SA676DK/01,112 - NXP SEMICONDUCTORS

1. General description

The SA676 is a low-voltage monolithic FM IF system incorporating a mixer/oscillator, two

limiting intermediate frequency amplifiers, quadrature detector, logarithmic Received

Signal Strength Indicator (RSSI), voltage regulator and audio and RSSI op amps. The

SA676 is available in a 20-pin SSOP (Shrink Small Outline Package).

The SA676 was designed for cordless telephone applications in which efficient and

economic integrated solutions are required and yet high performance is desirable.

Although the product is not targeted to meet the stringent specifications of high

performance cellular equipment, it will exceed the needs for analog cordless phones. The

minimal amount of external compone nts and absence of any external adjustments makes

for a very economical solution.

2. Features and benefits

Low power consum ption: 3.5 mA typical at 3 V

Mixer input to > 100 MHz

Mixer conversion power gain of 17 dB at 45 MHz

XTAL oscillator ef fective to 100 MHz (LC oscillator or external oscillator can be used at

higher frequencies)

102 dB of IF amplifier/limiter gain

2 MHz IF amp/limiter small signal bandwidth

Temperature compensated logarithmic Received Signal Strength Indicator (RSSI) with

a 70 dB dynamic range

Low external com p on e nt count; suitable for crystal/ceramic/LC filters

Audio output internal op amp

RSSI output internal op amp

Internal op amps with rail-to-rail outputs

ESD protection exceeds 2000 V HBM per JESD22-A114 and 1000 V CDM per

JESD22-C101

Latch-up testing is done to JEDEC St andard JESD78 Class II, Level B

3. Applications

Cordless telephones

SA676

Low-voltage mixer FM IF system

Rev. 3 — 19 July 2012 Product data sheet

Product data sheet Rev. 3 — 19 July 2012 2 of 22

NXP Semiconductors SA676

Low-voltage mixer FM IF system

4. Ordering information

5. Block diagram

Table 1. Ordering information

Tamb =





C to +85



Type number Topside

mark Package

Name Description Version

SA676DK/01 SA676DK SSOP20 plastic shrink small outline package; 20 leads;

