CGD1042HI,112 - NXP Semiconductors

1. Product profile

1.1 General description

Hybrid amplifier module in a SOT115J package, operating at a supply voltage of

24 V (DC), employing Hetero junction Field Effect Transistor (HFET) GaAs dies.

1.2 Features and benefits

Excellent linearity

Superior levels of ESD protection

Extremely low noise

Excellent return loss properties

Gain compensation over temperature

Rugged construction

Unconditionally stable

Thermally optimized design

Compliant with Directive 2002/95/EC, regarding Restriction of the use of certain

Hazardous Subs tances (RoH S)

Integrated ring wave surge protection

1.3 Applications

CATV systems operating in the 40 MHz to 1003 MHz frequency range

1.4 Quick reference data

[1] 79 NTSC channels [f = 54 MHz to 550 MHz] + 75 digital channels [f = 550 MHz to 1003 MHz] (6 dB offset);

tilt extrapolated to 13.5 dB at 1003 MHz.

[2] Direct Current (DC).

CGD1042HI

1 GHz, 22 dB gain GaAs high output power doubler

Rev. 2 — 29 September 2010 Product data sheet

Table 1. Quick reference data

Bandwidth 40 MHz to 1003 MHz; VB= 24 V (DC); ZS = ZL = 75



; Tmb =35



C; unless otherwise

specified.

Symbol Parameter Conditions Min Typ Max Unit

Gppower gain f = 50 MHz - 21.5 - dB

f = 1003 MHz 22 22.7 23.5 dB

CTB composite triple beat Vo = 56.4 dBmV at 1003 MHz [1] -75 65 dBc

CCN carrier-to-composite noise Vo = 56.4 dBmV at 1003 MHz [1] 57 63 - dBc

Itot total current [2] - 440 460 mA

Product data sheet Rev. 2 — 29 Sept ember 2010 2 of 8

NXP Semiconductors CGD1042HI

1 GHz, 22 dB gain GaAs high output power doubler

2. Pinning information

3. Ordering information

4. Limiting values

[1] The ESD pulse of 2000 V corresponds to a class 2 sensitivity level.

Table 2. Pinning

Pin Description Simplified outline Graphic symbol

1 input

2, 3 common

5+V

7, 8 common

9output

91357

2378

sym095

Table 3. Ordering information

Type number Package

Name Description Version

CGD1042HI - rectangular single-ended package; aluminium flange;

2 vertical mounting holes; 2  6-32 UNC and 2 extra

horizontal mounting holes; 7 gold-plated in-line leads

SOT115J

Table 4. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

VBsupply voltage - 30 V

Vi(RF) RF input voltage single tone - 75 dBmV

VESD electrostatic discha r ge vol tage Human Body Model (HBM);

According JEDEC standard

22-A114E

[1] - 2000 V

Biased; According

IEC61000-4-2 - 1500 V

Tstg storage temperature 40 +100 C

Tmb mounting base temperature 20 +100 C

Product data sheet Rev. 2 — 29 Sept ember 2010 3 of 8

NXP Semiconductors CGD1042HI

1 GHz, 22 dB gain GaAs high output power doubler

5. Characteristics

[1] Gp at 1003 MHz minus Gp at 40 MHz.

[2] Flatness is defined as peak deviation to straight line.

[3] Direct Current (DC).

[4] 79 NTSC channels [f = 54 MHz to 550 MHz] + 75 digital channels [f = 550 MHz to 1003 MHz] (6 dB offset); tilt extrapolated to 13.5 dB

at 1003 MHz.

[5] 79 NTSC channels [f = 54 MHz to 550 MHz]; tilt extrapolated to 13.5 dB at 1003 MHz.

Table 5. Characteristics

Bandwidth 40 MHz to 1003 MHz; VB= 24 V (DC); ZS = ZL = 75



; Tmb =35



C; unless otherwise specified.

