1
Design-For-Test Analysis
of a Buffered SDRAM DIMM
Sri Jandhyala and Adam Ley
SCTA027
Reprinted with permission from Proceedings of International Workshop on Memory Technology, Design and Testing,
Singapore, August 13–14, 1996.
1996 IEEE
2
IMPORTANT NOTICE
T exas Instruments (TI) reserves the right to make changes to its products or to discontinue any semiconductor
product or service without notice, and advises its customers to obtain the latest version of relevant information
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TI warrants performance of its semiconductor products and related software to the specifications applicable
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Certain applications using semiconductor products may involve potential risks of death, personal injury, or
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TI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED
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Copyright 1996, Texas Instruments Incorporated
iii
Contents
Title Page
Abstract 1. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1 Introduction 1. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
2 Module Construction 1. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
3 Module Function 2. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
4 Taxonomy of Defects 3. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
5 Fault Models 6. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
6 Test Methodologies 6. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
7 Card-Edge Test (Module Without DFT) 6. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
8 Module DFT 7. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
9 In-Circuit Test 7. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
10 Boundary-Scan Test 9. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
10.1 Boundary Scan at Register and Clock Driver 9. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
10.2 Boundary Scan at Register Only 9. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
10.3 Boundary Scan at SDRAM ICs 9. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
10.4 Boundary Scan at Buffer 9. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
10.5 Boundary Scan: Beyond Manufacturing Test 9. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
11 Comparative Study 10. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
12 Conclusion 10. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
References 11. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
List of Tables
Table Title Page
1 Summary of Module Construction 2. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
2 Node/Solder-Joint Matrix W ith Card-Edge and In-Circuit Test Fault Classification 4. . . . . . . . . . . . . . . . . . . . . . . . .
3 Defined Solder -Joint Fault Model 6. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
4 Card-Edge Test Fault Classification 7. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
5 In-Circuit Test Accessibility Classification 8. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
6 In-Circuit Test Fault Classification 8. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
7 Comparison of Test Methodologies 10. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1
Abstract
This paper presents a design-for-test (DFT) analysis of a buffered synchronous dynamic random-access memory
(SDRAM) dual in-line memory module (DIMM). The analysis is restricted to board-level manufacturing faults. The test
problem is described, alternate test methods are suggested, and a comparative study is presented contrasting a DFT approach –
including boundary-scan test – versus a non-DFT approach.
Keywords: boundary scan, design-for-test, DFT, DIMM, DRAM, IEEE Std 1149.1, in-circuit, JTAG, memory, module,
SDRAM, test.
Figure 1. Subject Module (1/2X)
1. Introduction
The high quality of electronic systems being demanded by business and private consumers today is driving the growing
importance that manufacturers are placing on testing as a whole. Ever-increasing miniaturization and complexity of
very-large-scale integration (VLSI) integrated circuits (ICs) and systems are, in turn, leading to escalating difficulties faced
by board/module manufacturers in using conventional test methods for their testing needs. The advent of new assembly
technologies like fine-pitch surface-mount technology (SMT), multichip modules (MCMs), tape-automated bonding (TAB),
and chip-on-board (COB) have complicated matters further.
Due to such advances, not only has it become difficult to gain physical access to probe printed-wiring-board (PWB) traces,
but it has also become impractical to continue with conventional test development. With increased IC and module complexity ,
the high costs involved with developing test programs are recurring, as standard test programs that could be reused several
times in the past, now need to be generated with a specific application in mind, due to the application-specific nature of ICs.
Therefore, to maintain quality of products and increase competitive advantage while remaining economically viable, new and
evolving system-level test methodologies aimed at improving overall testability must be adopted. This paper will demonstrate
the applicability of such methods to a buffered SDRAM DIMM.
2. Module Construction
The analysis to be presented in this paper is based on a 200-pin, 2-bank x 2M x 72, buffered SDRAM DIMM designed at T exas
Instruments (TI) according to JEDEC Standard 21-C. Figure 1 shows the subject module at half-size magnification. As shown,
the module is a double-sided assembly that uses a high degree of miniaturization for both components and assembly.
