MKE38P600LB - IXYS - Pdf.Support

Surface Mount Power Device(SMPD) and Mini SMPD Packages

January 2013

P R ODU C T BRIEF

Lighter weight, more power(ultra-low proﬁle, energy eﬃcient, and rugged)

SMPD OVERVIEW

IXYS introduces a new packaging technology – the Surface Mount Power Device (SMPD)

package. It is an expansion of the ISOPLUS™ package porolio, which has been providing

isolated-package soluons to the power electronics industry for more than a decade.

Compared to copper-based lead-frame packages, these devices exhibit beer thermal perfor-

mance, lower weight, and beer power cycling capability.

The SMPD package can be easily surface-mounted on a Printed Circuit Board (PCB) using a

standard pick-and-place and reﬂow soldering process. No costly screws, cables, bus-bars or

hand soldered contacts are needed. Weighing only 8g, it is much lighter (typically by 50%)

than comparable convenonal power modules, thereby enabling lower weight power

systems for IXYS customers. This is one of the key “Green” iniaves of IXYS Corporaon in

developing new products for the Cleantech industry that are lighter in weight. Moreover, due

to its compact and ultra-low proﬁle package, it is possible to use the same heat sink for

mulple devices, saving PCB space. Another added beneﬁt of being smaller and lighter is that

it provides a beer protecon against vibraons and g-forces, especially if used in portable

appliances, increasing the life expectancy and reliability of these devices. IXYS is virtually the

ﬁrst power semiconductor company to oﬀer surface-mountable high-voltage Power MOSFETs

and IGBTs.

A ceramic isolaon of up to 4.5kV is achieved with the Direct Copper Bond (DCB) substrate

technology – an electrically isolated tab is provided for heat sinking. The DCB provides low

thermal impedance and best-in-class power and temperature cycling capabilies. The

ISOPLUS™ advantage also facilitates having mulple die on the same single substrate – buck,

boost, phase-leg, full-bridge, half-bridge conﬁguraons are implementable.

“This unique device is part of our iniave of taking power systems on a diet, literally, with the

aim of reducing the weight of the power semiconductors in a typical power system. Weight

reducon is a key eﬀort in reducing greenhouse gas emissions in the producon, shipment

and use of power products,” commented Dr. Nathan Zommer, Founder and CEO of IXYS

Corporaon, regarding the recently released 1kV/30A Q3 HiperFET™ Power MOSFET in the

SMPD package. “Our lighter products use less material, require less energy to ship, and result

in lower weight products for our customers, a crical desired feature in a lot of applicaons,

including portable equipment, and for the automove and transportaon industry.”

The new surface-mountable SMPD package is an ideal replacement part for bulky tradional

power modules. IXYS is able to oﬀer various SMPD topologies – the MMIX1F44N100Q3 is a

single die 1000V/30A HiperFET™ Power MOSFET, the IXA68PF650LB a 1200V/68A dual IGBT

with an-parallel diodes, the DMA90U1800LB a 1800V/99A three phase recﬁer diode. Upon

request, IXYS can manufacture other customer-speciﬁc conﬁguraons.

www.ixys.com

APPLICATIONS

DC-DC converters

Baery chargers

Switching and resonant power supplies

DC choppers

Temperature and lighng controls

Motor drives

E-bikes and electric and hybrid vehicles

Solar inverters

Inducon heaters

CONFIGURATIONS

Buck

Boost

Full-bridge

Half-bridge

Phase leg

Single

SMPD ADVANTAGES

Ultra-low and compact package proﬁle

(5.3mm height x 24.8mm length x 32.3mm width)

Surface mountable via standard reﬂow process

(Available in Tape & Reel packaging)

Low package weight (8g)

Up to 4500V ceramic isolaon(DCB)

Low package inductance

Excellent thermal performance

High power cycling capability

IXYS

POWER

SMPD-B

SMPD-X

The above accentuates the compact and low proﬁle nature of the device. Compared to a convenonal high power package such as the SOT-227, the IXYS

SMPD features ¼ the weight and 1/3 the volume and provides similar electrical and thermal characteriscs.

www.ixys.com PBNSMPD_1_0January 2013

Direct Copper Bond (DCB) isolaon

• Provides up to 4500V ceramic isolaon

• Improves temperature and power cycling capabilies

• Reduces EMI/RFI due to low coupling capacitance between die

and heat sink

• Lowers thermal resistance (RthJS)

• Allows new circuit conﬁguraons

Ultra-low proﬁle SMPD package

SMPD

Height=5.3mm

SOT-227

Height=8.92mm

TO-264

Height=4.8mm

PLUS247

Height=4.8mm

ultra-low proﬁle

SMPD Package Outlines

The following points should be considered when aaching a heat sink

to the package to ensure a good thermal contact between them. In

general the SMPD is soldered to a PCB as shown in Figure 1. The contact

surfaces of the heat sink must be ﬂat and free of scratches.

• Two holes (30.48mm apart) should be created on the heat sink

surface.

• The recommended depth of thread for an Aluminum (Al) heat sink is

12mm and for a Copper (Cu) one 10mm.

• Unevenness should be less than 50µm over a distance of 100mm and

roughness less than 10µm.

• A thin layer of thermal grease (thickness between 60µm and 80µm)

should be applied to the surface of the heat sink or the base of the

package.

• A recommended mounng screw is M3.5 or 6-32 UNC; ghten the

screws clockwise.