body width 4.4 mm SOT266-1

Fig 1. Block diagram

002aag116

mixer

IF amp

limiter

OSC RSSI

quad

audio

VREG

20 19 18 17 16 15 14 13 12 11

12345678910

RF_IN

RF_IN_DECOUPL

OSC_OUT

OSC_IN

RSSI_OUT

AUDIO_FEEDBACK

AUDIO_OUT

RSSI_FEEDBACK

QUADRATURE_IN

MIXER_OUT

IF_AMP_DECOUPL

IF_AMP_IN

IF_AMP_DECOUPL

IF_AMP_OUT

GND

LIMITER_IN

LIMITER_DECOUPL

LIMITER_OUT

Product data sheet Rev. 3 — 19 July 2012 3 of 22

NXP Semiconductors SA676

Low-voltage mixer FM IF system

6. Pinning information

6.1 Pinning

6.2 Pin description

Fig 2. Pi n configuration for SSOP20

SA676DK/01

RF_IN MIXER_OUT

RF_IN_DECOUPL IF_AMP_DECOUPL

OSC_OUT IF_AMP_IN

OSC_IN IF_AMP_DECOUPL

RSSI_OUT IF_AMP_OUT

VCC GND

AUDIO_FEEDBACK LIMITER_IN

AUDIO_OUT LIMITER_DECOUPL

RSSI_FEEDBACK LIMITER_DECOUPL

QUADRATURE_IN LIMITER_OUT

002aag115

Tabl e 2. Pin description

Symbol Pin Description

RF_IN 1 RF input

RF_IN_DECOUPL 2 RF input decoupling pin

OSC_OUT 3 oscillator output

OSC_IN 4 oscillator input

RSSI_OUT 5 RSSI output

VCC 6 positive supply voltage

AUDIO_FEEDBACK 7 audio amplifier negative feedback terminal

AUDIO_OUT 8 audio amplifier output

RSSI_FEEDBACK 9 RSSI amplifier negative feedback terminal

QUADRATURE_IN 10 quadrature detector input terminal

LIMITER_OUT 11 limiter amplifier output

LIMITER_DECOUPL 12 limiter amplifier decoupling pin

LIMITER_DECOUPL 13 limiter amplifier decoupling pin

LIMITER_IN 14 limiter amplifier input

GND 15 ground; negative supply

IF_AMP_OU T 16 IF ampli fi e r out pu t

IF_AMP_DECOUPL 17 IF amplifier decoupl ing pin

IF_AMP_IN 18 IF amplifier input

IF_AMP_DECOUPL 19 IF amplifier decoupl ing pin

MIXER_OUT 20 mixer output

Product data sheet Rev. 3 — 19 July 2012 4 of 22

NXP Semiconductors SA676

Low-voltage mixer FM IF system

7. Functional description

The SA676 is an IF signal processing system suitable for second IF systems with input

frequency as high as 100 MHz. The bandwidth of the IF amplifie r and limiter is at least

2 MHz with 90 dB of gain. The gain/bandwidth distribution is optimized for 455 kHz,

1.5 k source applications. The overall system is well-suited to battery operation as well

as high performa nce and high quality prod u cts of all types.

The input stage is a Gilbert cell mixer with oscillator. Typical mixer characteristics include

a noise figure of 7.0 dB, conversion gain of 17 dB, and input third-order intercept of

10 dBm. The oscillator will operate in excess of 100 MHz in L/C tank configurations.

Hartley or Colpitts circuits can be used up to 100 MHz for crystal configurations.

The output impedance of the mixer is a 1.5 k resistor permitting direct connection to a

455 kHz ceramic filter. The input resistance of the limiting IF amplifiers is also 1.5 k. With

most 455 kHz ceramic filters and many crystal filters, no impedance matching networ k is

necessary. The IF amplifier has 44 dB of gain and 5.5 MHz bandwidth. The IF limiter has

58 dB of gain and 4.5 MHz bandwidth.

To achieve optimum linearity of the log signal strength indicator, there must be a 12 dBV

insertion loss between the first and second IF stages. If the IF filter or intersta ge network

does not cause 12 dBV insertion loss, a fixed or variable resistor or an L pad for

simultaneous loss and impedance matching can be added between the first IF output

(IF_AMP_OUT) and the interstage network. The overall gain will then be 90 dB with

2 MHz bandwidth.

The signal from the second limiting amplifier goes to a Gilbert cell quadrature detector.

One port of the Gilbert cell is internally driven by the IF. The other output of the IF is

AC-coupled to a tuned quadrature network. This signal, which now has a 90 phase

relationship to the internal signal, drives the other port of the multiplier cell.

The demodulated ou tput of the q uadrature drives an internal o p amp. This op amp can be

configured as a unity gain buffer, or for simultaneous gain, filtering, and second-order

temperature compensation if needed. It can drive an AC load as low as 10 k with a

rail-to-rail output.

A log signal strength indicator completes the circuitry. The output range is greater than

70 dB and is temperature compensated. This signal drives an internal op amp. The

op amp is capable of rail-to-rail output. It can be used for gain, filtering, or second-order

temperature compensation of th e RSSI, if neede d.

Remark: dBV = 20log VO/VI.

Product data sheet Rev. 3 — 19 July 2012 5 of 22

NXP Semiconductors SA676

Low-voltage mixer FM IF system

8. Limiting values

9. Thermal characteristics

10. Static characteristics

Table 3. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

VCC supply voltage - 7 V

Tstg storage temperature 65 +150 C

Tamb ambient temperature operating 40 +85 C

Table 4. Th ermal characteristics

Symbol Parameter Conditions Max Unit

Zth(j-a) transient thermal imped ance

from junction to ambient SA676DK/01 (SSOP20) 117 K/W

Table 5. Static characteristics

VCC =3V; T

amb =25



C; unless specified otherwise.

Symbol Parameter Conditions Min Typ Max Unit

VCC supply voltage 2.7 - 7.0 V

ICC supply current - 3.5 5.0 mA

Product data sheet Rev. 3 — 19 July 2012 6 of 22

NXP Semiconductors SA676

Low-voltage mixer FM IF system

11. Dynamic characteristics

[1] The generator source impedance is 50 , but the SA676 input impedance at IF_AMP_IN (pin 18) is 1500 . As a result, IF level refers

to the actual signal that enters the SA676 input (IF_AMP_IN, pin 18), which is about 21 dB less than the ‘available power’ at the

generator.