2
The fundamental elements of the buffered SDRAM DIMM are a laminate substrate with dual-in-line edge contacts, a
high-speed buffered register IC, a phase-locked-loop (PLL) clock distribution IC, several SDRAM ICs, as well as several
capacitor and resistor components. Table 1 provides a summary of the module construction. As can be ascertained from this
summary, all components, including passives as well as ICs, are of the fine-pitch surface-mount type.
Table 1. Summary of Module Construction
PWB
Finished size: 1.15 in. x 6.05 in. x 0.05 in; finished cost: $10
Substrate: glass-base epoxy resin, flame retardant (FR4) – 6 layers; edge: 200 pin, gold plate
Wiring: copper/entek plus, size 4 mil, pitch 10 mil; vias: size 12 mil, pitch 50 mil
ICs
DESCRIPTION
NO
PART NO
COST $
PACKAGE
LEAD
IC
s
DESCRIPTION
NO
.
PART
NO
.UNIT EXT’ED
PACKAGE
LEAD
PITCH
SDRAM 2M × 8 18 TMS626802 30.00 540.00 44-pin TSOP 0.80 mm
Buffered register 20 bit 1 ALVCH162721 5.00 5.00 56-pin TSSOP 0.50 mm
Clock driver 1-to-12 PLL 1 CDC2586 6.00 6.00 52-pin TQFP 0.65 mm
PD buffer 8 bit 1 LVC244 1.00 1.00 20-pin TSSOP 0.65 mm
PASSIVES
NO
COST $
PACKAGE
PITCH
PASSIVES
NO
.UNIT EXT’ED
PACKAGE
PITCH
Shunt/tie-off resistors (0, 10) 8, 72 0.01 0.80 0603 50 mil
Bypass capacitors (0.001, 0.1) 24, 24 0.03 1.44 0603 50 mil
In the dual-bank architecture of the subject module, nine SDRAM ICs are placed on each side of the PWB. The clock driver
and related passives are placed on one side of the board, while the register and buffer, along with associated passives, are placed
on the other side of the board.
As noted in the construction summary , the PWB was constructed in six layers. The two outer layers were used for the data I/O
and address/control buses. One inner layer was used for the clock signal routing, while another was used for routing register
outputs to receiving SDRAMs on the back side. Finally, the remaining two layers were used for power (Vcc) and ground planes.
3. Module Function
The function of the subject SDRAM DIMM is shown in the block diagram of Figure 2. All address (12) and control (8) lines
to the SDRAM devices are buffered and retimed through the 20-bit register . Data in/out signals are driven directly to/from the
card edge via 10-ohm series damping resistors. External damping resistors are avoided on the address, clocks, and controls
through the use of ICs that integrate such resistors. The single clock driver supplies buffered, phase-controlled clock signals
to the register, as well as all SDRAM devices. The octal buffer sources the buf fered presence-detect outputs, which provide
configuration information about the DIMM. The output enable for this buffer is controlled by the presence-detect enable
(PDE) signal.
3
Figure 2. Module Block Diagram
4. Taxonomy of Defects
The causes for defects in a module can broadly be classified into process defects and random point defects. Process defects
can result from high or abnormal variation in processing, such as in solder paste thickness, wiper pitch, etc., while point defects
may result from particulate or other contamination.
Some defects that occur during the assembly process are commonly caused by manufacturing errors, such as the use of wrong
components or missing components. Defects introduced during module assembly can also result from manufacturing
processes, such as incorrect or insufficient paste, incorrect component placement, cold solder, solder splashes, contamination,
or process damage. These may also be caused by use of defective or faulty components in the form of broken or improper leads,
mislabeled parts or wrong values, or cracked components.
Regardless of their root cause, such defects can result in improper operation/function of the assembly. Therefore, testing is
necessary to verify proper module function, to identify defects in faulty assemblies for rework and repair, as well as to eliminate
sources of defects in the process.
