Important notice
Dear Customer,
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1. Product profile
1.1 General description
Two high-speed switching diodes fabricated in planar te chnology, and encapsulated in a
small SOT143B Surface-Mounted Device (SMD) plastic package. The diodes are not
connected.
1.2 Features and benefits
High switching speed: trr 6ns
Reverse voltage: VR60 V
Repetitive peak reverse voltage: VRRM 60 V
Repetitive peak forward current: IFRM 600 mA
AEC-Q101 qualified
Small SMD plastic package
1.3 Applications
High-speed switching in e.g. surface-mounted circuits
1.4 Quick reference data
[1] Single diode loaded.
[2] Device mounted on an FR4 Printed-Circuit Board (PCB).
[3] When switched from IF= 400 mA to IR= 400 mA; RL= 100 Ω; measured at IR=40mA.
BAS56
High-speed double diode
Rev. 3 — 29 June 2010 Product data sheet
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
IFforward current [1][2] --200mA
IRreverse current VR=60V - - 100 nA
VRreverse voltage - - 60 V
trr reverse recovery time [3] --6ns
BAS56 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 3 — 29 June 2010 2 of 12
NXP Semiconductors BAS56
High-speed double diode
2. Pinning information
3. Ordering information
4. Marking
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
Table 2. Pinning
Pin Description Simplified outline Graphic symbol
1 cathode (diode 1)
2 cathode (diode 2)
3 anode (diode 2)
4 anode (diode 1)
21
34
006aab10
0
12
43
Table 3. Ordering i nformation
Type number Package
Name Description Version
BAS56 - plastic surface-mounted package; 4 leads SOT143B
Table 4. Marking codes
Type number Marking code[1]
BAS56 *L5
BAS56 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 3 — 29 June 2010 3 of 12
NXP Semiconductors BAS56
High-speed double diode
5. Limiting values
[1] Series connection.
[2] Device mounted on an FR4 PCB.
[3] Single diode loaded.
[4] Double diode loaded.
[5] Tj=25°C prior to surge.
6. Thermal characteristics
[1] Device mounted on an FR4 PCB.
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VRRM repetitive peak reverse
voltage -60V
[1] -120V
VRreverse voltage - 60 V
[1] -120V
IFforward current [2][3] -200mA
[2][4] -150mA
IFRM repetitive peak forward
current [3] -600mA
[4] -430mA
IFSM non-repetitive peak forward
current square wave [5]
tp=1μs-9A
tp= 100 μs-3A
tp=10ms - 1.7 A
Ptot total power dissipation Tamb =25°C[2] -250mW
Tjjunction temperature - 150 °C
Tstg storage temperature 65 +150 °C
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
Rth(j-a) thermal resistance from
junction to ambient in free air [1] - - 500 K/W
Rth(j-t) thermal resistance from
junction to tie-point - - 360 K/W
BAS56 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 3 — 29 June 2010 4 of 12
NXP Semiconductors BAS56
High-speed double diode
7. Characteristics
[1] Tamb =25°C; device has reached the thermal equilibrium when mounted on an FR4 PCB.
[2] Series connection.
[3] When switched from IF= 400 mA to IR= 400 mA; RL= 100 Ω; measured at IR=40mA.
[4] When switched from IF= 400 mA; tr=30ns.
[5] When switched from IF= 400 mA; tr= 100 ns.
Table 7. Characteristics
Tj=25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
VFforward voltage IF=200mA [1] --1V
IRreverse current VR= 60 V - - 100 nA
VR=60V;T
j=150°C - - 100 μA
VR=120V [2] - - 100 nA
VR=120V; T
j= 150 °C[2] - - 100 μA
Cddiode capacitance f = 1 MHz; VR=0V --2.5pF
trr reverse recovery time [3] --6ns
VFR forward recovery voltage [4] --2V
[5] --1.5V
BAS56 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 3 — 29 June 2010 5 of 12
NXP Semiconductors BAS56
High-speed double diode
Tj=25°C Based on square wave currents.
Tj=25°C; prior to surge
Fig 1. Forward current as a function of forward
voltage; typical values Fig 2. No n-repetitive peak forward current as a
function of pulse duration
(1) VR= 60 V; maximum values
(2) VR= 60 V; typical values f=1MHz; T
j=25°C
Fig 3. Reverse current as a function of junction
temperature Fig 4. Diode capacitan ce as a function of reverse
voltage; typical values
mbh279
02
300
0
100
200
1
IF
(mA)
VF (V)
mbg703
10
1
102
IFSM
(A)
101
tp (μs)
110
4
103
10 102
mbh282
10
200
0 100 Tj (°C)
IR
(μA)
1
102
101
102
(1) (2)
mbh283
0102030
VR (V)
2.0
Cd
(pF)
1.5
0.5
0
1.0
BAS56 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 3 — 29 June 2010 6 of 12
NXP Semiconductors BAS56
High-speed double diode
8. Test information
(1) Single diode loaded
(2) Double diode loaded
Fig 5. Forward current as a function of ambient temperature; derating curves
mbg439
0 100
(1)
(2)
200
300
200
0
100
Tamb (°C)
IF
(mA)
(1) IR=40mA
Fig 6. Re verse recovery time test circuit and wav eforms
Input signal: pulse duration tp= 300 ns; duty cycle δ= 0.01.
Fig 7. F orward recovery voltage test circuit and waveforms
trr
(1)
+ I
F
t
output signal
t
r
t
p
t
10 %
90 %
V
R
input signal
V = V
R
+
I
F
×
R
S
R
S
= 50 ΩI
F
D.U.T.
