IXTH15N50L2 - IXYS - Pdf.Support

Symbol Test Conditions Maximum Ratings

VDSS TJ= 25°C to 150°C 500 V

VDGR TJ= 25°C to 150°C, RGS = 1MΩ500 V

VGSS Continuous ±20 V

VGSM Transient ±30 V

ID25 TC= 25°C15A

IDM TC= 25°C, Pulse Width Limited by TJM 35 A

IATC= 25°C 15 A

EAS TC= 25°C 750 mJ

PDTC= 25°C 300 W

TJ-55 ... +150 °C

TJM 150 °C

Tstg -55 ... +150 °C

TL1.6mm (0.062 in.) from Case for 10s 300 °C

TSOLD Plastic Body for 10s 260 °C

MdMounting Torque (TO-220 & TO-247) 1.13/10 Nm/lb.in.

Weight TO-263 2.5 g

TO-220 3.0 g

TO-247 6.0 g

DS100054B(12/11)

Symbol Test Conditions Characteristic Values

(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.

BVDSS VGS = 0V, ID = 250μA 500 V

VGS(th) VDS = VGS, ID = 250μA 2.5 4.5 V

IGSS VGS = ± 20V, VDS = 0V ±100 nA

IDSS VDS = VDSS, VGS = 0V 25 μA

TJ = 125°C 200 μA

RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 480 mΩ

IXTA15N50L2

IXTP15N50L2

IXTH15N50L2

VDSS = 500V

ID25 = 15A

RDS(on) ≤≤

≤≤

≤ 480mΩΩ

ΩΩ

Ω

Linear L2TM

Power MOSFETs

w/ Extended FBSOA

N-Channel Enhancement Mode

Avalanche Rated

G = Gate D = Drain

S = Source Tab = Drain

TO-247 (IXTH)

G

SD (Tab)

D

GDS

TO-220AB (IXTP)

D (Tab)

TO-263 AA (IXTA)

G

S

D (Tab)

Features

zDesigned for Linear Operation

zInternational Standard Packages

zAvalanche Rated

zMolding Epoxies Meet UL 94 V-0

Flammability Classification

zGuaranteed FBSOA at 75°C

Advantages

zEasy to Mount

zSpace Savings

zHigh Power Density

Applications

zSolid State Circuit Breakers

zSoft Start Controls

zLinear Amplifiers

zProgrammable Loads

zCurrent Regulators

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXTA15N50L2 IXTP15N50L2

IXTH15N50L2

IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2

by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537

Symbol Test Conditions Characteristic Values

(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.

gfs VDS = 10V, ID = 0.5 • ID25, Note 1 4.5 6.3 8.0 S

Ciss 4080 pF

Coss VGS = 0V, VDS = 25V, f = 1MHz 265 pF

Crss 68 pF

td(on) 38 ns

tr 73 ns

td(off) 110 ns

tf 65 ns

Qg(on) 123 nC

Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 20 nC

Qgd 72 nC

RthJC 0.42 °C/W

RthCS (TO-220) 0.50 °C/W

(TO-247) 0.25 °C/W

Safe Operating Area Specification

Characteristic Values

Symbol Test Conditions Min. Typ. Max.

SOA VDS = 400V, ID = 375mA, TC = 75°C, tp = 2s 150 W

Source-Drain Diode

Symbol Test Conditions Characteristic Values

(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.

ISVGS = 0V 15 A

ISM Repetitive, pulse width limited by TJM 60 A

VSD IF = 15A, VGS = 0V, Note 1 1.5 V

trr 570 ns

IF = 15A, -di/dt = 100A/μs, VR = 100V, VGS = 0V

TO-247 Outline

1 = Gate

2 = Drain

3 = Source

Pins: 1 - Gate 2 - Drain

3 - Source

TO-220 Outline

Resistive Switching Times

VGS = 10V, 0.5 • VDSS, ID = 0.5 • ID25

RG = 10Ω (External)

Note 1: Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.