A specific manifestation of a defect in an assembly is referred to as an assembly fault. These can be broadly grouped into gross
and marginal classes. Marginal assembly faults are parametric in nature and deal with electrical characteristics of circuits like
threshold, bias, and leakage currents and voltages. Delay faults can be classified as such. Gross assembly faults can be divided
into interconnect faults, which include shorts and opens, and placement faults, which are caused by wrong component
orientation or wrong part in socket.
4
Table 2. Node/Solder-Joint Matrix With Card-Edge and In-Circuit Test Fault Classification
SIGNAL NODES
NO
ASSOCIATED
DESCRIPTION
CLASSIFICATION OF
SOLDER JOINT FAULTS
I
LIT
Y
SIGNAL NODES NO. ASSOCIATED
SOLDER JOINTS NO. DESCRIPTION CARD-EDGE
(NO DFT) ICT
ICT
E
SSIBI
L
ss/
Lss/
Hso/
Lso/
Hso
ACC
E
Edge Reg(addr) 12 Reg-I(addr) 12 Module Address Inputs fA fA fA fA iB a
Edge Reg(cas) 1 Reg-I(cas) 1 Module Column-
Address Strobe Input fX fX fX fX iB a
Edge Reg(cke) 2 Reg-I(cke) 2 Module Clock Enable Inputs
1 per bank fX’ fQ fX’ fQ iB a
Edge Reg(dqm) 1 Reg-I(dqm) 1 Module Data/
Output Mask Enable Input fR fX fR fX iB a
Edge Reg(ras) 1 Reg-I(ras) 1 Module Row-Address Strobe Input fX fX fX fX iB a
Edge Reg(s) 2 Reg-I(s) 2 Module Chip Select Inputs
1 per bank fX’ fX’ fX’ fX’ iB a
Edge Reg(w) 1 Reg-I(w) 1 Module Write Enable Input fX fX fX fX iB a
Edge CDC(clk) 1 CDC-I(clkin) 1 Module System Clock Input fX fX fX fX iC a
Edge Buf(pde) 1 Buf-I(pde) 2 Module Presence
Detect Enable Input fS fS fS fS iS a
Edge Shunt(id)
3
Shunt-head(id)
Module Identification Output
fT
fT
fT
fT
iT
a
Ed
ge
Sh
un
t(id)
3
Shunt-tail(id)
M
o
d
u
l
e
Id
en
tifi
ca
ti
on
O
u
t
pu
t
fT
fT
fT
fT
iT
x
Edge Shunt(in/out)
2
Shunt-head(in/out)
Module Physical Presence
fU
fU
fU
fU
iT
a
Ed
ge
Sh
un
t(i
n
/
ou
t)
2
Shunt-tail(in/out)
Module Physical Presence
Detect Input/Output
fU
fU
fU
fU
iT
a
Edge SDRAM(dq): 72 Resistor-head 72 Module Data Input/Data Output
All SDRAM I/O d i
fV fV fV fV iV a
Edge Resistor 72 Resistor-tail 72
pp
All SDRAM I/Os are driven
through 10
-
ohm resistors
fV fV fV fV iV d
Resistor SDRAM(dq) 72 SDRAM-I/O(dq) 144
th
roug
h
10
-o
h
m res
i
s
t
ors
to/from card edge fV fV fV fV iV
Edge
8
Buf-O(pd)
Module Logical Presence fW fW fW fW
iB
a
Ed
ge
8
B
u
f
-
O(
p
d)
Detect Outputs fW’ fW’ fW’ fW’
iB
a
Reg SDRAM(addr)
12
Reg-O(addr) 12
SDRAM Address
fA
fA
fA fA iB
b
R
eg
SDRAM(
a
dd
r
)
12
SDRAM-I(addr) 216
SDRAM
Add
ress
fA
fA
fA fA iA
b
Reg SDRAM(cas)
1
Reg-O(cas) 1
SDRAM Column-Address Strobe
fX
fX
fX fX iB
b
R
eg
SDRAM(
cas
)
1
SDRAM-I(cas) 18
SDRAM
C
o
l
umn-
Add
ress
St
ro
b
e
fX
fX
fX’’ fX’’ iX’’’
b
Reg SDRAM(cke)
2
Reg-O(cke) 2 SDRAM Clock Enable
fX
fQ
fX’ fQ iB
b
R
eg
SDRAM(
c
k
e
)
2
SDRAM-I(cke) 18
SDRAM Clock Enable
1 per bank
fX’
fQ
fX’’ fQ’ iX’’’
b
Reg SDRAM(dqm)
1
Reg-O(dqm) 1
SDRAM Data/Output Mask Enable
fR
fX
fR fX iB
b
R
eg
SDRAM(d
qm
)
1
SDRAM-I(dqm) 18
