4-96
File Number
2387.5
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
PSPICE® is a registered trademark of MicroSim Corporation.
http://www.intersil.com or 407-727-9207 |Copyright © Intersil Corporation 1999
RFD15P05, RFD15P05SM, RFP15P05
15A, 50V, 0.150 Ohm, P-Channel Power
MOSFETs
These are P-Channel power MOSFETs manufactured using
the MegaFET process. This process which uses feature
sizes approaching those of LSI integrated circuits, gives
optimum utilization of silicon, resulting in outstanding
performance. They were designed for use in applications
such as switching regulators, switching converters, motor
drivers, and relay drivers. These transistors can be operated
directly from integrated circuits.
Formerly developmental type TA09833.
Features
• 15A, 50V
•r
DS(ON) = 0.150Ω
• Temperature Compensating PSPICE® Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
Packaging
Ordering Information
PART NUMBER PACKAGE BRAND
RFD15P05 TO-251AA D15P05
RFD15P05SM TO-252AA D15P05
RFP15P05 TO-220AB RFP15P05
NOTE: When ordering, use the entire part number.Addthesuffix9Ato
obtain the TO-252AA variant in the tape and reel, i.e., RFD15P05SM9A.
D
G
S
JEDEC TO-220AB JEDEC TO-251AA
JEDEC TO-252AA
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
SOURCE
DRAIN
GATE
DRAIN
(FLANGE)
DRAIN
(FLANGE)
GATE
SOURCE
Data Sheet July 1999
4-97
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
RFD15P05, RFD15P05SM,
RFP15P05 UNITS
Drain Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS -50 V
Drain Gate Voltage (RG = 20KΩ) (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR -50 V
Gate Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS ±20 V
Drain Current Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
D
Pulsed (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IDM -15
Refer to Peak Current Curve A
Single Pulse Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS Refer to UIS Curve
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD80 W
Derate above 25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.533 W/oC
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ,T
STG -55 to 175 oC
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg 300
260
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ= 25oC to 150oC.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Drain to Source Breakdown Voltage BVDSS ID = 250µA, VGS = 0V (Figure 11) -50 - - V
Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 250µA -2.0 - -4.0 V
Zero Gate Voltage Drain Current IDSS VDS = Rated BVDSS ---1µA
VDS = 0.8 x Rated BVDSS, TC = 150oC--25µA
Gate to Source Leakage Current IGSS VGS = ±20V - - ±100 nA
Drain to Source On Resistance rDS(ON) ID = 15A, VGS = -10V (Figure 9) - - 0.150 Ω
Turn-On Time tON VDD = -25V, ID≈ 7.5A, RG = 12.5Ω,
RL = 3.3Ω, VGS = -10V
(Figures 16, 17)
- - 60 ns
Turn-On Delay Time tD(ON) -16 - ns
Rise Time tR-30 - ns
Turn-Off Delay Time tD(OFF) -50 - ns
Fall Time tF-20 - ns
Turn-Off Time tOFF - - 100 ns
Total Gate Charge QG(TOT) VGS = 0V to -20V VDD = -40V, ID = 15A,
RL = 2.67Ω,
IG(REF) = -0.65mA
(Figures 18, 19)
- - 150 nC
Gate Charge at -10V QG(-10) VGS = 0V to -10V - - 75 nC
Threshold Gate Charge QG(TH) VGS = 0V to -2V - - 3.5 nC
Input Capacitance CISS VDS = -25V, VGS = 0V
f = 1MHz (Figure 12) - 1150 - pF
Output Capacitance COSS - 300 - pF
Reverse Transfer Capacitance CRSS -56 - pF
Thermal Resistance Junction to Case RθJC TO-220AB, TO-251AA, TO-252AA - - 1.875 oC/W
Thermal Resistance Junction to Ambient RθJA TO-251AA, TO-252AA - - 100 oC/W
TO-220AB - - 62.5 oC/W
Source to Drain Diode Specifications
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Source to Drain Diode Voltage VSD ISD = -15A - - -1.5 V
Reverse Recovery Time tRR ISD = -15A, dISD/dt = -100A/µs - - 125 ns
NOTES:
2. Pulse test: pulse duration ≤ 300ms, duty cycle ≤ 2%.
3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).
