AOD7B65M3
650V, 7A Alpha IGBT
TM
With soft and fast recovery anti-parallel diode
General Description Product Summary
V
CE
I
C
(T
C
=100°C) 7A
V
CE(sat)
(T
J
=25°C) 1.87V
Applications
• Motor Drives
• Home appliance applications such as refrigerators
and washing machines
• Fan, Pumps, Vacuum Cleaner
• Other Hard Switching Applications
• Latest AlphaIGBT (α IGBT) technology
• 650V breakdown voltage
• Very fast and soft recovery freewheeling diode
• High efficient turn-on di/dt controllability
• Low VCE(SAT) enables high efficiencies
• Low turn-off switching loss and softness
• Very good EMI behavior
• High short-circuit ruggedness
650V
E
C
G
C
Top View
TO-252
DPAK
Bottom View
G
C
Symbol
V
CE
V
GE
I
CM
I
LM
Diode Pulsed Current, Limited by T
Jmax
I
FM
t
SC
T
J
, T
STG
T
L
Symbol
R
θ
JA
R
θ
JC
R
θ
JC
1) Allowed number of short circuits: <1000; time between short circuits: >1s.
Minimum Order Quantity
2500
Package Type
TO252
Form
Tape & Reel
Continuous Diode
Forward Current
T
C
=25°C I
F
10 A
T
C
=100°C
Continuous Collector
Current
T
C
=25°C
5
14
7
±30 V
A
I
C
Turn off SOA, V
CE
≤ 650V, Limited by T
Jmax
Pulsed Collector Current, Limited by T
Jmax
Gate-Emitter Voltage
T
C
=100°C
A
A
Parameter
21 A
21
Maximum Junction-to-Ambient
5µs
T
C
=100°C
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds °C
Power Dissipation P
D
Short circuit withstanding time
1)
V
GE
= 15V, V
CC
≤ 400V, T
J
≤ 150°C
Junction and Storage Temperature Range
T
C
=25°C
Thermal Characteristics
Maximum Diode Junction-to-Case
°C/W1.8Maximum IGBT Junction-to-Case
V
UnitsParameter
A
=25°C unless otherwise noted
AOD7B65M3
Collector-Emitter Voltage 650
Orderable Part Number
AOD7B65M3
°C/W5.5
300
-55 to 150
69
°C/W55
28
°C
21
AOD7B65M3
W
Units
G
E
E
AOD7B65M3
G
E
Rev.1.0: February 2016 www.aosmd.com Page 1 of 9
Symbol Min Typ Max Units
BV
CES
Collector-Emitter Breakdown Voltage 650 - - V
T
J
=25°C - 1.87 2.35
T
J
=125°C - 2.34 -
T
J
=150°C - 2.47 -
T
J
=25°C - 2.1 2.6
T
J
=125°C - 2.04 -
T
J
=150°C - 2 -
V
GE(th)
Gate-Emitter Threshold Voltage - 5.1 - V
T
J
=25°C - - 10
T
J
=125°C - - 500
T
J
=150°C - - 1000
I
GES
Gate-Emitter leakage current - - ±100 nA
g
FS
- 3.6 - S
C
ies
- 348 - pF
C
oes
- 36 - pF
C
res
- 13 - pF
Q
g
- 14 - nC
Q
ge
- 3.2 - nC
Q
gc
- 6.7 - nC
I
C(SC)
- 30 - A
R
g
- 6 - Ω
t
D(on)
- 6 - ns
t
r
- 14 - ns
t
D(off)
- 79 - ns
t
f
- 20 - ns
E
on
- 0.108 - mJ
E
off
- 0.099 - mJ
E
total
- 0.208 - mJ
t
rr
- 212 - ns
Q
rr
- 0.29 - µC
I
rm
- 3 - A
t
D(on)
- 6 - ns
t
r
- 15 - ns
t
D(off)
- 94 - ns
t
f
- 42 - ns
E
on
- 0.113 - mJ
E
off
- 0.16 - mJ
E
total
- 0.273 - mJ
t
rr
- 273 - ns
Q
rr
- 0.45 - µC
I
rm
- 3.5 - A
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
T
J
=150°C
I
F
=7A, dI/dt=200A/µs, V
CC
=400V
Diode Reverse Recovery Charge
Diode Peak Reverse Recovery Current
Turn-On DelayTime
T
