T4-LDS-0185-3, Rev. 1 (121563) ©2013 Microsemi Corporation Page 1 of 6
2N3700UB
Available on
commercial
versions
Low Power NPN Silicon Transistor
Qualified per MIL-PRF-19500/391
Quali f i ed Lev els:
JAN, JANTX,
JANTXV, and JANS
DESCRIPTION
This 2N3700UB NPN cer amic surface m ount device is mi l itary qualified for high-reliability
applications.
UB Package
Also available in:
TO-18 ( TO-206AA)
(leaded)
2N3700
TO-39 (TO-205AD)
(leaded)
2N3019
TO-5 package
(leaded)
2N3019S
TO-46 ( TO-206AB)
(leaded)
2N3057A
Important: For the latest information, vis it our web site http://www.microsemi.com.
FEATURES
• Sur face mount equiv alent to JEDE C registered 2N3700 number.
• JAN, JANTX, JANTXV and JANS qualifications are available per MIL-PRF-19500/391.
• Rad hard levels are also available per MIL-PRF-19500/391. (Cl ick here for RHA datasheet.)
• RoHS com pliant versions available (commercial grade only).
APPL ICAT IONS / BENEFITS
• Cer ami c UB surface mount pa ckage.
• Lightweight.
• Low power.
• Military and other high-reliability appli cations.
MAXIMUM RATIN GS @ TA = +25 oC unless other wise noted.
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Busine ss P ar k,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
Parameters/Test Conditions
Symbol
Value
Unit
Junction and Storage Temperature
TJ and TSTG
-65 to +200
oC
Thermal Impedance Junction-to-Ambient
R
ӨJA
325
oC/W
Thermal Impedance Junction-to-Case
RӨJSP
90
oC/W
Collector-Emitter Voltage
VCEO
80
V
Collector-Base Voltage
VCBO
140
V
Emitter-Base Voltage
VEBO
7.0
V
Collector Current
IC
1.0
A
Total P ower Dissipation: @ TA = +25 oC (1)
PD
0.5
W
Notes: 1. De rate li near ly 6.6 mW/° C for TA ≥ +25 °C.
T4-LDS-0185-3, Rev. 1 (121563) ©2013 Microsemi Corporation Page 2 of 6
2N3700UB
M ECHANI CAL and PACKAGING
• CASE: Ceramic.
• TERMINALS: Gold plating over nickel under plate.
• MARKING: Part number, date code, manufacturer’s ID.
• TAPE & REEL option: Standard per EIA-481D. Consult factory for quantities.
• WEIGHT: < 0.04 grams.
• See Package Dimensions on last page.
PART NOMENCLATURE
JAN 2N3700 UB e3
Reliability Level
JAN = JAN lev el
JANTX = JANTX level
JANTXV = JANTXV level
JANS = JANS level
Blank = Commercial
JEDEC type number
(see Electrical Characteristics
table)
RoHS Compliance
e3 = RoHS compliant (available
on commercial grade only)
Blank = non-RoHS compliant
Surface Mount Package
SYMBOLS & DEFI NITIONS
Symbol
Definition
f
Frequency
IB
Base cur rent ( dc)
IE
Emitter current (dc)
TA
Ambient temperature
TC
Case temperature
VCB
Collector to base voltage (dc)
VCE
Collector to emitter voltage (dc)
VEB
Emitter to base voltage (dc)
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2N3700UB
ELECTRICAL CHARACTE RISTICS @ TA = +25 °C, unles s otherwise noted
Paramete r s / Test Conditions Symbol Min. Max. Unit
OFF CHARACTERTICS
Collector-Emit ter Breakdown C urrent
IC = 30 mA
V(BR)CEO 80 V
Collector-Base Cutoff Current
VCB = 140 V
ICBO 10 µA
Emitter-Base C utoff Current
VEB = 7 V
IEBO1 10 µA
Collector-Em itter Cutoff Current
VCE = 90 V
ICES 10 nA
Emitter-Base C utoff Current
VEB = 5.0 V
IEBO2 10 nA
ON CHARACTERTICS
Forward-Current Transfer Ratio
I
C
= 150 mA, V
CE
= 10 V
IC = 0.1 mA, VCE = 10 V
IC = 10 mA, VCE = 10 V
IC = 500 mA, VCE = 10 V
IC = 1.0 A, VCE = 10 V
hFE
100
50
90
50
15
300
300
300
Collector-Emitter Saturation Voltage
I
C
= 150 mA , I
B
= 15 mA
IC = 500 mA , IB = 50 mA VCE(sat)
0.2
0.5 V
Base-Emitter S aturation Voltag e
VBE(sat) 1.1 V
IC = 150 mA , IB = 15 mA
DYNAMIC CHARACTERIST ICS
Paramete r s / Test Conditions
Symbol
Min.
