©2003 Fairchild Semiconductor Corporation HGTP12N60A4, HGTG12N60A4, HGT1S12N60A4S9A Rev. B2
HGTP12N60A4, HGTG12N60A4,
HGT1S12N60A4S9A
600V, SMPS Series N-Channel IGBTs
The HGTP12N60A4, HGTG12N60A4 and
HGT1S12N60A4S9A are MOS gated high voltage switching
devices combining the best features of MOSFETs and
bipolar transistors. These devices have the high input
impedance of a MOSFET and the low on-state co nduction
loss of a bipolar transistor. The much lower on-state voltage
drop varies only moderately between 25oC and 150oC.
This IGBT is ideal for many high voltage switching
applications operating at high frequencies where low
conduction losses are essential. This device has been
optimized for high frequency switch mode power supplies.
Formerly Developmental Type TA49335.
Symbol
Features
• >100kHz Operation at 390V, 12A
• 200kHz Operation at 390V, 9A
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . . 70ns at TJ = 125oC
• Low Conduction Loss
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards
Packaging
JEDEC TO-220AB ALTERNATE VERSION
JEDEC TO-263AB
JEDEC STYL E T O- 247
Ordering Information
PART NUMBER PACKAGE BRAND
HGTP12N60A4 TO-220AB 12N60A4
HGTG12N60A4 TO-247 12N60A4
HGT1S12N60A4S9A TO-263AB 12N60A4
NOTE: When ordering, use the entire part number.
C
E
G
C
E
G
COLLECTOR
(FLANGE)
G COLLECTOR
(FLANGE)
E
COLLECTOR
(BOTTOM SIDE METAL)
C
E
G
FAIRCHILD CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713
4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637
4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986
4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767
4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027
Data Sheet Au gust 2003
©2003 Fairchild Semiconductor Corporation HGTP12N60A4, HGTG12N60A4, HGT1S12N60A4S9A Rev. B2
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified HGTG12N60A4, HGTP12N60A4,
HGT1S12N60A4S9A UNITS
Collect o r to Em itter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVCES 600 V
Collector Current Continuous
At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25 54 A
At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .C11023 A
Collector Current Pulsed (Note 1 ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM 96 A
Gate to Emitter Voltage Continuo us. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGES ±20 V
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGEM ±30 V
Switching Safe O perating Area at TJ = 150oC, Figure 2 . . . . . . . . . . . . . . . . . . . . . . . . SSOA 60A at 600V
Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD167 W
Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.33 W/oC
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG -55 to 150 oC
Maximum Lead Temperature f or Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
P ackage Body for 10s, See Tech Brief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TPKG 300
260
oC
oC
CAUTION: St resses above those l isted in “A bsolute Maximu m Rating s” may cause per manent d amage to t he device. This is a stress on ly rating and operation o f the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. Pulse width limited by m aximum junct ion temperature.
