BAS56
SURFACE MOUNT
DUAL, ISOLATED HIGH CURRENT
SILICON SWITCHING DIODES
DESCRIPTION:
The CENTRAL SEMICONDUCTOR BAS56 consists
of two electrically isolated ultra-high speed silicon
switching diodes manufactured by the epitaxial planar
process and packaged in an epoxy molded surface
mount SOT-143 case. This device is designed for high
speed switching applications.
MARKING CODE: L51 or WL5
MAXIMUM RATINGS: (TA=25°C) SYMBOL UNITS
Continuous Reverse Voltage VR 60 V
Peak Repetitive Reverse Voltage VRRM 60 V
Continuous Forward Current IF 200 mA
Peak Repetitive Forward Current IFRM 400 mA
Peak Forward Surge Current, tp=1.0μs IFSM 4.0 A
Peak Forward Surge Current, tp=1.0s IFSM 1.0 A
Power Dissipation PD 350 mW
Operating and Storage Junction Temperature TJ, Tstg -65 to +150 °C
Thermal Resistance ΘJA 357 °C/W
ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN MAX UNITS
IR V
R=60V 100 nA
IR V
R=60V, TA=150°C 100 μA
IR V
R=75V 10 μA
VF I
F=10mA 0.75 V
VF I
F=200mA 1.0 V
VF I
F=500mA 1.25 V
CT V
R=0, f=1.0MHz 2.5 pF
trr I
F=IR=400mA, Irr=40mA, RL=100Ω 6.0 ns
Qs I
F=10mA, VR=5.0V, RL=500Ω 50 pC
VFR I
F=400mA, tr=30ns 1.2 V
VFR I
F=400mA, tr=100ns 1.5 V
SOT-143 CASE
R7 (25-August 2010)
www.centralsemi.com
BAS56
SURFACE MOUNT
DUAL, ISOLATED HIGH CURRENT
SILICON SWITCHING DIODES
SOT-143 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) CATHODE D1
2) CATHODE D2
3) ANODE D2
4) ANODE D1
MARKING CODE: L51 or WL5
PIN CONFIGURATION
www.centralsemi.com
R7 (25-August 2010)
