oC

-Ic, Collector Current [A]

-Vce, Collector- Emitter Voltage [V]

D45H11 — PNP Power Amplifier

D45H11 Rev. 1.2.0 4

Typical Performance Characteristics (Continued)

Figure 7. Maximum Power Dissipation vs.

Case Temperature Figure 8. Maximum Power Dissipation vs.

Ambient Temperature

Figure 9. Thermal Response

D45H11 — PNP Power Amplifier

D45H11 Rev. 1.2.0 5

Physical Dimensions

Figure 10. TO-220, MOLDED, 3-LEAD, JEDEC VARIATION AB (ACTIVE)

Package drawings are provided as a service to customers considering F airchild components. Drawings may change in any manner

without notic e. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or

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warranty therein, which covers Fairchild produ cts.

Always visit Fairchild Semiconduct or’s online packaging are a for the most recent package drawings :

http://www.fairchildsemi.com/dwg/TO/TO220B03.pdf.

For current tape an d reel specifications, visit Fair child Semiconductor’s online pac kaging area:

http://www.fairchildsemi.com/packing_dwg/PKG-TO220B03.pdf.

TO-220

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Definition of Terms

Datasheet Identification

Product Status

Definition

Advance Information

Formative

In Design

Datasheet contains the design specifications for product development. Specifications may change

in any manner without notice.

Preliminary First Production

Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild

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Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make

changes at any time without notice to improve the design.

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Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor.

The datasheet is for reference information only.

Rev. I66

Mouser Electronics

Authorized Distributor

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D45H11