SDRAM
D
a
t
a
/O
u
t
pu
t
M
as
k
E
na
bl
e
fR
fX
fR’ fX’’ iX’’
b
Reg SDRAM(ras)
1
Reg-O(ras) 1
SDRAM Row-Address Strobe
fX
fX
fX fX iB
b
R
eg
SDRAM(
ras
)
1
SDRAM-I(ras) 18
SDRAM
R
ow-
Add
ress
St
ro
b
e
fX
fX
fX’’ fX’’ iX’’’
b
Reg SDRAM(s)
2
Reg-O(s) 2 SDRAM Chip Select
fX
fX
fX’ fX’ iB
b
R
eg
SDRAM(
s
)
2
SDRAM-I(s) 18
SDRAM Chip Select
1 per bank
fX’
fX’
fX’’ fX’’ iX’’’
b
Reg SDRAM(w)
1
Reg-O(w) 1
SDRAM Write Enable
fX
fX
fX fX iB
b
R
eg
SDRAM(
w
)
1
SDRAM-I(w) 18
SDRAM
W
r
it
e
E
na
bl
e
fX
fX
fX’’ fX’’ iX’’’
b
n/c = not considered; n/f = no fault
noise injected onto open inputs may cause intermittent/unexpected results
assuming 100% node coverage
5
Table 2. Node/Solder-Joint Matrix With Card-Edge and In-Circuit Test Fault Classification (Continued)
SIGNAL NODES
NO
ASSOCIATED
DESCRIPTION
CLASSIFICATION OF
SOLDER JOINT FAULTS
BI
LIT
Y
SIGNAL NODES NO. ASSOCIATED
SOLDER JOINTS NO. DESCRIPTION CARD-EDGE
(NO DFT) ICT
ICT
E
SSIBI
L
ss/
Lss/
Hso/
Lso/
Hso
ACC
E
CDC SDRAM(clk)
9
CDC-O(clk) 9
SDRAM System Clock
fX
’’
fX
’’ fX’ fX’’ iC’
b/c
CDC
SDRAM(
c
lk)
9
SDRAM-I(clk) 18
SDRAM
S
ys
t
em
Cl
oc
k
fX’’
fX’’
fX’’ fX’’ iX’’’
b/
c
CDC Reg(clk)
1
CDC-O(clk)
Register System Clock
fX
fX
fX
fX
iC’
b
CDC
R
eg
(
c
lk)
1
Reg-I(clk)
R
eg
i
s
t
er
S
ys
t
em
Cl
oc
k
fX
fX
fX
fX
iD
b
CDC CDC(fb)
1
CDC-O(fb)
CDC External Feedback
fX
fX
fX
fX
iC’
b
CDC
CDC(fb)
1
CDC-I(fb)
CDC
E
x
t
erna
l
F
ee
db
ac
k
fX
fX
fX
fX
iC
b
Bf Sh (dI)
4
Buf-I(pd)
Buffer Input
fW
fW
fW
fW
iB’ d
Buf Shunt(pd-I) 4 Shunt-head(pd) 4
Buffer
Input
(Presence Detect)
Tie offs
fW fW fW fW iT
Shunt-tail(pd) Tie-offs iT x
OTHER
SOLDER JOINTS
Reg-I(clken) 1 Reg Clock Enable (to be low) n/f fX n/f fX iD x
Reg-I(NC) 1 Reg No-Connect (to be low) n/f n/f n/f n/f n/f x
Reg-I(oe) 1 Reg Output Enable (to be low) n/f fX n/f fX iS x
CDC-I(clr) 1 CDC Clear (to be low) n/f n/f n/fn/fn/fx
CDC-I(NC) 1 CDC No-Connect (to be low) n/f n/f n/f n/f n/f x
CDC-I(oe) 1 CDC Output Enable (to be low) n/f fX n/f fX iS x
CDC-I(sel) 2 CDC Select (to be low) n/f fY n/f fY iY x
CDC-I(test) 1 CDC Test (to be low) n/f fZ n/f fZ iZ x
SDRAM-I(NC) 90 SDRAM No-Connect (to be low) n/f n/f n/f n/f n/f x
Buf-I(pd) 4 Buf Input
(Presence Detect -- to be low) n/f fW’ n/f fW’ iB x
Reg-Power 12 Register Vcc/GND n/c n/c n/c n/c n/c x
CDC-Power 32 CDC Vcc/GND n/c n/c n/c n/c n/c x
SDRAM-Power 216 SDRAM Vcc/GND n/c n/c n/c n/c n/c x
Buf-Power 2 Buffer Vcc/GND n/c n/c n/c n/c n/c x
Cap-head
Bypass Capacitors
n/c
n/c
n/c
n/c
n/c
x
Cap-tail
B
ypass
C
apac
it
ors n
/
c n
/
c n
/
c n
/
c n
/
c x
TOTAL
SIGNAL NODES 214 TOTAL
SOLDER JOINTS 1175
n/c = not considered; n/f = no fault
noise injected onto open inputs may cause intermittent/unexpected results
assuming 100% node coverage
Because of its construction, the module typically is subject to such manufacturing defects and consequent assembly faults. As
the majority of defects in fine-pitch surface-mount assemblies, especially those associated with process rather than human
