Document Number: 91033 www.vishay.com
S-82999-Rev. A, 12-Jan-09 1
Power MOSFET
IRF634N, IRF634NL, IRF634NS, SiHF634N, SiHF634NL, SiHF634NS
Vishay Siliconix
FEATURES
• Advanced Process Technology
• Dynamic dV/dt Rating
• 175 °C Operating Temperature
• Fast Switching
• Fully Avalanche Rated
• Ease of Paralleling
• Simple Drive Requirements
• Lead (Pb)-free Available
DESCRIPTION
Fifth generation Power MOSFETs from Vishay utilize
advanced processing techniques to achieve extremely low
on-resistance per silicon area. This benefit, combined with
the fast switching speed and ruggedized device design that
Power MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use in a
wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
The D2PAK (TO-263) is a surface mount power package
capable of accommodating die sizes up to HEX-4. It provides
the highest power capability and the lowest possible
on-resistance in any existing surface mount package. The
D2PAK (TO-263) is suitable for high current applications
because of its low internal connection resistance and can
dissipate up to 2.0 W in a typical surface mount application.
The through-hole version (IRF634NL, SiHF634NL) is
available for low-profile application.
Note
a. See device orientation.
PRODUCT SUMMARY
VDS (V) 250
RDS(on) (Ω)V
GS = 10 V 0.435
Qg (Max.) (nC) 34
Qgs (nC) 6.5
Qgd (nC) 16
Configuration Single
N-Channel MOSFET
G
D
S
D2PAK (TO-263)
GD
S
TO-220
GDS
I2PAK (TO-262)
GDS
Available
RoHS*
COMPLIANT
ORDERING INFORMATION
Package TO-220 D2PAK (TO-263) D2PAK (TO-263) D2PAK (TO-263) I2PAK (TO-262)
Lead (Pb)-free
IRF634NPbF IRF634NSPbF IRF634NSTRLPbFaIRF634NSTRRPbFaIRF634NLPbF
SiHF634N-E3 SiHF634NS-E3 SiHF634NSTL-E3aSiHF634NSTR-E3aSiHF634NL-E3
SnPb
IRF634N IRF634NS IRF634NSTRLaIRF634NSTRRa-
SiHF634N SiHF634NS SiHF634NSTLaSiHF634NSTRa-
* Pb containing terminations are not RoHS compliant, exemptions may apply
www.vishay.com Document Number: 91033
2S-82999-Rev. A, 12-Jan-09
IRF634N, IRF634NL, IRF634NS, SiHF634N, SiHF634NL, SiHF634NS
Vishay Siliconix
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature.
b. Starting TJ = 25 °C, L = 9.5 mH, RG = 25 Ω, IAS = 4.8 A, VGS = 10 V.
c. 1.6 mm from case.
d. This is only applied to TO-220 package.
e. This is applied to D2PAK, when mounted 1" square PCB (FR-4 or G-10 material).
Notes
a. This is only applied to TO-220 package.
b. This is applied to D2PAK, when mounted 1" square PCB (FR-4 or G-10 material).
