©2005 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
May 2005
RMPA2271 Rev. B
RMPA2271 WCDMA/UMTS Power Edge™ Power Amplifier Module with Integrated Power Detector
PRELIMINARY
RMPA2271
WCDMA/UMTS Power Edge™ Power Amplifier
Module with Integrated Power Detector
Features
Temperature compensated, integrated power detector with
>20dB dynamic range
41% WCDMA efficiency at +28dBm average output power
1920–1980MHz
Meets UMTS/WCDMA and HSDPA performance
requirements
Compact Lead-free compliant LCC package–
(3.0 x 3.0 x 1.0 mm nominal)
Single positive-supply operation and low power and
shutdown modes
Low Vref (2.85V) compatible with advanced handset
chipsets
Internally matched to 50
and DC blocked RF
input/output
General Description
The RMPA2271 Power Amplifier Module (PAM) is Fairchild’s
latest innovation in 50
matched, surface mount modules
targeting WCDMA/UMTS applications. Answering the call for
integrated Power Detection, the RMPA2271 offers the ability to
measure power output over a 20dB range. This feature
eliminates the need of an external power detector and lossy
directional coupler, improving system perfomance and reducing
overall cost. Simple two-state Vmode control is all that is
needed to change the PA optimization from high power to low
power mode to minimize current usage. The 3 x 3 x 1.0mm LCC
package fits into the tightest spaces available on handset
boards and is footprint compatible with existing 3 x 3mm LCC
power amplifiers. The multi-stage GaAs Microwave Monolithic
Integrated Circuit (MMIC) is manufactured using Fairchild’s
InGaP Heterojunction Bipolar Transistor (HBT) process.
Device
Functional Block Diagram
4
3
2
18
7
6
5
DC Bias Control
4
3
2
18
7
6
5
Vcc2
RF OUT
GND
Vref
RF IN
Vcc1 MMIC
Input
Match
Output
Match
Vmode
Pdet
Power Detector
2
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RMPA2271 Rev. B
RMPA2271 WCDMA/UMTS Power Edge™ Power Amplifier Module with Integrated Power Detector
PRELIMINARY
Absolute Ratings
1
Note:
1. No permanent damage with only one parameter set at extreme limit. Other parameters set to typical values.
Electrical Characteristics (1920 to 1980 MHz)
1
Notes:
1. All parameters met at T
C
= +25°C, V
CC
= +3.4V, V
ref
= 2.85V and load VSWR
1.2:1, unless otherwise noted.
Symbol Parameter Ratings Units
V
CC1
, V
CC2
Supply Voltages 5.0 V
V
ref
Reference Voltage 2.6 to 3.5 V
V
mode
Power Control Voltage 3.5 V
P
IN
RF Input Power +10 dBm
T
STG
Storage Temperature -55 to +150 °C
Symbol Parameter Min Typ Max Units Comments
f Operating Frequency 1920 1980 MHz
WCDMA Operation
Gp Power Gain 27 dB Po = +28dBm, Vmode = 0V
26 dB Po = +16dBm, Vmode
2.0V
Po Linear Output Power 28 dBm Vmode = 0V
16 dBm Vmode
2.0V
PAEd PAEd (digital) @ +28dBm 41 % Vmode = 0V
PAEd (digital) @ +16dBm 9 % Vmode
2.0V
PAEd (digital) @ +16dBm 25 % Vmode
2.0V, Vcc = 1.4V
Itot High Power Total Current 450 mA Po = +28dBm, Vmode = 0V
Low Power Total Current 130 mA Po = +16dBm, Vmode
2.0V
P
det
Detector Output 1.4 V Po = +28dBm, Vmode
=
0V
0.3 V Po = +16dBm, Vmode
2.0V
Adjacent Channel Leakage
Ratio WCDMA Modulation 3GPP
3.2 03-00 DPCCH+1 DCDCH