error, directly affect solder joints, the analysis presented in this paper addresses that issue. Columns 1 to 5 of T able 2 enumerate
the signal nodes, their associated solder joints, and other solder joints (those associated with Vcc/GND nodes) in the module.
6
5. Fault Models
For faults to be modeled or simulated – for coverage and diagnostic analysis among other purposes – they must be represented
mathematically by abstraction through a logical model. Such logical models are called fault models. They constitute a basic
set of assumptions that represent such faults. By such abstraction, the problem of modeling physical faults is reduced to a logical
level that can represent the effects of physical faults on the behavior of the system. The process of fault analysis is also
simplified by converting faults across several technologies into logical fault models that are independent of process.
A fault model used pervasively in many sorts of test and DFT analysis is the single-stuck-at model, in which a single defective
node is presumed to behave as if it were constantly held to a static low or high level. For our analysis, this model will be extended
to comprehend faults resulting from defects in solder joints.
Each solder joint can be faulty , either due to an open condition or a short condition. Thus, the single-stuck-at model is modified
to cover both cases, resulting in the fault model detailed in Table 3.
Table 3. Defined Solder-Joint Fault Model
NOTATION FAULT NAME DESCRIPTION
ss/L Solder-short/low Entire associated node stuck low
ss/H Solder-short/high Entire associated node stuck high
so/L Solder-open/low Pin is stuck low, independent of associated node
so/H Solder-open/high Pin is stuck high, independent of associated node
6. Test Methodologies
Two categories of test are typically considered for manufacturing use:
1. Dynamic functional tests: tests defined in association with a functional and/or performance fault model. These test
for faults, such as delay faults, that are associated with the performance of the system and are intended to demonstrate
the suitability of the finished module to its intended function.
2. Static structural tests: tests defined in association with a structural fault model. These methods test for gross
interconnectivity issues. In-circuit test (ICT) is an example of a static structural test method. The solder -open/short
faults of Table 3 would be susceptible to such methods.
While the need for dynamic functional test is taken as a given, such analysis is beyond the scope of this paper. Such testing
may in fact be required to detect certain classes of solder-open faults, such as those associated with bypass capacitors. However,
the capability of such testing to diagnose or even detect structural defects is generally suspect. Therefore, the remaining
analysis will focus exclusively on structural test goals.
