BFG67/X,215 - NXP Semiconductors / Philips Semiconductors

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NXP Semiconductors

BFG67; BFG67/X; BFG67/XR

NPN 8 GHz wideband transistors

Rev. 05 — 23 November 2007 Product data sheet

NXP Semiconductors Product speciﬁcation

NPN 8 GHz wideband transistors BFG67; BFG67/X; BFG67/XR

FEATURES

•High power gain

•Low noise figure

•High transition frequency

•Gold metallization ensures

excellent reliability.

APPLICATIONS

Wideband applications in the GHz

range, such as satellite TV tuners and

portable RF communications

equipment.

DESCRIPTION

NPN silicon transistor in a 4-pin,

dual-emitter SOT143B plastic

package. Available with in-line emitter

pinning (BFG67) and cross emitter

pinning (BFG67/X). Version with

reverse pinning (BFG67/XR) also

available on request.

MARKING

TYPE NUMBER CODE

BFG67 (Fig.1) V3%

BFG67/X (Fig.1) %MV

BFG67/XR (Fig.2) V26

PINNING

PIN DESCRIPTION

BFG67 BFG67/X BFG67/XR

1 collector collector collector

2 base emitter emitter

3 emitter base base

4 emitter emitter emitter

Fig.1 Simplified outline

SOT143B.

handbook, 2 columns

Top view

MSB014

Fig.2 Simplified outline

SOT143R.

handbook, 2 columns

Top view

MSB035

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT

VCEO collector-emitter voltage open base −10 V

ICcollector current (DC) −50 mA

Ptot total power dissipation Ts≤65 °C−300 mW

Cre feedback capacitance IC=i

c= 0; VCB = 8 V; f = 1 MHz 0.5 −pF

fTtransition frequency IC= 15 mA; VCE = 8 V; f = 500 MHz 8 −GHz

GUM maximum unilateral power

gain IC= 15 mA; VCE =8V;

amb =25°C; f = 1 GHz 17 −dB

F noise ﬁgure Γs=Γopt; IC= 5 mA; VCE =8V;

amb =25°C; f = 1 GHz 1.3 −dB

Γs=Γopt; IC= 5 mA; VCE =8V;

amb =25°C; f = 2 GHz 2.2 −dB

Rev. 05 - 23 November 2007

2 of 14

NXP Semiconductors Product speciﬁcation

NPN 8 GHz wideband transistors BFG67; BFG67/X; BFG67/XR

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

Note

1. Ts is the temperature at the soldering point of the collector pin.

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

VCBO collector-base voltage open emitter −20 V

VCEO collector-emitter voltage open base −10 V

VEBO emitter-base voltage open collector −2.5 V

ICcollector current (DC) −50 mA

Ptot total power dissipation Ts≤65 °C; see Fig.3; note 1 −380 mW

Tstg storage temperature range −65 150 °C

Tjjunction temperature −175 °C

Fig.3 Power derating curve.

handbook, halfpage

0 50 100 200

400

300

100

200

MBC984 - 1

150

Ptot

(mW)

Ts(oC)

THERMAL CHARACTERISTICS

Note

1. Ts is the temperature at the soldering point of the collector pin.

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Rth j-s thermal resistance from junction to soldering point note 1 290 K/W

Rev. 05 - 23 November 2007

3 of 14

NXP Semiconductors Product speciﬁcation

NPN 8 GHz wideband transistors BFG67; BFG67/X; BFG67/XR

CHARACTERISTICS

Tj = 25 °C unless otherwise speciﬁed.

Note

1. GUM is the maximum unilateral power gain, assuming S12 is zero and

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

ICBO collector leakage current VCB =5V; I

E=0 −−50 nA

hFE DC current gain IC= 15 mA; VCE = 5 V 60 100 −

fTtransition frequency IC= 15 mA; VCE = 8 V; f = 500 MHz −8−GHz

Cccollector capacitance IE=i

e= 0; VCB = 8 V; f = 1 MHz −0.7 −pF

Ceemitter capacitance IC=i

c= 0; VEB = 0.5 V; f = 1 MHz −1.3 −pF

Cre feedback capacitance IC=i

c= 0; VCB = 8 V; f = 1 MHz −0.5 −pF

GUM maximum unilateral power

gain; note 1 IC= 15 mA; VCE =8V;

