JANTXV2N3866AUB - Microsemi Corp.

2N3866(A)UB

Compliant

NPN Silicon High-Frequency Transistor

Qualified per MIL-PRF-19500/398

Quali f i ed Lev els:

JAN, JANT X, JANTXV

and JANS

DESCRIPTION

This 2N3866(A) silicon VHF-UHF am plifier transistor is military qualified up to the JANS level

for high-reliability applications. It is also available in a t op hat l eaded TO -205A D packag e.

UB Package

Also available in:

TO-205AD (T O-39)

package

(leaded)

2N3866(A)

Important: For the latest information, vis it our web site http://www.microsemi.com.

FEATURES

• JEDEC registered 2N3866 number

• JAN, JANTX, JANTXV and JANS qualifications also available per MIL-PRF-19500/398

• RoHS com pliant

APPL ICAT IONS / BENEFITS

• Ceramic UB package

• Lightweight

• Military and other high-reliability applications

MAXIMUM RATINGS @ TA = +25 °C unless otherwise noted

Parameter s / Tes t Conditions Symbol Value Unit

Junction & Stor age Temperature

TJ, Tstg

-65 to +200

°C

Thermal Resistance Junction-to-Case

RӨJC

60

ºC/W

Thermal Resistance Junction-to-Ambient

RӨJA

325

ºC/W

Collector – Emitter Voltage

VCEO

30

V

Collector – Base Voltage

VCBO

60

V

Emitter - Base Voltage

VEBO

3.5

V

Total P ower Dissipation (1)

@ TA = +25 ºC (1)

PT

0.5

W

Collector Current

IC

0.4

A

Notes: 1. Derated linearly 3.08 mW/°C for TA > +25 °C

MSC – Lawrence

6 Lake Street,

Lawrence, MA 01841

Tel: 1-800-446-1158 or

(978) 620-2600

Fax: (978) 689-0803

MSC – Ireland

Gort Road Business Park,

Ennis, Co. Clare, Ireland

Tel: +353 (0) 65 6840044

Fax: +353 (0) 65 6822298

Website:

www.microsemi.com

2N3866(A)UB

M ECHANI CAL and PACKAGING

• CASE: Ceramic.

• TERMINALS: Gold plating over nickel under plate.

• MARKING: Part number, date code, manufacturer’s ID.

• TAPE & REEL opti on: Standard per EIA-418D. Cons ult factory for quantities.

• WEIGHT: Less than 0.04 grams.

• See Package Dimensions on last page.

PART NOME NCLAT URE

JAN 2N3866 (A) UB

Reliability Level

JAN = JAN lev el

JANTX = JANTX level

JANTXV = JANTXV level

JANS = JANS level

Blank = Commercial

Surface Mount package

Forward Cur rent Tr ansfer

Ratio selection option

JEDEC type number

SYMBOLS & DEFINITIONS

Symbol

Definition

I

B

Base cur rent: The val ue of the dc current into the base term inal.

IC

Collector current: The value of the dc c urrent into the coll ector terminal.

VBE

Base-emitter voltage: The dc voltage between the base and the emitter.

V

CB

Collector-base vol tage: The dc vol tage between the collector and the base.

VCBO Collector-base voltage, base open: The vol tage between the collec tor and base terminals when the emitter terminal is

open-circuited.

VCE

Collector-emitter voltage: The dc voltage between the collector and the emitter.

VCEO Collector-emitter voltage, base open: The voltage between the collector and the emitter terminal s when the base

terminal is open-circuited.

VCC

Collector-suppl y voltage: The supply voltage appl ied to a circuit connected to the col lector.

VEBO

Emitter-base voltage, collector open: The voltage between the emitter and base termi nals with the collector terminal

open-circuited.

2N3866(A)UB

ELECTRICAL CHARACTE RISTICS @ TA = +2 5 °C, unles s otherwis e not ed

Characteristics

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector-Emit ter Breakdown Voltage

IC = 5 mA

V(BR)CEO

30

V

Collector-Base Breakdown Vol tage

IC = 10 0 µA

V(BR)CBO

60

V

Emitter-Base Break down Volt age

IE = 10 0 µA

V(BR)EBO

3.5

V

Collector-Emit ter Cut off Current

VCE = 28 V

ICEO

20 µA

Collector-Emit ter Cut off Current

VCE = 55 V

ICES1 100 µA

ON CHARACTERISTICS (1)

Forward-Current Transfer Ratio

IC = 50 mA, VCE = 5.0 V

IC = 360 mA, VCE = 5.0 V

2N3866UB

2N3866AUB

2N3866UB

2N3866AUB

hFE

15

25

5

8

200

Collector-Emitter Saturation Voltage

IC = 100 mA, IB = 10 mA

VCE(sat) 1.0 V

Collector-Emit ter Cut off Current – High Tem p Operation

VCE = 55 V, TA = +150 ºC ICES2 2.0 mA

Forward-Current Transfer Ratio –

L ow Tem perat ure Op er ation

VCE = 5. 0 V, IC = 50 mA,

TA

= -55

ºC

2N3866UB

2N3866AUB

hFE3

7

12

DYNAMIC CHARACTERISTICS

Magn itude of Common Emitter Small-

Si gna l Sho r t-Circuit Forward Current

Trans fer Ratio

IC = 50 mA, VCE = 15 V, f = 200 MHz

2N3866UB

2N3866AUB |hFE|

2.5

4.0

8.0

7.5

O utput Capac itance

VCB = 28 V, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz

Cobo 3.5 pF

POWER OUTPUT CHARACTERISTICS

Power Output

VCC = 28 V; Pin = 0.15 W; f = 400 MH z *

VCC = 28 V; Pin = 0.07 5 W; f = 40 0 MHz *

* See Figur e 4 on MIL-PRF-19500/398

P1out

P2out 1.0

0.5 2.0

W

Collector Efficiency

VCC = 28 V; Pin = 0.15 W; f = 4 00 MHz

VCC = 28 V; Pin = 0.07 5 W; f = 40 0 MHz

n1

n2 45

40 %

Clamp In du c tive

Collector-Emit ter Breakdown Voltage

VBE = -1.5 V, IC = 40 mA V(BR)CEX 55 Vdc

(1) Pulse Test: pulse width = 300 µs, duty cycle ≤ 2.0%

2N3866(A)UB

PACKAGE DIM ENSIONS

Symbol

Dimensions

Note Symbol

Dimensions

Note

inch

millimeters

inch

millimeters

Min

Max

Min

Max

Min

Max

Min

Max

BH

0.046

0.056

1.17

1.42

LS1

0.035

0.040

0.89

1.02

BL

0.115

0.128

2.92

3.25

LS2

0.071

0.079

1.80

2.01

BW

0.085

0.108

2.16

2.74

LW

0.016

0.024

0.41

0.61

CL

-

0.128

-

3.25

r

-

0.008

-

0.20

CW

-

0.108

-

2.74

r1

-

0.012

-

0.31

LL1

0.022

0.038

0.56

0.96

r2

-

0.022

-

0.56

LL2

0.017

0.035

0.43

0.89

NOTES:

1. Dimensions are in inches. Millimeters are given for information only.

2. Hatched areas on package denote metallized areas.

3. Lid material: Kovar.

4. Pad 1 = Base, Pad 2 = Emitter, Pad 3 = Collector, Pad 4 = Shielding connected to the lid.

5. In accordance with ASME Y14.5M, diameters are equivalent to Φx symbology.