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H11G1M, H11G2M — 6-Pin DIP High Voltage Photodarlington Optocouplers
©2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
H11G1M, H11G2M Rev. 1.0.5
December 2014
H11G1M, H11G2M
6-Pin DIP High Voltage Photodarlington Optocouplers
Features
■
High BV
CEO
:
– 100 V Minimum for H11G1M
– 80 V Minimum for H11G2M
■
High Sensitivity to Low Input Current
(Minimum 500% CTR at I
F
= 1 mA)
■
Low Leakage Current at Elevated Temperature
(Maximum 100 µA at 80°C)
■
Safety and Regulatory Approvals:
– UL1577, 4,170 VAC
RMS
for 1 Minute
– DIN-EN/IEC60747-5-5, 850 V Peak Working
Insulation Voltage
Applications
■
CMOS Logic Interface
■
Telephone Ring Detector
■
Low Input TTL Interface
■
Power Supply Isolation
■
Replace Pulse Transformer
General Description
The H11G1M and H11G2M are photodarlington-type
optically coupled optocouplers. These devices have a
gallium arsenide infrared emitting diode coupled with a
silicon darlington connected phototransistor which has
an integral base-emitter resistor to optimize elevated
temperature characteristics.
Schematic Package Outlines
EMITTER
COLLECTOR
1
2
3
ANODE
CATHODE
4
5
6BASE
N/C
Figure 1. Schematic
Figure 2. Package Outlines
©2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
H11G1M, H11G2M Rev. 1.0.5 2
H11G1M, H11G2M — 6-Pin DIP High Voltage Photodarlington Optocouplers
Safety and Insulation Ratings
As per DIN EN/IEC 60747-5-5, this optocoupler is suitable for “safe electrical insulation” only within the safety limit
data. Compliance with the safety ratings shall be ensured by means of protective circuits.
Note:
1. Safety limit values – maximum values allowed in the event of a failure.
Parameter Characteristics
Installation Classifications per DIN VDE
0110/1.89 Table 1, For Rated Mains Voltage
< 150 V
RMS
I–IV
< 300 V
RMS
I–IV
Climatic Classification 55/100/21
Pollution Degree (DIN VDE 0110/1.89) 2
Comparative Tracking Index 175
Symbol Parameter Value Unit
V
PR
Input-to-Output Test Voltage, Method A, V
IORM
x 1.6 = V
PR
,
Type and Sample Test with t
m
= 10 s, Partial Discharge < 5 pC 1360 V
peak
Input-to-Output Test Voltage, Method B, V
IORM
x 1.875 = V
PR
,
100% Production Test with t
m
= 1 s, Partial Discharge < 5 pC 1594 V
peak
V
IORM
Maximum Working Insulation Voltage 850 V
peak
V
IOTM
Highest Allowable Over-Voltage 6000 V
peak
External Creepage
≥
7mm
External Clearance
≥
7mm
External Clearance (for Option TV, 0.4" Lead Spacing)
≥
10 mm
DTI Distance Through Insulation (Insulation Thickness)
≥
0.5 mm
T
S
Case Temperature
(1)
175 °C
I
S,INPUT
Input Current
(1)
350 mA
P
S,OUTPUT
Output Power
(1)
800 mW
R
IO
Insulation Resistance at T
S
, V
IO
= 500 V
(1)
> 10
9
Ω
©2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
H11G1M, H11G2M Rev. 1.0.5 3
H11G1M, H11G2M — 6-Pin DIP High Voltage Photodarlington Optocouplers
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
Symbol Parameter Value Unit
TOTAL DEVICE
T
STG
Storage Temperature -40 to +125 °C
T
OPR
Operating Temperature -40 to +100 °C
T
J
Junction Temperature -40 to +125 ºC
T
SOL
Lead Solder Temperature 260 for 10 seconds °C
P
D
Total Device Power Dissipation @ T
A
= 25°C 290 mW
Derate Above 25°C 3.5 mW/°C
EMITTER
I
F
Forward Input Current 60 mA
V
R
Reverse Input Voltage 6.0 V
I
F
(pk) Forward Current – Peak (1 µs pulse, 300 pps) 3.0 A
P
D
LED Power Dissipation @ T
A
= 25°C 90 mW
Derate Above 25°C 1.8 mW/°C
DETECTOR
V
CEO
Collector-Emitter Voltage
H11G1M 100 V
H11G2M 80 V
P
D
Photodetector Power Dissipation @ T
A
= 25°C 200 mW
Derate Above 25°C 2.67 mW/°C
©2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
H11G1M, H11G2M Rev. 1.0.5 4
H11G1M, H11G2M — 6-Pin DIP High Voltage Photodarlington Optocouplers
Electrical Characteristics
T
A
= 25°C unless otherwise specified.