Electrical Specifications TJ = 25oC, Unless Otherwise Specified
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Collector to Emitter Breakdown Voltage BVCES IC = 250µA, VGE = 0V 600 - - V
Emitter to Collector Breakdown Voltage BVECS IC = -10mA, VGE = 0V 20 - - V
Collector to Emitter Leakage Current ICES VCE = 600V TJ = 25oC - - 250 µA
TJ = 125oC--2.0mA
Collector to Emitter Saturation Voltage VCE(SAT) IC = 12A,
VGE = 15V TJ = 25oC-2.02.7V
TJ = 125oC-1.62.0V
Gate to Emitter Threshold Voltage VGE(TH) IC = 250µA, VCE = 600V - 5.6 - V
Gate to Emitter Leakage Current IGES VGE = ±20V - - ±250 nA
Switching SOA SSOA TJ = 150oC, RG = 10Ω, VGE = 15V
L = 100µH, VCE = 600V 60 - - A
Gate to Emitter Plateau Voltage VGEP IC = 12A, VCE = 300V - 8 - V
On-State Gate Charge Qg(ON) IC = 12A,
VCE = 300V VGE = 15V - 78 96 nC
VGE = 20V - 97 120 nC
Current Turn-On Delay Time td(ON)I IGBT and Diode at TJ = 25oC
ICE = 12A
VCE = 390V
VGE =15V
RG = 10Ω
L = 500µH
Test Circuit (Figure 20)
-17- ns
Current Rise Time trI -8-ns
Current Turn-Off Delay Time td(OFF)I -96- ns
Current Fall Time tfI -18- ns
Turn-On Energy (Note 3) EON1 -55- µJ
Turn-On Energy (Note 3) EON2 - 160 - µJ
Turn-Off Energy (Note 2) EOFF -50- µJ
HGTP12N60 A 4, HG TG12N60A4, HGT1S12N 60A 4 S9A
©2003 Fairchild Semiconductor Corporation HGTP12N60A4, HGTG12N60A4, HGT1S12N60A4S9A Rev. B2
Current Turn-On Delay Time td(ON)I IGBT and Diode at TJ = 125oC
ICE = 12A
VCE = 390V
VGE = 15V
RG = 10Ω
L = 500µH
Test Circuit (Figure 20)
-17- ns
Current Rise Time trI -16- ns
Current Turn-Off Delay Time td(OFF)I - 110 170 ns
Current Fall Time tfI -7095ns
Turn-On Energy (Note 3) EON1 -55- µJ
Turn-On Energy (Note 3) EON2 - 250 350 µJ
Turn-Off Energy (Note 2) EOFF - 175 285 µJ
Thermal Resistance Junction To Case RθJC - - 0.75 oC/W
NOTES:
2. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
3. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. EON1 is the turn-on loss of the IGBT only. EON2
is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specified in
Figure 20.
Electrical Specifications TJ = 25oC, Unless Otherwise Specified (Continued)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Typical Performance Curves Unless Otherwise Specified
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR T O
EMITTER CURRENT FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
TC, CASE TEMPERATURE (oC)
ICE, DC COLLECTOR CURRENT (A)
50
10
0
40
20
30
25 75 100 125 150
60
50
VGE = 15V
VCE, COLLECTOR TO EMITTER VOLTAGE (V) 700
40
0
ICE, COLLECTOR TO EMITTER CURRENT (A)
10
20
300 400200100 500 600
0
50
60
30
70 TJ = 150oC, RG = 10Ω, VGE = 15V, L = 200µH
TCVGE
15V
75oC
fMAX, OPERATING FREQUENCY (kHz)
1
ICE, COLLECTOR TO EMITTER CURRENT (A)
10 3
300
3010 20
500
fMAX1 = 0.05 / (td(OFF)I + td(ON)I)
RØJC = 0.75oC/W, SEE NOTES
PC = CONDUCTION DISSIPATION
(DUTY FA CTOR = 50%)
fMAX2 = (PD - PC) / (EON2 + EOFF)
TJ = 125oC, RG = 10Ω, L = 500µH, VCE = 390V
