1. Product profile
1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small
DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench
MOSFET technology.
1.2 Features and benefits
Very fast switching
Trench MOSFET technology
ESD protection up to 2 kV
Logic-level compatible
Ultra thin package profile with
0.37 mm height
1.3 Applications
Relay driver
High-speed line driver
Low-side loadswitch
Switching circuits
1.4 Quick reference data
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 1 cm2.
2N7002BKMB
60 V, single N-channel Trench MOSFET
Rev. 1 — 11 May 2012 Product data sheet
SOT883B
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
VDS drain-source voltage Tj=25°C --60V
VGS gate-source voltage -20 - 20 V
IDdrain current VGS =10V; T
amb =25°C [1] - - 450 mA
Static characteristics
RDSon drain-source on-state
resistance VGS =10V; I
D=450mA; T
j=25°C - 1 1.6 Ω
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Product data sheet Rev. 1 — 11 May 2012 2 of 15
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60 V, single N-channel Trench MOSFET
2. Pinning information
3. Ordering information
4. Marking
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic sym bol
1 G gate
SOT883B (DFN1006B-3)
2Ssource
3 D drain
3
1
2
Transparent
top view
017aaa255
G
D
S
Table 3. Ordering informatio n
Type number Package
Name Description Version
2N7002BKMB DFN1006B-3 Leadless ultra small plastic package; 3 solder lands;
body 1.0 × 0.6 × 0.37 mm SOT883B
Table 4. Marking codes
Type number Marking code
2N7002BKMB 0000 0001
Fig 1. DFN1006B-3 (SOT883B) binary marking code description
MARKING CODE
(EXAMPLE)
PIN 1 INDICATION READING DIRECTION
READING DIRECTION
READING EXAMPLE:
0111
1011
006aac673
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Product data sheet Rev. 1 — 11 May 2012 3 of 15
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60 V, single N-channel Trench MOSFET
5. Limiting values
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 1 cm2.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[3] Measured between all pins.
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage Tj=25°C - 60 V
VGS gate-source voltage -20 20 V
IDdrain current VGS =10V; T
amb =25°C [1] - 450 mA
VGS =10V; T
amb = 100 °C [1] - 220 mA
IDM peak drain current Tamb = 25 °C; single pulse; tp≤10 µs - 1.8 A
Ptot total power dissipation Tamb =25°C [2] - 360 mW
[1] - 715 mW
Tsp = 25 °C - 2700 mW
Tjjunction temperature -55 150 °C
Tamb ambient temperature -55 150 °C
Tstg storage temperature -65 150 °C
Source-drain diode
ISsource current Tamb =25°C [1] - 450 mA
ESD maximum rating
VESD electrostatic discharge voltage HBM [3] - 2000 V
Fig 2. Normalized total power dissipation as a
function of junction temp era tu re Fig 3. Normalized continuous drain current as a
function of junction temp erat ure
Tj (°C)
-75 17512525 75-25
001aao121
40
80
120
Pder
(%)
0
Tj (°C)
-75 17512525 75-25
001aao122
40
80
120
Ider
(%)
0
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Product data sheet Rev. 1 — 11 May 2012 4 of 15
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60 V, single N-channel Trench MOSFET
6. Thermal characteristics
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.
