BCP5216TA - Diodes [Zetex]

BCP 51 / 52 / 53

Datasheet Number: DS35366 Rev. 2 – 2 1 of 7

www.diodes.com June 2011

BCP 51 / 52 / 53

PNP SILICON PLANAR MEDIUM POWER TRANSISTORS IN SOT223

Features

• I

C = -1A Continuous Collector Current

• Low Saturation Voltage VCE(sat) < -500mV @ -0.5A

• Gain groups 10 and 16

• Epitaxial Planar Die Construction

• Complementary NPN types: BCP54, 55 and 56

• Lead-Free, RoHS Compliant (Note 1)

• Halogen and Antimony Free. “Green” Devices (Note 2)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: SOT223

• Case Material: Molded Plastic, “Green” Molding

Compound (Note 2)

• UL Flammability Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Matte Tin Finish

• Weight: 0.112 grams (Approximate)

Applications

• Medium Power Switching or Amplification Applications

• AF driver and output stages

Ordering Information (Note 3)

Product Marking Reel size (inches) Tape width (mm) Quantity per reel

BCP51TA BCP 51 7 12 1,000

BCP5110TA BCP 5110 7 12 1,000

BCP5116TA BCP 5116 7 12 1,000

BCP5116TC BCP 5116 13 12 4,000

BCP52TA BCP 52 7 12 1,000

BCP5210TA BCP 5210 7 12 1,000

BCP5216TA BCP 5216 7 12 1,000

BCP53TA BCP 53 7 12 1,000

BCP5310TA BCP 5310 7 12 1,000

BCP5316TA BCP 5316 7 12 1,000

BCP5316TC BCP 5316 13 12 4,000

Notes: 1. No purposefully added lead.

2. Diodes Inc’s “Green” Policy can be found on our website at http://www.diodes.com

3. For packaging details, go to our website http://www.diodes.com

Marking Information

BCP = Product Type Marking Code, Line 1.

xxxx = Product Type Marking Code, Line 2 as follows:

BCP51 = 51 BCP52 = 52 BCP53 = 53

BCP5110 = 5110 BCP5210 = 5210 BCP5310 = 5310

BCP5116 = 5116 BCP5216 = 5216 BCP5316 = 5316

Top View Device Symbol

SOT223

C

E

B

Top View

Pin-Out

CC

B

E

xxxx

BCP

BCP 51 / 52 / 53

Datasheet Number: DS35366 Rev. 2 – 2 2 of 7

www.diodes.com June 2011

BCP 51 / 52 / 53

Maximum Ratings @ TA = 25°C unless otherwise specified

Characteristic Symbol BCP51 BCP52 BCP53 Unit

Collector-Base Voltage VCBO -45 -60 -100 V

Collector-Emitter Voltage VCEO -45 -60 -80 V

Emitter-Base Voltage VEBO -5 V

Continuous Collector Current IC -1 A

Peak Pulse Collector Current ICM -2

Continuous Base Current IB -100 mA

Peak Pulse Base Current IBM -200

Thermal Characteristics @ TA = 25°C unless otherwise specified

Characteristic Symbol Value Unit

Power Dissipation (Note 4) PD2 W

Thermal Resistance, Junction to Ambient (Note 4) RθJA 62 °C/W

Thermal Resistance, Junction to Leads (Note 5) RθJL 19.4 °C/W

Operating and Storage Temperature Range TJ, TSTG -65 to +150 °C

Notes: 4. For a device surface mounted on 50mm X 50mm FR4 PCB with high coverage of single sided 1 oz copper, in still air conditions; the device is measured

when operating in a steady-state condition.

5. Thermal resistance from junctio n to solder-point (at the end of the collector lead).

BCP 51 / 52 / 53

Datasheet Number: DS35366 Rev. 2 – 2 3 of 7

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BCP 51 / 52 / 53

Thermal Characteristics

100µ 1m 10m 100m 1 10 100 1k

0

20

40

60

80

100

120

140

160

0 20 40 60 80 100 120 140 160

0.0

0.5

1.0

1.5

2.0 5 0 mm x 50mm

1oz Cu

Derating Cu rve

Temperature (°C)

Max P owe r Di ssipa t i on (W)

100µ 1m 10m 100m 1 10 100 1k

0

10

20

30

40

50

60 50mm x 50mm 1oz Cu

Tamb = 25°C

Pu lse Power Dissipation

Puls e Width (s )

Tran sient Thermal Impedance

D=0.5

D=0.2

D=0.1

Single Pulse

D=0.05

Th er mal R e si sta n ce (°C/W)

Pul se Width ( s)

50mm x 50mm 1oz Cu

Tamb = 25°C

S ingle pu ls e

Maximum Power (W)

BCP 51 / 52 / 53

Datasheet Number: DS35366 Rev. 2 – 2 4 of 7

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BCP 51 / 52 / 53

Electrical Characteristics @ TA = 25°C unless otherwise specified

Characteristic Symbol Min Typ Max Unit Test Condition

Collector-Base

Breakdown Voltage

BCP51 BVCBO -45 - - V

IC = -100µA

BCP52 -60

BCP53 -100

Collector-Emitter

Breakdown Voltage (Note 6)

