CREAT BY ART
- Low power loss, high efficiency
- Ideal for automated placement
- Guardring for overvoltage protection
- High surge current capability
- Halogen-free according to IEC 61249-2-21 definition
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - halogen-free
Base P/N with prefix "H" on packing code - AEC-Q101 qualified
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
with prefix "H" on packing code meet JESD 201 class 2 whisker test
V
RRM
35 45 50 60 90 100 150 V
V
RMS
24 31 35 42 63 70 105 V
V
DC
35 45 50 60 90 100 150 V
I
F(AV)
A
I
RRM
A
0.88
0.78
0.98
0.88
dV/dt V/μs
R
θJC O
C/W
T
JO
C
T
STG O
C
Document Number: DS_D1309057 Version: I13
MBRS1035CT thru MBRS10150CT
Taiwan Semiconductor
Dual Common Cathode Schottk
y
Rectifier
FEATURES
- Moisture sensitivity level: level 1, per J-STD-020
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
MECHANICAL DATA
Case: TO-263AB (D
2
PAK)
TO-263AB (D
2
PAK)
Polarity: As marked
Weight: 1.37 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T
A
=25 unless otherwise noted)
PARAMETER SYMBOL
MBRS
1035
CT
MBRS
1045
CT
MBRS
1050
CT
MBRS
1060
CT
MBRS
1090
CT
A
MBRS
10100
CT
MBRS
10150
CT
Unit
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load I
FSM
120 A
Peak repetitive reverse surge current (Note 1)
Maximum average forward rectified current 10
Peak repetitive forward current
(Rated VR, Square wave, 20KHz) I
FRM
10
Maximum instantaneous forward voltage (Note 2)
I
F
= 5 A, T
J
=25
I
F
= 5 A, T
J
=125
I
F
= 10 A, T
J
=25
I
F
= 10 A, T
J
=125
V
F
V
0.70 0.80 0.85
0.57
mA
5
0.65 0.75
0.80 0.90 0.95
0.67 0.75 0.85
Voltage rate of change (Rated V
R
)10000
Typical thermal resistance
Operating junction temperature range - 55 to +150
Maximum reverse current @ rated VR T
J
=25
T
J
=100
T
J
=125
I
R
0.1
Storage temperature range - 55 to +150
Note 1: tp = 2.0 μs, 1.0KHz
Note 2: Pulse test with PW=300μs, 1% duty cycle
1
15 10 -
-
2
PART NO.
PART NO.
MBRS1060CT
MBRS1060CT
MBRS1060CT
(TA=25 unless otherwise noted)
Document Number: DS_D1309057 Version: I13
MBRS1035CT thru MBRS10150CT
Taiwan Semiconductor
ORDERING INFORMATION
AEC-Q101
QUALIFIED
PACKING COD E GREEN COMPOUND
CODE
PACKAGE PACKING
MBRS10xxCT
(Note 1) Prefix "H" RN Suffix "G" D
2
PAK 800 / 13" Paper reel
C0 D
2
PAK 50 / Tube
Note 1: "xx" defines voltage from 35V (MBRS1035CT) to 150V (MBRS10150CT)
EXAMPLE
PREFERRED P/N AEC-Q101
QUALIFIED PACKING CODE GREEN COMPOUND
CODE DESCRIPTION
MBRS1060CT RN RN
MBRS1060CT RNG RN G Green compound
MBRS1060CTHRN H RN AEC-Q101 qualified
RATINGS AND CHARACTERISTICS CURVES
0
2
4
6
8
10
12
50 60 70 80 90 100 110 120 130 140 150
AVERAGE FORWARD A
CURRENT (A)
CASE TEMPERATURE (oC)
FIG.1 FORWARD CURRENT DERATING CURVE
RESISTIVE OR
INDUCTIVELOAD
0
30
60
90
120
150
180
1 10 100
PEAK FORWARD SURGE CURRENT (A)
NUMBER OF CYCLES AT 60 Hz
FIG. 2 MAXIMUM NON-REPETITIVE FORWARD SURGE
CURRENT PER LEG
8.3ms Single Half Sine Wave
JEDEC Method
0.001
0.01
0.1
1
10
100
0 20 40 60 80 100 120 140
INSTANTANEOUS REVERSE A
CURRENT (mA)
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
FIG. 4 TYPICAL REVERSE CHARACTERISTICS PER
LEG
TJ=75
TJ=125
TJ=25
0.1
1
10
100
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3
INSTANTANEOUS FORWARD A
CURRENT (A)
FORWARD VOLTAGE (V)
FIG. 3 TYPICAL FORWARD CHARACTERISTICS
PER LEG
MBRS1050CT-1060CT
MBRS1035CT-1045CT
MBRS10150CT
MBRS1090CT-10100CT
Min Max Min Max
A-10.5 - 0.413
B 14.60 15.88 0.575 0.625
C 2.41 2.67 0.095 0.105
D 0.68 0.94 0.027 0.037
E 2.29 2.79 0.090 0.110
F 4.44 4.70 0.175 0.185
G 1.14 1.40 0.045 0.055
H 1.14 1.40 0.045 0.055
I 8.25 9.25 0.325 0.364
J 0.36 0.53 0.014 0.021
K 2.03 2.79 0.080 0.110
P/N = Specific Device Code
G = Green Compound
YWW = Date Code
F = Factory Code
Document Number: DS_D1309057 Version: I13
MBRS1035CT thru MBRS10150CT
Taiwan Semiconductor
PACKAGE OUTLINE DIMENSIONS
DIM. Unit (mm) Unit (inch)
16.9
SUGG ESTED PAD LAY OUT
Symbol Unit (mm)
A 10.8
B8.3
Unit (inch)
0.425
F9.5
G2.5
MARKING DIAGRAM
C1.1
D3.5
E
0.327
0.043
0.138
0.665
0.374
0.098
0
100
200
300
400
500
600
700
800
900
1000
0.1 1 10 100
JUNCTION CAPACITANCE (pF) A
REVERSE VOLTAGE (V)
FIG. 5 TYPICAL JUNCTION CAPACITANCE
f=1.0MHz
Vsig=50mVp-p
0.1
1
10
100
0.01 0.1 1 10 100
TRANSIENT THERMAL IMPEDANCE A
(/W)
T-PULSE DURATION(s)
FIG. 6 TYPICAL TRANSIENT THERMAL IMPEDANCE PER
LEG
CREAT BY ART
assumes no responsibility or liability for any errors inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied,to
any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or seling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
Document Number: DS_D1309057 Version: I13
MBRS1035CT thru MBRS10150CT
Taiwan Semiconductor
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,