Symbol Parameter Conditions Min Typ Max Unit

Gppower gain f = 50 MHz - 21.5 - dB

f = 1003 MHz 22 22.7 23.5 dB

SLsl slope straight line f = 40 MHz to 1003 MHz [1] 0.5 - 2 dB

FL flatness of frequency response f = 40 MHz to 1003 MHz [2] -- 1dB

RLin input return loss f = 40 MHz to 160 MHz 20 - - dB

f = 160 MHz to 320 MHz 20 - - dB

f = 320 MHz to 640 MHz 19 - - dB

f = 640 MHz to 870 MHz 17 - - dB

f = 870 MHz to 1003 MHz 16 - - dB

RLout output return loss f = 40 MHz to 160 MHz 20 - - dB

f = 160 MHz to 320 MHz 20 - - dB

f = 320 MHz to 640 MHz 19 - - dB

f = 640 MHz to 870 MHz 18 - - dB

f = 870 MHz to 1003 MHz 17 - - dB

NF noise figure f = 50 MHz - 4.6 5.6 dB

f = 1003 MHz - 5.5 6.5 dB

Itot total current [3] -440460mA

79 NTSC channels + 75 digital channels

CTB composite triple beat Vo = 56.4 dBmV at 1003 MHz [4] -75 65 dBc

CSO composite second-order distortion Vo = 56.4 dBmV at 1003 MHz [4] -77 65 dBc

Xmod cross modulation Vo = 56.4 dBmV at 1003 MHz [4] -68 - dB

CCN carrier-to-composite noise Vo = 56.4 dBmV at 1003 MHz [4] 57 63 - dBc

79 NTSC channels

CTB composite triple beat Vo = 58.4 dBmV at 1003 MHz [5] -70 - dBc

CSO composite second-order distortion Vo = 58.4 dBmV at 1003 MHz [5] -75 - dBc

Xmod cross modulation Vo = 58.4 dBmV at 1003 MHz [5] -65 - dB

Product data sheet Rev. 2 — 29 Sept ember 2010 4 of 8

NXP Semiconductors CGD1042HI

1 GHz, 22 dB gain GaAs high output power doubler

6. Package outline

Fig 1. Package outline SOT115J

UNIT A2

max. cee

max. q1q2U2

U1W

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC JEITA

mm 20.8 9.5 0.51

0.38 0.25 27.2 2.04

2.54 13.75 2.54 5.08 12.7 8.8 4.15

3.85 2.4 38.1 25.4 10.2 4.2 44.75

44.25 8.2

7.8 0.25 0.1 3.8

6-32

UNC

0.7

DIMENSIONS (mm are the original dimensions)

SOT115J

0 5 10 mm

scale

max. D

max. L

min.

max. Z

max.

Rectangular single-ended package; aluminium flange; 2 vertical mounting holes;

2 x 6-32 UNC and 2 extra horizontal mounting holes; 7 gold-plated in-line leads SOT115J

U1q

Z p

78923

Wee1

xMB

yMB

04-02-04

10-06-18

yMB

Product data sheet Rev. 2 — 29 Sept ember 2010 5 of 8

NXP Semiconductors CGD1042HI

1 GHz, 22 dB gain GaAs high output power doubler

7. Abbreviations

8. Revision history

Table 6. Abbreviations

Acronym Description

CATV Community Antenna TeleVision

DC Direct Current

ESD ElectroStatic Discharge

GaAs Gallium-Arsenide

NTSC National Television Standard Committee

RF Radio Frequency

UNC UNified Coarse

Table 7. Revision history

Document ID Release date Data sheet status Change notice Supersedes

CGD1042HI v.2 20100929 Product data sheet - CGD1042HI v.1

Modifications: •Package outline drawings have been updated to the latest version.

•Legal texts have been updated.

