© 2008 IXYS CORPORATION,All rights reserved
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 150°C 1000 V
VDGR TJ= 25°C to 150°C, RGS = 1MΩ1000 V
VGSS Continuous ± 30 V
VGSM Transient ± 40 V
ID25 TC= 25°C32A
IDM TC= 25°C, pulse width limited by TJM 75 A
IAR TC= 25°C16A
EAS TC= 25°C 1.5 J
dV/dt IS≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 10 V/ns
PDTC= 25°C 960 W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
TL1.6mm (0.062 in.) from case for 10s 300 °C
TSOLD Plastic body for 10s 260 °C
MdMounting torque (IXFK) 1.13/10 Nm/lb.in.
FCMounting force (IXFX) 20..120/4.5..27 Nm/lb.
Weight TO-264 10 g
TO-247 6 g
G = Gate D = Drain
S = Source TAB = Drain
Symbol Test Conditions Characteristic Values
(TJ = 25°C unless otherwise specified) Min. Typ. Max.
BVDSS VGS = 0V, ID = 3mA 1000 V
VGS(th) VDS = VGS, ID = 1mA 3.5 6.5 V
IGSS VGS = ± 30V, VDS = 0V ± 200 nA
IDSS VDS = VDSS 50 μA
VGS = 0V TJ = 125°C 2.5 mA
RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 320 mΩ
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Features
zFast intrinsic diode
zInternational standard packages
zUnclamped Inductive Switching (UIS)
rated
zLow package inductance
- easy to drive and to protect
Advantages
zEasy to mount
zSpace savings
zHigh power density
IXFK32N100P
IXFX32N100P
VDSS = 1000V
ID25 = 32A
RDS(on) ≤≤
≤≤
≤ 320mΩΩ
ΩΩ
Ω
trr ≤≤
≤≤
≤ 300ns
DS99777C(4/08)
PLUS247 (IXFX)
TO-264 (IXFK)
S
G
D(TAB)
(TAB)
Applications:
zSwitched-mode and resonant mode
power supplies
zDC-DC Converters
zLaser Drivers
zAC and DC motor controls
zRobotics and servo controls
PolarTM Power MOSFET
HiPerFETTM
IXYS reserves the right to change limits, test conditions, and dimensions.
IXFK32N100P
IXFX32N100P
Symbol Test Conditions Characteristic Values
(TJ = 25°C unless otherwise specified) Min. Typ. Max.
gfs VDS= 20V, ID = 0.5 • ID25, Note 1 13 21 S
Ciss 14.2 nF
Coss VGS = 0V, VDS = 25V, f = 1MHz 815 pF
Crss 60 pF
RGi Gate input resistance 1.50 Ω
td(on) Resistive Switching Times 50 ns
trVGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 55 ns
td(off) RG = 1Ω (External) 76 ns
tf43 ns
Qg(on) 225 nC
Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 85 nC
Qgd 94 nC
RthJC 0.13 °C/W
RthCS 0.15 °C/W
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(TJ = 25°C unless otherwise specified) Min. Typ. Max.
ISVGS = 0V 32 A
ISM Repetitive, pulse width limited by TJM 128 A
VSD IF = IS, VGS = 0V, Note 1 1.5 V
trr 300 ns
QRM 2.2 μC
IRM 15 A
Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
TO-264 (IXFK) Outline
Millimeter Inches
Min. Max. Min. Max.
A 4.82 5.13 .190 .202
A1 2.54 2.89 .100 .114
A2 2.00 2.10 .079 .083
b 1.12 1.42 .044 .056
b1 2.39 2.69 .094 .106
b2 2.90 3.09 .114 .122
c 0.53 0.83 .021 .033
D 25.91 26.16 1.020 1.030
E 19.81 19.96 .780 .786
e 5.46 BSC .215 BSC
J 0.00 0.25 .000 .010
K 0.00 0.25 .000 .010
L 20.32 20.83 .800 .820
L1 2.29 2.59 .090 .102
P 3.17 3.66 .125 .144
Q 6.07 6.27 .239 .247
Q1 8.38 8.69 .330 .342
R 3.81 4.32 .150 .170
R1 1.78 2.29 .070 .090
S 6.04 6.30 .238 .248
T 1.57 1.83 .062 .072
Dim.
