PEMD30,115 - NEXPERIA

Important notice

Dear Customer,

On 7 February 2017 the former NXP Standard Product business became a new company with the

tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS

semiconductors with its focus on the automotive, industrial, computing, consumer and wearable

application markets

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salesaddresses@nexperia.com (email)

Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on

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reserved

Should be replaced with:

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Kind regards,

Team Nexperia

1. Product proﬁle

1.1 General description

NPN/PNP double Resistor-Equipped Transistors (RET) in Surface-Mounted Device (SMD)

plastic packages.

1.2 Features

1.3 Applications

1.4 Quick reference data

PEMD30; PUMD30

NPN/PNP double resistor-equipped transistors;

R1 = 2.2 kΩ, R2 = open

Rev. 01 — 31 March 2006 Product data sheet

Table 1. Product overview

Type number Package PNP/PNP

complement NPN/NPN

complement

Philips JEITA

PEMD30 SOT666 - PEMB30 PEMH30

PUMD30 SOT363 SC-88 PUMB30 PUMH30

n100 mA output current capability nReduces component count

nBuilt-in bias resistors nReduces pick and place costs

nSimpliﬁes circuit design

nLow current peripheral driver nCost-saving alternative for BC847BPN

and BC847BVN

nControl of IC inputs nSwitching loads

Table 2. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

Per transistor; for the PNP transistor with negative polarity

VCEO collector-emitter voltage open base - - 50 V

IOoutput current - - 100 mA

R1 bias resistor 1 (input) 1.54 2.2 2.86 kΩ

Product data sheet Rev. 01 — 31 March 2006 2 of 11

Philips Semiconductors PEMD30; PUMD30

NPN/PNP double resistor-equipped transistors; R1 = 2.2 kΩ, R2 = open

2. Pinning information

3. Ordering information

4. Marking

[1] * = -: made in Hong Kong

* = p: made in Hong Kong

* = t: made in Malaysia

* = W: made in China

Table 3. Pinning

Pin Description Simpliﬁed outline Symbol

1 GND (emitter) TR1

2 input (base) TR1

3 output (collector) TR2

4 GND (emitter) TR2

5 input (base) TR2

6 output (collector) TR1

001aab555

6 45

1 32

654

123

TR1 TR2

006aaa269

Table 4. Ordering information

Type number Package

Name Description Version

PEMD30 - plastic surface-mounted package; 6 leads SOT666

PUMD30 SC-88 plastic surface-mounted package; 6 leads SOT363

Table 5. Marking codes

Type number Marking code[1]

PEMD30 2U

PUMD30 *B3

Product data sheet Rev. 01 — 31 March 2006 3 of 11

Philips Semiconductors PEMD30; PUMD30

NPN/PNP double resistor-equipped transistors; R1 = 2.2 kΩ, R2 = open

5. Limiting values

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard

footprint.

[2] Reﬂow soldering is the only recommended soldering method.

6. Thermal characteristics

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[2] Reﬂow soldering is the only recommended soldering method.

Table 6. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

Per transistor; for the PNP transistor with negative polarity

VCBO collector-base voltage open emitter - 50 V

VCEO collector-emitter voltage open base - 50 V

VEBO emitter-base voltage open collector - 5 V

IOoutput current - 100 mA

ICM peak collector current single pulse;

tp≤1ms - 100 mA

Ptot total power dissipation Tamb ≤25 °C

SOT363 [1] - 200 mW

SOT666 [1][2] - 200 mW

Per device

Ptot total power dissipation Tamb ≤25 °C

SOT363 [1] - 300 mW

SOT666 [1][2] - 300 mW

Tstg storage temperature −65 +150 °C

Tjjunction temperature - 150 °C

Tamb ambient temperature −65 +150 °C

Table 7. Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

Per transistor

Rth(j-a) thermal resistance from

junction to ambient in free air

SOT363 [1] - - 625 K/W

SOT666 [1][2] - - 625 K/W

Per device

Rth(j-a) thermal resistance from

junction to ambient in free air

SOT363 [1] - - 416 K/W

SOT666 [1][2] - - 416 K/W

Product data sheet Rev. 01 — 31 March 2006 4 of 11

Philips Semiconductors PEMD30; PUMD30

NPN/PNP double resistor-equipped transistors; R1 = 2.2 kΩ, R2 = open

7. Characteristics

Table 8. Characteristics

amb

=25

C unless otherwise speciﬁed.

