© Freescale Semiconductor, Inc., 2005. All rights reserved.
Freescale Semiconductor
Technical Data
Freescale reserves the right to change the detail specifications as may be required to permit improvements in the design of its
products.
Document Number: MBC13900/D
Rev. 1.1, 06/2005
MBC13900
(Scale 2:1)
Package Information
Plastic Package
Case 318M
(SOT-343)
Ordering Information
Device
Device Marking or
Operating
Temperature Range
Package
MBC13900T11900 SOT-343
MBC13900NT1190N SOT-343
1See Ta b l e 1 .
1 Introduction
The MBC13900 is a high performance transistor
fabricated using a 15 GHz fτ bipolar IC process. It is
housed in the 4-lead SC-70 (SOT-343) surface mount
plastic package resulting in a parasitic effect reduction
and RF performance enhancements. The high
performance at low power makes the MBC13900
suitable for front-end applications in portable wireless
systems such as pagers, cellular and cordless phones.
• Low Noise Figure, NFmin = 0.8 dB (Typ) @
0.9 GHz, 2.0 V and 5.0 mA
• Maximum Stable Gain, 22 dB @ 0.9 GHz, 2.0 V
and 5.0 mA
• Output Third Order Intercept,
OIP3 = 18 dBm (Typ) @ 2.0 V and 5.0 mA
• Ultra small SOT-343 Surface Mount Package
• Available Only in Tape and Reel Packaging
• Available in a lead free version
(device number MBC13900NT1) (See Table 1.)
MBC13900
NPN Silicon Low Noise Transistor
Contents
1 Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . 1
2 Ordering Information . . . . . . . . . . . . . . . . . . . 2
3 Electrical Specifications . . . . . . . . . . . . . . . . 2
4 Typical Performance Characteristics . . . . . . 4
5 Applications Information . . . . . . . . . . . . . . . . 9
6 Packaging . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
7 Product Documentation . . . . . . . . . . . . . . . . 23
Ordering Information
MBC13900 Technical Data, Rev. 1.1
2Freescale Semiconductor
Figure 1. Pin Connections
2 Ordering Information
Table 1 provides additional details on MBC13900 orderable parts.
3 Electrical Specifications
Table 1. Orderable Parts Details
Device Operating Temp
Range (TA.) Package Lead Frame RoHS
Compliant PB-Free MSL
Level
Solder
Temp
MBC13900T1 -40° to 85° C Tape and Reel Pb Plate - No - -
MBC13900NT1 -40° to 85° C Tape and Reel Pb Free Yes Yes 1 260 °C
Table 2. Maximum Ratings
Rating Symbol Value Unit
Collector-Emitter Voltage VCEO 6.5 Vdc
Collector-Base Voltage VCBO 8.0 Vdc
Emitter-Base Voltage VEBO 3.0 Vdc
Power Dissipation @ TC = 75°C
Derate Linearity above TC = 75°C at
PD(max) 0.188
2.5
W
mW/°C
Collector Current-Continuous IC20 mA
Maximum Junction Temperature TJ(max) 150 °C
Storage Temperature Tstg -55 to 150 °C
Note: Maximum Ratings and ESD
1. Maximum Ratings are those values beyond which damage to the device may occur. Functional operation should be
restricted to the limits in the Electrical Characteristics or Recommended Operating Conditions tables.
2. ESD (electrostatic discharge) immunity meets Human Body Model (HBM) ≤400 V and Machine Model (MM) ≤50 V.
Additional ESD data available upon request.
4
1
32
Base
Emitter
Collector
Emitter
Electrical Specifications
MBC13900 Technical Data, Rev. 1.1
Freescale Semiconductor 3
Table 3. Thermal Characteristic
Characteristic Symbol Max Unit
Thermal Resistance, Junction-to-Case RθJC 400 °C/W
Note: To calculate the junction temperature use TJ = (PD x RθJC) + TC. The case temperature measured on collector
lead adjacent to the package body.