ACLR1 ±5.00MHz Offset
1920–1980MHz
-40 dBc Po = +28dBm, Vmode = 0V
-42 dBc Po = +16dBm, Vmode
2.0V
ACLR2 ±10.00MHz Offset
1920–1980MHz
-54 dBc Po = +28dBm, Vmode = 0V
-66 dBc Po = +16dBm, Vmode
2.0V
General Characteristics
VSWR Input Impedance 2.0:1
NF Noise Figure 4 dB
Rx No Receive Band Noise Power -142 dBm/Hz Po
+28dBm, 2110 to 2170MHz
2fo – 5fo Harmonic Suppression
3
-50 dBc Po
+28dBm
S Spurious Outputs
2, 3
-60 dBc Load VSWR
5.0:1
Ruggedness with Load
Mismatch
3
10:1 No permanent damage
Tc Case Operating Temperature -30 85 °C
DC Characteristics
Iccq Quiescent Current 50 mA Vmode
2.0V
Iref Reference Current 7 mA Po
+28dBm
Icc(off) Shutdown Leakage Current 1 5 µA No applied RF signal
3
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RMPA2271 Rev. B
RMPA2271 WCDMA/UMTS Power Edge™ Power Amplifier Module with Integrated Power Detector
PRELIMINARY
Typical Characteristics
Frequency and Temperature dependency
Power Detector dependency
RMPA2271 3x3 WCDMA PAM with Power Detector
Vcc=3.4V, Vref=2.85V, Vmode=0V, Pout=28dBm
RMPA2271 3x3 WCDMA PAM with Power Detector
Vcc=3.4V, Vref=2.85V, Vmode=0V, Pout=28dBm
RMPA2271 3x3 WCDMA PAM with Power Detector
Vcc=3.4V, Vref=2.85V, Vmode=0V, Pout=28dBm
RMPA2271 3x3 WCDMA PAM with Power Detector
Vcc=3.4V, Vref=2.85V, Vmode=0V, Pout=28dBm
22
23
24
25
26
27
28
29
30
31
32
19 2 0 19 5 0 19 8 0
Fr e que ncy (MHz)
Gain (dB)
T=2 5°C
T=8 5°C
T=- 30 °C
35
36
37
38
39
40
41
42
43
44
45
1920 1950 1980
Fr e quency (MHz)
PAE (%)
T=25°C
T=85°C
T=-30°C
-50
-48
-46
-44
-42
-40
-38
-36
-34
-32
-30
19 2 0 19 50 1980
Fre quency (MHz)
ACLR1 (dBc)
T=25°C
T=85°C
T=-30°C
-60
-58
-56
-54
-52
-50
-48
-46
-44
-42
-40
19 2 0 19 50 1980
Fre quency (MHz)
ACLR2 (dBc)
T=25°C
T=85°C
T=-30 °C
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
-10 -5 0 51015202530
Pout (dBm)
Pdet (Vdc)
Vref=2.75V
Vref=2.85V
Vref=2.95V
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
-10 -5 0 51015202530
Pout (dBm )
Pdet (Vdc)
T=25°C
T= 85°C
T=-30°C
RMPA2271 3x3 WCDMA PAM with Power Detector
Vcc=3.4V, Vmode=0V, Freq=1950MHz, Temp=25°C
RMPA2271 3x3 WCDMA PAM with Power Detector
Vcc=3.4V, Vmode=0V, Freq=1950MHz, Vref=2.85V
4
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RMPA2271 Rev. B
RMPA2271 WCDMA/UMTS Power Edge™ Power Amplifier Module with Integrated Power Detector
PRELIMINARY
Application Note
Due to the varying amplitude envelope of WCDMA signal, a filter is required at the Pdet pin in order to minimize the ripple noise of the
detector output voltage (Pdet). RMPA2271 has no integrated filter for the Pdet pin. Therefore, an external low-pass filter, comprising a
shunt resistor (R) and a shunt capacitor (C), is required to detect the WCDMA signal properly. The filter bandwidth is determined by
the RC time constant of the filter, and can be reduced by increasing the values of the resistor and/or capacitor. A narrower filter band-
width has the advantage of lower voltage ripple noise, but it comes at the expense of increased response time. A tradeoff needs to be
made between the ripple noise and response time for the optimal system performance.
