Technische Information / technical information IGBT-Module IGBT-Modules FZ400R12KE3 B1 Hochstzulassige Werte / maximum rated values Elektrische Eigenschaften / electrical properties Kollektor Emitter Sperrspannung collector emitter voltage Tvj= 25C VCES 1200 V Kollektor Dauergleichstrom DC collector current Tc= 80C Tc= 25C IC, nom IC 400 650 A A Periodischer Kollektor Spitzenstrom repetitive peak collector current tp= 1ms, Tc= 80C ICRM 800 A Gesamt Verlustleistung total power dissipation Tc= 25C; Transistor Ptot 2250 W VGES +/- 20 V IF 400 A IFRM 800 A It 31 k As VISOL 2,5 kV Gate Emitter Spitzenspannung gate emitter peak voltage Dauergleichstrom DC forward current Periodischer Spitzenstrom repetitive peak forward current tp= 1ms Grenzlastintegral It value VR= 0V, tp= 10ms, Tvj= 125C Isolations Prufspannung insulation test voltage RMS, f= 50Hz, t= 1min. Charakteristische Werte / characteristic values Transistor Wechselrichter / transistor inverter Kollektor Emitter Sattigungsspannung collector emitter saturation voltage IC= 400A, VGE= 15V, Tvj= 25C IC= 400A, VGE= 15V, Tvj= 125C min. typ. max. - 1,7 2,15 V - 2,0 - V VGE(th) 5,0 5,8 6,5 V VCEsat Gate Schwellenspannung gate threshold voltage IC= 16mA, VCE= VGE, Tvj= 25C Gateladung gate charge VGE= -15V...+15V QG - 3,7 - C Eingangskapazitat input capacitance f= 1MHz, Tvj= 25C, VCE= 25V, VGE= 0V Cies - 28 - nF Ruckwirkungskapazitat reverse transfer capacitance f= 1MHz, Tvj= 25C, VCE= 25V, VGE= 0V Cres - 1,1 - nF Kollektor Emitter Reststrom collector emitter cut off current VCE= 1200V, VGE= 0V, Tvj= 25C ICES - - 5 mA Gate Emitter Reststrom gate emitter leakage current VCE= 0V, VGE= 20V, Tvj= 25C IGES - - 400 nA prepared by: MOD-D2; Mark Munzer date of publication: 2002-08-07 approved: SM TM; Wilhelm Rusche revision: 3.1 1 (8) DB_FZ400R12KE3_B1_3.1 2002-08-07 Technische Information / technical information IGBT-Module IGBT-Modules FZ400R12KE3 B1 Charakteristische Werte / characteristic values Transistor Wechselrichter / transistor inverter min. typ. max. - 0,25 - s - 0,30 - s - 0,09 - s - 0,10 - s - 0,55 - s - 0,65 - s - 0,13 - s - 0,18 - s Eon - 33 - mJ Eoff - 59 - mJ ISC - 1600 - A LCE - 16 - nH RCC/EE - 0,5 - m - 1,65 2,15 V - 1,65 - V - 280 - A - 360 - A - 40 - C - 75 - C - 18 - mJ - 34 - mJ IC= 400A, VCC= 600V Einschaltverzogerungszeit (induktive Last) turn on delay time (inductive load) VGE= 15V, RG= 1,8, Tvj= 25C td,on VGE= 15V, RG= 1,8, Tvj= 125C IC= 400A, VCC= 600V Anstiegszeit (induktive Last) rise time (inductive load) VGE= 15V, RG= 1,8, Tvj= 25C tr VGE= 15V, RG= 1,8, Tvj= 125C IC= 400A, VCC= 600V Abschaltverzogerungszeit (induktive Last) turn off delay time (inductive load) VGE= 15V, RG= 1,8, Tvj= 25C td,off VGE= 15V, RG= 1,8, Tvj= 125C IC= 400A, VCC= 600V Fallzeit (induktive Last) fall time (inductive load) VGE= 15V, RG= 1,8, Tvj= 25C tf VGE= 15V, RG= 1,8, Tvj= 125C Einschaltverlustenergie pro Puls turn on energy loss per pulse Ausschaltverlustenergie pro Puls turn off energy loss per pulse Kurzschlussverhalten SC data IC= 400A, VCC= 600V, L= 85nH VGE= 15V, RG= 1,8, Tvj= 125C IC= 400A, VCC= 600V, L= 85nH VGE= 15V, RG= 1,8, Tvj= 125C tP 10s, VGE 15V, TVj 125C VCC= 900V, VCEmax= VCES - LCE *di/dt Modulinduktivitat stray inductance module Leitungswiderstand, Anschluss-Chip lead resistance, terminal-chip Tc= 25C Charakteristische Werte / characteristic values Diode Wechselrichter / diode inverter Durchlassspannung forward voltage Ruckstromspitze peak reverse recovery current IF= 400A, VGE= 0V, Tvj= 25C IF= 400A, VGE= 0V, Tvj= 125C VF IF= 400A, -diF/dt= 4000A/s VR= 600V, VGE= -15V, Tvj= 25C IRM VR=600V, VGE= -15V, Tvj= 125C Sperrverzogerungsladung recoverred charge IF= 400A, -diF/dt= 4000A/s VR= 600V, VGE= -15V, Tvj= 25C Qr VR= 600V, VGE= -15V, Tvj= 125C Ausschaltenergie pro Puls reverse recovery energy IF= 400A, -diF/dt= 4000A/s VR= 600V, VGE= -15V, Tvj= 25C VR= 600V, VGE= -15V, Tvj= 125C 2 (8) Erec DB_FZ400R12KE3_B1_3.1 2002-08-07 Technische Information / technical information IGBT-Module IGBT-Modules FZ400R12KE3 