7. Card-Edge Test (Module Without DFT)
As the subject module was designed solely for the purpose of demonstrating electrical performance characteristics of a buffered
SDRAM DIMM, it was designed without any consideration for testability . Without such DFT , observability and controllability
are limited to the primary (card edge) input/outputs (I/Os) of the module. This implies that for faults to be detected, such faults
must be sensitized from the card-edge inputs and propagated through the entire module to the card-edge outputs. Diagnosis
(isolation and location) of faults poses even greater difficulties, as many faults will produce the same syndrome at the
primary I/Os.
The various fault syndromes resulting from modeled faults at each class of module solder joint are classified in columns 6–9
of Table 2 and defined in Table 4. The latter table also details the number of patterns and/or read/write cycles to be applied,
along with a brief description of algorithms and consequent diagnostic resolution.
As shown in this analysis, many solder-joint faults produce common syndromes resulting in poor diagnostic resolution for
structural faults when only card-edge access is provided.
7
Table 4. Card-Edge Test Fault Classification
FAULT
DESCRIPTION
NUMBER PATTERNS FOR DETECTION/ISOLATION
DIAGNOSTIC RESOLUTION
FAULT
CLASS DESCRIPTION NUMBER PATTERNS FOR DETECTION/ISOLATION;
(ALGORITHM) NO.
COMPONENTS
NO.
SOLDER
JOINTS
fA All-chip addressing fault 2 *((N+1)w + (N+1)r) = 26w + 26r;
(write to all-0 addr and to all addr with only 1 logic-1 bit – read
same; repeat for all-1 addr and all addr with only 1 logic-0 bit) 19 20
fA Single-chip addressing fault 1 1
fQ Bank access-hold fault 1wb + 1rb; (CKE low during read burst for access hold) 10 11
fQ’ Single-chip access-hold fault 1 1
fR All-chip access-mask fault 1wb + 1rb; (DQM high during read/write burst for data mask) 19 20
fR’ Single-chip access-mask fault 1 1
fS Presence detect
enable/disable fault 2; (PDE low/high) 1 1
fT Identification output fault 1; (static output) 1 2
fU IN/OUT fault 4; (IN low/high, OUT low/high) 1 2
fV Dual-chip data fault 2 * 2*72(1w + 1r) = 288w + 288r;
(walking-1 each bank, walking-0 each bank) 3 4
fV’ Single-chip data fault 1 1
fW Presence detect
output fault(1) 1; (static output) 2 4
fW’ Presence detect
output fault(2) 1; (static output) 1 1
fX All-chip gross access fault 1w + 1r; (any valid write /read access with any addr/data) 20 69
fX’ Bank gross access fault 10 22
fX’’ Dual-chip gross access fault 2 3
fX’’ Single-chip gross access fault 1 7
fY Clock multiply fault 2*(1wb + 1rb); (1 wb/rb to bank0, 1 wb/rb to bank1) 1 1
fZ Clock PLL-bypass fault 1w + 1r; (at freq. which will not result in phase-lock) 1 1
8. Module DFT
Design-for-test techniques are generally based on providing greater access to the module under test for the purpose of
improving the degree to which the module function can be observed and controlled. Another way of looking at DFT is that
it seeks to partition the larger module function into smaller functions that are easier to test. Several techniques for this are in
common use today. The two that are considered in this paper are in-circuit test (ICT) and boundary scan.
9. In-Circuit Test
ICT is based on providing physical access to probe as many module nodes as possible and on ad-hoc circuit techniques that
allow internal nodes to be safely controlled (as well as observed) by an external tester . The resulting test fixture is commonly
called a “bed of nails” (or in the case of double-sided assembly such as the subject module, a “clam shell”) and the required
tester consists of a large number of high-drive parallel test channels.
Generally, on fine-pitch SMT assemblies such as the subject module, provision for ICT requires placement of “test points”
on which ICT probes may land. In some cases, the vias that are anyway present to route signals from outer layers to other layers
may provide such test points. In other cases, vias must be added to bring signals to be accessed up from inner layer to outer layer.
