CJD44H11 NPN
CJD45H11 PNP
SURFACE MOUNT SILICON
COMPLEMENTARY
POWER TRANSISTORS
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CJD44H11 and
CJD45H11 are complementary silicon power transistors
manufactured in a surface mount package, and
designed for switching and power amplifier applications.
MARKING: FULL PART NUMBER
MAXIMUM RATINGS: (TC=25ºC unless otherwise noted)
SYMBOL UNITS
Collector-Emitter Voltage VCEO 80 V
Emitter-Base Voltage VEBO 5.0 V
Continuous Collector Current IC 8.0 A
Peak Collector Current ICM 16 A
Power Dissipation PD 20 W
Power Dissipation (TA=25ºC) PD 1.75 W
Operating and Storage Junction Temperature TJ, Tstg -65 to +150 ºC
Thermal Resistance ΘJC 6.25 ºC/W
Thermal Resistance ΘJA 71.4 ºC/W
ELECTRICAL CHARACTERISTICS: (TC=25ºC unless otherwise noted)
SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
ICES V
CE=80V 10 μA
IEBO V
EB=5.0V 50 μA
BVCEO IC=30mA 80 V
VCE(SAT) I
C=8.0A, IB=400mA 1.0 V
VBE(SAT) I
C=8.0A, IB=800mA 1.5 V
hFE V
CE=1.0V, IC=2.0A 60
hFE V
CE=1.0V, IC=4.0A 40
fT V
CE=10V, IC=500mA, f=20MHz (CJD44H11) 60 MHz
fT V
CE=10V, IC=500mA, f=20MHz (CJD45H11) 50 MHz
Cob V
CB=10V, IE=0, f=0.1MHz (CJD44H11) 120 pF
Cob V
CB=10V, IE=0, f=0.1MHz (CJD45H11) 220 pF
td + tr I
C=5.0A, IB1=500mA (CJD44H11) 320 ns
td + tr I
C=5.0A, IB1=500mA (CJD45H11) 150 ns
ts I
C=5.0A, IB1=IB2=500mA 450 ns
tf I
C=5.0A, IB1=IB2=500mA (CJD44H11) 130 ns
tf I
C=5.0A, IB1=IB2=500mA (CJD45H11) 100 ns
DPAK CASE
R3 (21-January 2013)
www.centralsemi.com
CJD44H11 NPN
CJD45H11 PNP
SURFACE MOUNT SILICON
COMPLEMENTARY
POWER TRANSISTORS
DPAK CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Base
2) Collector
3) Emitter
4) Collector
MARKING:
FULL PART NUMBER
www.centralsemi.com
R3 (21-January 2013)
