1
Motorola Thyristor Device Data
Reverse Blocking Triode Thyristors
PNPN devices designed for high volume, line-powered consumer applications such
as relay and lamp drivers, small motor controls, gate drivers for larger thyristors, and
sensing and detection circuits. Supplied in an inexpensive plastic T O-226AA package
which is readily adaptable for use in automatic insertion equipment.
•Sensitive Gate Trigger Current — 200 µA Maximum
•Low Reverse and Forward Blocking Current — 100 µA Maximum, TC = 125°C
•Low Holding Current — 5 mA Maximum
•Glass-Passivated Surface for Reliability and Uniformity
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.)
Rating Symbol Value Unit
Peak Repetitive Forward and Reverse Blocking Voltage(1)
(TJ = 25 to 125°C, RGK = 1 kΩMCR100-3
MCR100-4
MCR100-6
MCR100-8
VDRM
and
VRRM 100
200
400
600
Volts
Forward Current RMS (See Figures 1 & 2)
(All Conduction Angles) IT(RMS) 0.8 Amps
Peak Forward Surge Current, TA = 25°C
(1/2 Cycle, Sine Wave, 60 Hz) ITSM 10 Amps
Circuit Fusing Considerations
(t = 8.3 ms) I2t 0.415 A2s
Peak Gate Power — Forward, TA = 25°C PGM 0.1 Watts
Average Gate Power — Forward, TA = 25°C PGF(AV) 0.01 Watt
Peak Gate Current — Forward, TA = 25°C
(300 µs, 120 PPS) IGFM 1 Amp
Peak Gate Voltage — Reverse VGRM 5 Volts
Operating Junction Temperature Range @ Rated VRRM and VDRM TJ–40 to +125 °C
Storage Temperature Range Tstg –40 to +150 °C
Lead Solder Temperature
(
t
1/16
I
from case, 10 s max) — +230 °C
1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate
voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current
source such that the voltage ratings of the devices are exceeded.
Preferred devices are Motorola recommended choices for future use and best overall value.