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage VDS 250 V
Gate-Source Voltage VGS ± 20
Continuous Drain Current VGS at 10 V TC = 25 °C ID
8.0
ATC = 100 °C 5.6
Pulsed Drain CurrentaIDM 32
Linear Derating Factor 0.59 W/°C
Single Pulse Avalanche EnergybEAS 110 mJ
Avalanche CurrentaIAR 4.8 A
Repetiitive Avalanche EnergyaEAR 8.8 mJ
Maximum Power Dissipation TC = 25 °C PD
88 W
Maximum Power Dissipation (PCB Mount)eTA = 25 °C 3.8
Peak Diode Recovery dV/dt dV/dt 7.3 V/ns
Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 175 °C
Soldering Recommendations (Peak Temperature) for 10 s 300c
Mounting Torqued6-32 or M3 screw 10 lbf · in
1.1 N · m
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL TYP. MAX. UNIT
Maximum Junction-to-AmbientaRthJA -62
°C/W
Maximum Junction-to-Ambient
(PCB Mount)bRthJA -40
Maximum Junction-to-Case (Drain) RthJC -1.7
Case-to-Sink, Flat, Greased SurfaceaRthCS 0.50 -
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA 250 - - V
VDS Temperature Coefficient ΔVDS/TJ Reference to 25 °C, ID = 1 mA - 0.33 - V/°C
Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 2.0 - 4.0 V
Gate-Source Leakage IGSS V
GS = ± 20 V - - ± 100 nA
Zero Gate Voltage Drain Current IDSS
VDS = 250 V, VGS = 0 V - - 25 µA
VDS = 200 V, VGS = 0 V, TJ = 150 °C - - 250
Drain-Source On-State Resistance RDS(on) V
GS = 10 V ID = 4.8 Ab- - 0.435 Ω
Forward Transconductance gfs VDS = 50 V, ID = 4.8 Ab5.4 - - S
Document Number: 91033 www.vishay.com
S-82999-Rev. A, 12-Jan-09 3
IRF634N, IRF634NL, IRF634NS, SiHF634N, SiHF634NL, SiHF634NS
Vishay Siliconix
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Fig. 1 - Typical Output Characteristics Fig. 2 - Typical Output Characteristics
Dynamic
Input Capacitance Ciss VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz, see fig. 5
- 620 -
pFOutput Capacitance Coss -84-
Reverse Transfer Capacitance Crss -23-
Total Gate Charge Qg
VGS = 10 V ID = 4.8 A, VDS = 200 V,
see fig. 6 and 13b
--34
nC Gate-Source Charge Qgs --6.5
Gate-Drain Charge Qgd --16
Turn-On Delay Time td(on)
VDD = 125 V, ID = 4.8 A,
RG = 1.3 Ω, see fig. 10b
-8.4-
ns
Rise Time tr -16-
Turn-Off Delay Time td(off) -28-
Fall Time tf -15-
Internal Drain Inductance LD Between lead,
6 mm (0.25") from
package and center of
die contact
-4.5-
nH
Internal Source Inductance LS-7.5-
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current ISMOSFET symbol
showing the
integral reverse
p - n junction diode
--8.0
A
Pulsed Diode Forward CurrentaISM --32
Body Diode Voltage VSD TJ = 25 °C, IS = 4.8 A, VGS = 0 Vb--1.3V
Body Diode Reverse Recovery Time trr TJ = 25 °C, IF = 4.8 A, dI/dt = 100 A/µsb- 130 200 ns
Body Diode Reverse Recovery Charge Qrr - 650 980 nC
Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
D
S
G
S
D
G
91033_01
Bottom
To p
VGS
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
4.5 V
20 µs Pulse Width
TC = 25 °C
4.5 V
VDS, Drain-to-Source Voltage (V)
ID, Drain-to-Source Current (A)
110
10
1
10-2
0.1
102
0.1 102
VDS, Drain-to-Source Voltage (V)
ID, Drain-to-Source Current (A)
Bottom
To p
VGS
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
4.5 V
20 µs Pulse Width
TC = 175 °C
91033_02
4.5 V
110
10
1
0.1
102
0.1 102
www.vishay.com Document Number: 91033
4S-82999-Rev. A, 12-Jan-09
IRF634N, IRF634NL, IRF634NS, SiHF634N, SiHF634NL, SiHF634NS
Vishay Siliconix
Fig. 3 - Typical Transfer Characteristics
Fig. 4 - Normalized On-Resistance vs. Temperature
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
20 µs Pulse Width
VDS = 50 V
102
10
0.1
ID, Drain-to-Source Current (A)
VGS, Gate-to-Source Voltage (V)
5.0 6.0 7.0 8.0 9.0