Table 4. Electrical Characteristics
Characteristic Symbol Min Typ Max Unit
OFF Characteristic1
Collector-Emitter Breakdown Voltage (IC = 0.1 mA, IB = 0) V(BR)CEO 6.5 7.5 - Vdc
Collector-Base Breakdown Voltage (IC = 0.1 mA, IE = 0) V(BR)CBO 8.0 12 - Vdc
Emitter-Base Breakdown Voltage (IE = 0.1 mA, IC = 0) V(BR)EBO 3.0 4.0 - Vdc
Collector Cutoff Current (VCB = 7.0 V, IE = 0) ICBO --0.1µA
Emitter Cutoff Current (VEB = 2.0 V, IC = 0) IEBO --0.1µA
Base Cutoff Current (VCE = 5.0 V, IB = 0) ICEO --0.1µA
ON Characteristic1
DC Current Gain (VCE = 2.0 V, IC = 5.0 mA) hFE 100 - 200 -
Dynamic Characteristics
Current Gain Bandwidth Product
(VCE = 2.0 V, IC = 15 mA, f = 0.9 GHz)
fτ-15-GHz
Performance Characteristic
Insertion Gain
(VCE = 2.0 V, IC = 5.0 mA, f = 0.9 GHz)
(VCE = 2.0 V, IC = 5.0 mA, f = 1.9 GHz)
(VCE = 3.0 V, IC = 3.0 mA, f = 0.9 GHz)
(VCE = 3.0 V, IC = 3.0 mA, f = 1.9 GHz)
|S21|2
18.5
13.5
16.5
12.5
19.5
14.5
17.5
13.5
-
-
-
-
dB
Maximum Stable Gain and/or Maximum Available Gain
[Note 2]
(VCE = 2.0 V, IC = 5.0 mA, f = 0.9 GHz)
(VCE = 2.0 V, IC = 5.0 mA, f = 1.9 GHz)
(VCE = 3.0 V, IC = 3.0 mA, f = 0.9 GHz)
(VCE = 3.0 V, IC = 3.0 mA, f = 1.9 GHz)
MSG, MAG
22
18
21
17.5
23
19
22
18.5
-
-
-
-
dB
Minimum Noise Figure
(VCE = 2.0 V, IC = 5.0 mA, f = 0.9 GHz)
(VCE = 2.0 V, IC = 5.0 mA, f = 1.9 GHz)
(VCE = 3.0 V, IC = 3.0 mA, f = 0.9 GHz)
(VCE = 3.0 V, IC = 3.0 mA, f = 1.9 GHz)
NFmin
-
-
-
-
0.8
0.9
0.8
0.9
0.9
1.1
0.9
1.1
dB
Associated Gain at Minimum Noise Figure
(VCE = 2.0 V, IC = 5.0 mA, f = 0.9 GHz)
(VCE = 2.0 V, IC = 5.0 mA, f = 1.9 GHz)
(VCE = 3.0 V, IC = 3.0 mA, f = 0.9 GHz)
(VCE = 3.0 V, IC = 3.0 mA, f = 1.9 GHz)
GNF
-
-
-
-
22
16
21
15
-
-
-
-
dB
Typical Performance Characteristics
MBC13900 Technical Data, Rev. 1.1
4Freescale Semiconductor
4 Typical Performance Characteristics
Figure 2. Capacitance versus Voltage
Figure 3. hFE, DC Current Gain versus Collector Current
Output Third Order Intercept [Note 3]
(VCE = 2.0 V, IC = 5.0 mA, f = 0.9 GHz)
(VCE = 2.0 V, IC = 5.0 mA, f = 1.9 GHz)
(VCE = 3.0 V, IC = 3.0 mA, f = 0.9 GHz)
(VCE = 3.0 V, IC = 3.0 mA, f = 1.9 GHz)
OIP3
-
-
-
-
18
21
13.5
19
-
-
-
-
dBm
Note: 1. Pulse width ≤300 µs, duty cycle ≤2% pulsed.
2. Maximum Available Gain and Maximum Stable Gain are defined by the K factor as follows:
, if K > 1, , if K < 1
3. Zin and Zout matched for optimum IP3.
Table 4. Electrical Characteristics (continued)
Characteristic Symbol Min Typ Max Unit
MAG
S21
S12
---------- K K 21–±
⎝⎠
⎛⎞
=MSG S21
S12
----------
=
VCB, REVERSE VOLTAGE (V)
4.03.52.51.51.00
0.35
0.2
0.15
0
0.05
0.3
C, CAPACITANCE (pF)
Cob
Ccb
f = 1.0 MHz
0.5 2.0 3.0
0.1
0.25
162
2.0 V
3.0 V
160
158
156
154
152
150
148
hFE, DC CURRENT GAIN
IC, COLLECTOR CURRENT (mA)
0 2.0 4.0 6.0 8.0 10 12 14 16 18 20
Typical Performance Characteristics
MBC13900 Technical Data, Rev. 1.1
Freescale Semiconductor 5
Figure 4. Gain-Bandwidth Product versus Collector Current
Figure 5. Gain-Bandwidth Product versus Collector Current
Figure 6. Maximum Stable/Available gain and Forward Insertion Gain versus Frequency
20
2.0
16
0
2.0 V
IC, COLLECTOR CURRENT (mA)
3.0 V
14
12
10
8.0
6.0
4.0
2.0 4.0 6.0 8.0 10 12 14 16 18
f = 900 MHz
fτ, GAIN BANDWIDTH PRODUCT (GHz)
2.0
16
0
3.0 V
f = 1.9 GHz
IC, COLLECTOR CURRENT (mA)
2.0 V
14
12
10
8.0
6.0
4.0
2.0 4.0 6.0 8.0 10 12 14 16 18 20
fτ, GAIN BANDWIDTH PRODUCT (GHz)
5.5
5.0
35
0
|S21|2
MSG
VCE = 2.0 V
IC = 5.0 mA
f, FREQUENCY (GHz)
MAG
30
25
20
15
10
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
MSG, MAXIMUM STABLE GAIN; MAG, MAXIMUM
AVAILABLE GAIN; |S
21
|
2
, FORWARD INSERTION GAIN (dB)
Typical Performance Characteristics
MBC13900 Technical Data, Rev. 1.1
6Freescale Semiconductor