100
VGE, GATE TO EMITTER VOLTAGE (V)
ISC, PEAK SHORT CIRCUIT CURRENT (A)
tSC, SHORT CIRCUIT WITHSTAND TIME (µs)
9101112 15
0
2
10
16
50
125
175
300
tSC
ISC
20
250
13 14
4
6
8
12
14
18
75
100
150
200
225
275
VCE = 390V, RG = 10Ω, TJ = 125oC
HGTP12N60 A 4, HG TG12N60A4, HGT1S12N 60A 4 S9A
©2003 Fairchild Semiconductor Corporation HGTP12N60A4, HGTG12N60A4, HGT1S12N60A4S9A Rev. B2
FIGURE 5. COLLECTOR T O EMITTER ON-STATE VOLTAGE FIGURE 6. COLLECTOR T O EMITTER ON-STATE V OLTAGE
FIGURE 7. TURN-ON ENERGY LOSS vs COLLECT O R T O
EMITTER CURRENT FIGURE 8. TURN-OFF ENERGY LOSS vs
COLLECTOR TO EMITTER CURRENT
FIGURE 9. TURN-ON DELAY TIME vs COLLECT OR T O
EMITTER CURRENT FIGURE 10. TURN-ON RISE TIME vs COLLECT OR T O
EMITTER CURRENT
Typical Performance Curves Unless Otherwise Specified (Conti nued)
00.51.0
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
ICE, COLLECT OR TO EMITTER CURRENT (A)
0
4
8
1.5 2 2.5
16
20
12
TJ = 125oC
TJ = 150oC
PULSE DURATION = 250µs
DUTY CYCLE < 0.5%, VGE = 12V
24
TJ = 25oC
ICE, COLLECTO R TO EMITTER CURRENT (A)
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
DUTY CYCLE < 0.5%, VGE = 15V
PULSE DURATION = 250µs
TJ = 150oC
TJ = 25oC
TJ = 125oC
0 0.5 1.0 1.5 2 2.5
4
8
16
12
20
24
0
EON2, TURN-ON ENERGY LOSS (µJ)
500
300
ICE, COLLECTOR TO EMITTER CURRENT (A)
400
200
600
0
700
64 10121416818202224
TJ = 125oC, VGE = 12V, VGE = 15V
RG = 10Ω, L = 500µH, VCE = 39 0V
TJ = 25oC, VGE = 12V, VGE = 15V
100
2
300
I
CE
, COLLECT O R TO EMITTER CURRENT (A)
E
OFF
, TURN-OFF ENERGY LOSS (
µ
J)
0
50
200
100
250
350
400
T
J
= 25
o
C, V
GE
= 12V OR 15V
T
J
= 125
o
C, V
GE
= 12V OR 15V
150
642 101214168 18202224
R
G
= 10
Ω
, L = 500
µ
H, V
CE
= 390V
ICE, COLLECTOR TO EMITTER CURRENT (A)
td(ON)I, TURN-ON DELAY TIME (ns)
10
11
12
13
14
15
642 101214168 18202224
16
17
18
TJ = 25oC, TJ = 125oC, VGE = 15V
TJ = 25oC, TJ = 125oC, VGE = 12V
RG = 10Ω, L = 500µH, VCE = 390V
ICE, COLLECTOR TO EMITTER CURRENT (A)
trI, RISE TIME (ns)
0
4
16
12
8
642 10121416818202224
20
32
28
24
RG = 10Ω, L = 500µH, VCE = 390V
TJ = 125oC, OR TJ = 25oC, VGE = 12V
TJ = 25oC OR TJ = 125oC, VGE = 15V
HGTP12N60 A 4, HG TG12N60A4, HGT1S12N 60A 4 S9A
©2003 Fairchild Semiconductor Corporation HGTP12N60A4, HGTG12N60A4, HGT1S12N60A4S9A Rev. B2
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR T O
EMITTER CURRENT FIGURE 12. FALL TIME vs COLLECT OR T O EMITTER
CURRENT
FIGURE 13. TRANSFER CHARACTERISTIC FIGURE 14. GATE CHARGE WAVEFORMS
FIGURE 15. T O TAL SWITCHING LOSS vs CASE
TEMPERATURE FIGURE 16. TOTAL SWITCHING LOSS vs GATE RESISTANCE
Typical Performance Curves Unless Otherwise Specified (Conti nued)
482
95
6
85
90
ICE, COLLECTOR T O EMITTER CURRENT (A)
td(OFF)I, TURN-OFF DELAY TIME (ns)
12
115
1614
105
110
10
100
VGE = 12V, VGE = 15V, TJ = 25oC
VGE = 12V, VGE = 15V, TJ = 125oC
RG = 10Ω, L = 500µH, VCE = 390V
18 20 22 24
ICE, COLLECTOR TO EMITTER CURRENT (A)
tfI, FALL TIME (ns)
10
30
20
50
70
40
60
RG = 10Ω, L = 500µH, VCE = 390V
TJ = 25oC, VGE = 12V OR 15V
TJ = 125oC, VGE = 12V OR 15V
4826 12161410 18 20 22 24