IDM is single pulse
(1) tp = 1 ms
(2) DC; Tsp = 25 °C
(3) tp = 10 ms
(4) tp = 100 ms
(5) DC; Tamb = 25 °C; drain mounting pad 1 cm2
Fig 4. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-source
voltage
aaa-002590
10
ID
(A)
10-2
VDS (V)
10-1 102
101
1
10-1
limit RDSon = VDS / ID
(1)
(4)
(5)
(3)
(2)
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
Rth(j-a) thermal resistance
from junction to
ambient
in free air [1] - 305 350 K/W
[2] - 150 175 K/W
Rth(j-sp) thermal resistance
from junction to solder
point
--40K/W
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Product data sheet Rev. 1 — 11 May 2012 5 of 15
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60 V, single N-channel Trench MOSFET
FR4 PCB, standard footprint
Fig 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
FR4 PCB, mounting pad for drain 1 cm2
Fig 6. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
017aaa109
t
p
(s)
10
−3
10
2
10
3
10110
−2
10
−1
10
2
10
3
Z
th(j-a)
(K/W)
10
duty cycle = 1
0.75
0.5 0.33
0.25 0.2
0.05
0.02
0.01
0
0.1
017aaa110
t
p
(s)
10
−3
10
2
10
3
10110
−2
10
−1
10
2
10
3
Z
th(j-a)
(K/W)
10
duty cycle = 1
0.75
0.5 0.33
0.25 0.2
0
0.1
0.02
0.01
0.05
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Product data sheet Rev. 1 — 11 May 2012 6 of 15
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60 V, single N-channel Trench MOSFET
7. Characteristics
Table 7. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
V(BR)DSS drain-source
breakdown voltage ID=10µA; V
GS =0V; T
j=25°C 60--V
VGSth gate-source threshold
voltage ID=250µA; V
DS =V
GS; Tj= 25 °C 1.1 1.6 2.1 V
IDSS drain leakage current VDS =60V; V
GS =0V; T
j=25°C --1µA
VDS =60V; V
GS =0V; T
j=150°C --10µA
IGSS gate leakage current VGS =-20V; V
DS =0V; T
j=25°C --10µA
VGS =20V; V
DS =0V; T
j=25°C --10µA
RDSon drain-source on-state
resistance VGS =10V; I
D=450mA; T
j=25°C - 1 1.6 Ω
VGS =10V; I
D=450A; T
j=150°C - 2.2 3.5 Ω
VGS =5V; I
D=50mA; T
j=25°C - 1.3 2 Ω
gfs forward
transconductance VDS =10V; I
D= 200 mA; Tj= 25 °C - 550 - mS
Dynamic characteristics
QG(tot) total gate charge VDS =30V; I
D= 300 mA; VGS =4.5V;
Tj=25°C -0.50.6nC
QGS gate-source charge - 0.2 - nC
QGD gate-drain charge - 0.1 - nC
Ciss input capacitance VDS =10V; f=1MHz; V
GS =0V;
Tj=25°C - 3350pF
Coss output capacitance - 7 - pF
Crss reverse transfer
capacitance -4-pF
td(on) turn-on delay time VDS =50V; R
L= 250 Ω; VGS =10V;
RG(ext) =6Ω; Tj=25°C - 5 10 ns
trrise time - 6 - ns
td(off) turn-off delay time - 12 24 ns
tffall time -7-ns
Source-drain diode
VSD source-drain voltage IS=115mA; V
GS =0V; T
j= 25 °C 0.47 0.75 1.1 V
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Product data sheet Rev. 1 — 11 May 2012 7 of 15
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60 V, single N-channel Trench MOSFET
Tj = 25 °C Tj = 25 °C; VDS = 5 V
(1) minimum values
(2) typical values
(3) maximum values
Fig 7. Output characteristic s: drain current as a
function of drain-source voltage; typical values Fig 8. Subthreshold drain current as a function of
gate-source voltage
Tj = 25 °C
(1) VGS = 3.25 V
(2) VGS = 3.5 V
(3) VGS = 4 V
(4) VGS = 5 V
(5) VGS = 10 V
ID = 500 mA
(1) Tj = 150 °C
(2) Tj = 25 °C
Fig 9. Drain-source on-state resistance as a function
of drain current; typical values Fig 10. Drain-source on-state resistance as a function
of gate-source voltage; typical values
VDS (V)
0.0 4.03.01.0 2.0
017aaa039
0.4
0.5
0.3
0.2