amb =25°C; f = 1 GHz −17 −dB

IC= 15 mA; VCE =8V;

amb =25°C; f = 2 GHz −10 −dB

F noise ﬁgure Γs=Γopt; IC= 5 mA; VCE =8V

amb =25°C; f = 1 GHz −1.3 −dB

Γs=Γopt; IC= 15 mA; VCE =8V;

amb =25°C; f = 1 GHz −1.7 −dB

IC= 5 mA; VCE =8V;

amb = 25°C; f = 2 GHz; ZS=60Ω−2.5 −dB

IC= 15 mA; VCE =8V;

amb =25°C; f = 2 GHz; ZS=60Ω−3−dB

GUM 10 S21 2

11 2

–()1S

22 2

–()

-------------------------------------------------------------- dB.log=

Rev. 05 - 23 November 2007

4 of 14

NXP Semiconductors Product speciﬁcation

NPN 8 GHz wideband transistors BFG67; BFG67/X; BFG67/XR

Fig.4 DC current gain as a function of collector

current.

VCE =5V.

handbook, halfpage

120

020 40

MBB301

I (mA)

Fig.5 Feedback capacitance as a function of

collector-base voltage.

IC=i

c= 0; f = 1 MHz.

handbook, halfpage

0.8

0.6

0.4

0.2

MBB302

81216

(pF)

VCB (V)

Fig.6 Transition frequency as a function of

collector current.

VCE = 8 V; Tamb =25°; f = 2 GHz.

handbook, halfpage

01020 40

MBB303

30 I (mA)

(GHz)

f10

Fig.7 Gain as a function of collector current.

VCE = 8 V; f = 1 GHz.

GUM = maximum unilateral power gain;

MSG = maximum stable gain;

Gmax = maximum available gain.

handbook, halfpage

gain

(dB)

IC (mA)

010 20 40

MBB304

MSG

GUM

max

Rev. 05 - 23 November 2007

5 of 14

NXP Semiconductors Product speciﬁcation

NPN 8 GHz wideband transistors BFG67; BFG67/X; BFG67/XR

Fig.8 Gain as a function of frequency.

VCE = 8 V; IC= 5 mA.

GUM = maximum unilateral power gain;

MSG = maximum stable gain;

Gmax = maximum available gain.

handbook, halfpage

010

MBB305

102103104

gain

(dB)

f (MHz)

GUM

MSG

Gmax

Fig.9 Gain as a function of frequency.

VCE = 8 V; IC=15mA.

UM = maximum unilateral power gain;

MSG = maximum stable gain;

Gmax = maximum available gain.

handbook, halfpage

010

MBB306

102103104

gain

(dB)

f (MHz)

GUM

MSG

Gmax

Fig.10 Gain as a function of frequency.

VCE = 8 V; IC= 30 mA.

GUM = maximum unilateral power gain;

MSG = maximum stable gain;

Gmax = maximum available gain.

handbook, halfpage

010

MBB307

102103104

gain

(dB)

f (MHz)

GUM

MSG

Gmax

Fig.11 Minimum noise figure as a function of

collector current.

VCE =8V.

handbook, halfpage

0100

MBB308

101

(dB)

I (mA)

f = 2 GHz

1 GHz

900 MHz

500 MHz

Rev. 05 - 23 November 2007

6 of 14

NXP Semiconductors Product speciﬁcation

NPN 8 GHz wideband transistors BFG67; BFG67/X; BFG67/XR

Fig.12 Minimum noise figure as a function of

frequency.

VCE =8V.

handbook, halfpage

MBB309

(dB)

f (MHz) 104

103

102

5 mA

I = 30 mA

15 mA

BFG67/X

Noise Parameters

(MHz) VCE

(V) IC

(mA)

500 8 5

Fmin

(dB) Gamma (opt) Rn/50

(mag) (ang)

0.95 0.455 33.8 0.288

Fig.13 Noise circle figure.

ZO=50Ω.