BCP51 BVCEO -45 - - V

IC = -10mA

BCP52 -60

BCP53 -80

Emitter-Base Breakdown Voltage BVEBO -5 - - V

IE = -10µA

Collector Cut-off Current ICBO - -

-0.1

-20 µA VCB = -30V

VCB = -30V, TA = 150°C

Emitter Cut-off Current IEBO - - -20 nA

VEB = -4V

Static Forward Current Transfer Ratio (Note 6) All versions hFE

25

40

25

-

250

- -

IC = -5mA, VCE = -2V

IC = -150mA, VCE = -2V

IC = -500mA, VCE = -2V

10 gain grp 63 - 160 IC = -150mA, VCE = -2V

16 gain grp 100 - 250 IC = -150mA, VCE = -2V

Collector-Emitter Saturation Voltage (Note 6) VCE

(

sat

)

- - -0.5 V

IC = -500mA, IB = -50mA

Base-Emitter Turn-On Voltage (Note 6) VBE

(

on

)

- - -1.0 V

IC = -500mA, VCE = -2V

Transition Frequency fT 150 - - MHz

IC = -50mA, VCE = -10V

f = 100MHz

Output Capacitance Cobo - - 25 pF

VCB = -10V, f = 1MHz

Notes: 6. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.

0

0.2

0.4

0.6

0.8

1.0

012345

-V , COLLECTOR-EMITTER VOLTAGE (V)

CE

I,

C

O

LLE

C

T

O

R

C

U

R

E

N

T

(A)

C

I = 2mA

B

I = 4mA

B

I = 6mA

B

I = 8mA

B

I = 10mA

B

Fig. 1 Typical Collector Current

vs. C ollecto r -Em i t t er Volt age

0

100

200

300

400

500

0.001 0.01 0.1 1 10

-I , COLLECTOR CURRENT (A)

C

h, D

C

U

R

EN

T

G

AIN

FE

Fig. 2 Typical DC Current Gain vs. Collector Current

T = -55°C

A

T = 25°C

A

T = 85°C

A

T = 150°C

A

V = -5V

CE

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Datasheet Number: DS35366 Rev. 2 – 2 5 of 7

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BCP 51 / 52 / 53

0

0.2

0.4

0.6

0.8

1.0

0.001 0.01 0.1 1 10

-I , COLLECTOR CURRENT(A)

C

-V , BASE-EMI

T

E

R

T

U

R

N

-

O

N

V

O

L

T

A

G

E (V)

BE(ON)

Fig 3 Typical Base-Emitter Turn-On Voltage

vs. Collector Current

T = -55°C

A

T = 25°C

A

T = 85°C

A

T = 150°C

A

V = -2V

CE

0

0.1

0.2

0.3

0.4

0.5

0.001 0.01 0.1 1 10

-I , COLLECTOR CURRENT (A)

C

-V ,

C

O

LLE

C

T

O

R

-EMI

T

E

R

SATURATION VOLTAGE (V)

CE(SAT)

Fig. 4 Typical Collector-Emitter Saturation Voltage

vs. C ollector Current

T = -55°C

A

T = 25°C

A

T = 85°C

A

T = 150°C

A

0

0.2

0.4

0.6

0.8

1.0

1.2

0.001 0.01 0.1 1 10

-I , COLLECTOR CURRENT (A)

C

-V , BASE-EMI

T

E

R

SA

T

U

R

A

T

I

O

N V

O

L

T

A

G

E (V)

BE(SAT)

Fig. 5 T y pical Base-Emitter Saturation Vo ltage

vs. Col lector Cu r rent

T = -55°C

A

T = 25°C

A

T = 85°C

A

T = 150°C

A

I / I = 10

CB

0

50

100

150

200

250

300

020406080100

-I , COLLECTOR CURRENT (mA)

C

f,

G

AIN-BANDWID

T

H

P

R

O

D

U

C

T

(M

H

z)

T

Fig. 6 Typical Gain-Bandwidth Product vs. Collector Current

V = -5V

CE

f = 100MHz

0

20

40

60

80

100

120

140

160

010203040

V , REVERSE VOLT AGE (V)

R

CAPACITANCE(pF)

Fig. 7 Typical Capacitance Characteristics

C

obo

C

ibo

f = 1MHz

BCP 51 / 52 / 53

Datasheet Number: DS35366 Rev. 2 – 2 6 of 7

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BCP 51 / 52 / 53

Package Outline Dimensions

Suggested Pad Layout

SOT223

Dim Min Max Typ

A 1.55 1.65 1.60

A1 0.010 0.15 0.05

b1 2.90 3.10 3.00

b2 0.60 0.80 0.70

C 0.20 0.30 0.25

D 6.45 6.55 6.50

E 3.45 3.55 3.50

E1 6.90 7.10 7.00

e — — 4.60

e1 — — 2.30

L 0.85 1.05 0.95

Q 0.84 0.94 0.89

All Dimensions in mm

Dimensions Value (in mm)

X1 3.3

X2 1.2

Y1 1.6

Y2 1.6

C1 6.4

C2 2.3

A1

A

X2

C1

C2

X1

Y2

Y1

BCP 51 / 52 / 53

Datasheet Number: DS35366 Rev. 2 – 2 7 of 7

www.diodes.com June 2011

BCP 51 / 52 / 53

IMPORTANT NOTICE

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,

INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE

(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

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without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the

application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or

trademark rights, nor the rights of others. Any Cus tomer or user of this document or prod ucts described herein in such applications shall assume

all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated

website, harmless against all damages.

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written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

labeling can be reasonably expected to result in significant injury to the user.

B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the

failure of the life support device or to affect its safety or effectiveness.

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acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their pro ducts and an y

use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related

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