CM1800DY-34S Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com Dual Half-Bridge IGBT HVIGBT Series Module 1800 Amperes/1700 Volts A AN F AP AQ J (18 PLACES) E2 G2 E2 C1 C1 G C2 F S L C2E1 V C B D C2E1 K G1 E1 AG AF AF AH F AV FW AB AU AD AC (SCREWING DEPTH) U R F N M (8 PLACES) AF T C1 P AF K Q K AT AA L L E F X Y P L E2 AS H (12 PLACES) AR AC AJ AM AK AL AF AF AW Z (SCREWING DEPTH) F AE Tolerance Otherwise Specified (mm) Division of Dimension Tolerance 0.5 to 3 0.2 over 3 to 6 0.3 over 6 to 30 0.5 over 30 to 120 0.8 over 120 to 400 1.2 The tolerance of size between terminals is assumed to 0.4 G2 E2 (Es2) C2 (Cs2) Tr2 E2 E2 C1 C1 C2E1 Di2 Di1 C2E1 Tr1 G1 E1 (Es1) C1 (Cs1) TH1 NTC TH2 Outline Drawing and Circuit Diagram Dimensions Inches Millimeters Dimensions Inches Millimeters A B C D E F G H J K L M N P Q R S T U V W X Y 12.2 5.6 4.96 1.89 1.85 0.28 2.28 0.210.004 Dia. M6 Metric 1.65 0.91 M4 Metric 0.35 0.47 0.21 0.33 4.92 0.6 0.83 1.5 2.04 1.85+0.04/-0.02 1.55 310.0 142.5 126.0 48.0 46.9 7.0 58.0 5.50.1 Dia. M6 42.0 23.0 M4 9.0 11.9 5.4 8.5 125.0 15.0 21.0 38.0 51.9 47.1+1.0/-0.5 39.4 Z AA AB AC AD AE AF AG AH AJ AK AL AM AN AP AQ AR AS AT AU AV 0.63 0.24 0.16 0.45 2.01+0.04/-0.02 0.32 0.55 2.05 0.59 7.01 3.98 1.63 1.54 11.42 9.13 6.85 4.56 0.39 0.03 0.02 0.16 16.0 6.2 4.0 11.5 51.0+1.0/-0.5 8.2 14.0 52.0 15.0 178.0 101.0 41.5 39.0 290.0 232.0 174.0 116.0 10.0 8.0 5.0 4.0 AW 1.425+0.04/-0.02 36.2+1.0/-0.5 6/14 Rev. 4 Description: Powerex IGBT Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a half-bridge configuration with each transistor having a reverseconnected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features: Low Drive Power Low VCE(sat) Discrete Super-Fast Recovery Free-Wheel Diode Isolated Baseplate for Easy Heat Sinking NTC Thermistor Applications: AC Motor Control Motion/Servo Control Photovoltaic/Wind UPS Inverter Ordering Information: Example: Select the complete module number you desire from the table below -i.e. CM1800DY-34S is a 1700V (VCES), 1800 Ampere Dual HalfBridge IGBT HVIGBT Power Module. Type Current Rating Amperes VCES Volts (x 50) CM 1800 34 1 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM1800DY-34S Dual Half-Bridge IGBT HVIGBT Module 1800 Amperes/1700 Volts Absolute Maximum Ratings, Tj = 25C unless otherwise specified Inverter Part IGBT/FWDi Characteristics Symbol Rating Units Collector-Emitter Voltage (VGE = 0V) VCES 1700 Volts Gate-Emitter Voltage (VCE = 0V) VGES 20 Volts IC 1800 Amperes ICRM 3600 Amperes Ptot 11535 Watts Collector Current (DC, TC = 105C)*2,*4 Collector Current (Pulse, Repetitive)*3 Total Maximum Power Dissipation (TC = 25C)*2,*4 Emitter Current (DC)*2 *1 1800 Amperes IERM*1 IE 3600 Amperes Symbol Rating Units VISO 4000 V Maximum Junction Temperature, Instantaneous Event (Overload) Tj(max) 