Figure 7. Maximum Stable/Available gain and Forward Insertion Gain versus Frequency
Figure 8. Maximum Stable/Available gain and Forward Insertion Gain versus Collector Current
Figure 9. Maximum Stable/Available gain and Forward Insertion Gain versus Collector Current
5.0
35
0
f, FREQUENCY (GHz)
30
25
20
15
10
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
MSG, MAXIMUM STABLE GAIN; MAG, MAXIMUM
AVAILABLE GAIN; |S
21
|
2
, FORWARD INSERTION GAIN (dB)
VCE = 3.0 V
IC = 3.0 mA
MAG
|S21|2
MSG
IC, COLLECTOR CURRENT (mA)
|S21|2 1.9 GHz
VCE = 2.0 V
MSG/MAG 1.9 GHz
|S21|2 900 MHz
MSG/MAG 900 MHz
MSG, MAXIMUM STABLE GAIN; MAG, MAXIMUM
AVAILABLE GAIN; |S
21
|
2
, FORWARD INSERTION GAIN (dB)
200 2.0 4.0 6.0 8.0 10 12 14 16 18
6.0
26
24
22
20
18
16
14
12
10
8.0
7.0
27
25
23
21
19
17
15
13
11
9.0
IC, COLLECTOR CURRENT (mA)
MSG, MAXIMUM STABLE GAIN; MAG, MAXIMUM
AVAILABLE GAIN; |S
21
|
2
, FORWARD INSERTION GAIN (dB)
VCE = 3.0 V
|S21|2 1.9 GHz
MSG/MAG 1.9 GHz
|S21|2 900 MHz
MSG/MAG 900 MHz
200 2.0 4.0 6.0 8.0 10 12 14 16 18
Typical Performance Characteristics
MBC13900 Technical Data, Rev. 1.1
Freescale Semiconductor 7
Figure 10. Minimum Noise Figure and Associated Gain versus Frequency
Figure 11. Minimum Noise Figure and Associated Gain versus Frequency
Figure 12. Minimum Noise Figure and Associated Gain versus Collector Current
0.6
1.8
1.6
1.4
1.2
1.0
0.8
G
NF
, ASSOCIATED GAIN (dB)
2.0
26
NFmin
GNF
VCE = 2.0
VIC = 5.0 mA
f, FREQUENCY (GHz)
22
18
14
10
6.0
NF
min
, MINIMUM NOISE FIGURE (dB)
4.00.5 1.0 1.5 2.0 2.5 3.0 3.5
2.0
28
26
22
18
14
10
6.0
24
20
16
12
8.0
4.0
4.00.5 0.6
1.8
f, FREQUENCY (GHz)
1.6
1.4
1.2
1.0
0.8
1.0 1.5 2.0 2.5 3.0 3.5
NFmin
GNF
VCE = 3.0
VIC = 3.0 mA
G
NF
, ASSOCIATED GAIN (dB)
NF
min
, MINIMUM NOISE FIGURE (dB)
0.6
1.8
1.6
1.4
1.2
1.0
0.8
0
24
20
16
12
8.0
4.0
GNF 900 MHz
VCE = 2.0 V
IC, COLLECTOR CURRENT (mA)
GNF 1.9 GHz
NFmin 900 MHz
NFmin 1.9 GHz
G
NF
, ASSOCIATED GAIN (dB)
NF
min
, MINIMUM NOISE FIGURE (dB)
200 2.0 4.0 6.0 8.0 10 12 14 16 18
Typical Performance Characteristics
MBC13900 Technical Data, Rev. 1.1
8Freescale Semiconductor
Figure 13. Minimum Noise Figure and Associated Gain versus Collector Current
Figure 14. Output Third Order Intercept versus Collector Current
Figure 15. Output Third Order Intercept versus Collector Current
2.0
26
0.6
1.8
IC, COLLECTOR CURRENT (mA)
22 1.6
18 1.4
14 1.2
10 1.0
6.0 0.8
G
NF
, ASSOCIATED GAIN (dB)
NF
min
, MINIMUM NOISE FIGURE (dB)
VCE = 3.0 V
GNF 900 MHz
GNF 1.9 GHz
NFmin 900 MHz
NFmin 1.9 GHz
200 2.0 4.0 6.0 8.0 10 12 14 16 18
0
26
24
22
20
18
16
14
12
10
8.0
6.0
4.0
2.0
2.0 V
f = 900 MHz
IC, COLLECTOR CURRENT (mA)
OIP3, OUTPUT INTERCEPT POINT (dBm)
3.0 V
200 2.0 4.0 6.0 8.0 10 12 14 16 18
4.0
26
24
22
20
18
16
14
12
10
8.0
6.0
OIP3, OUTPUT INTERCEPT POINT (dBm)
IC, COLLECTOR CURRENT (mA)
2.0 V
f = 1.9 GHz
3.0 V
200 2.0 4.0 6.0 8.0 10 12 14 16 18
Applications Information
MBC13900 Technical Data, Rev. 1.1
Freescale Semiconductor 9
Figure 16. One dB Compression Point versus Collector Current
Figure 17. One dB Compression Point versus Collector Current
5 Applications Information
A flexible applications board topology has been developed to demonstrate the performance of the
MBC13900 at 900 and 1900 MHz. The designs are a compromise of the competing performance
requirements of gain, noise figure, input third-order intercept point (IIP3) and return losses. PCB, samples
and assembly information is available from Freescale under part number KITMBC13900.
5.1 900 MHz LNA
Figure 18 shows the schematic and Figure 19 shows the component placement for a 900 MHz LNA. The
design goals for the circuit are:
NF < 1.2 dB
Gain > 19 dB
Return Loss > 10 dB, input and output
Unconditional stability from 100 MHz to 6 GHz.