Table 6. Dy namic characteristics

Tamb =25



C; VCC = 3 V; un less specified otherwise. RF frequency = 45 MHz + 14.5 dBV RF input ste p-up.

IF frequency = 455 kHz; R17 = 2.4 k



and R18 = 3.3 k



. RF level =



45 dBm; FM modulation = 1 kHz with



5 kHz peak

deviation. Audio output with de-emphasis filter and C-message weighted filter. Test circuit Figure 9. The parameters listed

below are tested using automatic test equipment to assure consistent electrical characteristics. The limits do not represent

the ultimate performance limits of the device. Use of an optimized RF layout will improve many of the listed parameters.

Symbol Parameter Conditions Min Typ Max Unit

Mixer/oscillator section (external LO = 220 mV RMS value)

fiinput frequency - 100 - MHz

fosc oscillator frequency - 100 - MHz

NF noise figure at 45 MHz - 7.0 - dB

IP3Iinput third-order intercept point 50  source;

f1=45.0MHz;f2=45.06MHz;

input RF level = 52 dBm

-10 - dBm

Gp(conv) conversion power gain matched 14.5 dBV step-up 10 17 - dB

50  source - 2.5 - dB

Ri(RF) RF input resistance single-ended input - 8 - k

Ci(RF) RF input capacitance - 3.0 4.0 pF

Ro(mix) mixer output resistance MIXER_OUT pin 1.25 1.5 - k

IF section

Gamp(IF) IF amplifier gain 50  source - 44 - dB

Glim limiter gain 50  source - 58 - dB

AM AM rejection 30 % AM 1 kHz - 50 - dB

Vo(aud) audio output voltage gain of two 60 120 - mV

SINAD signal-to-noise-and-distortion ratio IF level 110 dBm - 17 - dB

THD total ha rmo nic distortion - 55 - dB

S/N signal-to-noise ratio no modulation for noise - 60 - dB

Vo(RSSI) RSSI output voltage IF; R9 = 2 k[1]

IF level = 110 dBm - 0.5 0.9 V

IF level = 50 dBm - 1.7 2.2 V

RSSI(range) RSSI range - 70 - dB

Zi(IF) IF input impedance IF_AMP_IN pin 1.3 1.5 - k

Zo(IF) IF output impedance IF_AMP_OUT pin - 0.3 - k

Zi(lim) limiter input impedance LIMITER_IN pin 1.3 1.5 - k

Zo(lim) limiter output impedance LIMITER_OUT pin - 0.3 - k

Vo(RMS) RMS output voltage LIMITER_OUT pin - 130 - mV

RF/IF section (internal LO)

SINAD signal-to-noise-and-distortion ratio system; RF level = 114 dBm - 12 - dB

Product data sheet Rev. 3 — 19 July 2012 7 of 22

NXP Semiconductors SA676

Low-voltage mixer FM IF system

12. Performance curves

Fig 3. Supply current versus ambient temperature

Fig 4. Conversion power gain versus ambien t temperature

amb

(°C)

−55 1255

002aag198

(mA)

65 10585

4525−15

−35

= 7.0 V

5.0 V

3.0 V

2.7 V

Tamb (°C)

−40 9060−20

002aag199

17.0

16.5

17.5

18.0

Gp(conv)

(dB)

16.0

02040 80

VCC = 2.7 V

3.0 V

7.0 V

Product data sheet Rev. 3 — 19 July 2012 8 of 22

NXP Semiconductors SA676

Low-voltage mixer FM IF system

RF = 45 MHz; IF = 455 kHz.

(1) Fund product.

(2) Third order product.

(3) 50  input.

Fig 5. Mixer third order intercept and co mpression

VCC = 3 V; RF = 45 MHz; deviation = 5kHz; V

o(aud)RMS = 117.6 mV.