4.0
91033_03
1
TJ = 25 °C
TJ = 175 °C
I
D
= 7.9 A
V
GS
= 10 V
3.0
0.0
0.5
1.0
1.5
2.0
2.5
T
J,
Junction Temperature (°C)
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
91033_04
- 60 - 40- 20 0 20 40 60 80 100120 140 160 180
3.5
1200
1000
800
600
0
200
400
110
C, Capacitance (pF)
V
DS,
Drain-to-Source Voltage (V)
Ciss
Crss
Coss
VGS = 0 V, f = 1 MHz
Ciss = Cgs + Cgd, Cds Shorted
Crss = Cgd
Coss = Cds + Cgd
91033_05
102103
Q
G
, Total Gate Charge (nC)
V
GS
, Gate-to-Source Voltage (V)
20
16
12
8
0
4
010 4030
20
V
DS
= 50 V
V
DS
= 125 V
For test circuit
see figure 13
V
DS
= 200 V
91033_06
I
D
= 4.8 A
Document Number: 91033 www.vishay.com
S-82999-Rev. A, 12-Jan-09 5
IRF634N, IRF634NL, IRF634NS, SiHF634N, SiHF634NL, SiHF634NS
Vishay Siliconix
Fig. 7 - Typical Source-Drain Diode Forward Voltage
Fig. 8 - Maximum Safe Operating Area
Fig. 9 - Maximum Drain Current vs. Case Temperature
Fig. 10a - Switching Time Test Circuit
Fig. 10b - Switching Time Waveforms
102
1
V
SD
, Source-to-Drain Voltage (V)
I
SD
, Reverse Drain Current (A)
0.2 1.0
0.80.6
0.4
V
GS
= 0 V
91033_07
TJ = 25
°
C
TJ = 175
°
C
10
0.1
1.2
103
100 µs
1 ms
10 ms
Operation in this area limited
by RDS(on)
VDS, Drain-to-Source Voltage (V)
ID, Drain-to-Source Current (A)
TC = 25 °C
TJ = 175 °C
Single Pulse
102
0.1
1
10
110
102
91033_08
ID, Drain Current (A)
TC, Case Temperature (°C)
0.0
2.0
4.0
6.0
8.0
10.0
25 1501251007550
91033_09
175
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
RD
VGS
RG
D.U.T.
10 V
+
-
VDS
VDD
VDS
90 %
10 %
VGS
td(on) trtd(off) tf
www.vishay.com Document Number: 91033
6S-82999-Rev. A, 12-Jan-09
IRF634N, IRF634NL, IRF634NS, SiHF634N, SiHF634NL, SiHF634NS
Vishay Siliconix
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
10
1
0.1
10-2
10-5 10-4 10-3 10-2 0.1
PDM
t1
t2
t1, Rectangular Pulse Duration (s)
Thermal Response (ZthJC)
Notes:
1. Duty Factor, D = t1/t2
2. Peak Tj = PDM x ZthJC + TC
Single Pulse
(Thermal Response)
D = 0.5
0.2
0.1
0.05
0.02
0.01
91033_11
A
RG
IAS
0.01 Ω
tp
D.U.T
L
VDS
+
-VDD
Driver
15 V
20 VIAS
VDS
tp
200
0
40
80
120
160
25 150
125
10075
50
Starting TJ, Junction Temperature (°C)
EAS, Single Pulse Avalanche Energy (mJ)
Bottom
To p
ID
2.0 A
3.4 A
4.8 A
91033_12c
175
Document Number: 91033 www.vishay.com
S-82999-Rev. A, 12-Jan-09 7
IRF634N, IRF634NL, IRF634NS, SiHF634N, SiHF634NL, SiHF634NS
Vishay Siliconix
Fig. 13a - Basic Gate Charge Waveform Fig. 13b - Gate Charge Test Circuit
Fig. 14 - For N-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.c om/ppg?91033.
QGS QGD
QG
V
G
Charge
VGS
D.U.T.
3 mA
VGS
VDS
IGID
0.3 µF
0.2 µF
50 kΩ
12 V
Current regulator
Current sampling resistors
Same type as D.U.T.
+
-
P.W.Period
dI/dt
Diode recovery
dV/dt
Ripple ≤5 %
Body diode forward drop
Re-applied
voltage
Reverse
recovery
current
Body diode forward
current
VGS = 10 V*
VDD
ISD
Driver gate drive
D.U.T. ISD waveform
D.U.T. VDS waveform
Inductor current
D = P.W.
Period
+
-
+
+
+
-
-
-
*
V
GS
= 5 V for logic level devices
Peak Diode Recovery dV/dt Test Circuit
V
DD
• dV/dt controlled by R
G
• Driver same type as D.U.T.
• I
SD
controlled by duty factor "D"
• D.U.T. - device under test
D.U.T Circuit layout considerations
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
R
G
Document Number: 91000 www.vishay.com
Revision: 18-Jul-08 1
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Vishay
All product specifications and data are subject to change without notice.
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(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
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