-14
14
10
6.0
2.0
-2.0
-6.0
-10
IC, COLLECTOR CURRENT (mA)
P
1dB
, 1dB COMPRESSION POINT (dBm)
2.0 V
f = 900 MHz
3.0 V
0202.0 4.0 6.0 8.0 10 12 14 16 18
-14
IC, COLLECTOR CURRENT (mA)
P
1dB
, 1dB COMPRESSION POINT (dBm)
14
10
6.0
2.0
-2.0
-6.0
-10
2.0 V
f = 1.9 GHz
3.0 V
0202.0 4.0 6.0 8.0 10 12 14 16 18
Applications Information
MBC13900 Technical Data, Rev. 1.1
10 Freescale Semiconductor
Typical performance that can be expected from this circuit at 3.0 and 3.5 V VCC is listed in Table 5. The
component values can be changed to enhance the performance of a particular parameter but usually at the
expense of another. Gain can be improved by sacrificing stability (R3 and R5). Input return loss can be
sacrificed to improve noise figure. IIP3 can be improved by increasing emitter degeneration (L3) and bias
current (R2). Unused traces are available on the PCB to add emitter degeneration at leads 1 and 3 of the
device.
Figure 18. 900 MHz LNA Schematic
Figure 19. 900 MHz LNA Board Layout
Table 5. Typical 900 MHz LNA Performance
VCC
IC
(mA)
NF
(dB)
50 Ω Insertion
Gain (dB)
Output IP3
(dBm)
Input Return
Loss (dB)
Output Return
Loss (dB)
3.0 5.0 1.2 19.7 15 10.1 10.2
3.5 6.1 1.21 20.2 17.6 10.8 10.8
C3
L1
R4
R3 C2
C4
VCC
C1
R1
R2
RF In
RF Out
R5
L2
L4
C
7
Gnd
VCC
C1
R1
C4
R5
L2
C2
R3
C5
R2
R4
L1
C6
C3R6
Component Value Comments
C1 1.0 µF Optional Bypassing
C2 3.3 pF DC Block and S22
C3 12 pF DC Block and S11
C4 0.01 µF Broadband bypass
C5 1.0 µF Broadband bypass
C6 0.3 pF IIP3 improvement
L1 6.8 nH Toko LL1608-FS, match, bias
L2 5.6 nH Toko LL1608-FH, match, bias
L3 <0.5 nH Emitter L on board (distance to GND vias)
R1 133 ΩBias
R2 49.9 kΩBias
R3 16.5 ΩStability, S22
R4 0 ΩJumper
R5 3.9 ΩStability, S22
R6 0 ΩJumper
Vias D = 15 mil
PCB FR4 εr=4.5, h=25 mil, t=1.75 mil
Applications Information
MBC13900 Technical Data, Rev. 1.1
Freescale Semiconductor 11
5.2 1900 MHz LNA
Figure 20 shows the schematic and Figure 21 shows the component placement for a 1900 MHz LNA. The
design goals for the circuit are:
NF < 1.35 dB
Gain > 14 dB
Return Loss > 10 dB, input and output
Unconditional stability from 100 MHz to 6 GHz.
Typical performance that can be expected from this circuit at 3.0 V VCC and 5.0 mA is listed in Table 6.
The component values can be changed to enhance the performance of a particular parameter but usually
at the expense of another. Gain can be improved by sacrificing stability (R3 and R5). Input return loss can
be sacrificed to improve noise figure. Input return loss can be improved at the expense of noise figure (C3,
C7, L4). IIP3 can be improved by increasing emitter degeneration (L3) and bias current (R2). Unused
traces are available on the PCB to add emitter degeneration at leads 1 and 3 of the device.