80
90
ICE, COLLECTOR TO EMITTER CURRENT (A)
0
50
100
137 8 9 10 12
VGE, GATE TO EMITTER VOLTAGE (V)
11
150
200
14 15
250
6
PULSE DURATION = 250µs
DUTY CYCLE < 0.5%, VCE = 10V
16
TJ = 125oC
TJ = -55oC
TJ = 25oC
VGE, GATE TO EMITTER VOLTAGE (V)
QG, GATE CHARGE (nC)
2
14
0
4
10
IG(REF) = 1 mA, RL = 25Ω, TC = 25oC
VCE = 200V
VCE = 400V
6
8
12
16
VCE = 600V
10 20 30 40 6050 70 800
ICE = 24A
ICE = 12A
ICE = 6A
0
0.2
0.4
50 75 100
TC, CASE TEMPERATURE (oC)
0.6
1.0
12525 150
1.2
0.8
ETOTAL, TOTAL SWITCHING ENERGY LOSS (mJ)
ETOTAL = EON2 + EOFF
RG = 10Ω, L = 500µH, VCE = 390V, VGE = 15V
0.1 10 100
RG, GATE RESISTANCE (Ω)
1
51000
E
TOTAL
, TOTAL SWITCHING ENERGY LOSS (mJ)
ICE = 12A
ICE = 24A
ICE = 6A
10 TJ = 125oC, L = 500µH, VCE = 390V, VGE = 15V
ETOTAL = EON2 + EOFF
HGTP12N60 A 4, HG TG12N60A4, HGT1S12N 60A 4 S9A
©2003 Fairchild Semiconductor Corporation HGTP12N60A4, HGTG12N60A4, HGT1S12N60A4S9A Rev. B2
FIGURE 17. CAPA CITANCE vs COLL ECT OR T O EMITTER
VOLTAGE FIGURE 18. COLLECT OR T O EMITTER ON-STA TE V OLT A GE
vs GATE TO EMITT ER VOLTA GE
FIGURE 19. IGBT NORMALIZED TRANSIENT THERMAL RE SPONSE, JUNCTION TO CAS E
Test Circuit and Waveforms
FIGURE 20. INDUCTIVE SWITCHING TEST CIRCUIT FIGURE 21. SWITCHING TEST WAVEFORMS
Typical Performance Curves Unless Otherwise Specified (Conti nued)
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
C, CAPACITANCE (nF)
CRES
0 5 10 15 20 25
0
0.5
1.0
2.0
2.5
3.0
1.5
FREQUENCY = 1MHz
COES
CIES
VGE, GATE TO EMITTER VOLTAGE (V)
89
1.9 10 12
2.0
2.2
2.1
11 13 14 15 16
2.3
2.4
VCE, COLLECTOR TO EMITTER VOLTA GE (V)
ICE = 18A
ICE = 12A
ICE = 6A
DUTY CYCLE < 0.5%, VGE = 15V
PULSE DURATION = 250µs, TJ = 25oC
t1, RECTANGULAR PULSE DURATION (s)
ZθJC, NORMALIZED THERMAL RESPONSE
10-2
10-1
100
10-5 10-3 10-2 10-1 100101
10-4
t1
t2
PD
DUTY FACTOR, D = t1 / t2
PEAK TJ = (PD X ZθJC X RθJC) + TC
SINGLE PULSE
0.1
0.2
0.5
0.05
0.01
0.02
RG = 10Ω
L = 500µH
VDD = 390V
+
-
RHRP660
tfI
td(OFF)I trI
td(ON)I
10%
90%
10%
90%
VCE
ICE
VGE
EOFF
EON2
HGTP12N60 A 4, HG TG12N60A4, HGT1S12N 60A 4 S9A
©2003 Fairchild Semiconductor Corporation HGTP12N60A4, HGTG12N60A4, HGT1S12N60A4S9A Rev. B2
Handling Precautions for IGBTs
Insulated Gate Bipolar Transistors are susceptible to
gate-insulation damage by the electrostatic discharge of
energy through the devices. When handling these devices,
care should be exercised to assure that the static charge
bui lt in the handler’s body capacitance is not discharged
through the device. With proper handling and application
procedures, however, IGBTs are currently being extensively
used in production b y nume rous equipment m anuf acturers in
military, industrial and consumer applications, with virtually
no damage problems due to electrostatic discharge. IGBTs
can be handled safely if the following basic precautions are
taken:
1. Prior to assem b ly int o a circui t, all l eads s hould be k ept
shorted together either by the use of metal shorting
springs or by the insertion into conductive material such
as “ECCOSORBD™ LD26” or equivalent.