175 C Maximum Case Temperature*4 TC(max) 125 C Emitter Current (Pulse, Repetitive)*3 Module Tr2 Di2 Di1 Tr1 Tr2 Tr2 Di2 Di1 Tr1 Tr2 Di1 Di2 198.0 226.2 256.0 284.2 *1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (FWDi). *2 Junction temperature (Tj) should not increase beyond maximum junction temperature (Tj(max)) rating. *3 Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating. *4 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface (mounting side) of the baseplate and the heatsink side just under the chips. Refer to the figure to the right for chip location. The heatsink thermal resistance should be measured just under the chips. Tr1 Tr2 Di2 Tr1 Tr2 Di1 Di2 Di1 Tr1 Tr2 Di2 Tr1 Tr2 Di1 Di2 Di1 Tr1 Tr2 Di2 Tr1 101.2 96.2 87.7 82.7 Di1 54.2 Tr1 40.7 Di1 Tr2 Di1 Di2 0 C 24.0 C -40 ~ 125 52.2 -40 ~ 150 Tstg 82.0 Tj(opr) Storage Temperature 110.2 Operating Junction Temperature, Continuous Operation (Under Switching) 140.0 Isolation Voltage (Terminals to Baseplate, RMS, f = 60Hz, AC 1 minute) 168.2 Characteristics Tr1 Di2 59.2 45.7 24.5 Th 0 25.7 54.0 46.5 83.7 112.0 141.7 170.0 199.7 228.0 257.7 286.0 0 LABEL SIDE Each mark points to the center position of each chip. Tr1 / Tr2: IGBT 2 Di1 / Di2: FWDi Th: NTC Thermistor 6/14 Rev. 4 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM1800DY-34S Dual Half-Bridge IGBT HVIGBT Module 1800 Amperes/1700 Volts Electrical Characteristics, Tj = 25C unless otherwise specified Inverter Part IGBT/FWDi Characteristics Symbol Test Conditions Min. Typ. Max. Units Collector-Emitter Cutoff Current ICES VCE = VCES, VGE = 0V -- -- 1.0 mA Gate-Emitter Leakage Current IGES VGE = VGES, VCE = 0V -- -- 5.0 A Gate-Emitter Threshold Voltage VGE(th) IC = 180mA, VCE = 10V 5.4 6.0 6.6 Volts Collector-Emitter Saturation Voltage VCE(sat) IC = 1800A, VGE = 15V, Tj = 25C*5 -- 2.20 2.70 Volts (Terminal) IC = 1800A, VGE = 15V, Tj = 125C*5 -- 2.40 -- Volts IC = 1800A, VGE = 15V, Tj = 150C*5 -- 2.45 -- Volts 25C*5 -- 2.10 2.60 Volts IC = 1800A, VGE = 15V, Tj = 125C*5 -- 2.30 -- Volts Collector-Emitter Saturation Voltage VCE(sat) (Chip) IC = 1800A, VGE = 15V, Tj = IC = 1800A, VGE = 15V, Tj = Input Capacitance Cies Output Capacitance Coes Reverse Transfer Capacitance Cres Gate Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Emitter-Collector Voltage Emitter-Collector Voltage QG VCE = 10V, VGE = 0V VCC = 1000V, IC = 1800A, VGE = 15V td(on) -- 2.35 -- Volts -- -- 460 nF -- -- 48 nF -- -- 8.0 nF -- 8400 -- nC -- -- 1100 ns tr VCC = 1000V, IC = 1800A, VGE = 15V, -- -- 200 ns td(off) RG = 0, Inductive Load -- -- 950 ns -- -- 500 ns VEC*1 tf IE = 1800A, VGE = 0V, Tj = 25C*5 -- 2.00 2.50 Volts (Terminal) IE = 1800A, VGE = 0V, Tj = 125C*5 -- 2.10 -- Volts IE = 1800A, VGE = 0V, Tj = 150C*5 -- 2.05 -- Volts VEC*1 IE = 1800A, VGE = 0V, Tj = 25C*5 -- 1.90 2.40 Volts (Chip) IE = 1800A, VGE = 0V, Tj = 125C*5 -- 2.00 -- Volts 150C*5 IE = 1800A, VGE = 0V, Tj = Reverse Recovery Time 150C*5 trr*1 -- 1.95 -- Volts VCC = 1000V, IE = 1800A, VGE = 15V -- -- 350 ns RG = 0, Inductive Load -- 80 -- C VCC = 1000V, IC = IE = 1800A, -- 722.8 -- mJ *1 Reverse Recovery Charge Qrr Turn-on Switching Energy per Pulse Eon Turn-off Switching Energy per Pulse Eoff VGE = 15V, RG = 0, -- 509.5 -- mJ Reverse Recovery Energy per Pulse Err*1 Tj = 150C, Inductive Load -- 509.2 -- mJ Main Terminals-Chip, -- 0.11 -- m -- 1.1 -- Internal Lead Resistance RCC' + EE' Per Switch,TC = 25C*4 Internal Gate Resistance rg Per Switch *1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (FWDi). *4 Case temperature (TC) and heatsink temperature (Ts) are measured on the surface (mounting side) of the baseplate and the heatsink side just under the chips. Refer to the figure on page 1 for chip location. The heatsink thermal resistance should be measured just under the chips. *5 Pulse width and repetition rate should be such as to cause negligible temperature rise. 6/14 Rev. 4 3 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM1800DY-34S Dual Half-Bridge IGBT HVIGBT Module 1800 Amperes/1700 Volts Electrical Characteristics, Tj = 25C unless otherwise specified (continued) NTC Thermistor Part Characteristics Symbol Zero Power Resistance R25 Deviation of Resistance R/R B Constant B(25/50) Test Conditions TC = Min. Typ. 25C*4 TC = 100C, R100 = 493*4 Units 4.85 5.00 5.15 k -7.3 -- +7.8 % -- 3375 -- K P25 TC = 25C*4 -- -- 10 mW Thermal Resistance, Junction to Case*4 Rth(j-c)Q Per IGBT -- -- 13 K/kW Case*4 Rth(j-c)D Per FWDi -- -- 22 K/kW Rth(c-f) Thermal Grease Applied -- 3.1 -- K/kW 31 35 40 in-lb Power Dissipation Approximate by Equation*6 Max. Thermal Resistance Characteristics Thermal Resistance, Junction to Contact Thermal Resistance, Case to Heatsink*4 (Per 1 Module)*7 Mechanical Characteristics Mounting Torque Mt Ms Creepage Distance ds Clearance da Weight m Flatness of Baseplate ec Main Terminals, M6 Screw Auxiliary Terminals, M4 Screw 12 13 15 in-lb Mounting, M5 Screw 22 27 31 in-lb Terminal to Terminal 16 -- -- mm Terminal to Baseplate 25 -- -- mm Terminal to Terminal 16 -- -- mm Terminal to Baseplate 24 -- -- mm -- 2 -- kg On Centerline X, Y*8 -50 -- +100 m Recommended Operating Conditions, Ta = 25C 0 -- 2 *6 B(25/50) = In( 0 Per Switch 24.0 RG *4 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface (mounting side) of the baseplate and the heatsink side just under the chips. Refer to the figure to the right for chip location. The heatsink thermal resistance should be measured just under the chips. 