© 2003 IXYS All rights reserved
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 150 °C 200 V
VDGR TJ= 25°C to 150°C; RGS = 1 MΩ200 V
VGS Continuous ±20 V
VGSM Transient ±30 V
ID25 TC= 25°C72A
IDM TC= 25°C, pulse width limited by T JM 288 A
IAR TC= 25°C72A
EAR TC= 25°C50mJ
EAS TC= 25°C 1.5 J
dv/dt IS≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, 5 V/ns
TJ≤ 150°C, RG = 2 Ω
PDTC= 25°C 400 W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
TL1.6 mm (0.062 in.) from case for 10 s 3 00 °C
MdMounting torque 1.13/10 Nm/lb.in.
Weight TO-247 AD 6 g
TO-268 4 g
TO-247 AD (IXTH)
G = Gate D = Drain
S = Source TAB = Drain
(TAB)
DS99019(03/03)
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified) Min. Typ. Max.
VDSS VGS = 0 V, ID = 250 µA 200 V
VGS(th) VDS = VGS, ID = 250µA 2.0 4.0 V
IGSS VGS = ±20 VDC, VDS = 0 ±100 nA
IDSS VDS = VDSS TJ = 25°C25µA
VGS = 0 V TJ = 125°C1mA
RDS(on) VGS = 10 V, ID = 0.5 I D25 33 mΩ
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
TO-268 (IXTT) Case Style
(TAB)
G
S
High Current
Power MOSFET IXTH 72N20 VDSS = 200 V
IXTT 72N20 ID25 = 72 A
RDS(on) = 33 mΩΩ
ΩΩ
Ω
Advance Technical Information
N-Channel Enhancement Mode
Features
zInternational standard packages
zLow RDS (on) HDMOSTM process
zRugged polysilicon gate cell structure
zUnclamped Inductive Switching (UIS)
rated
zLow package inductance
- easy to drive and to protect
Advantages
zEasy to mount
zSpace savings
zHigh power density
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343
IXTH 72N20
IXTT 72N20
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ. Max.
gfs VDS = 10 V; ID = 0.5 ID25, pulse test 30 40 S
Ciss 4400 pF
Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 950 pF
Crss 330 pF
td(on) 24 ns
trVGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 30 ns
td(off) RG= 2 Ω (External) 8 0 ns
tf20 ns
Qg(on) 170 nC
Qgs VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 40 nC
Qgd 105 nC
RthJC 0.31 K/W
RthCK (TO-247) 0.25 K/W
Source-Drain Diode Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
ISVGS = 0 V 72 A
ISM Repetitive 288 A
VSD IF = IS, VGS = 0 V, 1.5 V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
A12.2 2.54 .087 .102
A22.2 2.6 .059 .098
b 1.0 1.4 .040 .055
b11.65 2.13 .065 .084
b22.87 3.12 .113 .123
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
∅P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC
TO-247 AD Outline
Terminals: 1 - Gate 2 - Drain
3 - Source Tab - Drain
1 2 3
TO-268 Outline
Terminals: 1 - Gate 2 - Drain
3 - Source Tab - Drain
Min Recommended Footprint
Trr IF = 25A
-di/dt = 100 A/µs
VR = 100V
QRM
200
2.6
ns
µC
