Sep.2000
B
C
F
D
Q
A
S
S
G
K
L
M
E
EH
H
P - DIA. (2 TYP.)
R - M5 THD (3 TYP.)
N
C2E1
JNJJ
C1E2
G1 E1 E2 G2
E1
C1
E2
TAB#110 t=0.5
G1
E2
G2
C2E1
Dimensions Inches Millimeters
A 3.70 94.0
B 3.150±0.01 80.0±0.25
C 1.89 48.0
D 1.18 Max. 30.0 Max.
E 0.90 23.0
F 0.83 21.2
G 0.71 18.0
H 0.67 17.0
J 0.63 16.0
Dimensions Inches Millimeters
K 0.51 13.0
L 0.47 12.0
M 0.30 7.5
N 0.28 7.0
P 0.256 Dia. Dia. 6.5
Q 0.31 8.0
R M5 Metric M5
S 0.16 4.0
Description:
Mitsubishi IGBT Modules are de-
signed for use in switching applica-
tions. Each module consists of two
IGBTs in a half-bridge configuration
with each transistor having a re-
verse-connected super-fast recov-
er y free-wheel diode. All compo-
nents and interconnects are iso-
lated from the heat sinking base-
plate, offer ing simplified system as-
sembly and thermal management.
Features:
uLow Drive Power
uLow VCE(sat)
uDiscrete Super-Fast Recovery
Free-Wheel Diode
uHigh Frequency Operation
uIsolated Baseplate for Easy
Heat Sinking
Applications:
uAC Motor Control
uMotion/Servo Control
uUPS
uWelding Power Supplies
Ordering Information:
Example: Select the complete part
module number you desire from
the table below -i.e. CM150DY-12H
is a 600V (VCES), 150 Ampere
Dual IGBT Module.
Type Current Rating VCES
Amperes Volts (x 50)
CM 150 12
Outline Drawing and Circuit Diagram
MITSUBISHI IGBT MODULES
CM150DY-12H
HIGH POWER SWITCHING USE
INSULATED TYPE
Sep.2000
MITSUBISHI IGBT MODULES
CM150DY-12H
HIGH POWER SWITCHING USE
INSULA TED TYPE
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
Symbol Ratings Units
Junction Temper ature Tj–40 to 150 °C
Storage Temperature Tstg –40 to 125 °C
Collector-Emitter Voltage (G-E SHORT) VCES 600 Volts
Gate-Emitter Voltage (C-E SHORT) VGES ±20 Volts
Collector Current (TC = 25°C) IC150 Amperes
Peak Collector Current ICM 300* Amperes
Emitter Current** (TC = 25°C) IE150 Amperes
Peak Emitter Current** IEM 300* Amperes
Maximum Collector Dissipation (TC = 25°C, Tj ≤ 150°C) Pc600 Watts
Mounting Torque, M5 Main Terminal – 1.47 ~ 1.96 N · m
Mounting Torque, M6 Mounting – 1.96 ~ 2.94 N · m
Weight – 270 Grams
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) Viso 2500 Vrms
*Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Static Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Collector-Cutoff Current ICES VCE = VCES, VGE = 0V – – 1.0 mA
Gate Leakage Current IGES VGE = VGES, VCE = 0V – – 0.5 µA
Gate-Emitter Threshold Voltage VGE(th) IC = 15mA, VCE = 10V 4.5 6.0 7.5 Volts
Collector-Emitter Saturation Voltage VCE(sat) IC = 150A, VGE = 15V – 2.1 2.8** Volts