52.2 External Gate Resistance 82.0 Volts 110.2 Volts 16.5 140.0 1200 15.0 168.2 1000 13.5 198.0 -- Applied Across G1-Es1 / G2-Es2 226.2 Applied Across C1-E2 VGE(on) 256.0 VCC Gate-Emitter Drive Voltage 284.2 DC Supply Voltage R25 1 1 )/( - ) R50 T25 T50 R25; Resistance at Absolute Temperature T25 [K]; T25 = 25 [C] + 273.15 = 298.15 [K] R50; Resistance at Absolute Temperature T50 [K]; T50 = 50 [C] + 273.15 = 323.15 [K] *7 Typical value is measured by using thermally conductive grease of = 0.9 [W/(m * K)]. *8 Baseplate (mounting side) flatness measurement points (X, Y) are shown in the figure below. Tr2 Di2 Di1 Tr1 Tr2 Tr2 Di2 Tr1 Tr2 Di1 Di2 Di1 Tr1 Tr2 Di2 Tr1 Tr2 Di1 Di2 Di1 Tr1 Tr2 Di2 Tr1 Tr2 Di1 Di2 Di1 Tr1 Tr2 Di2 101.2 96.2 87.7 82.7 Di1 54.2 Tr1 40.7 Tr2 Di1 Di2 Tr1 Di1 Tr1 Di2 RECOMMENDED AREA FOR EVEN APPLICATION OF THERMALLY CONDUCTIVE GREASE (PER BASEPLATE) 0 0 25.7 54.0 46.5 83.7 112.0 141.7 170.0 199.7 X 228.0 ec 257.7 Y 286.0 - CONCAVE 45.7 24.5 Th + CONVEX 59.2 LABEL SIDE Each mark points to the center position of each chip. MOUNTING SIDE MOUNTING SIDE MOUNTING SIDE 4 Tr1 / Tr2: IGBT Di1 / Di2: FWDi Th: NTC Thermistor - CONCAVE + CONVEX 6/14 Rev. 4 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM1800DY-34S Dual Half-Bridge IGBT HVIGBT Module 1800 Amperes/1700 Volts COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) 4000 3.5 12 13.5 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 3000 (Chip) VGE = 20V 15 11 2500 2000 10 1500 1000 9 500 0 Tj = 25C 0 2 4 6 8 2.5 2.0 1.5 1.0 0.5 (Chip) 0 600 1200 1800 2400 3200 3600 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) COLLECTOR CURRENT, IC, (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 104 10 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) VGE = 15V Tj = 25C Tj = 125C Tj = 150C 3.0 0 10 Tj = 25C EMITTER CURRENT, IE, (AMPERES) COLLECTOR CURRENT, IC, (AMPERES) 3500 8 IC = 3600A 6 IC = 1800A 4 IC = 720A 2 Tj = 25C Tj = 125C Tj = 150C 103 102 (Chip) 0 6 8 (Chip) 10 12 14 16 18 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 6/14 Rev. 4 20 101 0 0.5 1.0 1.5 2.0 2.5 3.0 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) 5 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM1800DY-34S Dual Half-Bridge IGBT HVIGBT Module 1800 Amperes/1700 Volts HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) CAPACITANCE VS. VCE (TYPICAL) 104 103 102 SWITCHING TIME, (ns) CAPACITANCE, Cies, Coes, Cres, (nF) Cies Coes 101 Cres 100 td(off) 103 td(on) tf 102 VCC = 1000V VGE = 15V RG = 0 Tj = 125C Inductive Load tr VGE = 0V 10-1 10-1 100 101 101 102 102 COLLECTOR CURRENT, IC, (AMPERES) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) SWITCHING TIME VS. GATE RESISTANCE (TYPICAL) 104 td(on) tf 102 VCC = 1000V VGE = 15V RG = 0 Tj = 150C Inductive Load 101 102 103 COLLECTOR CURRENT, IC, (AMPERES) 104 SWITCHING TIME, (ns) SWITCHING TIME, (ns) td(off) tr 6 104 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 