Fig 6. Relative level of audio, AM rejection, THD+N and noise (Tamb =+25C)

RF(3) input level (dBm)

−66 3414−26 −6−46

002aaf414

−40

−20

−60

IF output power

(dBm)

−80

(1) (2)

002aaf416

−15

−65

−55

−45

−35

−25

−5

RF level (dBm)

−125 −25−45−85 −65−105

audio

noise THD+N

AM rejection

relative level

(dB)

Product data sheet Rev. 3 — 19 July 2012 9 of 22

NXP Semiconductors SA676

Low-voltage mixer FM IF system

VCC =3V

Fig 7. RSSI output voltage versus RF level

Fig 8. Audio output voltage versus ambient temperature

RF level (dBm)

−125 −45−85 −65−105

002aag200

0.9

1.5

2.1

Vo(RSSI)

(V)

0.3

0.6

1.2

1.8 Tamb = +85 °C

+27 °C

−40 °C

amb

(°C)

−55 1255

002aag201

65 10585

4525−15

−35

= 7.0 V

5.0 V

3.0 V

2.7 V

100

200

300

o(aud)

(mV)

Product data sheet Rev. 3 — 19 July 2012 10 of 22

NXP Semiconductors SA676

Low-voltage mixer FM IF system

13. Application information

The layout is very critical in the performance of the receiver. We highly recommend our demo

board layout.

All of the inductors, the quad tank, and their shield must be grounded. A 10 F to 15 F or higher

value tantalum cap acitor on the supply line is essential. A low frequency ESR screening test on this

capacitor will ensure consistent good sensitivity in production. A 0.1 F bypass capacitor on the

supply pin, and grounded near the 44.545 MHz oscillator improves sensitivity by 2 dB to 3 dB.

Fig 9. SA676 45 MH z application circuit (SA676DK demo board)

002aag117

mixer

IF amp

limiter

OSC RSSI

quad

audio

VREG

20 19 18 17 16 15 14 13 12 11

1234567 8910

C23 C21

FL1

C18 C17

FL2

R17

2.4 kΩ

R18

3.3 kΩ

C26

C15

C10

RSSI_OUT

R11

10 kΩ

C12

R10

10 kΩ

AUDIO_OUT

C27

2.2 μF

R19

11 kΩ IFT1

C19

390 pF C14

45 MHz

input

Product data sheet Rev. 3 — 19 July 2012 11 of 22

NXP Semiconductors SA676

Low-voltage mixer FM IF system

[1] This value can be reduced when a battery is the power source.

[2] This is a 30 kHz bandwidth 455 kHz ceramic filter. All the characterization and testing are done with this

wideband filter. A more narrowband 15 kHz bandwidth 455 kHz ceramic filter that may be used as an

alternative selection is Murata CFUKG455KE4A-R0.

[3] R5 can be used to bias the oscillator transistor at a higher current for operation above 45 MHz.

Recommended value is 22 k, but should not be below 10 k .

Table 7. SA676DK demo board compone nt list

Component Description

C1 51 pF NPO ceramic

C2 220 pF NPO ceramic

C5, C9, C14, C17,

C18, C21, C23, C26 100 nF 10 % monolithic ceramic

C6 5 pF to 30 pF trim cap

C7 1 nF ceramic

C8, C15 10.0 pF NPO ceramic

C10 10 F tantalum (minimum)[1]

C12 2.2 F10 % tantalum

C19 390 pF 10 % monolithic ceramic

C27 2.2 F tantalum

FL1, FL2[2] ceramic filter Murata CFUKF455KB4X-R0

IFT1 330 H Toko 303LN-1130

L1 330 nH Coilcraft UNI-10/142--04J08S

L2 0.8 H nominal Toko 292CNS-T1038Z

X1 44.545 MHz crystal ICM4712701

R5[3] not used in application board

R10 8.2 k5%

1⁄4 W carbon composition

R11 10 k5%

1⁄4 W carbon composition

R17 2.4 k5%

1⁄4 W carbon composition

R18 3.3 k5%

1⁄4 W carbon composition

R19 11 k5%

1⁄4 W carbon composition

Product data sheet Rev. 3 — 19 July 2012 12 of 22

NXP Semiconductors SA676

Low-voltage mixer FM IF system

Fig 10. SA6x6DK/SA58640DK top view with components

001aal912

TOKO

SA6x6DK SA58640DK

C10

FT1

C27

C12

4.7 nF

RSSI

VCC

AUDIO

GND

AUDIO_DC

IF = 455 kHzRF IN

45 MHz

820 Ω

C1 C2 C21

C23

44.545 MHz

R11

C15

C14

C17 C18

R19

R17

FIL1

455 kHz

FIL2

R18 C26

C19

R10

Product data sheet Rev. 3 — 19 July 2012 13 of 22

NXP Semiconductors SA676

Low-voltage mixer FM IF system

Fig 11. SA6x6DK/SA58640DK bottom view (viewed from top)