Max.
Unit
Small-Signal Short -Circ uit F orward C urrent Transfer Ratio
IC = 1.0 mA, VCE = 5.0 V, f = 1.0 kHz hfe 80 400
Magn itude of Smal l -Signa l Short -Circuit Forward Current
Trans fer Ratio
IC = 50 mA, VCE = 10 V, f = 20 MHz |hfe| 5.0 20
O utput Capac itance
VCB = 10 V, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz Cobo 12 pF
I nput Cap acitance
VEB = 0.5 V, IC = 0, 100 kHz ≤ f ≤ 1.0 MHz Cibo 60 pF
T4-LDS-0185-3, Rev. 1 (121563) ©2013 Microsemi Corporation Page 4 of 6
2N3700UB
ELECTRICAL CHARACTE RISTICS @ TA = +25 °C, unles s otherwise noted ( con tinued)
SAFE OPERATION AREA (See SOA graph below and MIL-STD-750, method 3053)
DC Te sts
TC = 2 5 °C, 1 c yc l e, t = 10 ms
Test 1
2N3700UB
V
CE
= 10 V
IC = 180 mA
Test 2
2N3700UB
V
CE
= 40 V
IC = 45 mA
Test 3
2N3700UB
V
CE
= 80 V
IC = 22.5 mA
(1) P ulse Test: Pulse W i dth = 300 µs, duty cycle ≤ 2.0%.
VCE – COLLECTOR – EMITTER VOLTAGE – V
Max i mum Safe Operating Ar ea (LCC3 at Tsp=25°C)
I
C
– COLL ECTO R CURRENT - A
T4-LDS-0185-3, Rev. 1 (121563) ©2013 Microsemi Corporation Page 5 of 6
2N3700UB
GRAPHS
TA (oC) Ambient
FIGURE 1
Temperature-Power D erating ( RӨJA)
TSP (oC) Solder P ad
FIGURE 2
Temperature-Power D erating ( RӨJSP)
Maximum DC Operation Rating (W)
Maximum DC Operation Rating (W)
T4-LDS-0185-3, Rev. 1 (121563) ©2013 Microsemi Corporation Page 6 of 6
2N3700UB
PACKAGE DIM ENSIONS
Symbol
Dimensions
Note
Symbol
Dimensions
Note
Inch
Millimeters
Inch
Millimeters
Min
Max
Min
Max
Min
Max
Min
Max
BH
.046
.056
1.17
1.42
LS1
.035
.039
0.89
0.99
BL
.115
.128
2.92
3.25
LS2
.071
.079
1.80
2.01
BW
.085
.108
2.16
2.74
LW
.016
.024
0.41
0.61
CL
.128
3.25
r
.008
0.20
CW
.108
2.74
r1
.012
0.31
LL1
.022
.038
0.56
0.96
r2
.022
0.56
LL2
.017
.035
0.43
0.89
NOTES:
1. Dimensions are in inches.
2. Millimeters are given for general information only.
3. Hatched areas on package denote metallized areas.
4. Pad 1 = Base, Pad 2 = Emitter, Pad 3 = Collector, Pad 4 = Shielding connected to the lid.
5. In accordance with ASME Y14.5M, diameters are equivalent to Φx symbology.
Lid