2. When de vice s are remov ed by hand from thei r carriers,
the hand being u sed shoul d be grou nded b y any suitab le
means - for example, with a metallic wr istband.
3. Tips of soldering irons should be grounded.
4. De vices sho uld n e v er b e ins erted into or remo v e d from
circuits with power on.
5. Gate Voltage Rating - Ne v er e xceed the gate-v oltage
rating of VGEM. Exceedi ng the ra ted VGE can re sult in
permanent damage to the oxide layer in the gate region.
6. Gate Termination - The gates of thes e de vices are
essentially capacitors. Circuits that leave the gate open-
circuit ed or floating shoul d be a v oide d. Thes e condi tions
can resu lt i n turn-on of th e device due to v o lta ge buildup
on the input capacitor due to leakage cu rrents or pickup.
7. Gate Protection - The se de vices do no t hav e an internal
monolithic Zener diode from gate to emitter. If gate
protection is required an external Zener is recommended.
Operating Frequency Information
Operating frequency information for a typical device
(Figure 3) is pres ented as a guide for estimating device
performance for a specific application. Other typical
frequency vs collector current (ICE) plots are possible using
the inf o rmation s hown f or a ty pical un it in Figure s 5, 6, 7, 8, 9
and 11. The operating frequency plot (Figure 3) of a typical
device shows fMAX1 or fMAX2; whichever is smaller at each
point. The information is based on measurements of a
typical device and is bounded by the maximum rated
junction temperature.
fMAX1 is defined by fMAX1 = 0.05/(td(OFF)I+ td(ON)I).
Deadti me (the de nominato r) has bee n arbit rarily held to 10%
of the on-state time for a 50% duty factor. Other definitions
are possible. td(OFF)I and td(ON)I are define d in Figure 21 .
Device turn-off delay can establish an additional frequency
limiting condition for an application other than TJM.
fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON2). The
allow able dissipation (PD) is defined by PD = (TJM - TC)/RθJC.
The sum of device switching and conduction losses must not
exceed PD. A 50% duty factor was used (Figure 3) and the
conduction losses (PC) are approx imated b y
PC=(V
CE xI
CE)/2.
EON2 and EOFF are defined in the switching waveforms
shown in Figure 21. EON2 is the integ ral of the
instantaneous power loss (ICE x VCE) during turn-on an d
EOFF is the integr al of the instan tan eou s po wer loss
(ICE xV
CE) during turn-off . All tai l los se s are incl ude d in the
calculation for EOFF; i.e., the collector curre nt equals zer o
(ICE = 0).
HGTP12N60 A 4, HG TG12N60A4, HGT1S12N 60A 4 S9A
Rev. I5
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHE R NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or s yst ems are dev ices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
ACEx™
ActiveArray™
Bottomless™
CoolFET™
CROSSVOLT™
DOME™
EcoSPARK™
E2CMOS™
EnSigna™
FACT™
FACT Quiet Series™
FAST®
FASTr™
FRFET™
GlobalOptoisolator™
GTO™
HiSeC™
I2C™
ImpliedDisconnect™
ISOPLANAR™
LittleFET™
MICROCOUPLER™
MicroFET™
MicroPak™
MICROWIRE™
MSX™
MSXPro™
OCX™
OCXPro™
OPTOLOGIC®
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerTrench®
QFET®
QS™
QT Optoelectronics™
Quiet Serie s™
RapidConfigure™
RapidConnect™
SILENT SWITCHER®
SMART START™
SPM™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic®
TINYOPTO™
TruTranslation™
UHC™
UltraFET®
VCX™
Across the board. Around the world.™
The Power Franchise™
Programmable Active Droop™
Datasheet Identification Product Status Definition
Advance Inf ormation Formative or In
Design This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary First Production This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Sem iconducto r reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete Not In Production This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for ref erence information only.