001aal892

Product data sheet Rev. 3 — 19 July 2012 14 of 22

NXP Semiconductors SA676

Low-voltage mixer FM IF system

14. Test information

(1) Set RF generator at 45.000 MHz; use a 1 kHz modulation frequency and a 6 kHz deviation if using

16 kHz filters, or 8 kHz if using 30 kHz filters.

(2) The smallest RSSI voltage (i.e., when no RF input is present and the input is terminated) is a

measure of the quality of the layout and design. If the lowest RSSI voltage is 500 mV or higher, it

means the receiver is in regenerative mode. In that case, the receiver sensitivity will be worse than

expected.

(3) The C-message and de-emphasis filter combination has a peak gain of 10 dB for accurate

measurements. Without the gain, the measurements may be affected by the noise of the scope

and HP339A analyzer . The de-emphasis filter has a fixed 6 dB/octave slope between 300 Hz and

3kHz.

(4) The measured typical sensitivity for 12 dB SINAD should be 0.45 V or 114 dBm at the RF input.

Fig 12. SA676 application circuit test setup

SCOPE

SA676 DEMOBOARD(2)

RSSI AUDIO

002aag118

RF GENERATOR(1)

45 MHz

VCC (+3 V)

DC VOLTMETER

HP339A DISTORTION

ANALYZER(4)

C-MESSAGE(3)

DE-EMPHASIS

FILTER

Product data sheet Rev. 3 — 19 July 2012 15 of 22

NXP Semiconductors SA676

Low-voltage mixer FM IF system

15. Package outline

Fig 13. Package outline SOT266-1 (SSOP20)

UNIT A1A2A3bpcD

(1) E(1) (1)

ELL

pQZywv θ

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC JEITA

mm 0.15

01.4

1.2 0.32

0.20 0.20

0.13 6.6

6.4 4.5

4.3 0.65 1 0.2

6.6

6.2 0.65

0.45 0.48

0.18 10

0.13 0.1

DIMENSIONS (mm are the original dimensions)

Note

1. Plastic or metal protrusions of 0.20 mm maximum per side are not included.

0.75

0.45

SOT266-1 MO-152 99-12-27

03-02-19

detail X

vMA

(A )

0.25

110

20 11

pin 1 index

0 2.5 5 mm

scale

SSOP20: plastic shrink small outline package; 20 leads; body width 4.4 mm SOT266-1

max.

1.5

Product data sheet Rev. 3 — 19 July 2012 16 of 22

NXP Semiconductors SA676

Low-voltage mixer FM IF system

16. Soldering of SMD packages

This text provides a very brief insight into a complex technology. A more in-depth account

of soldering ICs can be found in Application Note AN10365 “Surface mount reflow

soldering description”.

16.1 Introduction to soldering

Soldering is one of the most common methods through which packages are attached to

Printed Circuit Boards (PCBs), to form electrical circuits. The soldered joint provides both

the mechanical and the electrical connection. There is no single soldering method that is

ideal for all IC packages. Wave soldering is often preferred when through-hole and

Surface Mount Devices (SMDs) are mixed on one printed wiring board; however, it is not

suitable for fine pitch SMDs. Reflow soldering is ideal for the small pitches and high

densities that come with increased miniaturization.

16.2 Wave and reflow soldering

W ave soldering is a joinin g technology in which the joint s are made by solder coming from

a standing wave of liquid solder. The wave soldering process is suitable for th e following:

•Through-hole components

•Leaded or leadless SMDs, which are glued to the surface of the printed circuit board

Not all SMDs can be wave soldered. Packages with solder balls, and some leadless

packages which have solder lands underneath the body, cannot be wave soldered. Also,

leaded SMDs with leads having a pitch smaller than ~0.6 mm cannot be wave soldered,

due to an increased probability of bridging.

The reflow soldering process involves applying solder paste to a board, followed by

component placement and exposure to a temperature profile. Leaded packages,

packages with solder balls, and leadless packages are all reflow solderable.