0.1
0.6
0.7
ID
(A)
0.0
3.5 V
VGS = 4.0 V
3.0 V
2.75 V
2.5 V
3.25 V
017aaa040
V
GS
(V)
0.0 3.02.01.0
10
−4
10
−5
10
−3
I
D
(A)
10
−6
(2)(1) (3)
ID (A)
0.0 1.00.80.4 0.60.2
017aaa041
2.0
4.0
6.0
RDSon
(Ω)
0.0
(1)
(2)
(3)
(4)
(5)
VGS (V)
0.0 10.08.04.0 6.02.0
017aaa042
2.0
4.0
6.0
RDSon
(Ω)
0.0
(1)
(2)
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60 V, single N-channel Trench MOSFET
VDS > ID × RDSon
(1) Tj = 25 °C
(2) Tj = 150 °C
Fig 11. Transfer characteristics: drain current as a
function of gate-source voltage; typical values Fig 12. Normalized drain-source on-state resistance as
a function of junctio n temperature; typical
values
ID = 0.25 A; VDS = VGS
(1) maximum values
(2) typical values
(3) minimum values
f = 1 MHz; VGS = 0 V
(1) Ciss
(2) Coss
(3) Crss
Fig 13. Gate-source threshold voltage as a function of
junction temperature Fig 14. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
VGS (V)
0.0 5.04.02.0 3.01.0
017aaa043
0.4
0.6
0.2
0.8
1.0
ID
(A)
0.0
(1) (2)
Tj (°C)
-60 180120060
aaa-002591
1.2
0.6
1.8
2.4
a
0.0
Tj (°C)
-60 180120060
aaa-002592
1.0
2.0
3.0
VGS(th)
(V)
0.0
(2)
(1)
(3)
017aaa046
VDS (V)
10−1102
101
10
102
C
(pF)
1
(2)
(1)
(3)
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60 V, single N-channel Trench MOSFET
ID = 300 mA; VDS = 30 V; Tj = 25 °C
Fig 15. Gate-source voltag e as a function of gate
charge; typical values Fig 16. Gate charge waveform definitions
VGS = 0 V
(1) Tj = 150 °C
(2) Tj = 25 °C
Fig 17. Source current as a functio n of so urce-drain voltage; typical values
QG (nC)
0.0 0.80.60.2 0.4
017aaa047
2.0
3.0
1.0
4.0
5.0
VGS
(V)
0.0
003aaa508
VGS
VGS(th)
QGS1 QGS2
QGD
VDS
QG(tot)
ID
QGS
VGS(pl)
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60 V, single N-channel Trench MOSFET
8. Test information
9. Package outline
Fig 18. Duty cycle definition
t1
t2
P
t
006aaa812
duty cycle δ =
t1
t2
Fig 19. Package outline SOT883B (DFN1006B-3)
11-11-02Dimensions in mm
2
3
0.55
0.47
0.30
0.22
1
0.40
0.34
0.30
0.22
0.20
0.12
0.65
0.04 max
0.35
0.65
0.55
1.05
0.95
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Product data sheet Rev. 1 — 11 May 2012 11 of 15
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60 V, single N-channel Trench MOSFET
10. Soldering
Fig 20. Reflow soldering footprint for SOT883B (DFN1006B-3)
1.3
0.3
0.6 0.7
0.4
0.9
0.3
(2x)
0.4
(2x)
0.25
(2x)
R0.05 (8x)
0.7
Footprint information for reflow soldering SOT883B
sot883b_fr
occupied area
solder land
solder resist
solder land plus solder paste
solder paste deposit
Dimensions in mm
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60 V, single N-channel Trench MOSFET
11. Revision history
Table 8. Revision history
Document ID Release date Data sheet status Change notice Supersedes
2N7002BKMB v.1 20120511 Product data sheet - -
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12. Legal information
12.1 Data sheet status
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term 'short data sheet' is explained in section "Definitions".
[3] The product status of device(s) described in this doc ument may have changed since this document was published and may differ in case of multiple devices. The latest product
status information is available on the Internet at URLhttp://www.nxp.com.
12.2 Definitions
Preview — The document is a preview version only. The document is still
subject to formal approval, which may result in modificati ons or additions.