Heat Sink Mounng Guidelines

Figure 1: SMPD heat sink assembly

SMPD-X SMPD-A

Q3-Class HiperFETTM

PolarTM HiperFETTM

www.ixys.com PBNSMPD_1_0January 2013

SMPD Power MOSFETs Summary Table

TrenchT2TM GigaMOSTM

GigaMOSTM TrenchTM HiperFETTM

Polar3TM HiPerFETTM

Polar3™ HiperFET™ Modules

Part

Number

ID(cont)

TC=25°C

(A)

600

550

500

235

334

168

130

102

108

RDS(on)

max

TJ=25°C

(Ω)

0.0013

0.0016

0.0044

0.0026

0.0083

0.013

0.02

0.016

0.043

0.29

0.245

Ciss

typ

(pF)

40000

41000

47500

47000

28000

16200

18600

19000

13600

typ

(nC)

590

595

545

715

670

378

345

335

268

250

310

264

trr

(ns)

100

150

140

200

250

300

(W)

830

680

570

520

500

694

RthJC

max

(°C/W)

0.18

0.22

0.24

0.25

0.18

Package

Style

SMPD-X

SMPD-A

SMPD-X

VDSS

max

(V)

150

100

200

250

300

500

600

1000

1100

MMIX1T600N04T2

MMIX1T550N055T2

MMIX1F520N075T2

MMIX1F360N15T2

MMIX1F420N10T

MMIX1F230N20T

MMIX1F180N25T

MMIX1F160N30T

MMIX1F210N30P3

MMIX1F132N50P3

MMIX4F20N50P3

MMIX4F16N60P3

MMIX1F44N100Q3

MMIX1F40N110P

SMPD IGBT Summary Table

Part Number VCES

(V)

IC25

(A)

VCE(sat)

max

TJ=25°C

(V)

Eoﬀ

typ

TJ=125°C

(mJ)

RthJC

max

IGBT

(°C/W)

Conﬁguraon Package style

600

1200

2500

600

650

1200

2500

3000

2.8 (TJ=150°C)

3.45 (TJ=150°C)

5.4

3.7

3.55

0.86

1.7

4.1

0.5

0.24

0.125

0.39

0.31

0.29

1.13

0.85

0.58

0.55

1.25

0.83

Copacked (FRED)

Single

Copacked (FRED)

Single

Half-bridge

Buck

Boost

Phase-leg

Dual

Phase-leg

Boost

Phase-leg

Boost

Phase-leg

Full-bridge

MMIX1X100N60B3H1

MMIX1X200N60B3H1

MMIX1X200N60B3

MMIX1G320N60B3

MMIX1Y82N120C3H1

MMIX1Y100N120C3H1

MMIX1G120N120A3V1

MMIX1G75N250

MMIX2S50N60B4D1

IGK60Q600LB

IGK60R600LB

IXA27PF650LB

IXA68PF650LB

IXA100XF650ALB

IXA20PG1200DHGLB

IXA20RG1200DHGLB

IXA30PG1200DHGLB

IXA30RG1200DHGLB

IXA40RG1200DHGLB

IXA40PG1200DHGLB

MMIX4G20N250

MMIX4B12N300

MMIX4B20N300

SMPD-X

SMPD-A

SMPD-B

SMPD-A

105

175

223

400

220

110

2x 50

1.8

1.7

1.5

3.4

3.5

2.2

2.9

under development

2.1

1.8

2.2

1.8

2.15

3.1

3.2

Discretes

Modules

BiMOSFETs

Under development

(Full-bridge)

www.ixys.com PBNSMPD_1_0January 2013

Mini SMPD Overview

To help make even lighter, more eﬃcient, and compact power conversion systems possible, IXYS

oﬀers a smaller version of the SMPD package – the Mini SMPD, which is illustrated in Figure 2

below. Just like in the SMPD, an electrical isolaon of 4500V between the semiconductor chip and

base copper is achieved with the Direct Copper Bond (DCB) technology, which is a well-known

technique for high-voltage isolaon and provides excellent thermal conducvity and high-current

carrying capability. The structure consists of three layers (Copper, Alumina substrate, and

Copper); the Alumina substrate is a ceramic layer situated between the two copper layers and

supports the necessary voltage isolaon. The expansion coeﬃcient of the DCB is close to that of

Silicon, resulng in reliable high-temperature cycling. Compared to standard packages, the Mini

SMPD exhibits beer electromagnec interference (EMI) performance due to its lower parasic

capacitances and inductances and reduced current loops.

The IXYS Mini SMPD package can be ulized in a wide variety of industrial, consumer, medical,

and green-energy applicaons, including inverters, baery chargers, switch-mode and resonant

power supplies, temperature and lighng controls, high-frequency plasma generators, motor

drives, E-bikes, and electric and hybrid vehicles.

Mini SMPD ADVANTAGES

• High-voltage electrical isolaon (4500V)

• Lower thermal resistance compared to standard packages (TO-247, TO-264, SOT-227B)

• High component density/ﬂexible conﬁguraons (H-bridge, half-bridge, boost, buck, phase-leg)

• High current carrying capability

• Low parasic capacitances and inductances

• Low package weight (5g)

• Beer protecon against vibraons and g-forces

PLUS247

Height=4.8mm

SMPD

Height=5.3mm

SOT-227

Height=8.92mm

TO-264

Height=4.8mm

Mini-SMPD

Height=5.3mm

The ﬁgure above illustrates a comparison of the Mini-SMPD with other industry standard packages. The volume of it (3cm3) is only at 60% of that of the

SMPD (1.8cm3). But the Mini SMPD is able to maintain a high voltage isolaon of 4.5kV and weighs just 5g.

Light and compact Mini SMPD package

Mini SMPD Package Outlines

Figure 2: Mini SMPD package

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Authorized Distributor

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