VS-30BQ015-M3 Vishay Semiconductors Schottky Rectifier, 3.0 A FEATURES Cathode * Ultralow forward voltage drop * Guard ring for enhanced ruggedness and long term reliability * Halogen-free according to IEC 61249-2-21 definition * 125 C TJ operation (VR < 5 V) * Optimized for OR-ing applications * High frequency operation * High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance * Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C * Compliant to RoHS directive 2002/95/EC Anode SMC PRODUCT SUMMARY Package SMC IF(AV) 3.0 A VR 15 V VF at IF 0.3 V IRM 50 mA at 100 C TJ max. 125 C Diode variation Single die EAS 1.5 mJ DESCRIPTION The VS-30BQ015-M3 surface mount Schottky rectifier has been designed for applications requiring low forward drop and very small foot prints on PC boards. The proprietary barrier technology allows for reliable operation up to 125 C junction temperature. Typical applications are in disk drives, switching power supplies, converters, freewheeling diodes, battery charging, and reverse battery protection. MAJOR RATINGS AND CHARACTERISTICS SYMBOL VALUES UNITS Rectangular waveform CHARACTERISTICS 3.0 A 15 V IFSM tp = 5 s sine 650 A VF 1.0 Apk, TJ = 75 C TJ Range IF(AV) VRRM 0.30 V - 55 to 125 C VOLTAGE RATINGS PARAMETER Maximum DC reverse voltage Maximum working peak reverse voltage SYMBOL VS-30BQ015-M3 VR 15 VRWM 25 UNITS V ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES 50 % duty cycle at TL = 83 C, rectangular waveform 3.0 50 % duty cycle at TL = 78 C, rectangular waveform 4.0 UNITS Maximum average forward current IF(AV) Maximum peak one cycle non-repetitive surge current IFSM Non-repetitive avalanche energy EAS TJ = 25 C, IAS = 0.5 A, L = 12 mH 1.5 mJ IAR Current decaying linearly to zero in 1 s Frequency limited by TJ maximum VA = 1.5 x VR typical 0.5 A Repetitive avalanche current Document Number: 93359 Revision: 06-Sep-10 5 s sine or 3 s rect. pulse 10 ms sine or 6 ms rect. pulse Following any rated load condition and with rated VRRM applied For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 650 A 75 www.vishay.com 1 VS-30BQ015-M3 Schottky Rectifier, 3.0 A Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS 3A Maximum forward voltage drop VFM (1) TJ = 25 C 6A 3A TJ = 75 C 6A TJ = 25 C VR = Rated VR Maximum reverse leakage current IRM Maximum junction capacitance CT VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 C Typical series inductance LS Measured lead to lead 5 mm from package body Maximum voltage rate of change dV/dt TJ = 100 C Rated VR VALUES UNITS 0.35 0.43 V 0.30 0.38 4 mA 50 1120 pF 3.0 nH 10 000 V/s VALUES UNITS Note (1) Pulse width = 300 s, duty cycle = 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS Maximum junction temperature range TJ (1) - 55 to 125 Maximum storage temperature range TStg - 55 to 150 Maximum thermal resistance, junction to lead RthJL (2) Maximum thermal resistance, junction to ambient RthJA 12 DC operation C/W 46 Approximate weight Marking device C Case style SMC (similar to DO-214AB) 0.24 g 0.008 oz. 3C Notes (1) (2) dP tot 1 ------------- < -------------- thermal runaway condition for a diode on its own heatsink dT J R thJA Mounted 1" square PCB www.vishay.com 2 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Document Number: 93359 Revision: 06-Sep-10 VS-30BQ015-M3 10 Vishay Semiconductors 100 IR - Reverse Current (mA) IF - Instantaneous Forward Current (A) Schottky Rectifier, 3.0 A 1 TJ = 175 C TJ = 125 C TJ = 25 C TJ = 100 C 10 TJ = 75 C 1 TJ = 50 C 0.1 TJ = 25 C 0.01 0.1 0 0.1 0.2 0.3 0.4 0.5 0 0.6 3 6 9 12 15 VF - Forward Voltage Drop (V) VR - Reverse Voltage (V) Fig. 1 - Typical Forward Voltage Drop Characteristics (Per Leg) Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage (Per Leg) CT - Juction Capacitance (pF) 1000 TJ = 25 C 100 0 4 8 12 16 VR - Reverse Voltage (V) ZthJC - Thermal Impedance (C/W) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage (Per Leg) 100 10 PDM 1 Single pulse (thermal resistance) 0.1 0.00001 0.0001 0.001 t1 D = 0.75 D = 0.50 D = 0.33 D = 0.25 D = 0.20 0.01 t2 Notes: 1. Duty factor D = t1/t2 2. Peak TJ = PDM x ZthJC + TC 0.1 1 10 100 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics (Per Leg) Document Number: 93359 Revision: 06-Sep-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 3 VS-30BQ015-M3 Schottky Rectifier, 3.0 A 1.5 180 D = 0.20 D = 0.25 D = 0.33 D = 0.50 D = 0.75 160 DC 140 Average Power Loss (W) Allowable Lead Temperature (C) Vishay Semiconductors 120 100 Square wave (D = 0.50) 80 % rated VR applied 80 D = 0.20 D = 0.25 D = 0.33 D = 0.50 D = 0.75 1.0 RMS limit DC 0.5 See note (1) 0 60 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 4.5 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 IF(AV) - Average Forward Current (A) Fig. 5 - Maximum Average Forward Current vs. Allowable Lead Temperature Fig. 6 - Maximum Average Forward Dissipation vs. Average Forward Current IFSM - Non-Repetitive Surge Current (A) IF(AV) - Average Forward Current (A) 1000 100 At any rated load condition and with rated VRRM applied following surge 10 10 100 1000 10 000 tp - Square Wave Pulse Duration (s) Fig. 7 - Maximum Peak Surge Forward Current vs. Pulse Duration Note (1) Formula used: T = T - (Pd + Pd C J REV) x RthJC; Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR www.vishay.com 4 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Document Number: 93359 Revision: 06-Sep-10 VS-30BQ015-M3 Schottky Rectifier, 3.0 A Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- 30 B Q 015 -M3 1 2 3 4 5 6 1 - Vishay Semiconductors product suffix 2 - Current rating 3 - B = SMC 4 - Q = Schottky "Q" series 5 - Voltage rating (015 = 15 V) 6 - Environmental digit: -M3 = Halogen-free, RoHS compliant and terminations lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N VS-30BQ015-M3/9AT PREFERRED PACKAGE CODE MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION 9AT 3500 13" diameter plastic tape and reel LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95402 Part marking information www.vishay.com/doc?95403 Packaging information www.vishay.com/doc?95404 Document Number: 93359 Revision: 06-Sep-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 5 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: Vishay: VS-30BQ015-M3/9AT