104 103 103 VCC = 1000V VGE = 15V IC = 1800A Tj = 125C Inductive Load td(on) td(off) 103 tf tr 102 10-1 100 101 EXTERNAL GATE RESISTANCE, RG, () 6/14 Rev. 4 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM1800DY-34S Dual Half-Bridge IGBT HVIGBT Module 1800 Amperes/1700 Volts SWITCHING TIME VS. GATE RESISTANCE (TYPICAL) VCC = 1000V VGE = 15V IC = 1800A Tj = 150C Inductive Load 104 REVERSE RECOVERY, Irr (A), trr (ns) SWITCHING TIME, (ns) 104 REVERSE RECOVERY CHARACTERISTICS (TYPICAL) td(on) td(off) 103 tf tr 102 10-1 Irr trr 103 EXTERNAL GATE RESISTANCE, RG, () EMITTER CURRENT, IE, (AMPERES) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) GATE CHARGE VS. VGE 20 VCC = 1000V VGE = 15V RG = 0 Tj = 150C Inductive Load 103 102 102 Irr trr 103 EMITTER CURRENT, IE, (AMPERES) 6/14 Rev. 4 103 102 102 101 GATE-EMITTER VOLTAGE, VGE, (VOLTS) REVERSE RECOVERY, Irr (A), trr (ns) 104 100 VCC = 1000V VGE = 15V RG = 0 Tj = 125C Inductive Load 104 104 IC = 1800A VCC = 1000V 15 10 5 0 0 2000 4000 6000 8000 10000 12000 GATE CHARGE, QG, (nC) 7 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM1800DY-34S Dual Half-Bridge IGBT HVIGBT Module 1800 Amperes/1700 Volts HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 101 102 104 VCC = 1000V VGE = 15V 103 RG = 0 Tj = 150C Inductive Load, Per Pulse 102 Eon Eoff Err 101 102 103 COLLECTOR CURRENT, IC, (AMPERES) EMITTER CURRENT, IE, (AMPERES) COLLECTOR CURRENT, IC, (AMPERES) EMITTER CURRENT, IE, (AMPERES) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 104 VCC = 1000V VGE = 15V IC = 1800A Tj = 125C Inductive Load, Per Pulse 103 102 10-1 Eon Eoff Err 100 EXTERNAL GATE RESISTANCE, RG, () 8 102 104 SWITCHING ENERGY, Eon, Eoff, (mJ) REVERSE RECIVERY ENERGY, Err, (mJ) SWITCHING ENERGY, Eon, Eoff, (mJ) REVERSE RECIVERY ENERGY, Err, (mJ) 103 SWITCHING ENERGY, Eon, Eoff, (mJ) Eon Eoff Err REVERSE RECIVERY ENERGY, Err, (mJ) SWITCHING ENERGY, Eon, Eoff, (mJ) VCC = 1000V VGE = 15V 103 RG = 0 Tj = 125C Inductive Load, Per Pulse 102 104 103 104 101 REVERSE RECIVERY ENERGY, Err, (mJ) 103 HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 102 104 VCC = 1000V VGE = 15V IC = 1800A Tj = 150C Inductive Load, Per Pulse 103 102 10-1 Eon Eoff Err 100 101 EXTERNAL GATE RESISTANCE, RG, () 6/14 Rev. 4 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (MAXIMUM) TEMPERATURE CHARACTERISTICS (NTC THERMISTOR PART - TYPICAL) 102 100 Single Pulse TC = 25C Per Unit Base = Rth(j-c) = 13 K/k/W (IGBT) Rth(j-c) = 22 K/k/W (FWDi) 10-1 10-2 10-3 10-2 10-1 TIME, (s) 6/14 Rev. 4 RESISTANCE, R (k) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c') Zth = Rth * (NORMALIZED VALUE) CM1800DY-34S Dual Half-Bridge IGBT HVIGBT Module 1800 Amperes/1700 Volts 100 101 101 100 10-1 -50 -25 0 25 50 75 100 125 TEMPERATURE, T (C) 9