Figure 20. 1900 MHz LNA Schematic
C3
L1
R4
R3 C2
C4
VCC
C1
R1
R2
RF In
RF Out
R5
L2
L4
C7
Applications Information
MBC13900 Technical Data, Rev. 1.1
12 Freescale Semiconductor
Figure 21. 1900 MHz LNA Board Layout
Table 6. Typical 1900 MHz LNA Performance
VCC
IC
(mA)
NF
(dB)
50 Ω Insertion
Gain (dB)
Output IP3
(dBm)
Input Return
Loss (dB)
Output Return
Loss (dB)
3.0 5.0 1.28 14 19 10.4 10.7
3.5 6.1 1.29 14.4 20.2 10.8 11
Gnd
VCC
C1
R1
C4
R5
L2
C2
R3
C5
R2
R4
L1
C6
C3R6
Component Value Comments
C1 1.0 µF Optional Bypassing
C2 22 pF DC Block and output match
C3 22 pF DC Block and input match
C4 0.01 µF RF and IM subharmonic short to ground
C5 1.0 µF RF and IM subharmonic short to ground
C7 0.6 pF Input match, RF / S11 compromise
L1 8.2 nH Bias decoupling, input match
L2 3.3 nH Output match, bias decoupling
L3 <0.5 nH Emitter L on board (distance to GND vias)
L4 1.2 nH S11
R1 133 ΩBias
R2 49.9 kΩBias
R3 8.2 ΩStability and S22 improvement
R4 0 ΩJumper
R5 4.7 ΩStability, Gain, S22
Vias D = 15 mil
PCB FR4 εr=4.5, h=25 mil, t=1.75 mil
Applications Information
MBC13900 Technical Data, Rev. 1.1
Freescale Semiconductor 13
Table 7. Common Emitter S-Parameters
VCE
(Vdc)
IC
(mA)
f
(GHz)
S11 S21 S12 S22
|S11|∠ φ|S21|∠ φ|S12|∠ φ|S22|∠ φ
2.0 1.0 0.1 0.973 -6 3.754 175 0.008 86 0.997 -3
0.5 0.961 -33 3.366 153 0.038 71 0.968 -12
0.9 0.895 -57 3.341 135 0.065 56 0.910 -22
1.0 0.868 -63 3.256 131 0.070 53 0.915 -24
1.5 0.766 -91 2.688 111 0.091 38 0.851 -33
1.9 0.721 -114 2.610 94 0.100 26 0.788 -39
2.0 0.706 -119 2.501 91 0.102 23 0.780 -41
2.4 0.649 -140 2.280 77 0.104 15 0.731 -47
3.0 0.628 -166 1.984 58 0.105 2 0.667 -56
3.5 0.606 173 1.717 45 0.099 -3 0.650 -62
4.0 0.606 155 1.478 33 0.094 -10 0.640 -68
4.5 0.611 138 1.421 21 0.089 -12 0.604 -74
5.0 0.610 122 1.309 9 0.085 -11 0.581 -81
2.0 0.1 0.948 -8 7.181 173 0.008 86 0.993 -4
0.5 0.907 -41 6.508 146 0.037 67 0.937 -15
0.9 0.796 -70 5.770 126 0.059 52 0.843 -27
1.0 0.763 -77 5.533 121 0.062 49 0.842 -29
1.5 0.638 -107 4.304 101 0.076 36 0.753 -37
1.9 0.585 -131 3.904 86 0.082 27 0.675 -42
2.0 0.571 -136 3.716 83 0.083 25 0.667 -44
2.4 0.532 -156 3.272 70 0.085 20 0.616 -48
3.0 0.520 179 2.745 53 0.087 13 0.554 -57
3.5 0.511 159 2.360 41 0.088 10 0.542 -62
4.0 0.518 143 2.046 30 0.088 7 0.530 -67
4.5 0.529 128 1.907 19 0.091 5 0.500 -72
5.0 0.536 114 1.747 8 0.096 5 0.474 -78
3.0 0.1 0.926 -10 10.121 172 0.008 84 0.990 -4
0.5 0.853 -48 8.944 141 0.035 65 0.906 -18
0.9 0.716 -80 7.393 120 0.053 49 0.786 -30
1.0 0.680 -87 7.000 115 0.056 47 0.780 -31
1.5 0.556 -118 5.248 95 0.068 36 0.685 -38
Applications Information
MBC13900 Technical Data, Rev. 1.1
14 Freescale Semiconductor
1.9 0.507 -141 4.579 81 0.073 31 0.609 -43
2.0 0.497 -147 4.359 78 0.074 29 0.601 -44
2.4 0.472 -166 3.778 66 0.077 25 0.554 -48
3.0 0.468 170 3.120 51 0.082 21 0.495 -56
3.5 0.466 152 2.680 39 0.086 18 0.485 -61
4.0 0.476 137 2.333 28 0.091 15 0.476 -66
4.5 0.491 123 2.148 18 0.096 12 0.447 -70
5.0 0.503 109 1.963 8 0.104 11 0.423 -75
5.0 0.1 0.884 -13 15.377 170 0.007 83 0.982 -6
0.5 0.753 -59 12.586 134 0.032 61 0.846 -22
0.9 0.595 -94 9.434 111 0.046 49 0.699 -33
1.0 0.561 -102 8.786 106 0.048 47 0.689 -34
1.5 0.457 -134 6.309 88 0.058 39 0.596 -39