8
Such placement of test points requires use of module “real estate” that may not be available. Generally, the finest available
ICT probes (50-mil pitch) require test pads of 25 mils minimum width.
While modifications to the module layout have not been specifically implemented, the module layout has been analyzed for
placement of physical test points. The results by node are presented in column 11 of Table 2 according to the accessibility
classes defined in Table 5.
Table 5. In-Circuit Test Accessibility Classification
ACCESSIBILITY
CLASS DESCRIPTION
aAccessible from module edge
bTest points easily provided
c Test points provided with difficulty
dTest points difficult/impossible to provide
x Accessible from module edge (Vcc/GND)
With test points provided at all internal nodes, the module is quite controllable at the IC level. Since all ICs on the module
provide means for placing their outputs at high impedance, the tester can safely disable any ICs that are not under test. The
only provision that would be required for this is to add pull-down resistors at register and clock driver output-enable pins versus
the direct tie to GND that is specified for the original module.
Based on the presumed insertion of test points at all internal nodes except those in accessibility class d (quantity 31), full
coverage and diagnostic of solder shorts are provided. The nodes excluded are indirectly accessible via shunt or resistor , and
so their exclusion may somewhat reduce fault diagnostic, but not coverage. In case of solder opens, the consequent fault
syndromes resulting at each class of module solder joint are classified in column 10 of Table 2 and are defined in T able 6. The
latter table also indicates the consequent diagnostic resolution.
Table 6. In-Circuit Test Fault Classification
FAULT
DESCRIPTION
DIAGNOSTIC RESOLUTION
FAULT
CLASS DESCRIPTION NO.
COMPONENTS
NO.
SOLDER
JOINTS
iA Single-Chip Addressing Fault 1 1
iB Buffer Data Fault 1 2
iB’ Buffer Data Fault (no access) 2 3
iC Gross Clock Output Fault 1 2
iC’ Single Clock Output Fault 1 1
iD Register Clock Fault 1 2
iS Output Enable Fault 1 1
iT Shunt/Resistor Fault 1 2
iV Memory Data Fault 2 3
iX’’ Single-Chip Gross Access Fault 1 7
iY Clock Multiply Fault 1 1
iZ Clock PLL-Bypass Fault 1 1
As shown, the diagnostic resolution is remarkably improved (versus card-edge test), such that all single solder-stuck faults are
generally diagnosable to the component and often to the pin level. Such a diagnostic provides the information necessary to
improve process and repair failed boards for subsequent shipment.
9
10. Boundary-Scan Test
Like ICT , boundary-scan test (BST), as standardized in IEEE Std 1 149.1 (JT AG), is based on providing test access to as many
module internal nodes as possible. Unlike ICT, boundary scan provides access by integrating digital test cells behind the pins
of compliant ICs. Access to such boundary-scan cells for control and observation of the module is provided by a 4-wire test
access port (TAP) at each compliant IC. Thus, the complex and expensive fixturing and automated test equipment (ATE)
required for ICT is avoided.
10.1 Boundary Scan at Register and Clock Driver
Of the 31 internal nodes that are presumed to be ICT accessible, 21 are associated with the register (ALVCH162721) while
10 are associated with the clock driver (CDC2586). Therefore, if the register and clock driver were replaced with suitably
equivalent ICs with boundary scan, all ICT-covered nodes would be boundary-scan accessible, and thus, ICT could be
eliminated without any consequent loss of fault coverage or diagnostic.
Such equivalents or near equivalents to the ALVCH162721 are, or will be, available soon (such as LVTH182504A and/or
ALVCH182504, at an estimated additional cost of $5). Unfortunately, the authors are unaware of any clock drivers available
or planned with boundary scan. If these were available (at an estimated additional cost of $3), then boundary scan would
displace ICT, while requiring off-edge physical access only to the four TAP signals and using much less expensive ATE – all
at an additional component cost that is barely 1% of the total cost of module materials.
