TPSMB6.8 thru TPSMB43A
Vishay Semiconductors
for merly General Semiconductor
Document Number 88406 www.vishay.com
06-May-02 1
Surface Mount Automotive
T ransient Voltage Suppressors
Breakdown Voltage 6.8 to 43V
Peak Pulse Power 600W
Maximum Ratings and Thermal Characteristics(TA= 25°C unless otherwise noted)
Parameter Symbol Value Unit
Peak pulse power dissipation with a 10/1000µs
waveform(1)(2) (Fig. 1) PPPM Minimum 600 W
Peak pulse current with a 10/1000µs waveform(1) (Fig. 3) IPPM See Next Table A
Peak forward surge current 8.3ms single half sine-wave(2)(3) IFSM 75 A
Instantaneous forward voltage at 50A(3) VF3.5 V
Operating junction and storage temperature range TJ, TSTG – 65 to +185 °C
Notes: (1) Non-repetitive current pulse, per Fig.3 and derated above TA = 25°C per Fig.2
(2) Mounted on 0.2 x 0.2” (5.0 x 5.0mm) land areas per figure
(3) Mounted on 8.3ms single half sine-wave duty cycle = 4 pulses per minute maximum
Available in
uni-directional
only
DO-214AA (SMB)
Dimensions in inches
and (millimeters)
0.180 (4.57)
0.160 (4.06) 0.012 (0.305)
0.006 (0.152)
0.008
(0.203)
Max.
0.220 (5.59)
0.205 (5.21)
0.060 (1.52)
0.030 (0.76)
0.155 (3.94)
0.130 (3.30)
0.086 (2.20)
0.077 (1.95)
0.096 (2.44)
0.084 (2.13)
Cathode Band
Patented*
Mechanical Data
Case: JEDEC DO-214AA molded plastic body over
passivated junction
Terminals: Solder plated, solderable per
MIL-STD-750, Method 2026
Polarity: The color band denotes the cathode,
which is positive with respect to the anode under
normal TVS operation
Mounting Position: Any
Weight: 0.003 oz., 0.093 g
Packaging codes/options:
5/3.2K per 13" Reel (12mm tape), 38.4K/box
2/750 EA per 7" Reel (12mm tape), 15K/box
Features
• Plastic package has Underwr iters Laboratory
Flammability Classification 94V-0
• Easy pick and place
• Low profile package
• Built-in strain relief ideal for automated placement
• Exclusive patented PAR®oxide passivated
chip construction
• 600W peak pulse power capability with a 10/1000ms
wavefor m, repetition rate (duty cycle): 0.01%
• Excellent clamping capability
• Low incremental surge resistance
• Ver y fast response time
• For devices with V(BR) ≥10V IDis typically less
than 2.0mA at TA = 150°C
• Designed for under the hood surface mount
applications
• High temperature soldering:
250°C/10 seconds at terminals
0.106 MAX
(2.69 MAX)
0.050 MIN
(1.27 MIN) 0.220 REF
0.083 MIN
(2.10 MIN)
Mounting Pad Layout
*Patent #’s
4,980,315
5,166,769
5,278,094
TPSMB6.8 thru TPSMB43A
Vishay Semiconductors
for merly General Semiconductor
www.vishay.com Document Number 88406
206-May-02
Electrical Characteristics(TA= 25°C unless otherwise noted)
TJ= 150°C Maximum
Breakdown Voltage Maximum Maximum Peak Pulse Maximum
V(BR)(1) at ITReverse Reverse Surge Clamping
Device (V) Test Stand-off Leakage Leakage Current Voltage
Marking Current Voltage at VWM at VWM IPPM(2) at IPPM
Device Code Min. Max. IT (mA) VWM (V) ID (µA) ID (µA) (A) Vc (V)
TPSMB6.8 KDP 6.12 7.48 10 5.50 500 1000 55.6 10.8
TPSMB6.8A KEP 6.45 7.14 10 5.80 500 1000 57.1 10.5
TPSMB7.5 KFP 6.75 8.25 10 6.05 250 500 51.3 11.7
TPSMB7.5A KGP 7.13 7.88 10 6.40 250 500 53.1 11.3
TPSMB8.2 KHP 7.38 9.02 10 6.63 100 200 48.0 12.5
TPSMB8.2A KKP 7.79 8.61 10 7.02 100 200 49.6 12.1
