e PTB 20202 125 Watts, 1465-1513 MHz Cellular/DAB RF Power Transistor Description The 20202 is an NPN common emitter RF power transistor intended for 26 Vdc class AB operation from 1.45 to 1.52 GHz. Rated at 125 watts minimum output power, it is specifically intended for cellular and DAB power applications. Ion implantation, nitride surface passivation and gold metallization ensure excellent device reliability. 100% lot traceability is standard. 125 Watts, 1465-1513 MHz Class AB Characteristics Gold Metallization Silicon Nitride Passivated Typical Output Power vs. Input Power 160 Output Power (Watts) 140 120 100 2020 2 LOT 80 COD E 60 VCC = 26 V 40 ICQ = 250 mA Total f = 2000 MHz 20 0 0 3 6 9 12 15 18 21 Input Power (Watts) Package 20225 Maximum Ratings Parameter Symbol Value Unit Collector-Emitter Voltage VCER 50 Vdc Collector-Base Voltage VCBO 50 Vdc Emitter-Base Voltage (collector open) VEBO 4.0 Vdc Collector Current (continuous) per side IC 14.5 Adc Total Device Dissipation at Tflange = 25C PD 520 Watts 3.0 W/C Above 25C derate by Storage Temperature Range TSTG -40 to +150 C Thermal Resistance (Tflange = 70C) RJC 0.34 C/W This product not recommended or specified for CW or class A operation. Recommend two PTB 20173 for these applications. 1 9/28/98 e PTB 20202 Electrical Characteristics (100% Tested) Characteristic Conditions Symbol Min Typ Max Units Breakdown Voltage C to E VBE = 0 V, IC = 60 mA V(BR)CES 50 -- -- Volts Breakdown Voltage C to E IC = 60 mA, RBE = 27 V(BR)CER 40 -- -- Volts Breakdown Voltage E to B IC = 0 A, IE = 25 mA V(BR)EBO 4.0 5.0 -- Volts DC Current Gain VCE = 5 V, IC = 300 mA hFE 20 50 120 -- Symbol Min Typ Max Units Gpe 8.0 9.0 -- dB P-1dB 125 -- -- Watts IMD -- -32 -- dBc -- -- 5:1 -- RF Specifications (100% Tested) Characteristic Gain (VCC = 26 Vdc, Pout = 40 W, ICQ = 250 mA total, f = 1.5 GHz) Gain Compression (VCC = 26 Vdc, ICQ = 250 mA total, f = 1.5 GHz) Intermodulation Distortion (VCC = 26 Vdc, Pout = 125 W(PEP), ICQ = 125 mA total, f1 = 1.501 GHz, f2 = 1.500 GHz) Load Mismatch Tolerance (VCC = 26 Vdc, Pout = 62.5 W, ICQ = 250 mA total, f = 1.5 GHz --all phase angles at frequency of test) 140 Gain 120 VCC = 26 V 10 ICQ = 250 mA Total 100 9 80 Gain (dB) 8 7 1400 Efficiency (%) 1450 1500 1550 60 40 1600 50 8 Efficiency (%) 6 VCC = 26 V 4 ICQ = 250 mA Pout = 60 W 0 1465 Return Loss (dB) -15 20 -25 10 1477 1489 1501 Frequency (MHz) 2 40 - 30 5 2 Frequency (MHz) 5/15/98 60 Gain (dB) Gain (dB) Output Power (W) 11 Output Power & Efficiency 160 12 Broadband Test Fixture Performance 10 -35 0 1513 Return Loss (dB) Typical POUT, Gain & Efficiency (at P-1dB) vs. Frequency Efficiency (%) Typical Performance e PTB 20202 Intermodulation Distortion vs. Power Output Power Gain vs. Output Power -30 10 9 -32 IMD (dBc) Power Gain (dB) ICQ = 250 mA ICQ = 125 mA 8 VCC = 26 V f = 1500 MHz ICQ = 75 mA -34 -36 VCC = 26 V -38 ICQ = 125 mA Total -40 f1 = 1.501 GHz f2 = 1.500 GHz 7 -42 1.0 10.0 100.0 1000.0 25 50 Output Power (Watts) 75 Output Power vs. Supply Voltage Output Power (Watts) 150 140 130 120 ICQ = 250 mA f = 1.50 GHz 110 100 22 23 24 25 26 27 Supply Voltage (Volts) Impedance Data (VCC = 26 Vdc, Pout = 40 W, ICQ = 250 mA total) Z Source Frequency Z Load Z Source Z Load MHz R jX R jX 1.40 6.8 -6.6 5.4 -5.3 1.45 6.4 -7.2 7.0 -7.0 1.50 8.0 -9.4 8.4 -6.4 1.55 11.4 -6.0 7.2 -4.0 1.60 10.4 -5.8 5.0 -2.8 5/15/98 100 Output Power (Watts-PEP) 3 Z0 = 50 125 e PTB 20202 Test Circuit Block Diagram for f = 1.5 GHz Q1 l1, l2, l19, l20 l3, l4 l5, l6 l7, l8 l9, l10 l11, l12 l13, l14 l15, l16 l17, l18 PTB 20202 NPN RF Transistor .25 1.5 GHz Microstrip 50 .0850 1.5 GHz Microstrip 80 .0352 1.5 GHz Microstrip 22 .0395 1.5 GHz Microstrip 16 .0707 1.5 GHz Microstrip 13 .0437 1.5 GHz Microstrip 9.91 .0303 1.5 GHz Microstrip 13 .0748 1.5 GHz Microstrip 20 .2520 1.5 GHz Microstrip 75 Artwork (1 inch Ericsson Components RF Power Products 675 Jarvis Drive Morgan Hill, CA 95037 USA Telephone: 408-778-9434 L1, L2 L3, L4 L5, L6 C1, C2 C3-8, C17, C18 C9, C11, C13, C15 C10, C12, C14, C16 R1, R2 T1, T2 Board 6.8 nH SMT Inductor 56 nH SMT Inductor 4 mm. SMT Ferrite 0 - 4 pF Johanson Piston Trimmer 33 pF (B ATC 100) .1 F 1206 10 F SMT Tantalum 22 SMT UT 70-50 0.031" G200, Solid Copper Bottom, AlliedSignal ) 1-877-GOLDMOS (1-877-465-3667) e-mail: rfpower@ericsson.com www.ericsson.com/rfpower 4 Specifications subject to change without notice. L2 (c) 1997 Ericsson Inc. EUS/KR 1301-PTB 20202 Uen Rev. B 09-28-98