FZ400R12KE3B1 - Eupec Power Semiconductors

nom 400 A

IC650 A

min. typ. max.

- 1,7 2,15 V

- 2,0 - V

6,55,8

3,7

I²t

VGE(th)

QG - -

Periodischer Kollektor Spitzenstrom

DC forward current

31 k A²s

tp= 1ms IFRM 800 A

Grenzlastintegral

I²t value

gate emitter peak voltage

800

Dauergleichstrom IF400

Tc= 25°C; Transistor

repetitive peak collector current tp= 1ms, Tc= 80°C

V +/- 20

Höchstzulässige Werte / maximum rated values

Kollektor Emitter Sperrspannung

Tc= 80°CKollektor Dauergleichstrom

collector emitter voltage

Elektrische Eigenschaften / electrical properties

Tvj= 25°C

Tc= 25°CDC collector current

Periodischer Spitzenstrom

VCEsat

VISOL

5,0

Charakteristische Werte / characteristic values

approved: SM TM; Wilhelm Rusche

VR= 0V, tp= 10ms, Tvj= 125°C

Isolations Prüfspannung

insulation test voltage RMS, f= 50Hz, t= 1min.

IC= 16mA, VCE= VGE, Tvj= 25°C

gate threshold voltage

IC= 400A, VGE= 15V, Tvj= 125°C

Technische Information / technical information

FZ400R12KE3 B1

IGBT-Module

IGBT-Modules

VCES

ICRM

1200 V

Ptot 2250

repetitive peak forward current

kV2,5

VGES

Gesamt Verlustleistung

total power dissipation

Gate Emitter Spitzenspannung

Transistor Wechselrichter / transistor inverter

date of publication: 2002-08-07

Kollektor Emitter Sättigungsspannung IC= 400A, VGE= 15V, Tvj= 25°C

collector emitter saturation voltage

prepared by: MOD-D2; Mark Münzer

Gate Schwellenspannung

Gateladung VGE= -15V...+15V

Rückwirkungskapazität

revision: 3.1

µC

gate charge

Eingangskapazität f= 1MHz, Tvj= 25°C, VCE= 25V, VGE= 0V Cies - 28 - nF

input capacitance

f= 1MHz, Tvj= 25°C, VCE= 25V, VGE= 0V Cres

reverse transfer capacitance - 1,1 - nF

-5mA

collector emitter cut off current

Kollektor Emitter Reststrom VCE= 1200V, VGE= 0V, Tvj= 25°C ICES -

- 400 nA -

gate emitter leakage current

Gate Emitter Reststrom VCE= 0V, VGE= 20V, Tvj= 25°C IGES

1 (8) DB_FZ400R12KE3_B1_3.1

2002-08-07

Technische Information / technical information

FZ400R12KE3 B1

IGBT-Module

IGBT-Modules

min. typ. max.

- 0,25 - µs

- 0,30 - µs

- 0,09 - µs

- 0,10 - µs

- 0,55 - µs

- 0,65 - µs

- 0,13 - µs

- 0,18 - µs

- 1,65 2,15 V

- 1,65 - V

- 280 - A

- 360 - A

- 40 - µC

- 75 - µC

- 18 - mJ

- 34 - mJ

Fallzeit (induktive Last)

fall time (inductive load)