Key characteristics in both wave and reflow soldering are:

•Board specifications, including the board finish, solder masks and vias

•Package footprints, including solder thieves and orientation

•The moisture sensitivity level of the packages

•Package placement

•Inspection and repair

•Lead-free soldering versus SnPb soldering

16.3 Wave soldering

Key characteristics in wave soldering are:

•Process issues, such as application of adhesive and flux, clinching of leads, board

transport, the solder wave pa rameters, and the time during which components are

exposed to the wave

•Solder bath specifications, including temperature and impurities

Product data sheet Rev. 3 — 19 July 2012 17 of 22

NXP Semiconductors SA676

Low-voltage mixer FM IF system

16.4 Reflow soldering

Key characteristics in reflow soldering are:

•Lead-free ve rsus SnPb soldering; note th at a lead-free reflow process usua lly leads to

higher minimum peak temperatures (see Figure 14) than a SnPb process, thus

reducing the process window

•Solder paste printing issues including smearing, release, and adjusting the process

window for a mix of large and small components on one board

•Reflow temperature profile; this profile includes preheat, reflow (in which the board is

heated to the peak temperature) and cooling down. It is imperative that the peak

temperature is high enoug h for the solder to make reliable solder joint s (a solder paste

characteristic). In addition, the peak temperature must be low enough that the

packages and/or boards are not damaged. The peak temperature of the package

depends on package thickness and volume and is classified in acco rdance with

Table 8 and 9

Moisture sensitivity precautions, as indicated on the packing, must be respected at all

times.

Studies have shown that small packages reach higher temperat ures during reflow

soldering, see Figure 14.

Table 8. SnPb eutectic process (from J-STD-020C)

Package thickness (mm) Package reflow temperature (C)

Volume (mm3)

< 350  350

< 2.5 235 220

 2.5 220 220

Table 9. Lead-free process (from J-STD-020C)

Package thickness (mm) Package reflow temperature (C)

Volume (mm3)

< 350 350 to 2000 > 2000

< 1.6 260 260 260

1.6 to 2.5 260 250 245

> 2.5 250 245 245

Product data sheet Rev. 3 — 19 July 2012 18 of 22

NXP Semiconductors SA676

Low-voltage mixer FM IF system

For further information on temperature profile s, refer to Application Note AN10365

“Surface mount reflow soldering description”.

17. Abbreviations

MSL: Moisture Sensitivity Level

Fig 14. Temperature profiles for large and small component s

001aac844

temperature

time

minimum peak temperature

= minimum soldering temperature

maximum peak temperature

= MSL limit, damage level

peak

temperature

Table 10. Abbreviations

Acronym Description

AM Amplitude Modulation

CDM Charged-Device Model

ESD ElectroStatic Discharge

ESR Equivalent Series Resistance

FM Frequency Modulation

HBM Human Body Model

IF Intermediate Frequency

LC inductor-capacitor filter

LO Local Oscillator

RF Radio Frequency

RMS Root Mean Squared

RSSI Received Signal Strength Indicator

Product data sheet Rev. 3 — 19 July 2012 19 of 22

NXP Semiconductors SA676

Low-voltage mixer FM IF system

18. Revision history

Table 11. Revision history

Document ID Release date Data sheet status Change notice Supersedes

SA676 v.3 20120719 Product data sheet - SA676 v.2

Modifications: •Section 2 “Features and benefits”:

–13th bullet item re-written

–added (new) 14th bullet item

SA676 v.2 20110412 Product data sheet - SA676 v.1

SA676 v.1 19931215 Product spe cification ECN

853-1726 11659 -

Product data sheet Rev. 3 — 19 July 2012 20 of 22

NXP Semiconductors SA676

Low-voltage mixer FM IF system

19. Legal information

19.1 Data sheet status

[1] Please consult the most recently issued document before initiating or completing a design.

[2] The term ‘short data sheet’ is explained in section “Definitions”.

[3] The product status of de vice(s) descr ibed in th is docume nt may have cha nged since this docume nt was publis hed and ma y dif fer in case of multiple devices. The latest product status

information is available on the Internet at URL http://www.nxp.com.