1.9 0.421 -156 5.291 75 0.064 36 0.531 -42
2.0 0.416 -161 5.033 72 0.065 36 0.525 -43
2.4 0.408 -178 4.295 62 0.072 34 0.485 -47
3.0 0.418 160 3.505 48 0.080 30 0.435 -54
3.5 0.424 143 3.012 37 0.088 26 0.426 -58
4.0 0.437 129 2.633 27 0.095 23 0.415 -63
4.5 0.454 116 2.394 17 0.104 19 0.393 -67
5.0 0.471 104 2.181 7 0.114 15 0.368 -72
10 0.1 0.785 -19 25.691 165 0.007 78 0.961 -8
0.5 0.575 -79 17.485 122 0.027 59 0.750 -28
0.9 0.438 -118 11.534 99 0.037 51 0.595 -35
1.0 0.421 -126 10.545 95 0.038 51 0.567 -35
1.5 0.366 -156 7.311 80 0.050 48 0.500 -38
1.9 0.356 -176 5.901 69 0.058 46 0.454 -39
2.0 0.354 -180 5.625 67 0.060 46 0.449 -40
2.4 0.362 166 4.737 57 0.069 44 0.417 -43
3.0 0.392 148 3.842 45 0.082 38 0.372 -49
3.5 0.399 134 3.307 35 0.092 34 0.357 -54
Table 7. Common Emitter S-Parameters (continued)
VCE
(Vdc)
IC
(mA)
f
(GHz)
S11 S21 S12 S22
|S11|∠ φ|S21|∠ φ|S12|∠ φ|S22|∠ φ
Applications Information
MBC13900 Technical Data, Rev. 1.1
Freescale Semiconductor 15
4.0 0.414 120 2.907 25 0.103 29 0.345 -59
4.5 0.434 109 2.613 16 0.113 25 0.328 -65
5.0 0.453 98 2.374 6 0.124 18 0.307 -69
15 0.1 0.708 -25 32.559 161 0.007 83 0.938 -10
0.5 0.480 -94 19.200 115 0.024 58 0.679 -29
0.9 0.381 -133 11.991 94 0.033 54 0.538 -34
1.0 0.371 -141 10.889 90 0.035 54 0.515 -33
1.5 0.344 -169 7.466 76 0.047 53 0.460 -36
1.9 0.345 174 5.959 66 0.056 51 0.424 -37
2.0 0.345 170 5.683 64 0.059 50 0.420 -38
2.4 0.358 157 4.765 55 0.069 47 0.392 -41
3.0 0.392 142 3.852 43 0.084 42 0.349 -47
3.5 0.403 129 3.324 33 0.095 37 0.336 -52
4.0 0.418 116 2.924 24 0.105 31 0.323 -57
4.5 0.438 106 2.618 14 0.117 26 0.307 -63
5.0 0.460 95 2.375 5 0.128 20 0.288 -67
20 0.1 0.639 -31 37.220 158 0.007 75 0.919 -12
0.5 0.430 -107 19.608 110 0.022 58 0.629 -30
0.9 0.365 -146 11.885 91 0.032 58 0.504 -32
1.0 0.360 -153 10.741 87 0.034 58 0.483 -32
1.5 0.350 -178 7.337 73 0.047 55 0.438 -34
1.9 0.357 167 5.815 64 0.056 54 0.408 -35
2.0 0.357 164 5.555 62 0.060 52 0.403 -36
2.4 0.371 152 4.641 53 0.069 49 0.378 -39
3.0 0.408 138 3.746 42 0.084 44 0.338 -45
3.5 0.419 126 3.239 32 0.096 39 0.323 -51
4.0 0.435 113 2.849 23 0.109 32 0.312 -56
4.5 0.453 104 2.545 13 0.119 27 0.295 -61
5.0 0.475 94 2.306 4 0.131 20 0.276 -66
3.0 1.0 0.1 0.970 -7 3.745 175 0.007 86 0.999 -3
0.5 0.949 -31 3.341 154 0.034 73 0.989 -12
Table 7. Common Emitter S-Parameters (continued)
VCE
(Vdc)
IC
(mA)
f
(GHz)
S11 S21 S12 S22
|S11|∠ φ|S21|∠ φ|S12|∠ φ|S22|∠ φ
Applications Information
MBC13900 Technical Data, Rev. 1.1
16 Freescale Semiconductor
0.9 0.892 -55 3.339 136 0.059 59 0.939 -21
1.0 0.878 -61 3.275 132 0.065 54 0.919 -23
1.5 0.778 -89 2.724 112 0.084 39 0.869 -31
1.9 0.730 -111 2.648 96 0.093 28 0.808 -37
2.0 0.714 -116 2.543 93 0.095 26 0.801 -39
2.4 0.652 -137 2.326 80 0.098 17 0.755 -44
3.0 0.634 -164 2.040 61 0.098 5 0.689 -53
3.5 0.604 175 1.765 48 0.093 -1 0.670 -60
4.0 0.599 157 1.521 35 0.091 -8 0.660 -66
4.5 0.604 140 1.466 23 0.084 -10 0.626 -73
5.0 0.602 124 1.348 12 0.080 -9 0.606 -79
2.0 0.1 0.951 -8 6.981 173 0.007 88 0.992 -3
0.5 0.913 -39 6.335 147 0.033 69 0.944 -14
0.9 0.807 -67 5.710 128 0.054 54 0.859 -25
1.0 0.774 -74 5.488 123 0.057 51 0.860 -27
1.5 0.647 -104 4.306 103 0.071 37 0.777 -35
1.9 0.591 -127 3.935 87 0.077 28 0.704 -40
