GaAs IRED & PHOTO-TRIAC (TLP525G) TRIAC ORIVE PROGRAMMABLE CONTROLLERS AC-OUTPUT MODULE SOLID STATE RELAY The TOSHIBA TLP525G, -2 and -4 consist of a photo-triac optically coupled to a gallium arsenide infrared emitting diode. The TLP525G-2 offers two isolated channels in an eight lead plastic DIP package, while the TLP525G-4 provides four isolated channels in a sixteen lead plastic DIP package. e Peak Off-state Voltage Trigger LED Current Peak On-state Current . Isolation Voltage e UL Recognized : 400V (MIN.) : 10mA (MAX.) : 2Apk (MAX.) : 2500Vims (MIN.) : File No. E67349 PIN CONFIGURATIONS (TOP VIEW) TLP525G 1 i} x 4 2c 3 : ANODE : CATHODE : TERMINAL 1 : TERMINAL 2 BON TLP525G-2 TLP525G-4 a 40 1d x adi 7 oF x 16 20 15 30 foal test Ns 40 M 13 Qanre Cw Oo : ANODE 5q 12 : CATHODE } = = : TERMINAL 1 6 11 : TERMINAL 2 i af 10 8c Ng 1, 3,5, 7 : ANODE 2, 4, 6, 8 : CATHODE 9,11, 13,15 : TERMINAL 1 10, 12, 14, 16 : TERMINAL 2 325 Unit in mm TLP525G pos, e ve & al [7 95~9 80 | JEDEC EIAd TOSHIBA 11-5Bl TLP525G-2 966025 | ray he J 8 0.252 345 4 7.85~8.80 12 05 2.5420.25 25M MI | JEDEC EIAJ TOSHIBA 11-10C1 TLP525G-4 7.6220 25 wo 95. 2,540.25 oo 2542025 JEDEC EIAJ TOSHIBA 11-20A1 TLP5256G, -2,-4TLP52956G, -2, -4 (TLP525G) MAXIMUM RATINGS (Ta = 25C) RATING CHARACTERISTIC SYMBOL TLP52sa TLP525G0 UNIT TLP525G-4 Forward Current Ip 50 50 mA a Forward Current Derating Ip/C 0.7 (Ta = 53C) 0.5 (Ta= 25C) mA /C a Pulse Forward Current IFp 1(100ses pulse, 100pps) A Reverse Voltage VR 5 Vv Junction Temperature Tj 125 C Voltage, Output Terminal VpRM 400 Vv 02 On-State RMS Ta= 25C I(RMS) 100 80 mA 9 Current Ta=70C 50 40 mA a Creag ent Derating Ipc 11 0.9 mA/C A |Peak On State Current Ipp 2(100ys pulse, 120pps) A Current (Pan 1ome, Den 10% ITSM 12 A Junction Temperature Tj 115 C Storage Temperature Range Tstg ~55~150 C Operating Temperature Range Topr 40~100 C Lead Soldering Temperature Tso] 260 (10 sec.) C Isolation Voltage BVs 2500(AC, 1 min., R.H.= 60%) Vrms 326 {TLP525G) INDIVIDUAL ELECTRICAL CHARACTERISTICS (Ta = 25C) TLP5256G, -2,-4 CHARACTERISTIC SYMBOL TEST CONDITION MIN. | TYP. | MAX. | UNIT a Forward Voltage VE Ip=10mA 1.0 | 1.15 1.3 Vv a Reverse Current IR VR=5V _ 10 | pA Capacitance Cy V=0, f=1MHz _ 30 _ pF Peak Off-State Current IpRM_ | VDRM=400V _ 10 | 100 | nA & Peak On-State Voltage VIM Ity= 100mA _ 1.7 3.0 Vv 5 Holding Current Ip _ 0.2) mA |Critical Rate of Rise Vin =120V Ta =85C fa in rms _ _ a of Off-State Voltage dv /dt (Figure 1) 500 Vips Critical Rate of Rise Vin=30Vims, lp=15mA of Commutating Voltage dv /dt(c) (Figure 1) ~ 0.2 {Ves COUPLED ELECTRICAL CHARACTERISTICS (Ta = 25C) CHARACTERISTIC SYMBOL TEST CONDITION MIN. | TYP. |MAX. | UNIT Trigger LED Current Ipp Vp=H3Vv 5 10 | mA Capacitance Input to Output Cs Vg=0, f=1MHz 0.8) pF Isolation Resistance Rg Vg =500V 5x10!| 1014) a AC, 1 minute 2500 _ _ : Vrms Isolation Voltage BVs AC, 1 second 5000 | DC, 1 minute _ 5000 | Vdc RECOMMENDED OPERATING CONDITIONS CHARACTERISTIC SYMBOL | MIN. | TYP. |MAX. | UNIT Supply Voltage Vac _ 120 | Vac Forward Current IF 15 | 20 25 | mA Peak On-State Current Itp _ _ 1 A Operating Temperature Topr -25 | 85 C Fig.1 dv/dt TEST CIRCUIT + Rin 1 Vin [] M rl t +5V, Vcc 1200 Voc rR & rr o_ -f2 3 Pros dv/dt(c) dv/dt 327 TLP5256, -2, -4 (TLP525G) IT@RMS) Ta & < a = S 60 5 = oO x 8 & = 120 tg & ze & TLP525G 2a. TLP626G z & = 0 ] pa] Z 8 TLP525G~2, ~4 s & = < TLP525G-2, 4 g 5 40 Zz < 5 0 0 -2 0 20 40 60 80. 100 -2 0 20 40 60 80 ~+100 AMBIENT TEMPERATURE Ta (C) AMBIENT TEMPERATURE Ta (C) Irp DR Ip - VF 3000 3 Ta =25C = 1000 < Be - a be a . 57 E a a % 100 a Be 2 3 5 50 =3 3 3 30 PULSE WIDTH s 100y8 < < Ta =26C z 1 2 3 103 3 10? 3 10 3 10 DUTY CYCLE RATIO DR . 06 0.8 1.0 1.2 14 1.6 1B FORWARD VOLTAGE Vp () AaVF/4Ta Ip Irp VFP 1000 85 3 Be E500 > SE & 300 i] wy & ze E100 =i 2 oe & 50 gs Oo 30 Q of ind SZ < io = 10 9S me PULSE WIDTHS 10p6 <i 2 5 1 . == REPETITIVE FREQUENCY 2S Q 3 - 5S Q = 100H2 4 2 \ Ta=25C 01 0.3 1 3 10 30 50 0.6 1.0 1.4 18 22 26 FORWARD CURRENT Ip (mA) PULSE FORWARD VOLTAGE Vep (V) 328