J
=150°C
V
GE
=15V, V
CC
=400V, I
C
=7A,
R
G
=43Ω
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Turn-On Energy
Diode Reverse Recovery Time
Turn-Off Energy
Total Switching Energy
Turn-Off Energy
Turn-On Rise Time
Turn-On DelayTime
SWITCHING PARAMETERS, (Load Inductive, T
J
=150°C)
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
Diode Peak Reverse Recovery Current
T
J
=25°C
I
F
=7A, dI/dt=200A/µs, V
CC
=400V
Turn-Off Delay Time T
J
=25°C
V
GE
=15V, V
CC
=400V, I
C
=7A,
R
G
=43Ω
Total Switching Energy
Turn-Off Fall Time
Turn-On Energy
Gate to Collector Charge
Gate to Emitter Charge V
GE
=15V, V
CC
=520V, I
C
=7A
SWITCHING PARAMETERS, (Load Inductive, T
J
=25°C)
Short circuit collector current V
GE
=15V, V
CC
=400V,
t
sc
≤5us, T
J
≤150°C
Total Gate Charge
Gate resistance V
GE
=0V, V
CC
=0V, f=1MHz
Electrical Characteristics (T
J
=25°C unless otherwise noted)
STATIC PARAMETERS
Parameter Conditions
Reverse Transfer Capacitance
V
GE
=0V, V
CC
=25V, f=1MHz
V
CE
=20V, I
C
=7A
V
CE
=0V, V
GE
=±30V
Forward Transconductance
V
CE(sat)
I
C
=1mA, V
GE
=0V, T
J
=25°C
V
GE
=15V, I
C
=7A V
V
CE
=650V, V
GE
=0V
V
GE
=0V, I
C
=7A V
Collector-Emitter Saturation Voltage
Output Capacitance
Input Capacitance
I
CES
Zero Gate Voltage Collector Current
V
F
Diode Forward Voltage
DYNAMIC PARAMETERS
µA
V
CE
=5V, I
C
=1mA
Rev.1.0: February 2016 www.aosmd.com Page 2 of 9
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
3
6
9
12
15
012345
IF(A)
VF(V)
Figure 4: Diode Characteristic
25°C
150°C
-40°C
0
5
10
15
20
25
01234567
IC(A)
VCE(V)
Figure 1: Output Characteristic
(Tj=25°C )
9
V
20V
17
V
15V
11V
VGE= 7V
13V
0
3
6
9
12
15
3 6 9 12 15
IC (A)
VGE(V)
Figure 3: Transfer Characteristic
150°C
25°C
-40°C
VCE=20V
0
5
10
15
20
25
01234567
IC(A)
VCE(V)
Figure 2: Output Characteristic
(Tj=150°C )
V
GE
=7V
9
V
20V
17V
15V
11V
13V
0
1
2
3
4
5
6
0 25 50 75 100 125 150
VCE(sat)
(V)
Temperature (°C)
Figure 5: Collector-Emitter Saturation Voltage vs.
Junction Temperature
IC=14A
IC=3.5A
IC=7A
0
0.5
1
1.5
2
2.5
3
3.5
0 25 50 75 100 125 150
VSD (V)
Temperature (°C )
Figure 6: Diode Forward voltage vs. Junction
Temperature
14A
7A
IF=1A
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□
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
3
6
9
12
15
0 4 8 12 16 20
VGE(V)
Qg(nC)
Figure 7: Gate-Charge Characteristics
VCE=520V
IC=7A
0
20
40
60
80
100
25 50 75 100 125 150
Power Disspation
(W)
TCASE(°C)
Figure 10: Power Disspation as a Function of
Case
1
10
100
1000
10000
0 8 16 24 32 40
Capacitance (pF)
VCE(V)
Figure 8: Capacitance Characteristic
Cies
Cres
Coes
0
3
6
9
12
15
18
25 50 75 100 125 150
Current rating IC
(A)
TCASE(°C)
Figure 11: Current De-rating
1E-09
1E-08
1E-07
1E-06
1E-05
1E-04
1E-03
0 25 50 75 100 125 150
ICE(S) (A)
Temperature (°C )
Figure 12: Diode Reverse Leakage Current vs.
