SD103AWS-G, SD103BWS-G, SD103CWS-G
www.vishay.com Vishay Semiconductors
Rev. 1.6, 01-Jun-17 1Document Number: 81142
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Small Signal Schottky Diodes
DESIGN SUPPORT TOOLS click logo to get started
MECHANICAL DATA
Case: SOD-323
Weight: approx. 4.0 mg
Packaging codes/options:
18/10K per 13" reel (8 mm tape), 10K/box
08/3K per 7" reel (8 mm tape), 15K/box
FEATURES
• The SD103 series is a metal-on-silicon Schottky
barrier device which is protected by a PN
junction guardring
• The low forward voltage drop and fast switching
make it ideal for protection of MOS devices,
steering, biasing, and coupling diodes for fast
switching and low logic level applications
• Other applications are click suppression,
efficient full wave bridges in telephone subsets,
and blocking diodes in rechargeable low voltage
battery systems
• For general purpose applications
• AEC-Q101 qualified available
• Base P/N-G3 - green, commercial grade
• Base P/N-HG3 - green, AEC-Q101 qualified
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
Note
(1) Valid provided that electrodes are kept at ambient temperature
Note
(1) Valid provided that electrodes are kept at ambient temperature
Available
Models
PARTS TABLE
PART ORDERING CODE CIRCUIT CONFIGURATION TYPE MARKING REMARKS
SD103AWS-G SD103AWS-G3-08 or SD103AWS-G3-18 Single Z6
Tape and reel
SD103AWS-HG3-08 or SD103AWS-HG3-18
SD103BWS-G SD103BWS-G3-08 or SD103BWS-G3-18 Single Z7
SD103BWS-HG3-08 or SD103BWS-HG3-18
SD103CWS-G SD103CWS-G3-08 or SD103CWS-G3-18 Single Z8
SD101CWS-HG3-08 or SD101CWS-HG3-18
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION PART SYMBOL VALUE UNIT
Repetitive peak reverse voltage
SD103AWS-G VRRM 40 V
SD103BWS-G VRRM 30 V
SD103CWS-G VRRM 20 V
Forward continuous current (1) IF350 mA
Single cycle surge 10 μs square wave IFSM 2A
Power dissipation (1) Ptot 200 mW
THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Thermal resistance junction to ambient air (1) RthJA 500 K/W
Junction temperature Tj125 °C
Operating temperature range Top -55 to +125 °C
Storage temperature range Tstg -55 to +150 °C
SD103AWS-G, SD103BWS-G, SD103CWS-G
www.vishay.com Vishay Semiconductors
Rev. 1.6, 01-Jun-17 2Document Number: 81142
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
Fig. 1 - Typical Variation of Forward Current vs. Forward Voltage
Fig. 2 - Typical High Current Forward Conduction Curve
Fig. 3 - Typical Variation of Reverse Current at Various
Temperatures
Fig. 4 - Diode Capacitance vs. Reverse Voltage
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
Leakage current
VR = 30 V SD103AWS-G IR5μA
VR = 20 V SD103BWS-G IR5μA
VR = 10 V SD103CWS-G IR5μA
Forward voltage drop IF = 20 mA VF370 mV
IF = 200 mA VF600 mV
Diode capacitance VR = 0 V, f = 1 MHz CD50 pF
Reverse recovery time IF = IR = 50 mA to 200 mA,
recover to 0.1 IRtrr 10 ns
18488
0.01
1000
100
0.1
1
10
0 0.4 0.6 0.8 1.00.2
I - Forward Current (mA)
F
VF- Forward Voltage (V)
18489
4
5
3
2
0
1
0.5 1.001.5
I - Forward Current (A)
F
VF- Forward Voltage (V)
duty cycle = 2 %
tp= 300 ms
0.01
0.1
1
10
100
1000
0 5 10 15 20 25 30 35 40 45 50
V - Reverse Voltage (V)
I
R
- Reverse Current (µA)
R
20084
75 °C
50 °C
25 °C
100 °C
T
amb
= 125 °C
18491
10 20 30 40 050
C- Diode Capacitance (pF)
D
V
R - Reverse Voltag e (V)
100
10
1
SD103AWS-G, SD103BWS-G, SD103CWS-G
www.vishay.com Vishay Semiconductors
Rev. 1.6, 01-Jun-17 3Document Number: 81142
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 5 - Blocking Voltage Deration vs. Temperature at Various Average Forward Currents
PACKAGE DIMENSIONS in millimeters (inches): SOD-323
Tamb - Ambient Temperature (°C)
18492
100 2000
VR- Reverse Voltage (V)
30
10
40
20
0
50
= 400 mAIF
100 mA
200 mA
Rev. 6 - Date: 23.Sept.2016
17443
Document no.: S8-V-3910.02-001 (4)
Created - Date: 24.August.2004
Footprint recommendation:
0.6 [0.024]
1.1 [0.043]
1.5 [0.059]
2.50 [0.098]
2.85 [0.112]
1.60 [0.063]
1.95 [0.077]
0° - 8°
0.25 [0.010]
0.40 [0.016]
Cathode bar
0.20 [0.008]
0.40 [0.016]
0.8 [0.031]
0.2 [0.008]
1.15 [0.045]
0.10 [0.004]
0.1 [0.004] max.
0.15 [0.006]
1.6 [0.063]
0.8 [0.031] 0.8 [0.031]
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Revision: 08-Feb-17 1Document Number: 91000
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