2.0 0.576 -132 3.750 85 0.077 26 0.697 -42
2.4 0.531 -152 3.316 72 0.080 22 0.647 -47
3.0 0.516 -178 2.790 55 0.082 14 0.584 -55
3.5 0.505 162 2.402 43 0.081 12 0.574 -60
4.0 0.508 146 2.078 32 0.083 8 0.563 -65
4.5 0.521 130 1.943 21 0.084 7 0.535 -70
5.0 0.526 115 1.782 10 0.089 7 0.511 -76
3.0 0.1 0.928 -9 10.077 172 0.007 84 0.991 -4
0.5 0.859 -46 8.948 142 0.032 66 0.917 -17
0.9 0.725 -77 7.487 121 0.049 51 0.806 -28
1.0 0.687 -84 7.105 116 0.052 50 0.803 -30
1.5 0.559 -115 5.356 97 0.063 38 0.711 -37
1.9 0.505 -138 4.701 82 0.067 31 0.638 -41
2.0 0.493 -143 4.473 79 0.068 31 0.631 -42
Table 7. Common Emitter S-Parameters (continued)
VCE
(Vdc)
IC
(mA)
f
(GHz)
S11 S21 S12 S22
|S11|∠ φ|S21|∠ φ|S12|∠ φ|S22|∠ φ
Applications Information
MBC13900 Technical Data, Rev. 1.1
Freescale Semiconductor 17
2.4 0.462 -162 3.886 68 0.072 27 0.585 -47
3.0 0.458 173 3.218 52 0.077 22 0.529 -54
3.5 0.452 154 2.763 41 0.082 20 0.518 -59
4.0 0.460 139 2.403 30 0.085 17 0.509 -64
4.5 0.476 125 2.216 20 0.090 14 0.483 -69
5.0 0.486 110 2.025 10 0.098 13 0.460 -74
5.0 0.1 0.884 -12 15.441 170 0.007 82 0.985 -5
0.5 0.756 -55 12.831 135 0.029 64 0.882 -22
0.9 0.598 -90 9.722 112 0.042 50 0.743 -31
1.0 0.570 -98 9.076 107 0.045 48 0.711 -32
1.5 0.458 -129 6.576 89 0.054 42 0.629 -38
1.9 0.415 -152 5.514 76 0.060 38 0.564 -40
2.0 0.408 -157 5.251 74 0.061 37 0.557 -41
2.4 0.395 -174 4.489 63 0.067 35 0.517 -45
3.0 0.407 163 3.680 49 0.076 31 0.464 -51
3.5 0.407 146 3.158 39 0.083 28 0.450 -56
4.0 0.417 131 2.768 29 0.090 25 0.438 -61
4.5 0.434 118 2.517 19 0.098 21 0.419 -67
5.0 0.450 105 2.294 9 0.108 17 0.398 -72
10 0.1 0.795 -18 25.574 165 0.007 79 0.970 -7
0.5 0.587 -74 17.871 123 0.025 60 0.780 -26
0.9 0.438 -112 11.957 101 0.034 54 0.631 -33
1.0 0.417 -119 10.950 97 0.036 52 0.602 -33
1.5 0.351 -150 7.620 81 0.047 50 0.536 -37
1.9 0.334 -171 6.171 70 0.054 47 0.490 -38
2.0 0.332 -175 5.878 68 0.056 47 0.485 -39
2.4 0.336 169 4.960 59 0.065 45 0.454 -42
3.0 0.363 151 4.029 46 0.076 40 0.408 -48
3.5 0.371 136 3.465 36 0.087 36 0.393 -53
4.0 0.385 122 3.048 27 0.097 31 0.383 -58
4.5 0.405 110 2.743 17 0.107 26 0.368 -63
Table 7. Common Emitter S-Parameters (continued)
VCE
(Vdc)
IC
(mA)
f
(GHz)
S11 S21 S12 S22
|S11|∠ φ|S21|∠ φ|S12|∠ φ|S22|∠ φ
Applications Information
MBC13900 Technical Data, Rev. 1.1
18 Freescale Semiconductor
5.0 0.425 99 2.493 8 0.117 20 0.348 -68
15 0.1 0.723 -22 32.706 163 0.006 79 0.949 -9
0.5 0.487 -88 19.861 116 0.021 60 0.695 -26
0.9 0.373 -127 12.612 96 0.031 55 0.556 -32
1.0 0.355 -134 11.492 92 0.033 55 0.555 -32
1.5 0.317 -164 7.867 77 0.044 53 0.494 -34
1.9 0.312 177 6.309 67 0.053 52 0.460 -37
2.0 0.315 173 6.004 65 0.055 51 0.454 -37
2.4 0.327 159 5.044 56 0.064 48 0.429 -41
3.0 0.354 142 4.069 44 0.078 43 0.390 -47
3.5 0.371 128 3.507 35 0.089 38 0.384 -52
4.0 0.383 116 3.073 25 0.099 33 0.376 -57
4.5 0.400 105 2.757 16 0.109 27 0.361 -61
5.0 0.427 95 2.500 7 0.120 21 0.341 -65
20 0.1 0.660 -27 37.408 160 0.006 79 0.933 -10
0.5 0.430 -98 20.678 112 0.021 60 0.672 -27
0.9 0.343 -137 12.691 93 0.030 59 0.548 -31
1.0 0.335 -144 11.493 89 0.032 59 0.526 -31
1.5 0.313 -172 7.854 75 0.044 57 0.479 -33
1.9 0.317 171 6.249 66 0.052 55 0.450 -34
