2003 Mar 20 4
NXP Semiconductors Pr oduct dat a shee t
General purpose diodes BAS19; BAS20; BAS21
ELECTRICAL CHARACTERISTIC S
Tj = 25 °C unless otherwise specified.
THERMAL CHARACTE RISTICS
Note
1. Device mounted on an FR4 printed-circuit board.
SYMBOL PARAMETER CONDITIONS MAX. UNIT
VFforward voltage see Fig.3
IF = 100 mA 1 V
IF = 200 mA 1.25 V
IRreverse current see Fig.5
BAS19 VR = 100 V 100 nA
VR = 100 V; Tj = 150 °C100 µA
BAS20 VR = 150 V 100 nA
VR = 150 V; Tj = 150 °C100 µA
BAS21 VR = 200 V 100 nA
VR = 200 V; Tj = 150 °C100 µA
Cddiode capacit an ce f = 1 MHz; VR = 0; see Fig.6 5pF
trr reverse recove ry time when switched from IF = 30 mA to
IR = 30 mA; RL = 100 Ω; measured at
IR = 3 mA; see Fig.8
50 ns
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-tp thermal resistance from junction to tie-point 330 K/W
Rth j-a thermal resistance from junction to ambient note 1 500 K/W