0.2

0.5

∞

0.2

0.5

+ j

− j

MBB317

stability

circle

unstable region

Fmin=0.95 dB

OPT

10.2 10520.5

1.5 dB

2 dB

3 dB

Rev. 05 - 23 November 2007

7 of 14

NXP Semiconductors Product speciﬁcation

NPN 8 GHz wideband transistors BFG67; BFG67/X; BFG67/XR

BFG67/X

Noise Parameters

(MHz) VCE

(V) IC

(mA)

1000 8 5

Fmin

(dB) Gamma (opt) Rn/50

(mag) (ang)

1.3 0.375 65.9 0.304

Fig.14 Noise circle figure.

ZO=50Ω.

0.2

0.5

∞

0.2

0.5

+ j

− j

MBB316

Fmin

2 dB

stability

circle

unstable

region

=1.3 dB

OPT

0.2 1 10520.5

3 dB

4 dB

BFG67/X

Noise Parameters

Average Gain Parameters

(MHz) VCE

(V) IC

(mA)

2000 8 5

Fmin

(dB) Gamma (opt) Rn/50

(mag) (ang)

2.2 0.391 136.5 0.184

GMAX

(dB) Gamma (max)

(mag) (ang)

12 0.839 −170

Fig.15 Noise circle figure.

ZO=50Ω.

0.2

0.5

∞

0.2

0.5

+ j

– j

MBB315

101520.2 0.5

3 dB 4 dB

5 dB

OPT

Fmin=2.2 dB

Gmax

10 dB

9 dB

8 dB

=12dB 11 dB

Rev. 05 - 23 November 2007

8 of 14

NXP Semiconductors Product speciﬁcation

NPN 8 GHz wideband transistors BFG67; BFG67/X; BFG67/XR

Fig.16 Common emitter input reflection coefficient (S11).

VCE = 8 V; IC= 15 mA; ZO=50Ω.

handbook, full pagewidth

MBB314

0.2

0.5

∞

0.2

0.5

+ j

− j

3 GHz

10.2 10520.5

40 MHz

handbook, full pagewidth

MBB313

+ϕ

−ϕ

0°

30°

60°

90°

120°

150°

180°

150°

120°

90°

60°

30°

40 20 3 GHz

40 MHz

50 30 10

Fig.17 Common emitter forward transmission coefficient (S21).

VCE = 8 V; IC= mA; ZO=50Ω.

Rev. 05 - 23 November 2007

9 of 14

NXP Semiconductors Product speciﬁcation

NPN 8 GHz wideband transistors BFG67; BFG67/X; BFG67/XR

Fig.18 Common emitter reverse transmission coefficient (S12).

VCE = 8 V; IC= 15 mA.

handbook, full pagewidth

MBB312

0.2

0.5

∞

0.2

0.5

+ j

− j

10.2 10520.5

3 GHz

40 MHz

Fig.19 Common emitter output reflection coefficient (S22).

handbook, full pagewidth

MBB311

+ϕ

−ϕ

0°

30°

60°

90°

120°

150°

180°

150°

120°

90°

60°

30°

3 GHz

0.4 0.2 40 MHz

0.5 0.3 0.1

VCE = 8 V; IC= 15 mA.

Rev. 05 - 23 November 2007

10 of 14

NXP Semiconductors Product speciﬁcation

NPN 8 GHz wideband transistors BFG67; BFG67/X; BFG67/XR

PACKAGE OUTLINES

UNIT A

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC EIAJ

mm 1.1

0.9

max

0.1

0.88

0.78

0.15

0.09

3.0

2.8

1.4

1.2

HEywvQ

2.5

2.1 0.45

0.15 0.55

0.45

1.9

1.7

0.1 0.10.2

0.48

0.38

DIMENSIONS (mm are the original dimensions)

SOT143B 97-02-28

0 1 2 mm

scale

Plastic surface mounted package; 4 leads SOT143B

vMA

detail X

Rev. 05 - 23 November 2007

11 of 14

NXP Semiconductors Product speciﬁcation

NPN 8 GHz wideband transistors BFG67; BFG67/X; BFG67/XR

UNIT A

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC EIAJ

mm 1.1

0.9

max

0.1

0.88

0.78

0.15

0.09

3.0

2.8

1.4

1.2

HEywvQ

2.5

2.1 0.55

0.25 0.45

0.25

1.9

1.7

0.1 0.10.2

0.48

0.38

DIMENSIONS (mm are the original dimensions)

SOT143R 97-03-10

0 1 2 mm

scale

Plastic surface mounted package; reverse pinning; 4 leads SOT143R

vMA

detail X

Rev. 05 - 23 November 2007

12 of 14

NXP Semiconductors BFG67; BFG67/X; BFG67/XR

NPN 8 GHz wideband transistors

Legal information

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[1] Please consult the most recently issued document before initiating or completing a design.