B1 Thermische Eigenschaften / thermal properties Innerer Warmewiderstand; DC thermal resistance, junction to case; DC Transistor Wechelr. / transistor inverter Ubergangs Warmewiderstand thermal resistance, case to heatsink pro Modul / per module Paste= 1W/m*K / grease= 1W/m*K - - 0,055 K/W - - 0,125 K/W RthCK - 0,010 - K/W Tvj max - - 150 C Betriebstemperatur operation temperature Tv op -40 - 125 C Lagertemperatur storage temperature Tstg -40 - 125 C Diode Wechselrichter / diode inverter Hochstzulassige Sperrschichttemp. maximum junction temperature RthJC Mechanische Eigenschaften / mechanical properties Gehause, siehe Anlage case, see appendix Innere Isolation internal insulation Al2O3 Kriechstrecke creepage distance 20 mm Luftstrecke clearance 11 mm CTI comperative tracking index 425 Anzugsdrehmoment, mech. Befestigung mounting torque Anzugsdrehmoment, elektr. Anschlusse terminal connection torque Schraube M6 / screw M6 Anschlusse / terminals M6 Anschlusse / terminals M4 Gewicht weight M M G 3 - 6 2,5 - 5 1,1 - 2 340 Nm Nm g Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert. Sie gilt in Verbindung mit den zugehorigen technischen Erlauterungen. This technical information specifies semiconductor devices but promises no characteristics. It is valid with the belonging technical notes. 3 (8) DB_FZ400R12KE3_B1_3.1 2002-08-07 Technische Information / technical information IGBT-Module IGBT-Modules FZ400R12KE3 B1 Ausgangskennlinie (typisch) output characteristic (typical) IC= f(VCE) VGE= 15V 800 700 Tvj = 25C Tvj = 125C 600 IC [A] 500 400 300 200 100 0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 VCE [V] Ausgangskennlinienfeld (typisch) output characteristic (typical) IC= f(VCE) Tvj= 125C 800 Vge=19V 700 Vge=17V Vge=15V 600 Vge=13V Vge=11V IC [A] 500 Vge=9V 400 300 200 100 0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0 VCE [V] 4 (8) DB_FZ400R12KE3_B1_3.1 2002-08-07 Technische Information / technical information IGBT-Module IGBT-Modules FZ400R12KE3 B1 Ubertragungscharakteristik (typisch) transfer characteristic (typical) IC= f(VGE) VCE= 20V 800 700 Tvj=25C Tvj=125C 600 IC [A] 500 400 300 200 100 0 5 6 7 8 9 10 11 12 13 VGE [V] IF= f(VF) Durchlasskennlinie der Inversdiode (typisch) forward caracteristic of inverse diode (typical) 800 700 Tvj = 25C Tvj = 125C 600 IF [A] 500 400 300 200 100 0 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 2,4 VF [V] 5 (8) DB_FZ400R12KE3_B1_3.1 2002-08-07 Technische Information / technical information IGBT-Module IGBT-Modules FZ400R12KE3 B1 Schaltverluste (typisch) Switching losses (typical) Eon = f (IC) , Eoff = f (IC) , Erec = f (IC) VGE=15V, RG=1,8, VCE=600V, Tvj=125C 120 Eon Eoff 100 Erec E [mJ] 80 60 40 20 0 0 100 200 300 400 500 600 700 800 IC [A] Schaltverluste (typisch) Switching losses (typical) Eon = f (RG) , Eoff = f (RG) , Erec = f (RG) VGE=15V, IC=400A, VCE=600V, Tvj=125C 240 Eon Eoff 200 Erec E [mJ] 160 120 80 40 0 0 3 6 9 12 15 18 21 RG [] 6 (8) DB_FZ400R12KE3_B1_3.1 2002-08-07 Technische Information / technical information IGBT-Module IGBT-Modules FZ400R12KE3 B1 Transienter Warmewiderstand Transient thermal impedance ZthJC = f (t) ZthJC [K/W] 1 0,1 Zth : IGBT 0,01 Zth : Diode 0,001 0,001 0,01 0,1 1 10 t [s] i ri [K/kW] : IGBT i [s] : IGBT ri [K/kW] : Diode i [s] : Diode 2 27,71 2,601E-02 62,98 2,601E-02 1 23,12 6,499E-02 52,56 6,499E-02 Sicherer Arbeitsbereich (RBSOA) Reverse bias safe operation area (RBSOA) 3 3,13 2,364E-03 7,10 2,364E-03 4 1,04 1,187E-05 2,36 1,187E-05 VGE=15V, Tvj=125C, RG=1,8 900 800 700 IC [A] 600 500 IC,Chip IC,Modul 400 300 200 100 0 0 200 400 600 800 1000 1200 1400 VCE [V] 7 (8) DB_FZ400R12KE3_B1_3.1 2002-08-07 Technische Information / technical information IGBT-Module IGBT-Modules FZ400R12KE3 B1 Gehausemae / Schaltbild Package outline / Circuit diagram 8 (8) DB_FZ400R12KE3_B1_3.1 2002-08-07 Terms & Conditions of Usage Attention The present product data is exclusively subscribed to technically experienced staff. 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