fiAAMOSPEC HIGH POWER NPN SILICON POWER TRANSISTORS ... designed for use in general-purpose amplifier and switching application . FEATURES: * Recommend for 60 W High Fiderity Audio Frequency Amplifier Output stage * Complementary to 2SA1186 MAXIMUM RATINGS NPN 2S8C2837 10 AMPERE POWER TRANASISTOR 150 VOLTS 100 WATTS 2? TO-247(3P) ~B_.. * M aM, Sra | 123 H 7 Li aie oO. [= D P Characteristic Symbol 2802837 Unit Collector-Emitter Voltage VoEo 150 Vv Collector-Base Voltage Vepo 150 V Emitter-Base Voitage Vero 5.0 Vv Collector Current - Continuous le 10 A - Peak lom 15 Base current lp 2.0 A Total Power Dissipation @T, = 25C Py 100 Ww Derate above 25C 0.8 wc Operating and Storage Junction. Ty. Tst c Temperature Range -55 to +150 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance Junction to Case R8jc 1.25 CAW FIGURE -1 POWER DERATING 100 e 80 < = S 60 = 8 40 E 20 0 0 2 50 7 100 125 150 To , TEMPERATURE(C) PIN 1.BASE 2.COLLECTOR 3.EMITTER DIM MILLIMETERS MIN MAX A 20.63 | 22.38 B 15.38 | 16.20 Cc 1.90 2.70 D 5.10 6.10 E 1481 | 15.22 F 11.72 | 12.84 G 4.20 4.50 H 1.82 2.46 l 2.92 3.23 J 0.89 153 K 5.26 5.66 L 18.50 | 21.50 M 4.68 5.36 N 2.40 2.80 oO 3.25 3.65 P 0.55 0.702SC2837 NPN ee ELECTRICAL CHARACTERISTICS ( T, = 25C unless otherwise noted ) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage VBR)CEO V (1,= 25 mA, I,= 0 ) 150 Collector Cutoff Current lepo uA (Vopg= 150 V, I= 0) 100 Emitter Cutoff Current leso uA ( Vep= 5.0 V, I= 0) 100 ON CHARACTERISTICS (1) DC Current Gain (I,= 3.0 A, Vog= 4.0 V) hFE 30 Collector-Emitter Saturation Voltage VcE{saty Vv (1,= 5.0 A, I,= 500 mA) 2.0 DYNAMIC CHARACTERISTICS Current-Gain-Bandwidth Product f, MHz (lg = 1.0 A, Veg = 12 V, f = 1.0 MHz ) 10 SWITCHING CHARATERISTICS Turn-on Time Veg= 60 V, I= 5.0A t on 0.30(typ) us Storage Time tpi jez OS A t. 1.50(typ) us =12 0 Fall Time . ty 0.45(typ) us (1) Pulse Test: Pulse Width =300 us,Duty Cycle = 2.0%2SC2837 NPN a ACTIVE REGION SAFE OPERATING AREA (SOA) There are two limitation on the power handling ability of a transistor:average junction temperature and second breakdown safe operating area curves indicate = I-Vce limits of the transistor that must be observed for reliable operation i.e., the transistor must not be subjected to greater dissipation than curves indicate. The data of SOA curve is base on Tipq=150 C; Tc is variable depending on conditions. second breakdown pulse limits are valid for duty cycles to 10% provided SINGLE NONREPETITIVE Typi50C, At high case temperatures, thermal limita- PULSE To=25C tion will reduce the power that can be handled to values CURVES MUST BE DERA less than the limitations imposed by second breakdown. LINEARLY WITH INCREASE IN TEMPERATURE Ic, COLLECTOR CURRENT (Amp.) 0. 20 3.0 0 70 10 20 8 0 70 100 200 Vee , COLLECTOR EMITTER (VOLTS) VCE(sat) - Ip Ic - Vee ic , COLLECTOR CURRENT (A) Vee , COLLECTOR EMITTER VOLTAGE (VOLTS) 0 0s 1.0 15 2.0 * 0.5 1 15 2 25 3 35 4 ts, BASE CURRENT (A) Vce , COLLECTOR-EMITTER VOLTAGE (V) Ic - Vbe DC CURRENT GAIN ic , COLLECTOR CURRENT (A) hre , DG CURRENT GAIN 0 Qa 08 42 18 20 002 005 01 O02 05. 10 +20 $0. 10 Vee , BASE - EMITTER VOLTAGE (Vv) ic , COLLECTOR CURRENT (AMP)