ISC - 1600 - A

SC data VCC= 900V, VCEmax= VCES - LσCE ·di/dt

Einschaltverlustenergie pro Puls

turn on energy loss per pulse

- nH

stray inductance module

Modulinduktivität LσCE -

0,5

turn off energy loss per pulse Eoff

IC= 400A, VCC= 600V, Lσ= 85nH

VGE= ±15V, RG= 1,8Ω, Tvj= 125°C -

Ausschaltenergie pro Puls

reverse recovery energy Erec

VR= 600V, VGE= -15V, Tvj= 25°C

VR= 600V, VGE= -15V, Tvj= 125°C

IF= 400A, -diF/dt= 4000A/µs

Sperrverzögerungsladung

recoverred charge

IF= 400A, -diF/dt= 4000A/µs

Ausschaltverlustenergie pro Puls

Kurzschlussverhalten tP ≤ 10µs, VGE ≤ 15V, TVj ≤ 125°C

Leitungswiderstand, Anschluss-Chip

lead resistance, terminal-chip RCC´/EE´

Tc= 25°C

- mJ

VGE= ±15V, RG= 1,8Ω, Tvj= 125°C

IC= 400A, VCC= 600V

VGE= ±15V, RG= 1,8Ω, Tvj= 25°C

VGE= ±15V, RG= 1,8Ω, Tvj= 125°C

mΩ

Charakteristische Werte / characteristic values

IC= 400A, VCC= 600V

VGE= ±15V, RG= 1,8Ω, Tvj= 25°C

td,off

VGE= ±15V, RG= 1,8Ω, Tvj= 25°C

- -

VGE= ±15V, RG= 1,8Ω, Tvj= 25°C

VGE= ±15V, RG= 1,8Ω, Tvj= 125°C

- 33

Transistor Wechselrichter / transistor inverter

td,on

Abschaltverzögerungszeit (induktive Last)

turn off delay time (inductive load)

VR=600V, VGE= -15V, Tvj= 125°C

forward voltage

Rückstromspitze

peak reverse recovery current IRM

Eon

IC= 400A, VCC= 600V, Lσ= 85nH

VGE= ±15V, RG= 1,8Ω, Tvj= 125°C

IC= 400A, VCC= 600V

VR= 600V, VGE= -15V, Tvj= 25°C

IF= 400A, -diF/dt= 4000A/µs

Durchlassspannung

Charakteristische Werte / characteristic values

IF= 400A, VGE= 0V, Tvj= 25°C

IF= 400A, VGE= 0V, Tvj= 125°C

Diode Wechselrichter / diode inverter

Anstiegszeit (induktive Last)

rise time (inductive load)

IC= 400A, VCC= 600V

Einschaltverzögerungszeit (induktive Last)

turn on delay time (inductive load)

VGE= ±15V, RG= 1,8Ω, Tvj= 125°C

VR= 600V, VGE= -15V, Tvj= 25°C

VR= 600V, VGE= -15V, Tvj= 125°C

2 (8) DB_FZ400R12KE3_B1_3.1

2002-08-07

Technische Information / technical information

FZ400R12KE3 B1

IGBT-Module

IGBT-Modules

- - 0,055 K/W

- - 0,125 K/W

2,5 - 5

1,1 - 2

11 mm

Luftstrecke

Schraube M6 / screw M6 M

Anzugsdrehmoment, mech. Befestigung

comperative tracking index

clearance

CTI

20 mm

creepage distance

Kriechstrecke

Thermische Eigenschaften / thermal properties

RthJC

Diode Wechselrichter / diode inverter

Transistor Wechelr. / transistor inverter

Innerer Wärmewiderstand; DC

thermal resistance, junction to case; DC

This technical information specifies semiconductor devices but promises no characteristics. It is valid with

the belonging technical notes.

°C

--40 125

- 125

Tstg -40

K/W

150 °C

maximum junction temperature

0,010

RthCK --

Tvj max -

Mechanische Eigenschaften / mechanical properties

Innere Isolation

Tv op

Betriebstemperatur

Lagertemperatur

Übergangs Wärmewiderstand pro Modul / per module

λPaste= 1W/m*K / λgrease= 1W/m*K

Höchstzulässige Sperrschichttemp.

thermal resistance, case to heatsink

Gehäuse, siehe Anlage

case, see appendix

°C

operation temperature

storage temperature

Al2O3

internal insulation

425

Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften

zugesichert. Sie gilt in Verbindung mit den zugehörigen technischen Erläuterungen.