Terminals: 1 - Gate
2 - Drain (Collector)
3 - Source (Emitter)
4 - Drain (Collector)
PLUS 247TM (IXFX) Outline
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.83 5.21 .190 .205
A12.29 2.54 .090 .100
A21.91 2.16 .075 .085
b 1.14 1.40 .045 .055
b11.91 2.13 .075 .084
b22.92 3.12 .115 .123
C 0.61 0.80 .024 .031
D 20.80 21.34 .819 .840
E 15.75 16.13 .620 .635
e 5.45 BSC .215 BSC
L 19.81 20.32 .780 .800
L1 3.81 4.32 .150 .170
Q 5.59 6.20 .220 0.244
R 4.32 4.83 .170 .190
IF = 16A, -di/dt = 100A/μs
VR = 100V, VGS = 0V
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
© 2008 IXYS CORPORATION,All rights reserved
IXFK32N100P
IXFX32N100P
Fig. 4. R
DS(on)
No rmal i zed to I
D
= 16A Valu e
vs. Jun ctio n Temperatu r e
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
2.8
3.0
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
R
DS(on)
- No rmali zed
V
GS
= 10V
I
D
= 32A
I
D
= 16A
Fig. 5. R
DS(on)
Nor mali z ed to I
D
= 16A Valu e
vs. Dr ain Cu r r ent
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
0 5 10 15 20 25 30 35 40 45 50 55 60 65
I
D
- Amperes
R
DS(on)
- No rmali zed
V
GS
= 10V
15V - - - -
T
J
= 125ºC
T
J
= 25ºC
Fig. 6. Maximum Drain Current vs.
Case Temp eratu r e
0
5
10
15
20
25
30
35
-50 -25 0 25 50 75 100 125 150
T
C
- Degrees Centigrade
I
D
- A mpe re s
Fig. 1. Output Characteristics
@ 25ºC
0
4
8
12
16
20
24
28
32
012345678910
V
DS
- Volt s
I
D
- A m p ere s
V
GS
= 15V
10V
9V
7V
8V
Fig. 2. Extended Output Characteristics
@ 25ºC
0
10
20
30
40
50
60
70
0 5 10 15 20 25 30
V
DS
- Volts
I
D
- A mpe re s
V
GS
= 15V
10V
9V
7V
8V
Fi g. 3. Outpu t Ch aracteri stics
@ 125ºC
0
4
8
12
16
20
24
28
32
0 2 4 6 8 10 12 14 16 18 20 22
V
DS
- V olts
I
D
- A m p ere s
V
GS
= 15V
10V
9V
7V
8V
6V
IXYS reserves the right to change limits, test conditions, and dimensions.
IXFK32N100P
IXFX32N100P
IXYS REF: F_32N100P(96)3-28-08-C
Fi g . 7. I n pu t Ad mi ttan ce
0
5
10
15
20
25
30
35
40
5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5
V
GS
- Vo lts
I
D
- A mp e re s
T
J
= 125ºC
25ºC
- 40ºC
Fig. 8. T ranscon ductan ce
0
5
10
15
20
25
30
35
40
0 5 10 15 20 25 30 35 40
I
D
- Amperes
g
f s - Siem ens
T
J
= - 40ºC
25ºC
125ºC
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
0
10
20
30
40
50
60
70
80
90
100
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
V
SD
- Volts
I
S
- A mp e re s
T
J
= 125ºC
T
J
= 25ºC
Fig. 10. Gate Charge
0
2
4
6
8
10
12
14
16
0 50 100 150 200 250 300
Q
G
- Nan oCoulom bs
V
GS
- V o lts
V
DS
= 500V
I
D
= 16A
I
G
= 10mA
Fig. 11. Capacitance
10
100
1,000
10,000
100,000
0 5 10 15 20 25 30 35 40
V
DS
- Volts
Capacitance - PicoFarads
f
= 1 MHz Ciss
Crss
Coss
Fig . 12. Maximum Tr an sien t Ther ma l
Impedance
0.001
0.010
0.100
1.000
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- ºC / W