The detector output voltage (Pdet) range can be adjusted by the value of the external shunt resistor (R). The following figure shows
the dependence of Pdet voltage as a function of R. The maximum Pdet voltage can be increased by raising the value of R. This pro-
vides the added flexibility to handset designers to change the detector range to meet the system requirements.
It is recommended that the value of the resistor R is first determined depending on the desired detector output voltage range. Then
the value of the shunt capacitor C is selected for the required detector output voltage ripple level, and response time.
2
8
7
6
5
SMA1
RF IN
Vcc2
Pdet
(package
base)
50 ohm
TRL
50 ohm
TRL
3.3 µF
Vref
3.3 µF1000 pF
1000 pF
1000 pF
0.1 µF
3
Vmode
C
R
9
4
SMA2
RF OUT
1
Vcc1
2271
XYTT
Z
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
-10 -5 0 51015202530
Pout (dBm)
Pdet (Vdc)
R=9.1k Ohm
R=5.1k Ohm
R=2.4k Ohm
RMPA2271 3x3 WCDMA PAM with Power Detector
Vcc=3.4V, Vref=2.85V, Vmode=0V, Freq=1950MHz, Temp=25°C
5
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RMPA2271 Rev. B
RMPA2271 WCDMA/UMTS Power Edge™ Power Amplifier Module with Integrated Power Detector
PRELIMINARY
Efficiency Improvement Applications
In addition to high-power/low-power bias modes, the efficiency of the PA module can be significantly increased at backed-off RF
power levels by dynamically varying the supply voltage (Vcc) applied to the amplifier. Since mobile handsets and power amplifiers fre-
quently operate at 10-20 dB back-off, or more, from maximum rated linear power, battery life is highly dependent on the DC power
consumed at antenna power levels in the range of 0 to +16dBm. The reduced demand on transmitted RF power allows the PA supply
voltage to be reduced for improved efficiency, while still meeting linearity requirements for WCDMA modulation with excellent margin.
High-efficiency DC-DC converters are now available to implement switched-voltage operation.
With the PA module in low-power mode (Vmode = +2.0V) at+16dBm output power and supply voltages reduced from 3.4V nominal
down to 1.2V, power-added efficiency is more than doubled from 9.5 percent to nearly 25 percent (Vcc = 1.2V) while maintaining a
typical ACLR1 of –40dBc and ACLR2 of less than –54dBc. Operation at even lower levels of Vcc supply voltage are possible with a
further restriction on the maximum RF output power.
Recommended Operating Conditions
DC Turn On Sequence:
1. Vcc1 = Vcc2 = 3.4V (typical)
2. Vref = 2.85V (typical)
3. High-Power: Vmode = 0V (Pout > 16dBm)
Low-Power: Vmode = 2.0V (Pout < 16dBm)
Symbol Parameter Min Typ Max Units
f Operating Frequency 1920 1980 MHz
Vcc1, Vcc2 Supply Voltage 3.0 3.4 4.2 V
Vref Reference Voltage
(Operating)
(Shutdown)
2.7
0
2.85 3.1
0.5
V
V
Vmode Bias Control Voltage
(Low-Power)
(High-Power)
1.8
0
2.0 3.0
0.5
V
V
Pout Linear Output Power
(High-Power)
(Low-Power)
+28
+16
dBm
dBm
Tc Case Operating Temperature -30 +85 °C
6
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RMPA2271 Rev. B
RMPA2271 WCDMA/UMTS Power Edge™ Power Amplifier Module with Integrated Power Detector
PRELIMINARY
Evaluation Board Layout
Material List
Evaluation Board Schematic
Qty Item No. Part Number Description Vendor
11F100088 PC, Board Fairchild
22#142-0701-841 SMA Connector Johnson
63#S1322-XX-ND RT Angle SGL M Header Digikey
REF 4 Assembly, RMPA2271 Fairchild
35GRM39X7R102K50V 1000 pF Capacitor (0603) Murata
35 (ALT) ECJ-1VB1H102K 1000 pF Capacitor (0603) Panasonic
26C3215X5R1A335M 3.3 µF Capacitor (1206) TDK
17GRM39Y5V104Z16V 0.1 µF Capacitor (0603) Murata
17 (ALT) ECJ-1VB1C104K 0.1 µF Capacitor (0603) Panasonic
18GRM1885C1H101JA01D 100 pF Capacitor (0603) Murata
19RCI-0603-5101J 5.1 K
Resistor (0603) IMS
A/R 10 SN63 Solder Paste Indium Corp.