6Nm

mounting torque

weight

Anschlüsse / terminals M4

Anschlüsse / terminals M6

terminal connection torque

Gewicht

Anzugsdrehmoment, elektr. Anschlüsse Nm

340 g

3 (8) DB_FZ400R12KE3_B1_3.1

2002-08-07

Technische Information / technical information

FZ400R12KE3 B1

IGBT-Module

IGBT-Modules

Ausgangskennlinie (typisch) IC= f(VCE)

output characteristic (typical) Tv

= 125°C

output characteristic (typical) VGE= 15V

usgangs

enn

IC= f(VCE)

100

200

300

400

500

600

700

800

0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5

VCE [V]

IC [A]

Tvj = 25°C

Tvj = 125°C

100

200

300

400

500

600

700

800

0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0

VCE [V]

IC [A]

Vge=19V

Vge=17V

Vge=15V

Vge=13V

Vge=11V

Vge=9V

4 (8) DB_FZ400R12KE3_B1_3.1

2002-08-07

Technische Information / technical information

FZ400R12KE3 B1

IGBT-Module

IGBT-Modules

Übertragungscharakteristik (typisch)

transfer characteristic (typical)

IC= f(VGE)

VCE= 20V

Durchlasskennlinie der Inversdiode (typisch) IF= f(VF)

forward caracteristic of inverse diode (typical)

100

200

300

400

500

600

700

800

5678910111213

VGE [V]

IC [A]

Tvj=25°C

Tvj=125°C

100

200

300

400

500

600

700

800

0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 2,4

VF [V]

IF [A]

Tvj = 25°C

Tvj = 125°C

5 (8) DB_FZ400R12KE3_B1_3.1

2002-08-07

Technische Information / technical information

FZ400R12KE3 B1

IGBT-Module

IGBT-Modules

ver

Switching losses (typical)

Eon = f (RG) , Eoff = f (RG) , Erec = f (RG)

VGE=±15V, IC=400A, VCE=600V, Tvj=125°C

ver

Switching losses (typical)

Eon = f (IC) , Eoff = f (IC) , Erec = f (IC)

VGE=±15V, RG=1,8Ω, VCE=600V, Tvj=125°C

100

120

0 100 200 300 400 500 600 700 800

IC [A]

E [mJ]

Eon

Eoff

Erec

120

160

200

240

036912151821

RG [Ω]

E [mJ]

Eon

Eoff

Erec

6 (8) DB_FZ400R12KE3_B1_3.1

2002-08-07

Technische Information / technical information

FZ400R12KE3 B1

IGBT-Module

IGBT-Modules

23,12

Transienter Wärmewiderstand

ri [K/kW] : IGBT

ZthJC = f (t)

Transient thermal impedance

τi [s] : IGBT

ri [K/kW] : Diode

6,499E-02

1,04

2,364E-03

2,3652,56 62,98

Reverse bias safe operation area (RBSOA) VGE=±15V, Tvj=125°C, RG=1,8Ω

τi [s] : Diode

Sicherer Arbeitsbereich (RBSOA)

2,601E-02 1,187E-056,499E-02

7,10

2,364E-03

1,187E-05

27,71

2,601E-02

3,13

0,001

0,01

0,1

0,001 0,01 0,1 1 10

t [s]

ZthJC [K/W]

Zth : IGBT

Zth : Diode

100

200

300

400

500

600

700

800

900

0 200 400 600 800 1000 1200 1400

VCE [V]

IC [A]

IC,Chip

IC,Modul

7 (8) DB_FZ400R12KE3_B1_3.1

2002-08-07

Technische Information / technical information

FZ400R12KE3 B1

IGBT-Module

IGBT-Modules

Gehäusemaße / Schaltbild

Package outline / Circuit diagram

8 (8) DB_FZ400R12KE3_B1_3.1

2002-08-07

Terms & Conditions of Usage

Attention

The present product data is exclusively subscribed to technically experienced

staff. This Data Sheet is describing the specification of the products for which a

warranty is granted exclusively pursuant the terms and conditions of the supply

agreement. There will be no guarantee of any kind for the product and its

specifications. Changes to the Data Sheet are reserved.

You and your technical departments will have to evaluate the suitability of the

product for the intended application and the completeness of the product data

with respect to such application. Should you require product information in

excess of the data given in the Data Sheet, please contact your local Sales Office

via “www.eupec.com / sales & contact”.

Warning

Due to technical requirements the products may contain dangerous substances.

For information on the types in question please contact your local Sales Office via

“www.eupec.com / sales & contact”.