Individual Component Characteristics
Transfer Characteristics
Isolation Characteristics
Symbol Characteristic Test Conditions Device Min. Typ. Max. Unit
EMITTER
V
F
Forward Voltage I
F
= 10 mA All 1.3 1.5 V
Δ
V
F
Δ
T
A
Forward Voltage
Temperature Coefficient All -1.8 mV/°C
BV
R
Reverse Breakdown
Voltage I
R
= 10 µA All 3.0 25 V
C
J
Junction Capacitance V
F
= 0 V, f = 1 MHz All 50 pF
V
F
= 1 V, f = 1 MHz 65 pF
I
R
Reverse Leakage
Current V
R
= 3.0V All 0.001 10 µA
DETECTOR
BV
CEO
Breakdown Voltage
Collector to Emitter I
C
= 1.0 mA, I
F
= 0 H11G1M 100 V
H11G2M 80 V
BV
CBO
Collector to Base I
C
= 100 µA H11G1M 100 V
H11G2M 80 V
BV
EBO
Emitter to Base All 7 10 V
I
CEO
Leakage Current
Collector to Emitter
V
CE
= 80 V, I
F
= 0 H11G1M 100 nA
V
CE
= 60 V, I
F
= 0 H11G2M 100 nA
V
CE
= 80 V, I
F
= 0, T
A
= 80°C H11G1M 100 µA
V
CE
= 60 V, I
F
= 0, T
A
= 80°C H11G2M 100 µA
Symbol Characteristics Test Conditions Device Min. Typ. Max. Unit
EMITTER
CTR Current Transfer Ratio,
Collector to Emitter
I
F
= 10 mA, V
CE
= 1 V All 100
(1000) mA (%)
I
F
= 1 mA, V
CE
= 5 V All 5 (500) mA (%)
V
CE(SAT)
Saturation Voltage I
F
= 16 mA, I
C
= 50 mA All 0.85 1.0 V
I
F
= 1 mA, I
C
= 1 mA All 0.75 1.0 V
SWITCHING TIMES
t
ON
Turn-on Time R
L
= 100
Ω
, I
F
= 10 mA,
V
CE
= 5 V, f
≤
30 Hz,
Pulse Width
≤
300 µs
All 5 µs
t
OFF
Turn-off Time All 100 µs
Symbol Characteristic Test Conditions Min. Typ. Max. Unit
V
ISO
Input-Output Isolation Voltage t = 1 Minute 4170 VAC
RMS
C
ISO
Isolation Capacitance V
I-O
= 0 V, f = 1 MHz 0.2 pF
RISO Isolation Resistance VI-O = ±500 VDC, TA = 25°C 1011 Ω
©2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
H11G1M, H11G2M Rev. 1.0.5 5
H11G1M, H11G2M — 6-Pin DIP High Voltage Photodarlington Optocouplers
Typical Performance Curves
Figure 3. Output Current vs. Input Current
IF – LED INPUT CURRENT(mA)
0.1 1 10
I
C
– NORMALIZED OUTPUT CURRENT
0.001
0.01
0.1
1
10
Normalized to:
VCE = 5 V
IF = 1 mA
I
C
– NORMALIZED OUTPUT CURRENT
Figure 4. Normalized Output Current
vs. Temperature
TA – AMBIENT TEMPERATURE (˚C)
-60 -40 -20 0 20 40 60 80 100 120
0.01
0.1
1
10
100
IF = 50mA
IF = 5mA
IF = 1mA
IF = 0.5mA
I
C
– NORMALIZED OUTPUT CURRENT
VCE – COLLECTOR – EMITTER VOLTAGE (V)
110
0.01
0.1
1
10
100
IF = 50 mA
IF = 10 mA
IF = 2 mA
IF = 1 mA
IF = 0.5 mA
Normalized to:
VCE = 5 V
IF = 1 mA
TA = 25˚C
Normalized to:
VCE = 5 V
IF = 1 mA
TA = 25˚C
Figure 5. Output Current
vs. Collector-Emitter Voltage
I
CEO
– DARK CURRENT (nA)
TA – AMBIENT TEMPERATURE (˚C)
0 102030405060708090 100
0.01
0.1
1
10
100
1000
Figure 6. Collector-Emitter Dark Current
vs. Ambient Temperature
VCE = 30 V
VCE = 1 0V
VCE = 80 V
Figure 7. Input Current vs. Total Switching Speed (Typical Values)
ton + toff – TOTAL SWITCHING SPEED (NORMALIZED)
0.1 1 10
I
F
– FORWARD CURRENT (mA)
0.1
1
10
Normalized to:
VCC = 5 V
IF = 10 mA
RL = 100 Ω
RL = 100 ΩRL = 1 kΩ
RL = 10 Ω
©2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
H11G1M, H11G2M Rev. 1.0.5 6
H11G1M, H11G2M — 6-Pin DIP High Voltage Photodarlington Optocouplers
Reflow Profile
Figure 8. Reflow Profile
300
280
260
240
220
200
180
160
140
120
100
80
60
40
20
0
°C
Time (s)
0 60 180120 270
260°C
> 245°C = 42 s
Time above
183°C = 90 s
360
1.822°C/s Ramp-up rate
33 s
©2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
H11G1M, H11G2M Rev. 1.0.5 7
H11G1M, H11G2M — 6-Pin DIP High Voltage Photodarlington Optocouplers
Ordering Information
Note:
2. The product orderable part number system listed in this table also applies to the H11G2M device.
Marking Information
Figure 9. Top Mark
Table 1. Top Mark Definitions
Part Number Package Packing Method
H11G1M DIP 6-Pin Tube (50 Units)
H11G1SM SMT 6-Pin (Lead Bend) Tube (50 Units)
H11G1SR2M SMT 6-Pin (Lead Bend) Tape and Reel (1000 Units)
H11G1VM DIP 6-Pin, DIN EN/IEC60747-5-5 Option Tube (50 Units)
H11G1SVM SMT 6-Pin (Lead Bend), DIN EN/IEC60747-5-5 Option Tube (50 Units)
H11G1SR2VM SMT 6-Pin (Lead Bend), DIN EN/IEC60747-5-5 Option Tape and Reel (1000 Units)
H11G1TVM DIP 6-Pin, 0.4” Lead Spacing, DIN EN/IEC60747-5-5 Option Tube (50 Units)
1 Fairchild Logo
2 Device Number
3 DIN EN/IEC60747-5-5 Option (only appears on component ordered with this option)
4 One-Digit Year Code, e.g., “4”
5 Digit Work Week, Ranging from “01” to “53”
6 Assembly Package Code
H11G1
1
2
6
43 5
V X YY
Q
www.onsemi.com
1
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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