Symbol Parameter Conditions Min Typ Max Unit

Per transistor; for the PNP transistor with negative polarity

ICBO collector-base cut-off

current VCB =50V; I

E= 0 A - - 100 nA

ICEO collector-emitter cut-off

current VCE =30V; I

B=0A --1µA

VCE =30V; I

B=0A;

Tj= 150 °C--50µA

IEBO emitter-base cut-off

current VEB =5V; I

C= 0 A - - 100 nA

hFE DC current gain VCE =5V; I

C=20mA 30 - -

VCEsat collector-emitter

saturation voltage IC= 10 mA; IB= 0.5 mA - - 150 mV

R1 bias resistor 1 (input) 1.54 2.2 2.86 kΩ

Cccollector capacitance VCB =10V; I

E=i

e=0A;

f=1MHz

TR1 (NPN) - - 2.5 pF

TR2 (PNP) - - 3 pF

Product data sheet Rev. 01 — 31 March 2006 5 of 11

Philips Semiconductors PEMD30; PUMD30

NPN/PNP double resistor-equipped transistors; R1 = 2.2 kΩ, R2 = open

VCE =5V

(1) Tamb = 100 °C

(2) Tamb =25°C

(3) Tamb =−40 °C

IC/IB=20

(1) Tamb = 100 °C

(2) Tamb =25°C

(3) Tamb =−40 °C

Fig 1. TR1 (NPN): DC current gain as a function of

collector current; typical values Fig 2. TR1 (NPN): Collector-emitter saturation voltage

as a function of collector current; typical values

VCE =−5V

(1) Tamb = 100 °C

(2) Tamb =25°C

(3) Tamb =−40 °C

IC/IB=20

(1) Tamb = 100 °C

(2) Tamb =25°C

(3) Tamb =−40 °C

Fig 3. TR2 (PNP): DC current gain as a function of

collector current; typical values Fig 4. TR2 (PNP): Collector-emitter saturation voltage

as a function of collector current; typical values

IC (mA)

10−1102

101

006aaa696

200

300

100

400

500

hFE

(1)

(2)

(3)

006aaa697

IC (mA)

10−1102

101

10−1

VCEsat

(V)

10−2

(3)

(2)

(1)

IC (mA)

−10−1−102

−10−1

006aaa691

200

300

100

400

500

hFE

(1)

(2)

(3)

006aaa692

IC (mA)

−10−1−102

−10−1

−1

VCEsat

(V)

−10−2

(3)

(2)

(1)

Product data sheet Rev. 01 — 31 March 2006 6 of 11

Philips Semiconductors PEMD30; PUMD30

NPN/PNP double resistor-equipped transistors; R1 = 2.2 kΩ, R2 = open

8. Package outline

9. Packing information

[1] For further information and the availability of packing methods, see Section 13.

[2] T1: normal taping

[3] T2: reverse taping

Fig 5. Package outline SOT363 (SC-88) Fig 6. Package outline SOT666

04-11-08Dimensions in mm

0.25

0.10

0.3

0.2

pin 1

index

1.3

0.65

2.2

2.0 1.35

1.15

2.2

1.8 1.1

0.8

0.45

0.15

132

465

Dimensions in mm 04-11-08

1.7

1.5

1.7

1.5

1.3

1.1

0.18

0.08

0.27

0.17

0.5

pin 1 index

123

456

0.6

0.5

0.3

0.1

Table 9. Packing methods

The indicated -xxx are the last three digits of the 12NC ordering code.

[1]

Type number Package Description Packing quantity

3000 4000 8000 10000

PEMD30 SOT666 2 mm pitch, 8 mm tape and reel - - -315 -

4 mm pitch, 8 mm tape and reel - -115 - -

PUMD30 SOT363 4 mm pitch, 8 mm tape and reel; T1 [2] -115 - - -135

4 mm pitch, 8 mm tape and reel; T2 [3] -125 - - -165

Product data sheet Rev. 01 — 31 March 2006 7 of 11

Philips Semiconductors PEMD30; PUMD30

NPN/PNP double resistor-equipped transistors; R1 = 2.2 kΩ, R2 = open

10. Soldering

Dimensions in mm

Fig 7. Reﬂow soldering footprint SOT363 (SC-88)

Fig 8. Wave soldering footprint SOT363 (SC-88)

MSA432

solder lands

solder resist

occupied area

solder paste

1.20

2.40

0.50

(4×)

0.40

(2×)0.90 2.10

0.50

(4×)

0.60

(2×)

2.35

2.65

solder lands

solder resist

occupied area

1.15

3.75

transport direction during soldering

1.000.30 4.00

4.50

5.25

sot363

Dimensions in mm

Product data sheet Rev. 01 — 31 March 2006 8 of 11

Philips Semiconductors PEMD30; PUMD30

NPN/PNP double resistor-equipped transistors; R1 = 2.2 kΩ, R2 = open

Reﬂow soldering is the only recommended soldering method.

Fig 9. Reﬂow soldering footprint SOT666

solder lands

solder resist

placement area

occupied area

0.075 Dimensions in mm

2.75

2.45

2.10

1.60

1.20

2.20

2.50

2.00 1.70 1.00 0.30 (2×)

0.15

(4×)

0.375

(4×)

0.40

(6×)

0.55

(2×)

Product data sheet Rev. 01 — 31 March 2006 9 of 11

Philips Semiconductors PEMD30; PUMD30

NPN/PNP double resistor-equipped transistors; R1 = 2.2 kΩ, R2 = open

11. Revision history

Table 10. Revision history

Document ID Release date Data sheet status Change notice Supersedes

PEMD30_PUMD30_1 20060331 Product data sheet - -

Product data sheet Rev. 01 — 31 March 2006 10 of 11

Philips Semiconductors PEMD30; PUMD30

NPN/PNP double resistor-equipped transistors; R1 = 2.2 kΩ, R2 = open

12. Legal information

12.1 Data sheet status

[1] Please consult the most recently issued document before initiating or completing a design.