R
i
= 50 Ω
SAMPLING
OSCILLOSCOPE
mga881
t
r
t
t
p
10 %
90 %
I
input signal
R
S
= 50 Ω
I
R
i
= 50 Ω
OSCILLOSCOPE
1 kΩ450 Ω
D.U.T.
mga88
2
VFR
t
output signal
V
BAS56 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 3 — 29 June 2010 7 of 12
NXP Semiconductors BAS56
High-speed double diode
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualifica tion for discrete semiconductors, and is
suitable for use in auto motive applications.
9. Package outline
10. Packing information
[1] For further information and the availability of packing methods, see Section 14.
Fig 8. Package outline BAS56 (SOT143B)
04-11-16Dimensions in mm
3.0
2.8 1.1
0.9
2.5
2.1
1.4
1.2
1.7
1.9
0.48
0.38
0.15
0.09
0.45
0.15
0.88
0.78
21
34
Table 8. Packing methods
The indicated -xxx are the last thre e digits of the 12NC ordering code.[1]
Type number Package Description Packing quantity
3000 10000
BAS56 SOT143B 4 mm pitch, 8 mm tape and reel -215 -235
BAS56 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 3 — 29 June 2010 8 of 12
NXP Semiconductors BAS56
High-speed double diode
11. Soldering
Fig 9. Reflow soldering footprint BAS56 (SOT143B)
Fig 10. Wave soldering footprint BAS56 (SOT143B)
solder lands
solder resist
occupied area
solder paste
sot143b_
fr
0.9
0.60.7
3.25
3
0.6
(3×)
0.6
(3×)
0.5
(3×)
0.7
(3×)
1
1.9
2
0.75 0.95
Dimensions in mm
solder lands
solder resist
occupied area
preferred transport direction during soldering
sot143b_
fw
4.6
4.45
1.2
(3×)
1.425
(3×)
1.425
1
1.2
2.2
2.575
Dimensions in mm
BAS56 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 3 — 29 June 2010 9 of 12
NXP Semiconductors BAS56
High-speed double diode
12. Revision history
Table 9. Revision history
Document ID Release date Data sheet status Change notice Supersedes
BAS56 v.3 20100629 Product data sheet - BAS56_2
Modifications: The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
Legal texts have been adapted to the new company name where appropriate .
Section 1.1 “General description: amended
Section 4 “Marking: updated
Table 1 “Quick reference data: added
Section 8 “Test information: added
Figure 8: superseded by minimized package outline drawing
Section 10 “Packing information: added
Section 11 “Soldering: added
Section 13 “Legal information: updated
BAS56_2 19960910 Product specification - BAS56_1
BAS56_1 19960423 Product specification - -
BAS56 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 3 — 29 June 2010 10 of 12
NXP Semiconductors BAS56
High-speed double diode
13. Legal information
13.1 Data sheet status
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of de vice(s) descr ibed in th is document m ay have cha nged since thi s document w as publish ed and may di ffe r in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
13.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liab ility for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and tit le. A short data sh eet is intended
for quick reference only and shou ld not b e relied u pon to cont ain det ailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semicond uctors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall pre va il.
Product specificat io nThe information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to off er functions and qualities beyond those described in the
Product data sheet.
13.3 Disclaimers
Limited warr a nty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warrant ies, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information.
In no event shall NXP Semiconductors be liable for any indirect, incidenta l ,
punitive, special or consequ ential damages (including - wit hout limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ ag gregate and cumulative l iability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all informa tion supplied prior
to the publication hereof .
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suit able for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors pro duct can reasonably be expected
to result in perso nal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liab ility for inclusion and/or use of
NXP Semiconductors products in such equipment or application s and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and ope ration of their applications
and products using NXP Semiconductors product s, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suit able and fit for the custome r’s applications and
products planned, as well as fo r the planned application and use of
customer’s third party customer(s). Custo mers should provide appropriate
design and operating safeguards to minimize the risks associate d with t heir
applications and products.
NXP Semiconductors does not accept any liabil ity related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party custo m er(s). Customer is responsible for doing all necessary
testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by cust omer’s third party
customer(s). NXP does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individua l agreement. In case an individual
agreement is concluded only the ter m s and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
No offer to sell or license — Nothing i n this document may be interpreted or
construed as an of fer t o sell product s that is open for accept ance or the gr ant,
conveyance or implication of any license under any copyrights, patents or
other industrial or inte llectual property right s.
Export control — This document as well as the item(s) described herein
may be subject to export control regulatio ns. Export might require a prior
authorization from national authorities.
Document status[1][2] Product status[3] Definition
Objective [short] data sheet Development This document contain s data from the objective specification for product development .
Preliminary [short] dat a sheet Qualification This document contains data from the preliminary specificat ion.
Product [short] data sheet Production This document contains the product specification.
BAS56 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 3 — 29 June 2010 11 of 12
NXP Semiconductors BAS56
High-speed double diode
Quick reference data The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
13.4 Trademarks
Notice: All referenced b rands, produc t names, service names and trademarks
are the property of their respective ow ners.
14. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
NXP Semiconductors BAS56
High-speed double diode
© NXP B.V. 2010. All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 29 June 2010
Document identifier: BAS56
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
15. Contents
1 Product profile. . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 1
2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2
4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
6 Thermal characteristics . . . . . . . . . . . . . . . . . . 3
7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 4
8 Test information. . . . . . . . . . . . . . . . . . . . . . . . . 6
8.1 Quality information . . . . . . . . . . . . . . . . . . . . . . 7
9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 7
10 Packing information . . . . . . . . . . . . . . . . . . . . . 7
11 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
12 Revision history. . . . . . . . . . . . . . . . . . . . . . . . . 9
13 Legal information. . . . . . . . . . . . . . . . . . . . . . . 10
13.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 10
13.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
13.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 10
13.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 11
14 Contact information. . . . . . . . . . . . . . . . . . . . . 11
15 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12