RFD15P05, RFD15P05SM, RFP15P05
4-98
Typical Performance Curves
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA FIGURE 5. PEAK CURRENT CAPABILITY
TC, CASE TEMPERATURE (oC)
25 50 75 100 125 150 175
0
POWER DISSIPATION MULTIPLIER
0
0
0.2
0.4
0.6
0.8
1.0
1.2
-4
-8
025 50 75 100 125 150
ID, DRAIN CURRENT (A)
TC, CASE TEMPERATURE (oC)
-12
-16
175
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC x RθJC + TC
PDM
t1t2
0.01
0.1
1
2
THERMAL IMPEDANCE
ZθJC, NORMALIZED TRANSIENT
t1, RECTANGULAR PULSE DURATION (s)
10-5 10-3 10-2 10-1 100101
10-4
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
0.5
-100
-10
-1-1 -10 -100
VDS, DRAIN TO SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
OPERATION IN THIS
AREA MAY BE
LIMITED BY rDS(ON)
100µs
1ms
100ms
DC
10ms
TC = 25oC
TJ = MAX RATED
10-5 10-4 10-3 10-2 10-1 100101
-100
t, PULSE WIDTH (s)
IDM, PEAK CURRENT CAPABILITY (A)
VGS = -20V
VGS = -10V
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
-10
-200
FOR TEMPERATURES ABOVE 25oC
DERATE PEAK CURRENT
CAPABILITY AS FOLLOWS:
II
25
175 TC
–
150
----------------------
=
TC = 25oC
RFD15P05, RFD15P05SM, RFP15P05
4-99
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING CAPABILITY FIGURE 7. SATURATION CHARACTERISTICS
FIGURE 8. TRANSFER CHARACTERISTICS FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 10. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE FIGURE 11. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
Typical Performance Curves
(Continued)
-10
-50
-10.1 1 10 100
tAV, TIME IN AVALANCHE (ms)
IAS, AVALANCHE CURRENT (A)
STARTING TJ = 150oC
STARTING TJ = 25oC
If R = 0
tAV = (L/R) ln [(IAS*R) / (1.3 RATED BVDSS - VDD) + 1]
tAV = (L) (IAS) / (1.3RATED BVDSS - VDD)
If R ≠ 0
00 -1.5 -3.0 -4.5 -6.0 -7.5
ID, DRAIN CURRENT (A)
VDS, DRAIN TO SOURCE VOLTAGE (V)
VGS = -5V
VGS = -6V
VGS = -8V
VGS = -7V
VGS = -10V
-10
-20
-40
VGS = -4.5V
VGS = -20V
-30
PULSE DURATION = 80µs
TC = 25oC
DUTY CYCLE = 0.5% MAX
0-2 -4 -6 -8 -10
VGS, GATE TO SOURCE VOLTAGE (V)
IDS(ON), DRAIN TO SOURCE CURRENT (A)
0
VDD = -15V
PULSE DURATION = 250µs-55oC
175oC
25oC
-8
-16
-32
-24
-40
DUTY CYCLE = 0.5% MAX 2.0
1.5
1.0
0.5
0
-80 -40 0 40 80 120 160
TJ, JUNCTION TEMPERATURE (oC)
NORMALIZED DRAIN TO SOURCE
2.5
200
ON RESISTANCE
PULSE DURATION = 80µs
VGS = -10V, ID = -15A
DUTY CYCLE = 0.5% MAX
2.0
1.5
1.0
0.5
0
-80 -40 0 40 80 160120
TJ, JUNCTION TEMPERATURE (oC)
NORMALIZED GATE
200
THRESHOLD VOLTAGE
VGS = VDS
ID = -250µA
2.0
1.5
1.0
0.5
0-80 -40 0 40 80 120 160
NORMALIZED DRAIN TO SOURCE
BREAKDOWN VOLTAGE
TJ, JUNCTION TEMPERATURE (oC)
200
ID = -250µA
RFD15P05, RFD15P05SM, RFP15P05
4-100
FIGURE 12. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
NOTE: Refer to Intersil Application Notes AN7254 and AN7260
FIGURE 13. NORMALIZED SWITCHING WAVEFORMS FOR
CONSTANT GATE CURRENT
Test Circuits and Waveforms
FIGURE 14. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 15. UNCLAMPED ENERGY WAVEFORMS
FIGURE 16. SWITCHING TIME TEST CIRCUIT FIGURE 17. RESISTIVE SWITCHING WAVEFORMS
Typical Performance Curves
(Continued)
1400
1000
800
400
00-5 -10 -15 -20 -25
C, CAPACITANCE (pF)
VDS, DRAIN TO SOURCE VOLTAGE (V)
CISS
COSS
CRSS
200
600
1200
VGS = 0V, f = 1MHz
CISS = CGS + CGD
CRSS = CGD
COSS ≈ CDS + CGS
-50