[2] The term ‘short data sheet’ is explained in section “Deﬁnitions”.

[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status

information is available on the Internet at URL http://www.semiconductors.philips.com.

12.2 Deﬁnitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modiﬁcations or additions. Philips Semiconductors does not give any

representations or warranties as to the accuracy or completeness of

information included herein and shall have no liability for the consequences of

use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet

with the same product type number(s) and title. A short data sheet is intended

for quick reference only and should not be relied upon to contain detailed and

full information. For detailed and full information see the relevant full data

sheet, which is available on request via the local Philips Semiconductors

sales ofﬁce. In case of any inconsistency or conﬂict with the short data sheet,

the full data sheet shall prevail.

12.3 Disclaimers

General — Information in this document is believed to be accurate and

reliable. However, Philips Semiconductors does not give any representations

or warranties, expressed or implied, as to the accuracy or completeness of

such information and shall have no liability for the consequences of use of

such information.

Right to make changes — Philips Semiconductors reserves the right to

make changes to information published in this document, including without

limitation speciﬁcations and product descriptions, at any time and without

notice. This document supersedes and replaces all information supplied prior

to the publication hereof.

Suitability for use — Philips Semiconductors products are not designed,

authorized or warranted to be suitable for use in medical, military, aircraft,

space or life support equipment, nor in applications where failure or

malfunction of a Philips Semiconductors product can reasonably be expected

to result in personal injury, death or severe property or environmental

damage. Philips Semiconductors accepts no liability for inclusion and/or use

of Philips Semiconductors products in such equipment or applications and

therefore such inclusion and/or use is for the customer’s own risk.

Applications — Applications that are described herein for any of these

products are for illustrative purposes only. Philips Semiconductors makes no

representation or warranty that such applications will be suitable for the

speciﬁed use without further testing or modiﬁcation.

Limiting values — Stress above one or more limiting values (as deﬁned in

the Absolute Maximum Ratings System of IEC 60134) may cause permanent

damage to the device. Limiting values are stress ratings only and operation of

the device at these or any other conditions above those given in the

Characteristics sections of this document is not implied. Exposure to limiting

values for extended periods may affect device reliability.

Terms and conditions of sale — Philips Semiconductors products are sold

subject to the general terms and conditions of commercial sale, as published

at http://www.semiconductors.philips.com/proﬁle/terms, including those

pertaining to warranty, intellectual property rights infringement and limitation

of liability, unless explicitly otherwise agreed to in writing by Philips

Semiconductors. In case of any inconsistency or conﬂict between information

in this document and such terms and conditions, the latter will prevail.

No offer to sell or license — Nothing in this document may be interpreted

or construed as an offer to sell products that is open for acceptance or the

grant, conveyance or implication of any license under any copyrights, patents

or other industrial or intellectual property rights.

12.4 Trademarks

Notice: All referenced brands, product names, service names and trademarks

are the property of their respective owners.

13. Contact information

For additional information, please visit: http://www.semiconductors.philips.com

For sales ofﬁce addresses, send an email to: sales.addresses@www.semiconductors.philips.com

Document status[1][2] Product status[3] Deﬁnition

Objective [short] data sheet Development This document contains data from the objective speciﬁcation for product development.

Preliminary [short] data sheet Qualiﬁcation This document contains data from the preliminary speciﬁcation.

Product [short] data sheet Production This document contains the product speciﬁcation.

Philips Semiconductors PEMD30; PUMD30

NPN/PNP double resistor-equipped transistors; R1 = 2.2 kΩ, R2 = open

For more information, please visit: http://www.semiconductors.philips.com.

For sales office addresses, email to: sales.addresses@www.semiconductors.philips.com.

Date of release: 31 March 2006

Document identifier: PEMD30_PUMD30_1

Please be aware that important notices concerning this document and the product(s)

described herein, have been included in section ‘Legal information’.

14. Contents

1 Product proﬁle . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.4 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2

4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3

6 Thermal characteristics. . . . . . . . . . . . . . . . . . . 3

7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 4

8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 6

9 Packing information. . . . . . . . . . . . . . . . . . . . . . 6

10 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

11 Revision history. . . . . . . . . . . . . . . . . . . . . . . . . 9

12 Legal information. . . . . . . . . . . . . . . . . . . . . . . 10

12.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 10

12.2 Deﬁnitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

12.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 10

12.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 10

13 Contact information. . . . . . . . . . . . . . . . . . . . . 10

14 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11