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DHG 30 I 600HA
advanced
Sonic-FRD
Symbol Definition R a t i n g s
Features / Advantages:
● Planar passivated chips
● Very low leakage current
● Very short recovery time
● Improved thermal behaviour
● Very low Irm-values
● Very soft recovery behaviour
● Avalanche voltage rated for reliable
operation
● Soft reverse recovery for low EMI/RFI
● Low Irm reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating switch
typ. max.
I
FSM
I
R
A
µA
V
200
I
FAV
A
V
F
2.36
R
thJC
0.70 K/W
V
R
=
13
min.
30
ms (50 Hz), sine
Applications:
● Antiparallel diode for high frequency
switching devices
● Antisaturation diode
● Snubber diode
● Free wheeling diode
● Rectifiers in switch mode power
supplies (SMPS)
● Uninterruptible power supplies (UPS)
V
RRM
V600
50
T
VJ
V°C=
T
VJ
°C=mA
5
Package:
Part number
V
R
=
T
VJ
=°CI
F
=A
V
T
C
=85°C
P
tot
180 W
T
C
°C=
A
I
RM
12
/dt
I
F
=A;
V
R
=V
A
t
rr
E
AS
tbd mJ
T
VJ
°C
=
I
AS
=A;L = µH
I
AR
A
V
A
=tbd
f = 10 kHz
1.5·V
R
typ.;
T
VJ
150 °C
-55
High Performance Fast Recovery Diode
Low Loss and Soft Recovery
Single Diode
I
t
RRM
FAV
rr
=
=
=
600
30
35
30
T
VJ
=45°C
30
-di
F
=600 A/µs
400
100
DHG 30 I 600HA
ns
600
V
600
25
25
25
t
p
=10
25
max. repetitive rev ers e voltage
reverse current
forward voltage
average forward current
thermal resistance junction to case
virtual junction temperature
total power dissipation
max. forward surge current
max. reverse recovery current
non-repetitive avalanche energy
repetitive avalanche current
reverse recovery time
Conditions Unit
(Marking on product)
T
VJ
°C
=25
C
J
pF
unction capacitance V
R
=V;
300 T
VJ
125
V
F0
V
1.31
T
VJ
=150°C
r
F
28.6 Ω
f = 1 MHz =°C
25
m
TO-247AD
V2.20T
VJ
=°CI
F
=A
V
30 125
I
F
=A60
I
F
=A60
ns35
ns
● Industry standard outline
● Epoxy meets UL 94V-0
● RoHS compliant
T
VJ
°C=25
T
VJ
°C=125
T
VJ
°C=25
T
VJ
°C=125
rectangular, d = 0.5
threshold voltage
slope resistance for power loss calculation only
IXYS reserves the right to change limits, conditions and dimensions.
© 2006 IXYS all rights reserved
0614
* Data according to IEC 60747and per diode unless otherwise specified