1
Motorola Thyristor Device Data
  
Reverse Blocking Triode Thyristors
PNPN devices designed for high volume, line-powered consumer applications such
as relay and lamp drivers, small motor controls, gate drivers for larger thyristors, and
sensing and detection circuits. Supplied in an inexpensive plastic T O-226AA package
which is readily adaptable for use in automatic insertion equipment.
Sensitive Gate Trigger Current — 200 µA Maximum
Low Reverse and Forward Blocking Current — 100 µA Maximum, TC = 125°C
Low Holding Current — 5 mA Maximum
Glass-Passivated Surface for Reliability and Uniformity
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.)
Rating Symbol Value Unit
Peak Repetitive Forward and Reverse Blocking Voltage(1)
(TJ = 25 to 125°C, RGK = 1 kMCR100-3
MCR100-4
MCR100-6
MCR100-8
VDRM
and
VRRM 100
200
400
600
Volts
Forward Current RMS (See Figures 1 & 2)
(All Conduction Angles) IT(RMS) 0.8 Amps
Peak Forward Surge Current, TA = 25°C
(1/2 Cycle, Sine Wave, 60 Hz) ITSM 10 Amps
Circuit Fusing Considerations
(t = 8.3 ms) I2t 0.415 A2s
Peak Gate Power — Forward, TA = 25°C PGM 0.1 Watts
Average Gate Power — Forward, TA = 25°C PGF(AV) 0.01 Watt
Peak Gate Current — Forward, TA = 25°C
(300 µs, 120 PPS) IGFM 1 Amp
Peak Gate Voltage — Reverse VGRM 5 Volts
Operating Junction Temperature Range @ Rated VRRM and VDRM TJ–40 to +125 °C
Storage Temperature Range Tstg –40 to +150 °C
Lead Solder Temperature
(
t
1/16
I
from case, 10 s max) +230 °C
1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate
voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current
source such that the voltage ratings of the devices are exceeded.
Preferred devices are Motorola recommended choices for future use and best overall value.
Order this document
by MCR100/D
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SEMICONDUCTOR TECHNICAL DATA
Motorola, Inc. 1995
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SCRs
0.8 AMPERE RMS
100 thru 600 VOLTS
*Motorola preferred devices
CASE 29-04
(TO-226AA)
STYLE 10
K
G
A
KGA
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2 Motorola Thyristor Device Data
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Case RθJC 75 °C/W
Thermal Resistance, Junction to Ambient RθJA 200 °C/W
ELECTRICAL CHARACTERISTICS (TC = 25°C, RGK = 1 k unless otherwise noted.)
Characteristic Symbol Min Max Unit
Peak Forward or Reverse Blocking Current
(VAK = Rated VDRM or VRRM) TC = 25°C
TC = 125°C
IDRM, IRRM
10
100 µA
µA
Forward “On” Voltage(1)
(ITM = 1 A Peak @ TA = 25°C) VTM 1.7 Volts
Gate Trigger Current (Continuous dc)(2) TC = 25°C
(Anode Voltage = 7 Vdc, RL = 100 Ohms) IGT 200 µA
Gate Trigger Voltage (Continuous dc) TC = 25°C
(Anode Voltage = 7 Vdc, RL = 100 Ohms) TC = –40°C
(Anode Voltage = Rated VDRM, RL = 100 Ohms) TC = 125°C
VGT
0.1
0.8
1.2
Volts
Holding Current TC = 25°C
(Anode Voltage = 7 Vdc, initiating current = 20 mA) TC = –40°CIH
5
10 mA
1. Forward current applied for 1 ms maximum duration, duty cycle
p
1%.
2. RGK current is not included in measurement.
C
°
T , MAXIMUM ALLOWABLE CASE TEMPERATURE ( C)
60
°
120
°
180
°
0.4
40
50
60
70
80
90
100
110
0 0.1 0.30.2
120
0.5
α
= 30
°
90
°
dc
CASE MEASUREMENT
POINT — CENTER OF
FLAT PORTION
IT(AV), AVERAGE ON-STATE CURRENT (AMP)
α
FIGURE 1 – MCR100-7, MCR100-8 CURRENT DERATING
(REFERENCE: CASE TEMPERATURE)
α
= CONDUCTION ANGLE
°
TEMPERATURE ( C)
A
α
20
IT(AV), AVERAGE ON-STATE CURRENT (AMP)
0.40 0.1 0.30.2
α
= 30
°
120
°
40
60
80
100
120
FIGURE 2 – MCR100-7, MCR100-8 CURRENT DERATING
(REFERENCE: AMBIENT TEMPERATURE)
T , MAXIMUM ALLOWABLE AMBIENT
60
°
90
°
TYPICAL PRINTED
CIRCUIT BOARD
MOUNTING
α
= CONDUCTION ANGLE
180
°
dc
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3
Motorola Thyristor Device Data
PACKAGE DIMENSIONS
CASE 29-04
(TO–226AA)
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSION D AND J APPLY BETWEEN L AND K
MINIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.
R
A
P
J
L
F
B
K
G
H
SECTION X–X
C
V
D
N
N
X X
SEATING
PLANE DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.175 0.205 4.45 5.20
B0.170 0.210 4.32 5.33
C0.125 0.165 3.18 4.19
D0.016 0.022 0.41 0.55
F0.016 0.019 0.41 0.48
G0.045 0.055 1.15 1.39
H0.095 0.105 2.42 2.66
J0.015 0.020 0.39 0.50
K0.500 ––– 12.70 –––
L0.250 ––– 6.35 –––
N0.080 0.105 2.04 2.66
P––– 0.100 ––– 2.54
R0.115 ––– 2.93 –––
V0.135 ––– 3.43 –––
1
STYLE 10:
PIN 1. CATHODE
2. GATE
3. ANODE
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4 Motorola Thyristor Device Data
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MCR100/D
*MCR100/D*