19.2 Definitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modifications or additions. NXP Semiconductors does not give any

representations or warranties as to the accuracy or completeness of

information included herein and shall have no liab ility for the consequences of

use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet

with the same product type number(s) and tit le. A short data sh eet is intended

for quick reference only and shou ld not be rel ied u pon to cont ain det ailed and

full information. For detailed and full information see the relevant full data

sheet, which is available on request via the local NXP Semiconductors sales

office. In case of any inconsistency or conflict with the short data sheet, the

full data sheet shall pre vail.

Product specificatio n — The information and data provided in a Product

data sheet shall define the specification of the product as agr eed between

NXP Semiconductors and its customer, unless NXP Semiconductors and

customer have explicitly agreed otherwise in writing. In no event however,

shall an agreement be valid in which the NXP Semiconductors product is

deemed to off er functions and qualities beyond those described in the

Product data sheet.

19.3 Disclaimers

Limited warr a nty and liability — Information in this document is believed to

be accurate and reliable. However, NXP Semiconductors does not give any

representations or warranties, expressed or implied, as to the accuracy or

completeness of such information and shall have no liability for the

consequences of use of such information. NXP Se miconductors takes no

responsibility for the content in this document if provided by an inf ormation

source outside of NXP Semiconductors.

In no event shall NXP Semiconductors be liable for any indirect , incidental,

punitive, special or consequ ential damages (including - wit hout limitatio n - lost

profits, lost savings, business interruption, costs related to the removal or

replacement of any products or rework charges) whether or not such

damages are based on tort (including negligence), warranty, breach of

contract or any other legal theory.

Notwithstanding any damages that customer might incur for any reason

whatsoever, NXP Semiconductors’ ag gregate and cumulati ve liability toward s

customer for the products described herein shall be limited in accordance

with the Terms and conditions of commercial sale of NXP Semicondu ctors.

Right to make changes — NXP Semiconductors reserves the right to make

changes to information published in this document, including without

limitation specifications and product descripti ons, at any time and without

notice. This document supersedes and replaces all informa tion supplied prior

to the publication hereof .

Suitability for use — NXP Semiconductors products are not designed,

authorized or warranted to be suitable for use in life support, life-critical or

safety-critical systems or equipment, nor in applications where failure or

malfunction of an NXP Semiconductors product can reasonably be expected

to result in perso nal injury, death or severe property or environmental

damage. NXP Semiconductors and its suppliers accept no liability for

inclusion and/or use of NXP Semiconducto rs products in such equipment or

applications and ther efore such inclu sion and/or use is at the cu stomer’s own

risk.

Applications — Applications that are described herein for any of these

products are for illustrative purposes only. NXP Semiconductors makes no

representation or warranty tha t such application s will be suitable for the

specified use without further testing or modification.

Customers are responsible for the design and ope ration of their applications

and products using NXP Semiconductors product s, and NXP Semiconductors

accepts no liability for any assistance with applications or customer product

design. It is customer’s sole responsibility to determine whether the NXP

Semiconductors product is suit able and fit for the custome r’s applications and

products planned, as well as fo r the planned application and use of

customer’s third party customer(s). Customers should provide appropriate

design and operating safeguards to minimize the risks associate d with t heir

applications and products.

NXP Semiconductors does not accept any liabil ity related to any default,

damage, costs or problem which is based on any weakness or default in the

customer’s applications or products, or the application or use by customer’s

third party customer(s). Customer is responsible for doing all necessary

testing for th e customer’s applications and products using NXP

Semiconductors products in order to avoid a default of the applications and

the products or of the application or use by cu stomer’s third party

customer(s). NXP does not accept any liability in this respect.

Limiting values — Stress above one or more limiting values (as defined in

the Absolute Maximum Ratings System of IEC 60134) will cause permanent

damage to the device. Limiting values are stress rating s only and (proper)

operation of the device at these or any other conditions above those given in

the Recommended operating conditions section (if present) or the

Characteristics sections of this document is not warranted. Constant or

repeated exposure to limiting values will permanent ly and irreversibly affect

the quality and reliability of the device.

Terms and conditions of commercial sale — NXP Semiconductors

products are sold subject to the general terms and conditions of commercial

sale, as published at http://www.nxp.com/profile/terms, unless otherwise

agreed in a valid written individua l agreement. In case an individual

agreement is concluded only the ter ms and conditions of the respective

agreement shall apply. NXP Semiconductors hereby expressly objects to

applying the customer’s general terms and conditions with regard to the

purchase of NXP Semiconductors products by customer.