IC = 150A, VGE = 15V, Tj = 150°C – 2.15 – Volts
Total Gate Charge QGVCC = 300V, IC = 150A, V GE = 15V – 450 – nC
Emitter-Collector Voltage VEC IE = 150A, VGE = 0V – – 2.8 Volts
** Pulse width and repetition rate should be such that device junction temperature rise is negligible.
Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Input Capacitance Cies – – 15 nF
Output Capacitance Coes VGE = 0V, VCE = 10V – – 5.3 nF
Reverse Transfer Capacitance Cres – – 3 nF
Resistive Turn-on Delay Time td(on) – – 200 ns
Load Rise Time trVCC = 300V, IC = 150A, – – 550 ns
Switching Turn-off Delay Time td(off) VGE1 = VGE2 = 15V, RG = 4.2Ω– – 300 ns
Times F all Time tf– – 300 ns
Diode Reverse Recovery Time trr IE = 150A, diE/dt = –300A/µs – – 110 ns
Diode Reverse Recovery Charge Qrr IE = 150A, diE/dt = –300A/µs – 0.41 – µC
Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Thermal Resistance, Junction to Case Rth(j-c) Per IGBT – – 0.21 °C/W
Thermal Resistance, Junction to Case Rth(j-c) Per FWDi – – 0.47 °C/W
Contact Thermal Resistance Rth(c-f) Per Module, Thermal Grease Applied – – 0.065 °C/W
Sep.2000
MITSUBISHI IGBT MODULES
CM150DY-12H
HIGH POWER SWITCHING USE
INSULA TED TYPE
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
COLLECTOR CURRENT, IC, (AMPERES)
OUTPUT CHARACTERISTICS
(TYPICAL)
300
0246810
150
50
0
VGE = 20V
15 12
11
8
7
Tj = 25oC
100
200
250
10
9
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
COLLECTOR CURRENT, IC, (AMPERES)
TRANSFER CHARACTERISTICS
(TYPICAL)
300
048121620
200
150
100
50
0
VCE = 10V
Tj = 25°C
Tj = 125°C
250
COLLECTOR-CURRENT, IC, (AMPERES)
COLLECTOR-EMITTER
SATURATION VOLTAGE, VCE(sat), (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
5
0 100 200 300
4
3
2
1
0
VGE = 15V
Tj = 25°C
Tj = 125°C
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE, VCE(sat), (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
10
048121620
8
6
4
2
0
Tj = 25°C
IC = 60A
IC = 300A
IC = 150A
0 0.8 1.6 2.4 3.2 4.0
10
1
EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
10
2
10
3
EMITTER CURRENT, IE, (AMPERES)
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
CAPACITANCE, Cies, Coes, Cres, (nF)
CAPACITANCE VS. VCE
(TYPICAL)
10
-1
10
0
10
2
10
2
10
1
10
0
10
-1
VGE = 0V
10
1
Cies
Coes
Cres
COLLECTOR CURRENT, IC, (AMPERES)
SWITCHING TIME, (ns)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
10
3
10
1
10
2
10
3
10
2
10
1
td(off)
td(on)
tr
VCC = 300V
VGE = ±15V
RG = 4.2Ω
Tj = 125°C
tf
EMITTER CURRENT, IE, (AMPERES)
REVERSE RECOVERY TIME, trr, (ns)
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
10
3
10
1
10
2
10
3
10
2
10
1
trr
Irr
di/dt = -300A/µsec
Tj = 125°C
10
2
10
1
10
0
REVERSE RECOVERY CURRENT, Irr, (AMPERES)
GATE CHARGE, QG, (nC)
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
GATE CHARGE, VGE
20
0 100 200 300 400 500
16
12
8
4
0
VCC = 200V
I
C
= 150A
600
VCC = 300V
Tj = 25°C
Sep.2000
MITSUBISHI IGBT MODULES
CM150DY-12H
HIGH POWER SWITCHING USE
INSULA TED TYPE
TIME, (s)
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT)
101
10-5 10-4 10-3
100
10-1
10-2
10-3
10-3 10-2 10-1 100101
Single Pulse
TC = 25°C
Per Unit Base = Rth(j-c) = 0.21°C/W
Z
th
= R
th
• (NORMALIZED VALUE)
10-1
10-2
10-3
TIME, (s)
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(FWDi)
101
10-5 10-4 10-3
100
10-1
10-2
10-3
10-3 10-2 10-1 100101
Single Pulse
TC = 25°C
Per Unit Base = Rth(j-c) = 0.47°C/W
Z
th
= R
th
• (NORMALIZED VALUE)
10-1
10-2
10-3