CGD1042HI v.1 20090921 Product data sheet - -

Product data sheet Rev. 2 — 29 Sept ember 2010 6 of 8

NXP Semiconductors CGD1042HI

1 GHz, 22 dB gain GaAs high output power doubler

9. Legal information

9.1 Data sheet status

[1] Please consult the most recently issued document before initiating or completing a design.

[2] The term ‘short data sheet’ is explained in section “Definitions”.

[3] The product status of de vice(s) descr ibed in th is docume nt may have cha nged since this docume nt was publis hed and ma y dif fer in case of multiple devices. The latest product status

information is available on the Internet at URL http://www.nxp.com.

9.2 Definitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modifications or additions. NXP Semiconductors does not give any

representations or warranties as to the accuracy or completeness of

information included herein and shall have no liab ility for the consequences of

use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet

with the same product type number(s) and tit le. A short data sh eet is intended

for quick reference only and shou ld not be rel ied u pon to cont ain det ailed and

full information. For detailed and full information see the relevant full data

sheet, which is available on request via the local NXP Semiconductors sales

office. In case of any inconsistency or conf lict with the short data sheet, the

full data sheet shall pre vail.

Product specificatio n — The information and data provided in a Product

data sheet shall define the specification of the product as agreed between

NXP Semiconductors and its customer, unless NXP Semiconductors and

customer have explicitly agreed otherwise in writing. In no event however,

shall an agreement be valid in which the NXP Semiconductors product is

deemed to off er functions and qualities beyond those described in the

Product data sheet.

9.3 Disclaimers

Limited warr a nty and liability — Information in this document is believed to

be accurate and reliable. However, NXP Semiconductors does not give any

representations or warranties, expressed or implied, as to the accuracy or

completeness of such information and shall have no liability for the

consequences of use of such information.

In no event shall NXP Semiconductors be liable for any indirect, incidental ,

punitive, special or consequ ential damages (including - wit hout limitatio n - lost

profits, lost savings, business interruption, costs related to the removal or

replacement of any products or rework charges) whether or not such

damages are based on tort (including negligence), warranty, breach of

contract or any other legal theory.

Notwithstanding any damages that customer might incur for any reason

whatsoever, NXP Semiconductors’ aggregate and cumulative liability t owards

customer for the products described herein shall be limited in accordance

with the Terms and conditions of commercial sale of NXP Semiconductors.

Right to make changes — NXP Semiconductors reserves the right to make

changes to information published in this document, including without

limitation specifications and product descriptions, at any time and without

notice. This document supersedes and replaces all informa tion supplied prior

to the publication hereof .

Suitability for use — NXP Semiconductors products are not designed,

authorized or warranted to be suit able for use in life support, life-crit ical or

safety-critical systems or equipment, nor in applications where failure or

malfunction of an NXP Semiconductors pro duct can reasonably be expected

to result in perso nal injury, death or severe property or environme ntal

damage. NXP Semiconductors accepts no liab ility for inclusion and/or use of

NXP Semiconductors products in such equipment or applications and

therefore such inclusion and/or use is at the customer’s own risk.

Applications — Applications that are described herein for any of these

products are for illustrative purposes only. NXP Semiconductors makes no

representation or warranty tha t such application s will be suitable for the

specified use without further testing or modification.

Customers are responsible for the design and ope ration of their applications

and products using NXP Semiconductors product s, and NXP Semiconductors

accepts no liability for any assistance with applications or customer product

design. It is customer’s sole responsibility to determine whether the NXP

Semiconductors product is suit able and fit for the custome r’s applications and

products planned, as well as fo r the planned application and use of

customer’s third party customer(s). Customers should provide appropriate

design and operating safeguards to minimize the risks associated with their

applications and products.

NXP Semiconductors does not accept any liabili ty related to any default,

damage, costs or problem which is based on any weakness or default in the

customer’s applications or products, or the application or use by customer’s

third party customer(s). Customer is responsible for doing all necessa ry

testing for th e customer’s applications and pro ducts using NXP

Semiconductors products in order to avoid a default of the applications and

the products or of the application or use by cust omer’s third party

customer(s). NXP does not accept any liability in this respect.

