DS23007 Rev. 9 - 2 1 of 3 MBR730-MBR760
www.diodes.com ãDiodes Incorporated
MBR730 - MBR760
7.5A SCHOTTKY BARRIER RECTIFIER
Features
L
M
A
N
P
D
E
K
C
B
J
G
R
Pin1+
Pin 1 Pin 2
Pin2- Case
+
Maximum Ratings and Electrical Characteristics @ TA= 25°C unless otherwise specified
·Schottky Barrier Chip
·Guard Ring Die Construction for
Transient Protection
·Low Power Loss, High Efficiency
·High Surge Capability
·High Current Capability and Low Forward Voltage Drop
·For Use in Low Voltage, High Frequency Inverters, Free
Wheeling, and Polarity Protection Application
·Lead Free Finish, RoHS Compliant (Note 4)
Mechanical Data
·Case: TO-220AC
·Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
·Moisture Sensitivity: Level 1 per J-STD-020C
·Terminals: Finish – Bright Tin. Solderable per
MIL-STD-202, Method 208
·Polarity: See Diagram
·Marking: Type Number
·Weight: 2.3 grams (approx.)
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic Symbol MBR
730
MBR
735
MBR
740
MBR
745
MBR
750
MBR
760 Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
30 35 40 45 50 60 V
RMS Reverse Voltage VR(RMS) 21 24.5 28 31.5 35 42 V
Average Rectified Output Current
(Note 1) @ TC= 125°CIO7.5 A
Non-Repetitive Peak Forward Surge Current 8.3ms
single half sine-wave superimposed on rated load
(JEDEC Method)
IFSM 150 A
Forward Voltage Drop @ IF= 7.5A, TJ= 25°C
(Note 3) @ IF= 7.5A, TJ= 125°C
@ IF= 15A, TJ= 25°C
@ IF= 15A, TJ= 125°C
VFM
¾
0.57
0.84
0.72
0.75
0.65
¾
¾
V
Peak Reverse Current @ TJ= 25°C
at Rated DC Blocking Voltage @ TJ= 125°CIRM 0.1
15
0.5
50 mA
Typical Total Capacitance (Note 2) CT400 pF
Typical Thermal Resistance Junction to Case (Note 1) RqJc 3.5 °C/W
Voltage Rate of Change (Rated VR)dV/dt 10,000 V/ms
Operating Temperature Range Tj-55 to +150 °C
Storage Temperature Range TSTG -55 to +175 °C
Notes: 1. Thermal resistance junction to case mounted on heatsink.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V DC.
3. Short duration test pulse used to minimize self-heating effect.
4. RoHS revision 13.2.2003. Glass and High Temperature Solder Exemptions Applied, see
EU Directive Annex Notes 5 and 7.
TO-220AC
Dim Min Max
A14.48 15.75
B10.00 10.40
C2.54 3.43
D5.90 6.40
E2.80 3.93
G12.70 14.27
J0.69 0.93
K3.54 3.78
L4.07 4.82
M1.15 1.39
N0.30 0.50
P2.04 2.79
R4.83 5.33
All Dimensions in mm
DS23007 Rev. 9 - 2 2 of 3 MBR730-MBR760
www.diodes.com
0.1
1.0
10
100
0.2
0.1 0.4 0.5
0.3 0.6 0.8 0.9
0.7 1.0
I , INSTANTANEOUS FWD CURRENT (A)
F
V , INSTANTANEOUS FWD VOLTAGE (V)
Fi
g
.2 T
y
p Instantaneous Fwd Characteristics
F
MBR750 - MBR760
MBR730 - MBR745
1 10 100
I , PEAK FWD SURGE CURRENT (A)
FSM
NUMBER OF CYCLES AT 60Hz
Fi
g
. 3 Max Non-Repetitive Sur
g
e Current
8.3 ms Single half
sine-wave (JEDEC method)
25
50
75
100
125
150
1
75
100
1000
4
000
1.0 10
C , CAPACITANCE (pF)
T
V , REVERSE VOLTAGE (V)
Fi
g
.4 T
y
pical Total Capacitance
R
1000.1
f = 1.0MHz
0.001
0.01
0.1
1.0
020 40 60 80 100
I , INSTANTANEOUS REVERSE CURRENT (mA)
R
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Fi
g
.5 T
y
pical Reverse Characteristics
T = 125 C
j
°
T=75C
j
°
T=25C
j
°
10
Resistive or
Inductive load
0 50 100 150
I , AVERAGE FWD CURRENT (A)
(AV)
T , CASE TEMPERATURE ( C)
Fi
g
. 1 Fwd Current Deratin
g
Curve
C
°
0
2
4
6
8
10