[2] The term ‘short data sheet’ is explained in section “Deﬁnitions”.

[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status

information is available on the Internet at URL http://www.nxp.com.

Deﬁnitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modiﬁcations or additions. NXP Semiconductors does not give any

representations or warranties as to the accuracy or completeness of

information included herein and shall have no liability for the consequences of

use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet

with the same product type number(s) and title. A short data sheet is intended

for quick reference only and should not be relied upon to contain detailed and

full information. For detailed and full information see the relevant full data

sheet, which is available on request via the local NXP Semiconductors sales

ofﬁce. In case of any inconsistency or conﬂict with the short data sheet, the

full data sheet shall prevail.

Disclaimers

General — Information in this document is believed to be accurate and

reliable. However, NXP Semiconductors does not give any representations or

warranties, expressed or implied, as to the accuracy or completeness of such

information and shall have no liability for the consequences of use of such

information.

Right to make changes — NXP Semiconductors reserves the right to make

changes to information published in this document, including without

limitation speciﬁcations and product descriptions, at any time and without

notice. This document supersedes and replaces all information supplied prior

to the publication hereof.

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authorized or warranted to be suitable for use in medical, military, aircraft,

space or life support equipment, nor in applications where failure or

malfunction of an NXP Semiconductors product can reasonably be expected

to result in personal injury, death or severe property or environmental

damage. NXP Semiconductors accepts no liability for inclusion and/or use of

NXP Semiconductors products in such equipment or applications and

therefore such inclusion and/or use is at the customer’s own risk.

Applications — Applications that are described herein for any of these

products are for illustrative purposes only. NXP Semiconductors makes no

representation or warranty that such applications will be suitable for the

speciﬁed use without further testing or modiﬁcation.

Limiting values — Stress above one or more limiting values (as deﬁned in

the Absolute Maximum Ratings System of IEC 60134) may cause permanent

damage to the device. Limiting values are stress ratings only and operation of

the device at these or any other conditions above those given in the

Characteristics sections of this document is not implied. Exposure to limiting

values for extended periods may affect device reliability.

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at http://www.nxp.com/proﬁle/terms, including those pertaining to warranty,

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Notice: All referenced brands, product names, service names and trademarks

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Contact information

For additional information, please visit: http://www.nxp.com

For sales ofﬁce addresses, send an email to: salesaddresses@nxp.com

Document status[1][2] Product status[3] Deﬁnition

Objective [short] data sheet Development This document contains data from the objective speciﬁcation for product development.

Preliminary [short] data sheet Qualiﬁcation This document contains data from the preliminary speciﬁcation.

Product [short] data sheet Production This document contains the product speciﬁcation.

Rev. 05 - 23 November 2007

13 of 14

NXP Semiconductors BFG67; BFG67/X; BFG67/XR

NPN 8 GHz wideband transistors

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

Date of release: 23 November 2007

Document identifier: BFG67_X_XR_N_5

Please be aware that important notices concerning this document and the product(s)

described herein, have been included in section ‘Legal information’.

Revision history

Table 1. Revision history

Document ID Release date Data sheet status Change notice Supersedes

BFG67_X_XR_N_5 20071123 Product data sheet - BFG67_X_XR_4

Modiﬁcations: •Page 2; Table Marking code; row 1 and 2 code changed

BFG67_X_XR_4

(9397 750 04349) 19981002 Product speciﬁcation - BFG67_SERIES_3

BFG67_SERIES_3 19950901 Product speciﬁcation - BFG67_SERIES_2

BFG67_SERIES_2 - Product speciﬁcation - BFG67_SERIES_1

BFG67_SERIES_1 - - - -