Limiting values — Stress above one or more limiting values (as defined in

the Absolute Maximum Ratings System of IEC 60134) will cause permanent

damage to the device. Limiting values are stress ratings only and (proper)

operation of the device at these or any other conditions above those given in

the Recommended operating conditions section (if present) or the

Characteristics sections of this document is not warranted. Constant or

repeated exposure to limiting values will permanent ly and irreversibly affect

the quality and reliability of the device.

Terms and conditions of commercial sale — NXP Semiconductors

products are sold subject to the general terms and conditions of commercial

sale, as published at http://www.nxp.com/profile/terms, unless otherwise

agreed in a valid written individua l agreement. In case an individual

agreement is concluded only the ter ms and conditions of the respective

agreement shall apply. NXP Semiconductors hereby expressly objects to

applying the customer’s general terms and conditions with regard to the

purchase of NXP Semiconductors products by customer.

No offer to sell or license — Nothing i n this document may be interpreted or

construed as an of fer t o sell product s that is open for accept ance or t he grant,

conveyance or implication of any license under any copyrights, patents or

other industrial or intellectual property rights.

Export control — This document as well as the item(s) described herein

may be subject to export control regulatio ns. Export might require a prior

authorization from national authorities.

Document status[1][2] Product status[3] Definition

Objective [short] data sheet Development This document contains data from the obj ective specification for product development.

Preliminary [short] dat a sheet Qualification This document contains data from the preliminary specification.

Product [short] dat a sheet Production This document contains the product specification.

Product data sheet Rev. 2 — 29 Sept ember 2010 7 of 8

NXP Semiconductors CGD1042HI

1 GHz, 22 dB gain GaAs high output power doubler

Quick reference data — The Quick reference data is an extract of the

product data given in the Limiting values and Characteristics sections of this

document, and as such is not complete, exhaustive or legally binding.

Non-automotive qualified products — Unless this data sheet expressly

states that this specific NXP Semiconductors product is automotive qualified,

the product is not suitable for aut omo tive use. It i s neit her qua lif ied nor tested

in accordance with automotive testing or application requirements. NXP

Semiconductors accepts no liability for inclusion and/or use of

non-automotive qualified products in automotive equipment or applications.

In the event that customer uses the product for design-in and use in

automotive applications to automot ive specifications and standard s, customer

(a) shall use the product without NXP Semiconductors’ warranty of the

product for such automotive applications, use and specifications, and (b)

whenever customer uses the product for automotive applications beyond

NXP Semiconductors’ specifications such use shall be solely at customer’s

own risk, and (c) customer fully indemnifies NXP Semiconductors for any

liability, damages or failed product claims resulting f rom customer design an d

use of the product for automotive applications beyond NXP Semiconductors’

standard warranty and NXP Semiconductors’ product specif ications.

9.4 Trademarks

Notice: All referenced b rands, produc t names, service names and trademarks

are the property of their respect i ve ow ners.

10. Contact information

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

NXP Semiconductors CGD1042HI

1 GHz, 22 dB gain GaAs high output power doubler

For more information, please visit: http://www.nxp.co m

For sales office addresses, please send an email to: salesaddresses@nxp.com

Date of release: 29 September 2010

Document identifier: CGD1042HI

Please be aware that important notices concerning this document and the product(s)

described herein, have been included in section ‘Legal information’.

11. Contents

1 Product profile. . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2

4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2

5 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3

6 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 4

7 Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . . 5

8 Revision history. . . . . . . . . . . . . . . . . . . . . . . . . 5

9 Legal information. . . . . . . . . . . . . . . . . . . . . . . . 6

9.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 6

9.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

9.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

9.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

10 Contact information. . . . . . . . . . . . . . . . . . . . . . 7

11 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8