NXP Semiconductors does not give any representat ions or warranties as to
the accuracy or completeness of informati on included herein and shall have
no liability for the consequences of use of such info rmation.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or comple teness of
information included herein and shall have no liab ility for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and tit le. A short data sh eet is intended
for quick reference only and shou ld not be rel ied u pon to cont ain det ailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short dat a sheet, the
full data sheet shall pre vail.
Product specifica t ion — The information and data provided in a Product
data sheet shall define the specification of the product as agr eed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to off er functions and qualities beyond those described in the
Product data sheet.
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Limited warranty and liability — Information in this d ocument is be lieved to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information. NXP Se miconductors takes no
responsibility for the content in this document if provided by an inf ormation
source outside of NXP Semiconductors.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
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Notwithstanding any damages that customer might incur for any reason
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customer for the products described herein shall be limited in accordance
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Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
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to the publication hereof.
Suitability for use — NXP Semiconductors product s are not designed,
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malfunction of an NXP Semiconductors pro duct can reasonably be expected
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Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty tha t such application s will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and ope ration of their applications
and products using NXP Semiconductors product s, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suit able and fit for the custome r’s applications and
products planned, as well as fo r the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with t heir
applications and products.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessa ry
testing for th e customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanent ly and irreversibly affect
the quality and reliability of the device.
Document status[1] [2] Product status[3] Definition
Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [shor t] data sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.
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Product data sheet Rev. 1 — 11 May 2012 14 of 15
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60 V, single N-channel Trench MOSFET
Terms and conditions of commercial sale — NXP Semiconductors
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agreed in a valid written individual agreement. In case an individual
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applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
No offer to sell or license — Nothing in this document ma y be interpret ed or
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Non-automotive qualified products — Unless this data sheet expressly
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Semiconductors accepts no liability for inclusion and/or use of
non-automotive qualified products in automotive equipment or applicati ons.
In the event that customer uses the product for design-in and use in
automotive applications to automot ive specifications and standard s, customer
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12.4 Trademarks
Notice: All referenced b rands, produc t names, service names and trademarks
are the property of their respect i ve ow ners.
Adelante,Bitport,Bitsound,CoolFlux,CoReUse,DESFire,EZ-HV,FabKey,G
reenChip,HiPerSmart,HITAG,I²C-bus
logo,ICODE,I-CODE,ITEC,Labelution,MIFARE,MIFARE Plus,MIFARE
Ultralight,MoReUse,QLPAK,Silicon
Tuner,SiliconMAX,SmartXA,STARplug,TOPFET,TrenchMOS,TriMedia
andUCODE — are trademarks of NXP B.V.
HD Radio andHD Radio logo — are trademarks of iBiquity Digital
Corporation.
13. Contact information
For more information, please visit:http://www.nxp.com
For sales office addresses, please send an email to:salesaddresses@nxp.com
NXP Semiconductors 2N7002BKMB
60 V, single N-channel Trench MOSFET
© NXP B.V. 2012. All rights reserved.
For more information, please visit: http://www.nxp.co m
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 11 May 2012
Document identifier: 2N7002BKMB
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
14. Contents
1 Product profile. . . . . . . . . . . . . . . . . . . . . . . . . . .1
1.1 General description . . . . . . . . . . . . . . . . . . . . . .1
1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . .1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1
1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . .1
2 Pinning information. . . . . . . . . . . . . . . . . . . . . . .2
3 Ordering information. . . . . . . . . . . . . . . . . . . . . .2
4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2
5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3
6 Thermal characteristics . . . . . . . . . . . . . . . . . . .4
7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . .6
8 Test information. . . . . . . . . . . . . . . . . . . . . . . . .10
9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . .10
10 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11
11 Revision history. . . . . . . . . . . . . . . . . . . . . . . . .12
12 Legal information. . . . . . . . . . . . . . . . . . . . . . . .13
12.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . .13
12.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
12.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . .13
12.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .14
13 Contact information. . . . . . . . . . . . . . . . . . . . . .14