No offer to sell or license — Nothing i n this document may be interpreted or

construed as an of fer t o sell product s that is open for accept ance or t he grant,

conveyance or implication of any license under any copyrights, patents or

other industrial or intellectual property rights.

Document status[1][2] Product status[3] Definition

Objective [short] data sheet Development This document contains data from the objective specification for product develop ment.

Preliminary [short] dat a sheet Qualification This document contains data from the preliminary specificat ion.

Product [short] dat a sheet Production This document contains the product specification.

Product data sheet Rev. 3 — 19 July 2012 21 of 22

NXP Semiconductors SA676

Low-voltage mixer FM IF system

Export control — This document as well as the item(s) described herein

may be subject to export control regulations. Export might require a prior

authorization from competent authorities.

Non-automotive qualified products — Unless this data sheet expressly

states that this specific NXP Semiconductors prod uct is automotive qualified,

the product is not suitable for automotive use. It i s neit her qua lified nor tested

in accordance with automotive testing or application requirements. NXP

Semiconductors accepts no liability for inclusion and/or use of

non-automotive qualified products in automotive equipment or applications.

In the event that customer uses the product for design-in and use in

automotive applications to automot ive specifications and standard s, customer

(a) shall use the product without NXP Semiconductors’ warranty of the

product for such automotive applications, use and specifications, and (b)

whenever customer uses the product for automotive applications beyond

NXP Semiconductors’ specifications such use shall be solely at customer’s

own risk, and (c) customer fully indemnifies NXP Semiconductors for any

liability, damages or failed product claims resulting from customer design and

use of the product for automotive applications beyond NXP Semiconductors’

standard warranty and NXP Semiconductors’ product specifications.

Translations — A non-English (translated) version of a document is for

reference only. The English version shall prevail in case of any discrepancy

between the translated and English versions.

19.4 Trademarks

Notice: All referenced b rands, produc t names, service names and trademarks

are the property of their respect i ve ow ners.

20. Contact information

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

NXP Semiconductors SA676

Low-voltage mixer FM IF system

For more information, please visit: http://www.nxp.co m

For sales office addresses, please send an email to: salesaddresses@nxp.com

Date of release: 19 July 2012

Document identifier: SA676

Please be aware that important notices concerning this document and the product(s)

described herein, have been included in section ‘Legal information’.

21. Contents

1 General description. . . . . . . . . . . . . . . . . . . . . . 1

2 Features and benefits . . . . . . . . . . . . . . . . . . . . 1

3 Applications. . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

4 Ordering information. . . . . . . . . . . . . . . . . . . . . 2

5 Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . 2

6 Pinning information. . . . . . . . . . . . . . . . . . . . . . 3

6.1 Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

6.2 Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 3

7 Functional description . . . . . . . . . . . . . . . . . . . 4

8 Limiting values . . . . . . . . . . . . . . . . . . . . . . . . . . 5

9 Thermal characteristics . . . . . . . . . . . . . . . . . . 5

10 Static characteristics. . . . . . . . . . . . . . . . . . . . . 5

11 Dynamic characteristics . . . . . . . . . . . . . . . . . . 6

12 Performance curves . . . . . . . . . . . . . . . . . . . . . 7

13 Application information. . . . . . . . . . . . . . . . . . 10

14 Test information. . . . . . . . . . . . . . . . . . . . . . . . 14

15 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 15

16 Soldering of SMD packages . . . . . . . . . . . . . . 16

16.1 Introduction to soldering . . . . . . . . . . . . . . . . . 16

16.2 Wave and reflow soldering . . . . . . . . . . . . . . . 16

16.3 Wave soldering. . . . . . . . . . . . . . . . . . . . . . . . 16

16.4 Reflow soldering. . . . . . . . . . . . . . . . . . . . . . . 17

17 Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 18

18 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 19

19 Legal information. . . . . . . . . . . . . . . . . . . . . . . 20

19.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 20

19.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 20

19.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 20

19.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 21

20 Contact information. . . . . . . . . . . . . . . . . . . . . 21

21 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22