10.2 Boundary Scan at Register Only
Even with boundary scan available only in the register , controllability and observability of the SDRAM ICs is provided, with
the exception of the clock signals. Observability of one output of the clock driver is also provided. Therefore, if access to the
TEST input of the CDC2586 were provided, the low-cost boundary-scan tester could source the module CLKIN signal so that
it would be coordinated with boundary-scan operations to perform read/write cycles to the SDRAM array. By doing so, all
interconnects to the SDRAMs can be tested with the same fault coverage and diagnostic capability provided by ICT. Access
to only five off-edge signals is required (four TAP signals, plus the CDC2586 TEST input).
10.3 Boundary Scan at SDRAM ICs
Boundary scan in the SDRAMs would greatly impact the overall controllability/observability of the module such that
diagnostic resolution would be improved over that provided by ICT . For example, where faults of class iX’ ’ (single-chip gross
access fault) occur in ICT, the boundary-scan facility on the SDRAM would be able to distinguish which of seven pins on the
device were open.
At this time, the authors are unaware of any available or planned offerings of SDRAMs with boundary scan. However, due
to the large ratio of die size to I/O pins of such ICs, it is estimated that the silicon overhead for providing boundary-scan should
be less than 5%. It is hoped that memory IC vendors will realize the benefit of scan-test techniques, not only for
board/manufacturing test, but also to access built-in test capabilities of such ICs.
10.4 Boundary Scan at Buffer
As it has a very simple function on the module (drive static outputs), the octal buffer is the last device to warrant consideration
for boundary scan. Still, the additional cost (estimated at $2) required to procure equivalent buffers with boundary scan would
be minimal.
10.5 Boundary Scan: Beyond Manufacturing Test
A real advantage that boundary scan holds over any other manufacturing test or DFT approach is that it is built into the ICs
and, thus, the module, and so is available for use when ATE is not. For example, it can be used for module test during burn-in
or under other conditions where the module is not accessible by ATE. Additionally, if appropriate system-level access to
boundary scan is provided, it can be used for in-system test, diagnostics, configuration, programming, emulation, etc.
10
11. Comparative Study
Several metrics have been used to grade the different structural test methodologies outlined. A tabulation of the performance
of the various test methodologies versus these metrics is given in Table 7.
Table 7. Comparison of Test Methodologies
METRIC CARD-EDGE ICT BST
Fault coverage 95%+ 95%+ 95%+
Fault diagnostic 4 sol. joints 2 sol. joints 2 sol. joints
V ector development 100 per-hr 30 per-hr 15 per-hr
Test pattern size 1 Mb 100 kb 20 kb
Test time 0.1 s 0.1 s 0.1 s
Tester cost $200k $400k $40k
Fault coverage is the estimated percentage of faults that will be detected. Since the subject module is fairly simple structurally ,
it is expected that all test methods will obtain a high level of coverage.
Fault-diagnostic capability is expressed as a weighted average of resolution in terms of solder joints. Excellent results from
ICT and BST are typical, while the result for card-edge test belies the simple function of this module.
Vector development effort is measured in terms of the estimated number of person-hours required to complete the test set.
Boundary-scan test development is highly automated, while ICT is somewhat less so. On the other hand, card-edge test
development tends to be manual.
T est-pattern size is expressed in bits. With full BST , the vector set is on the order of log2 (number of module nodes). ICT vector
sets will be somewhat longer, while card-edge vector sets can be very lengthy, in order to obtain desired fault coverage and
diagnostic resolution.
Test time is a factor of the number of vectors and the vector application time. BST uses a low vector bit rate, but due to the
small number of vectors, performs quite adequately. ICT and card-edge testers can use much higher vector bit rates.
Tester cost is estimated and is a function of performance (vector bit rate), number of test channels, etc. The small number of
channels required for BST and modest performance requirements result in very inexpensive test systems.
12. Conclusion
Considering the metrics and discussion provided in the prior section, boundary-scan test is clearly a winning manufacturing
test strategy , even for a module of modest functional complexity . Add to this the ability to reuse boundary scan during burn-in,
and more importantly in fielded systems, and a small investment in additional component cost for boundary scan will reap
dividends many times over throughout the product’s life cycle.
11
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