-37.5
-25
-12.5
0
-10.0
-7.5
-5.0
-2.5
0.0
20 IG(REF)
IG(ACT) 80 IG(REF)
IG(ACT)
t, TIME (ms)
VDD = BVDSS VDD = BVDSS
RL = 3.33Ω
IG(REF) = -0.65mA
0.75 BVDSS
0.50 BVDSS
0.25 BVDSS
0.75 BVDSS
0.50 BVDSS
0.25 BVDSS
VDS, DRAIN TO SOURCE VOLTAGE (V)
VGS, GATE TO SOURCE VOLTAGE (V)
VGS = -10V
tP
0.01Ω
L
IAS
+
-
VDS
VDD
RG
DUT
VARY tP TO OBTAIN
REQUIRED PEAK IAS
0V
VGS
VDD
VDS
BVDSS
tP
IAS
tAV
0
VGS
RL
RG
DUT
+
-VDD
td(ON)
tr
90%
10%
VDS 90%
tf
td(OFF)
tOFF
90%
50%
50%
10%
PULSE WIDTH
VGS
tON
10%
0
0
RFD15P05, RFD15P05SM, RFP15P05
4-101
FIGURE 18. GATE CHARGE TEST CIRCUIT FIGURE 19. GATE CHARGE WAVEFORMS
Test Circuits and Waveforms
(Continued)
RL
VGS
+
-
VDS
VDD
DUT
Ig(REF)
VDD
Qg(TH)
VGS = -2V
Qg(-10)
VGS = -10V
Qg(TOT)
VGS = -20V
VDS
-VGS
Ig(REF)
0
0
RFD15P05, RFD15P05SM, RFP15P05
4-102
PSPICE Electrical Model
.SUBCKT RFP15P05 2 1 3 REV 9/06/94
CA 12 8 1.6e-9
CB 15 14 1.47e-9
CIN 6 8 1.09e-9
DBODY 5 7 DBDMOD
DBREAK 7 11 DBKMOD
DPLCAP 10 6 DPLCAPMOD
EBREAK 5 11 17 18 -73.0
EDS 14 8 5 8 1
EGS 13 8 6 8 1
ESG 5 10 8 6 1
EVTO 20 6 8 18 1
IT 8 17 1
LDRAIN 2 5 1e-9
LGATE 1 9 6.73e-9
LSOURCE 3 7 6.69e-9
MOS1 16 6 8 8 MOSMOD M = 0.99
MOS2 16 21 8 8 MOSMOD M = 0.01
RBREAK 17 18 RBKMOD 1
RDRAIN 50 16 RDSMOD 63.6e-3
RGATE 9 20 7.37
RIN 6 8 1e9
RSCL1 5 51 RSCLMOD 1e-6
RSCL2 5 50 1e3
RSOURCE 8 7 RDSMOD 46.5e-3
RVTO 18 19 RVTOMOD 1
S1A 6 12 13 8 S1AMOD
S1B 13 12 13 8 S1BMOD
S2A 6 15 14 13 S2AMOD
S2B 13 15 14 13 S2BMOD
VBAT 8 19 DC 1
VTO 21 6 -0.65
ESCL 51 50 VALUE = {(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)*1e6/35,4))}
.MODEL DBDMOD D (IS = 1.27e-13 RS = 1.62e-2 TRS1 = 1.35e-3 TRS2 = -4.33e-6 CJO = 1.25e-9 TT = 7.97e-8)
.MODEL DBKMOD D (RS = 2.54e-1 TRS1 = 4.54e-3 TRS2 = -1.12e-5)
.MODEL DPLCAPMOD D (CJO = 285e-12 IS = 1e-30 N = 10)
.MODEL MOSMOD PMOS (VTO = -3.78 KP = 6.97 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u)
.MODEL RBKMOD RES (TC1 = 9.15e-4 TC2 = -4.0e-7)
.MODEL RDSMOD RES (TC1 = 5.47e-3 TC2 = 1.37e-5)
.MODEL RSCLMOD RES (TC1 = 1.9e-3 TC2 = -7.5e-6)
.MODEL RVTOMOD RES (TC1 = -3.71e-3 TC2 = -2.41e-6)
.MODEL S1AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 3.65 VOFF = 1.65)
.MODEL S1BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 1.65 VOFF = 3.65)
.MODEL S2AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 0.60 VOFF = -4.40)
.MODEL S2BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -4.40 VOFF = 0.60)
.ENDS
NOTE: For further discussion of the PSPICE model, consult A New PSPICE Sub-circuit for the Power MOSFET Featuring Global
Temperature Options; authored by William J. Hepp and C. Frank Wheatley.
MOS1
10 DPLCAP
RDRAIN
DBREAK
LDRAIN
DRAIN
LSOURCE
DBODY
RSOURCE
EBREAK
MOS2
RIN CIN
VTO
ESG
CA
EVTO
RGATE
GATE
LGATE
52
11
21
8
6
16
20
9
118
8
6
8
+
-
+
-
+
-
+
-
3
SOURCE
RBREAK
RVTO
VBAT
+
-
19
IT
EDSEGS
S1A S2A
S2BS1B
CB
1817
7
12 15
14
13
13
814
13
5
8
+
-
+
-
5
51
RSCL2 RSCL1
ESCL
6
8
17
18
RFD15P05, RFD15P05SM, RFP15P05
4-103
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is gr anted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see w eb site http://www.intersil.com
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Taipei, Taiwan
Republic of China
TEL: (886) 2 2716 9310
FAX: (886) 2 2715 3029
RFD15P05, RFD15P05SM, RFP15P05