TPSMB9.1 KLP 8.19 10.0 1.0 7.37 25 50 43.5 13.8
TPSMB9.1A KMP 8.65 9.55 1.0 7.78 25 50 44.8 13.4
TPSMB10 KNP 9.00 11.0 1.0 8.10 5.0 20 40.0 15.0
TPSMB10A KPP 9.50 10.5 1.0 8.55 5.0 20 41.4 14.5
TPSMB11 KQP 9.90 12.1 1.0 8.92 2.0 5.0 37.0 16.2
TPSMB11A KRP 10.5 11.6 1.0 9.40 2.0 5.0 38.5 15.6
TPSMB12 KSP 10.8 13.2 1.0 9.72 2.0 5.0 34.7 17.3
TPSMB12A KTP 11.4 12.6 1.0 10.2 2.0 5.0 35.9 16.7
TPSMB13 KUP 11.7 14.3 1.0 10.5 2.0 5.0 31.6 19.0
TPSMB13A KVP 12.4 13.7 1.0 11.1 2.0 5.0 33.0 18.2
TPSMB15 KWP 13.5 16.5 1.0 12.1 1.0 5.0 27.3 22.0
TPSMB15A KXP 14.3 15.8 1.0 12.8 1.0 5.0 28.3 21.2
TPSMB16 KYP 14.4 17.6 1.0 12.9 1.0 5.0 25.5 23.5
TPSMB16A KZP 15.2 16.8 1.0 13.6 1.0 5.0 26.7 22.5
TPSMB18 LDP 16.2 19.8 1.0 14.5 1.0 5.0 22.6 26.5
TPSMB18A LEP 17.1 18.9 1.0 15.3 1.0 5.0 23.8 25.2
TPSMB20 LFP 18.0 22.0 1.0 16.2 1.0 5.0 20.6 29.1
TPSMB20A LGP 19.0 21.0 1.0 17.1 1.0 5.0 21.7 27.7
TPSMB22 LHP 19.8 24.2 1.0 17.8 1.0 5.0 18.8 31.9
TPSMB22A LKP 20.9 23.1 1.0 18.8 1.0 5.0 19.6 30.6
TPSMB24 LLP 21.6 26.4 1.0 19.4 1.0 5.0 17.3 34.7
TPSMB24A LMP 22.8 25.2 1.0 20.5 1.0 5.0 18.1 33.2
TPSMB27 LNP 24.3 29.7 1.0 21.8 1.0 5.0 15.3 39.1
TPSMB27A LPP 25.7 28.4 1.0 23.1 1.0 5.0 16.0 37.5
TPSMB30 LQP 27.0 33.0 1.0 24.3 1.0 5.0 13.8 43.5
TPSMB30A LRP 28.5 31.5 1.0 25.6 1.0 5.0 14.5 41.4
TPSMB33 LSP 29.7 36.3 1.0 26.8 1.0 5.0 12.6 47.7
TPSMB33A LTP 31.4 34.7 1.0 28.2 1.0 5.0 13.1 45.7
TPSMB36 LUP 32.4 39.6 1.0 29.1 1.0 5.0 11.5 52.0
TPSMB36A LVP 34.2 37.8 1.0 30.8 1.0 5.0 12.0 49.9
TPSMB39 LWP 35.1 42.9 1.0 31.6 1.0 5.0 10.6 56.4
TPSMB39A LXP 37.1 41.0 1.0 33.3 1.0 5.0 11.1 53.9
TPSMB43 LYP 38.7 47.3 1.0 34.8 1.0 5.0 9.7 61.9
TPSMB43A LZP 40.9 45.2 1.0 36.8 1.0 5.0 10.1 59.3
Notes: (1) V(BR) measured after ITapplied for 300µs, IT=square wave pulse or equivalent
(2) Surge current waveform per Fig. 3 and derate per Fig.2
(3) All terms and symbols are consistent with ANSI/IEEE C62.35
TPSMB6.8 thru TPSMB43A
Vishay Semiconductors
for merly General Semiconductor
Document Number 88406 www.vishay.com
06-May-02 3
Ratings and
Characteristic Curves(TA= 25°C unless otherwise noted)
Fig.1 – Peak Pulse Power Rating Curve
0.1
1.0
10
100
0.1µs 1.0µs10µs 100µs 1.0ms 10ms
PPPM, Peak Power (KW)
CJ, Junction Capacitance, pF
V(BR), Breakdown Voltage (V)
10
100
1,000
10,000
1 10 100 200
td, Pulse Width, sec.
Fig. 4 – Typical Junction Capacitance
Fig. 2 – Pulse Derating Curve
0
25
50
75
100
050 100 150 200
Peak Pulse Power (PPP) or Current (IPP)
Derating in Percentage (%)
TA, Ambient Temperature (°C)
TJ = 25°C
f = 1 MHz
Vsig = 50mVp-p
VR measured
at zero bias
VR measured
at stand-off
voltage, VWM
TA = 25°C
Non-repetitive pulse
waveform shown in Fig. 3
0.2 x 0.2" (5.0 x 5.0mm)
copper pad areas
Fig. 5 – Maximum Non-Repetitive
Peak Forward Surge Current
100
Number of Cycles at 60 Hz
IFSM, Peak Forward Surge Current (A)
10 1 10 100
TJ = TJ max
8.3ms single half sine-wave
(JEDEC method)
0
50
100
150
IPPM — Peak Pulse Current, % IRSM
Fig. 3 – Pulse W avef orm
TJ = 25°C
Pulse Width (td)
is defined as the point
where the peak current
decays to 50% of IPPM
tr = 10µsec.
Peak Value
IPPM
Half Value — IPP
IPPM 2
td
10/1000µsec. Waveform
as defined by R.E.A.
01.0 2.0 3.0 4.0
t — Time (ms)