Junction Temperature
VCE=650V
VCE=520V
Rev.1.0: February 2016 www.aosmd.com Page 4 of 9
≤
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1
10
100
1000
10000
3 5 7 9 11 13 15
Switching Time (nS)
IC (A)
Figure 13: Switching Time vs. IC
(Tj=150°C,VGE=15V,VCE=400V,Rg=43Ω)
Td(off)
Tf
Td(on)
Tr
1
10
100
1000
10000
0 100 200 300 400 500
Switching Time (nS)
Rg(Ω)
Figure 14: Switching Time vs. Rg
(Tj=150°C,VGE=15V,VCE=400V,IC=7A)
Td(off)
Tf
Td(on)
Tr
1
10
100
1000
10000
25 50 75 100 125 150
Switching Time (nS)
TJ (°C)
Figure
15
: Switching Time vs.T
j
Td(off)
Tf
Td(on)
Tr
1
2
3
4
5
6
7
0 25 50 75 100 125 150
VGE(TH)(V)
TJ(°C)
Figure 16: V
vs. T
Figure
15
: Switching Time vs.T
j
(VGE=15V,VCE=400V,IC=7A,Rg=43Ω)
Figure 16: V
GE(TH)
vs. T
j
Rev.1.0: February 2016 www.aosmd.com Page 5 of 9
≤
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
3 5 7 9 11 13 15
SwitchIng Energy (mJ)
IC (A)
Figure 17: Switching Loss vs. IC
(Tj=150°C,VGE=15V,VCE=400V,Rg=43Ω)
Eoff
Eon
Etotal
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0 100 200 300 400 500
Switching Energy (mJ)
Rg(Ω)
Figure 18: Switching Loss vs. Rg
(Tj=150°C,VGE=15V,VCE=400V,IC=7A)
Eoff
Eon
Etotal
0
0.05
0.1
0.15
0.2
0.25
0.3
0.35
25 50 75 100 125 150
Switching Energy (mJ)
Eoff
Eon
Etotal
0
0.05
0.1
0.15
0.2
0.25
0.3
0.35
200
250
300
350
400
450
500
Switching Energ y (mJ)
Eoff
Eon
Etotal
25
50
75
100
125
150
TJ (°C)
Figure 19: Switching Loss vs. Tj
(VGE=15V,VCE=400V,IC=7A,Rg=43Ω)
200
250
300
350
400
450
500
VCE (V)
Figure 20: Switching Loss vs. VCE
(Tj=150°C,VGE=15V,IC=7A,Rg=43Ω)
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□
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
5
10
15
20
25
0
80
160
240
320
400
3 5 7 9 11 13 15
S
Trr (nS)
IF(A)
Figure 22: Diode Reverse Recovery Time and
Softness Factor vs. Conduction Current
(VGE=15V,VCE=400V,di/dt=200A/µs)
150°C
25°C
150°C
25°C
Trr
S
0
3
6
9
12
15
18
0
100
200
300
400
500
600
3 5 7 9 11 13 15
I
rm
(A)
Qrr (nC)
IF(A)
Figure 21: Diode Reverse Recovery Charge and
Peak Current vs. Conduction Current
(VGE=15V,VCE=400V,di/dt=200A/µs)
25°C
150°C
150°C
25°C
Qrr
Irm
0
5
10
15
20
25
0
80
160
240
320
400
50 100 150 200 250 300 350 400
S
Trr (nS)
di/dt (A/
µ
S)
25
°
C
150°C
25°C
150°C
Trr
S
0
3
6
9
12
15
18
0
100
200
300
400
500
600
50 100 150 200 250 300 350 400
I
rm
(A)
Qrr (nC)
di/dt (A/
µ
S)
150°C
25°C
150°C
25°C
Qrr
Irm
di/dt (A/
µ
S)
Figure 24: Diode Reverse Recovery Time and
Softness Factor vs. di/dt
(VGE=15V,VCE=400V,IF=7A)
di/dt (A/
µ
S)
Figure 23: Diode Reverse Recovery Charge and
Peak Current vs. di/dt
(VGE=15V,VCE=400V,IF=7A)
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□
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0.001
0.01
0.1
1
10
1E-06 1E-05 0.0001 0.001 0.01 0.1 1 10
ZθJC Normalized Transient
Thermal Resistance
Pulse Width (s)
Figure 25: Normalized Maximum Transient Thermal Impedance for IGBT
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=1.8°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Single Pulse
Ton
T
PDM
0.001
0.01
0.1
1
10
1E-06 1E-05 0.0001 0.001 0.01 0.1 1 10
ZθJC Normalized Transient
Thermal Resistance
Pulse Width (s)
Figure 26: Normalized Maximum Transient Thermal Impedance for Diode
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=5.5°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Single Pulse Ton
T
PDM
Rev.1.0: February 2016 www.aosmd.com Page 8 of 9
Figure A: Gate Charge Test Circuit & Waveforms
Figure B: Inductive Switching Test Circuit & Waveforms
Figure C: Diode Recovery Test Circuit & Waveforms
Rev.1.0: February 2016 www.aosmd.com Page 9 of 9