TO-263 Outline

1 = Gate

2 = Drain

3 = Source

4 = Drain

IXTA15N50L2 IXTP15N50L2

IXTH15N50L2

Fi g . 1. Ou tp u t C h ar acter i sti cs @ T

J

=25ºC

0

2

4

6

8

10

12

14

16

01234567

V

DS

- V olts

I

D

- Amperes

V

GS

= 20V

12V

10V

9V

6

V

8

V

7

V

5

V

Fig. 2. Extended Output Characteristics @ T

J

= 25ºC

0

5

10

15

20

25

30

35

40

0 5 10 15 20 25 30

V

DS

- V olts

I

D

- Amperes

V

GS

= 20V

14V

12V

10V

6

V

5

V

7

V

8

V

9V

Fi g . 3. Ou tp u t C h ar acter i sti cs @ T

J

= 125ºC

0

2

4

6

8

10

12

14

16

02468101214

V

DS

- V olts

I

D

- Amperes

V

GS

= 20V

10V

9V

7

V

8V

5V

6V

Fig. 4. R

DS(on)

Normalized to I

D

= 7.5A Value vs.

Junction T em perature

0.4

0.8

1.2

1.6

2.0

2.4

2.8

-50 -25 0 25 50 75 100 125 150

T

J

- Degrees Centigrade

R

DS(on)

- Normali zed

V

GS

= 10V

I

D

= 15A

I

D

= 7. 5A

Fig. 5. R

DS(on)

Normalized to I

D

= 7.5A Value vs.

Drain Current

0.6

1.0

1.4

1.8

2.2

2.6

3.0

0 5 10 15 20 25 30 35

I

D

- Ampere s

R

DS(on)

- Normalized

V

GS

= 10V T

J

= 125ºC

T

J

= 25ºC

Fi g . 6. Maxi mu m D r ai n C u r r en t vs.

Case Temper atu r e

0

2

4

6

8

10

12

14

16

-50 -25 0 25 50 75 100 125 150

T

C

- Degrees Centigrade

I

D

- Amperes

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXTA15N50L2 IXTP15N50L2

IXTH15N50L2

Fig. 7. Input Admittance

0

2

4

6

8

10

12

14

16

18

3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5

VGS - V olts

ID - Amperes

T

J

= 125ºC

25ºC

- 40ºC

Fig. 8. Transconductance

0

2

4

6

8

10

12

0 2 4 6 8 101214161820

ID - A mper es

g

f s

- Siemens

T

J

= - 40ºC

25ºC

125ºC

Fi g. 9. F orwar d Vol tage D ro p o f I ntr in sic Di o de

0

5

10

15

20

25

30

35

40

45

0.5 0.6 0.7 0.8 0.9 1

VSD - Volts

IS - Amperes

T

J

= 125ºC

T

J

= 25ºC

Fig. 10. Gate Charg e

0

2

4

6

8

10

12

14

16

0 20 40 60 80 100 120 140 160 180

QG - Nan o Coulombs

VGS - Volts

V

DS

= 250V

I

D

= 7. 5A

I

G

= 10mA

Fi g . 11. C ap aci tance

10

100

1,000

10,000

0 5 10 15 20 25 30 35 40

VDS - V o lts

Capacitance - PicoFarads

f

= 1 MHz

Ciss

Crss

Coss

Fig. 12. Maximum Transient T hermal Im pedance

0.01

0.1

1

0.0001 0.001 0.01 0.1 1 10

Pulse Width - Seconds

Z(th)JC - ºC / W

IXTA15N50L2 IXTP15N50L2

IXTH15N50L2

Fig. 13. Forward-Bias Safe Operating Area

@ T

C

= 25º C

0.1

1

10

100

10 100 1000

V

DS

- Vo lts

I

D

- A mp e re s

T

J

= 150ºC

T

C

= 25ºC

Single Pulse

25µs

1ms

100µs

R

DS(on)

Limi t

DC

10ms

100ms

Fi g . 14. F o r war d -B i as Safe Op er ati n g Area

@ T

C

= 75ºC

0.1

1

10

100

10 100 1000

V

DS

- V o lt s

I

D

- A mp e re s

T

J

= 150 ºC

T

C

= 75ºC

Sing le Pulse

25µs

1ms

100µs

R

DS(on)

Limit

10ms

DC 100ms