TIP31G, TIP31AG, TIP31BG, TIP31CG (NPN), TIP32G,TIP32AG, TIP32BG, TIP32CG(PNP) Complementary Silicon Plastic Power Transistors www.onsemi.com Designed for use in general purpose amplifier and switching applications. Features * High Current Gain - Bandwidth Product * Compact TO-220 Package * These Devices are Pb-Free and are RoHS Compliant* 3 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 40-60-80-100 VOLTS, 40 WATTS PNP MAXIMUM RATINGS Rating Symbol Collector - Emitter Voltage TIP31G, TIP32G TIP31AG, TIP32AG TIP31BG, TIP32BG TIP31CG, TIP32CG Value Unit VCEO 1 BASE VCB Emitter-Base Voltage VEB 5.0 Vdc IC 3.0 Adc Collector Current - Peak Vdc 40 60 80 100 ICM 5.0 Adc IB 1.0 Adc Total Power Dissipation @ TC = 25C Derate above 25C PD Total Power Dissipation @ TA = 25C Derate above 25C PD Unclamped Inductive Load Energy (Note 1) 40 0.32 W W/C 2.0 0.016 W W/C E 32 mJ TJ, Tstg - 65 to + 150 C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction-to-Ambient RqJA 62.5 C/W Thermal Resistance, Junction-to-Case RqJC 3.125 C/W *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. September, 2015 - Rev. 16 3 EMITTER 3 EMITTER TO-220 CASE 221A STYLE 1 1 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. IC = 1.8 A, L = 20 mH, P.R.F. = 10 Hz, VCC = 10 V, RBE = 100 W (c) Semiconductor Components Industries, LLC, 2015 1 BASE 4 Base Current Operating and Storage Junction Temperature Range COLLECTOR 2,4 Vdc 40 60 80 100 Collector-Base Voltage TIP31G, TIP32G TIP31AG, TIP32AG TIP31BG, TIP32BG TIP31CG, TIP32CG Collector Current - Continuous NPN COLLECTOR 2,4 1 2 3 MARKING DIAGRAM TIP3xxG AYWW TIP3xx xx A Y WW G = Device Code = 1, 1A, 1B, 1C, 2, 2A, 2B, 2C, = Assembly Location = Year = Work Week Pb-Free Package ORDERING INFORMATION See detailed ordering and shipping information on page 6 of this data sheet. Publication Order Number: TIP31A/D TIP31G, TIP31AG, TIP31BG, TIP31CG (NPN), TIP32G, TIP32AG, TIP32BG, TIP32CG (PNP) ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage (Note 2) (IC = 30 mAdc, IB = 0) TIP31G, TIP32G TIP31AG, TIP32AG TIP31BG, TIP32BG TIP31CG, TIP32CG VCEO(sus) Collector Cutoff Current (VCE = 30 Vdc, IB = 0) TIP31G, TIP32G, TIP31AG, TIP32AG (VCE = 60 Vdc, IB = 0) TIP31BG, TIP31CG, TIP32BG, TIP32CG ICEO Collector Cutoff Current (VCE = 40 Vdc, VEB = 0) TIP31G, TIP32G (VCE = 60 Vdc, VEB = 0) TIP31AG, TIP32AG (VCE = 80 Vdc, VEB = 0) TIP31BG, TIP32BG (VCE = 100 Vdc, VEB = 0) TIP31CG, TIP32CG ICES Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) IEBO Vdc 40 60 80 100 - - - - mAdc - 0.3 - 0.3 mAdc - 200 - 200 - 200 - 200 - 1.0 25 10 - 50 - 1.2 - 1.8 3.0 - 20 - mAdc ON CHARACTERISTICS (Note 2) hFE DC Current Gain (IC = 1.0 Adc, VCE = 4.0 Vdc) (IC = 3.0 Adc, VCE = 4.0 Vdc) Collector-Emitter Saturation Voltage (IC = 3.0 Adc, IB = 375 mAdc) VCE(sat) Base-Emitter On Voltage (IC = 3.0 Adc, VCE = 4.0 Vdc) VBE(on) - Vdc Vdc DYNAMIC CHARACTERISTICS Current-Gain - Bandwidth Product (IC = 500 mAdc, VCE = 10 Vdc, ftest = 1.0 MHz) fT Small-Signal Current Gain (IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 kHz) hfe MHz - Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%. www.onsemi.com 2 TIP31G, TIP31AG, TIP31BG, TIP31CG (NPN), TIP32G, TIP32AG, TIP32BG, TIP32CG (PNP) 40 4.0 TC 30 3.0 20 2.0 TA 10 1.0 0 0 0 40 20 60 80 100 140 120 160 T, TEMPERATURE (C) Figure 1. Power Derating TURN-ON PULSE APPROX +11 V VCC RC SCOPE Vin Vin 0 RB VEB(off) t1 Cjd << Ceb t3 APPROX +11 V t1 7.0 ns 100 < t2 < 500 ms t3 < 15 ns Vin t2 TURN-OFF PULSE -4.0 V DUTY CYCLE 2.0% APPROX - 9.0 V RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS. Figure 2. Switching Time Equivalent Circuit 2.0 IC/IB = 10 TJ = 25C 1.0 0.7 0.5 t, TIME (ms) PD, POWER DISSIPATION (WATTS) TC TA tr @ VCC = 30 V 0.3 tr @ VCC = 10 V 0.1 0.07 0.05 0.03 0.02 0.03 td @ VEB(off) = 2.0 V 0.05 0.1 0.3 0.5 1.0 IC, COLLECTOR CURRENT (AMP) Figure 3. Turn-On Time www.onsemi.com 3 3.0 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) TIP31G, TIP31AG, TIP31BG, TIP31CG (NPN), TIP32G, TIP32AG, TIP32BG, TIP32CG (PNP) 1.0 0.7 0.5 D = 0.5 0.3 0.2 0.2 0.1 0.1 0.07 0.05 ZqJC(t) = r(t) RqJC RqJC(t) = 3.125C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) ZqJC(t) 0.05 0.02 0.03 0.02 0.01 0.01 0.01 SINGLE PULSE 0.02 0.05 1.0 0.2 1.0 0.5 2.0 5.0 t, TIME (ms) 10 20 50 P(pk) t1 t2 DUTY CYCLE, D = t1/t2 100 200 500 1.0 k Figure 4. Thermal Response IC, COLLECTOR CURRENT (AMP) 10 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 5 is based on TJ(pk) = 150C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) 150C. TJ(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 5.0 100ms 5.0ms 2.0 1.0 0.5 0.2 0.1 5.0 SECONDARY BREAKDOWN LIMITED @ TJ 150C THERMAL LIMIT @ TC = 25C (SINGLE PULSE) BONDING WIRE LIMIT TIP31A, TIP32A CURVES APPLY TIP31B, TIP32B BELOW RATED VCEO TIP31C, TIP32C 1.0ms 10 20 50 100 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 5. Active Region Safe Operating Area 300 ts t, TIME (s) 1.0 tf @ VCC = 30 V 0.7 0.5 0.3 0.2 IB1 = IB2 IC/IB = 10 ts = ts - 1/8 tf TJ = 25C TJ = +25C 200 CAPACITANCE (pF) 3.0 2.0 tf @ VCC = 10 V 0.1 0.07 0.05 0.03 0.03 100 Ceb 70 50 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 IC, COLLECTOR CURRENT (AMP) 2.0 30 0.1 3.0 Figure 6. Turn-Off Time Ccb 10 0.2 0.3 0.5 1.0 2.0 3.0 5.0 VR, REVERSE VOLTAGE (VOLTS) Figure 7. Capacitance www.onsemi.com 4 20 30 40 TIP31G, TIP31AG, TIP31BG, TIP31CG (NPN), TIP32G, TIP32AG, TIP32BG, TIP32CG (PNP) hFE, DC CURRENT GAIN 300 100 70 50 TJ = 150C VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 500 VCE = 2.0 V 25C -55C 30 10 7.0 5.0 0.5 0.7 1.0 0.03 0.05 0.07 0.1 0.3 IC, COLLECTOR CURRENT (AMP) 3.0 2.0 TJ = 25C 1.6 IC = 0.3 A 1.2 0.4 0 1.0 V, TEMPERATURE COEFFICIENTS (mV/C) VBE @ VCE = 2.0 V 0.4 VCE(sat) @ IC/IB = 10 0 0.003 0.005 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (A) 100 10-1 10-2 500 1000 *APPLIES FOR IC/IB hFE/2 TJ = -65C TO +150C +2.0 +1.5 +1.0 +0.5 *qVC FOR VCE(sat) 0 -0.5 -1.0 qVB FOR VBE -1.5 -2.0 -2.5 0.003 0.005 0.01 0.02 0.05 0.1 0.2 0.3 0.5 1.0 IC, COLLECTOR CURRENT (AMP) Figure 10. "On" Voltages Figure 11. Temperature Coefficients 103 101 10 20 50 100 200 IB, BASE CURRENT (mA) IC, COLLECTOR CURRENT (AMPS) R BE , EXTERNAL BASE-EMITTER RESISTANCE (OHMS) V, VOLTAGE (VOLTS) VBE(sat) @ IC/IB = 10 0.6 102 5.0 +2.5 TJ = 25C 1.0 0.2 2.0 Figure 9. Collector Saturation Region 1.4 0.8 3.0 A 0.8 Figure 8. DC Current Gain 1.2 1.0 A VCE = 30 V TJ = 150C 100C REVERSE FORWARD 25C 10-3 -0.4 -0.3 -0.2 -0.1 ICES 0 +0.1 +0.2 +0.3 +0.4 +0.5 +0.6 2.0 3.0 107 VCE = 30 V IC = 10 x ICES 106 IC ICES 105 104 IC = 2 x ICES 103 (TYPICAL ICES VALUES OBTAINED FROM FIGURE 12) 102 20 40 60 80 100 120 140 160 VBE, BASE-EMITTER VOLTAGE (VOLTS) TJ, JUNCTION TEMPERATURE (C) Figure 12. Collector Cut-Off Region Figure 13. Effects of Base-Emitter Resistance www.onsemi.com 5 TIP31G, TIP31AG, TIP31BG, TIP31CG (NPN), TIP32G, TIP32AG, TIP32BG, TIP32CG (PNP) ORDERING INFORMATION Device Package Shipping TIP31G TO-220 (Pb-Free) 50 Units / Rail TIP31AG TO-220 (Pb-Free) 50 Units / Rail TIP31BG TO-220 (Pb-Free) 50 Units / Rail TIP31CG TO-220 (Pb-Free) 50 Units / Rail TIP32G TO-220 (Pb-Free) 50 Units / Rail TIP32AG TO-220 (Pb-Free) 50 Units / Rail TIP32BG TO-220 (Pb-Free) 50 Units / Rail TIP32CG TO-220 (Pb-Free) 50 Units / Rail www.onsemi.com 6 TIP31G, TIP31AG, TIP31BG, TIP31CG (NPN), TIP32G, TIP32AG, TIP32BG, TIP32CG (PNP) PACKAGE DIMENSIONS TO-220 CASE 221A-09 ISSUE AH -T- B SEATING PLANE C F T S 4 DIM A B C D F G H J K L N Q R S T U V Z A Q 1 2 3 U H K Z L R V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. J G D N INCHES MIN MAX 0.570 0.620 0.380 0.415 0.160 0.190 0.025 0.038 0.142 0.161 0.095 0.105 0.110 0.161 0.014 0.024 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 STYLE 1: PIN 1. 2. 3. 4. MILLIMETERS MIN MAX 14.48 15.75 9.66 10.53 4.07 4.83 0.64 0.96 3.61 4.09 2.42 2.66 2.80 4.10 0.36 0.61 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ----2.04 BASE COLLECTOR EMITTER COLLECTOR ON Semiconductor and the are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81-3-5817-1050 www.onsemi.com 7 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative TIP31A/D