A/R 11 SN96 Solder Paste Indium Corp.
1
5
9
8
7
54
6
3
6
2
5
2
8
7
6
5
SMA1
RF IN
Vcc2
Pdet
(package
base)
50 ohm
TRL
50 ohm
TRL
3.3 µF
Vref
3.3 µF1000 pF
1000 pF
1000 pF
0.1 µF
3
Vmode
100 pF
5.1K
9
4
SMA2
RF OUT
1
Vcc1
2271
XYTT
Z
7
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RMPA2271 Rev. B
RMPA2271 WCDMA/UMTS Power Edge™ Power Amplifier Module with Integrated Power Detector
PRELIMINARY
Package Outline
Signal Description
Pin # Signal Name Description
1 Vcc1 Supply Voltage to Input Stage
2 RF In RF Input Signal
3 Vmode High Power/Low Power Switch
4Vref Reference Voltage
5P
DET
Power detector output voltage
6 GND Ground
7 RF Out RF Output Signal
8 Vcc2 Supply Voltage to Output Stage
9 GND Ground
TOP VIEW
2271
XYTT
Z
2271
XYTT
Z
FRONT VIEW
BOTTOM VIEW
1
1
3.00
1.10mm MAX.
BACK SIDE SODER MASK
SEE DETAIL A
0.85mm
2.60mm
0.20mm
0.40mm
0.40mm
0.10mm
0.10mm
DETAIL A
TYP.
0.40mm
1.30mm
4X R.25mm
mm SQ.
I/O 1 INDICATOR
+.100
–.050
2
1
2
2
3
3
4
4
8
8
7
7
6
6
5
5
8
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RMPA2271 Rev. B
RMPA2271 WCDMA/UMTS Power Edge™ Power Amplifier Module with Integrated Power Detector
PRELIMINARY
Applications Information
CAUTION: THIS IS AN ESD SENSITIVE DEVICE.
Precautions to Avoid Permanent Device Damage:
Cleanliness: Observe proper handling procedures to ensure clean devices and PCBs. Devices should remain in their original packaging
until component placement to ensure no contamination or damage to RF, DC and ground contact areas.
Device Cleaning: Standard board cleaning techniques should not present device problems provided that the boards are properly dried
to remove solvents or water residues.
Static Sensitivity: Follow ESD precautions to protect against ESD damage:
–A properly grounded static-dissipative surface on which to place devices.
Static-dissipative floor or mat.
–A properly grounded conductive wrist strap for each person to wear while handling devices.
General Handling: Handle the package on the top with a vacuum collet or along the edges with a sharp pair of bent tweezers. Avoiding
damaging the RF, DC, and ground contacts on the package bottom. Do not apply excessive pressure to the top of the lid.
Device Storage: Devices are supplied in heat-sealed, moisture-barrier bags. In this condition, devices are protected and require no
special storage conditions. Once the sealed bag has been opened, devices should be stored in a dry nitrogen environment.
Device Usage:
Fairchild recommends the following procedures prior to assembly.
Dry-bake devices at 125°C for 24 hours minimum. Note: The shipping trays cannot withstand 125°C baking temperature.
Assemble the dry-baked devices within 7 days of removal from the oven.
During the 7-day period, the devices must be stored in an environment of less than 60% relative humidity and a maximum temperature
of 30°C
If the 7-day period or the environmental conditions have been exceeded, then the dry-bake procedure must be repeated.
9
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RMPA2271 Rev. B
RMPA2271 WCDMA/UMTS Power Edge™ Power Amplifier Module with Integrated Power Detector
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY
ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT
CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Formative or
In Design
First Production
Full Production
Not In Production
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