2.0 0.318 168 5.963 64 0.055 54 0.446 -35
2.4 0.332 155 4.996 55 0.065 51 0.421 -38
3.0 0.365 140 4.042 43 0.080 45 0.381 -44
3.5 0.379 127 3.486 34 0.090 40 0.366 -50
4.0 0.393 115 3.068 25 0.102 34 0.356 -55
4.5 0.411 105 2.747 16 0.112 29 0.342 -61
5.0 0.434 94 2.492 6 0.123 23 0.324 -66
Table 7. Common Emitter S-Parameters (continued)
VCE
(Vdc)
IC
(mA)
f
(GHz)
S11 S21 S12 S22
|S11|∠ φ|S21|∠ φ|S12|∠ φ|S22|∠ φ
Applications Information
MBC13900 Technical Data, Rev. 1.1
Freescale Semiconductor 19
Table 8. Common Emitter Noise Parameters
VCE
(V)
IC
(mA)
Freq
(GHz)
NFmin
(dB)
Gamma Opt Rn
Ω
rn
Ω
GNF
(dB) K
Mag Ang
2.0 5.0 0.5 0.76 0.26 3 9.0 0.18 25.27 0.29
0.7 0.76 0.25 14 8.5 0.17 23.60 0.37
0.9 0.77 0.24 25 8.5 0.17 22.03 0.48
1.0 0.77 0.24 31 8.0 0.16 21.29 0.51
1.5 0.82 0.23 60 7.0 0.14 17.94 0.74
1.9 0.90 0.22 85 6.5 0.13 15.73 0.90
2.0 0.92 0.22 91 6.5 0.13 15.24 0.93
2.4 1.03 0.22 116 5.5 0.11 13.54 1.03
3.0 1.24 0.23 155 5.0 0.10 11.75 1.17
3.5 1.47 0.25 -172 5.0 0.10 10.96 1.23
4.0 1.74 0.27 137 6.5 0.13 10.81 1.29
3.0 3.0 0.5 0.76 0.38 8 12.0 0.24 24.32 0.22
0.7 0.76 0.37 17 11.5 0.23 22.70 0.28
0.9 0.76 0.37 26 11.0 0.22 21.19 0.36
1.0 0.77 0.36 31 11.0 0.22 20.47 0.38
1.5 0.82 0.35 56 9.5 0.19 17.24 0.59
1.9 0.91 0.34 77 8.5 0.17 15.10 0.76
2.0 0.94 0.34 83 8.0 0.16 14.63 0.79
2.4 1.06 0.33 105 6.5 0.13 12.98 0.94
3.0 1.32 0.31 141 5.0 0.10 11.27 1.12
3.5 1.59 0.30 173 4.5 0.09 10.52 1.24
4.0 1.92 0.29 -153 6.5 0.13 10.39 1.34
Table 9. SPICE Parameters (MBC13900 Die Parameters)
NameValueNameValueNameValue
IS 2.77E-16 IRB 0.006 TF 6.34E-12
BF 181.6 RBM 0.047 XTF 3.051
NF 1.012 RE 4.431 VTF 1.336
VAF 40.66 RC 5.845 ITF 0.202
IKF 0.237 XTB 0.6 PTF 0
ISE 3.79E-14 EG 1.195 TR 1.02E-09
NE 2.00 XTI 0.8 FC 0.95
Applications Information
MBC13900 Technical Data, Rev. 1.1
20 Freescale Semiconductor
Figure 22. Simplified Package Model
Figure 23. Constant Gain and Noise Figure Contours
(f = 900 MHz)
BR 4.547 CJE 4.52E-13
NR 1.00 VJE 1.95
VAR 2.722 MJE 0.58
IKR 9.98E-04 CJC 1.56E-13
ISC 3.78E-15 VJC 0.424
NC 2.00 MJC 0.232
RB 9.055 XCJC 0.187
Table 9. SPICE Parameters (MBC13900 Die Parameters) (continued)
NameValueNameValueNameValue
7.0 fF
0.5 nH 0.6 nH
140 fF140 fF
0.1 nH
0.6 nH 0.5 nH BC
E
B
C
E
0.25 nH
f (GHz) NF Opt (dB) Rn K
0.9 0.77 8.5 0.48
ΓO
0.24 ∠ 25.2°
VCE = 2.0 V
IC = 5.0 mA
---Potentially Unstable
0.2 0.5 1.0 2.0
j1.0
j2.0j0.5
j0.2
- j0.2
- j0.5
- j1.0
- j2.0
I
NPUT
OUTPUT
23 dB
22
20
21 1.0 dB
1.5
2.0
3.0
4.0
NF Opt = 0.77 dB
Applications Information
MBC13900 Technical Data, Rev. 1.1
Freescale Semiconductor 21
Figure 24. Constant Gain and Noise Figure Contours
(f = 1.9 GHz)
Figure 25. Constant Gain and Noise Figure Contours
(f = 900 MHz)
f (GHz) NF Opt (dB) Rn K
1.9 0.9 6.5 0.90
ΓO
0.22 ∠ 84.5°
VCE = 2.0 V
IC = 5.0 mA
---Potentially Unstable
0.2 0.5 1.0 2.0
j1.0
j2.0j0.5
j0.2
- j0.2
- j0.5
- j1.0
- j2.0
17
16
INPUT
18
19 dB
OUTPUT
3.0
4.0
2.0 dB
1.0 dB
NF Opt = 0.90 dB
1.5 dB
f (GHz) NF Opt (dB) Rn K
0.9 0.76 11 0.36
ΓO
0.37 ∠ 26.3°
VCE = 3.0 V
IC = 3.0 mA
---Potentially Unstable
0.2 0.5 1.0 2.0
j1.0
j2.0j0.5
j0.2
- j0.2
- j0.5
- j1.0
- j2.0
I
NPUT
OUTPUT
4.0
3.0
2.0
1.5
1.0 dB
21 dB
20
18
19
NF Opt = 0.76 dB
Applications Information
MBC13900 Technical Data, Rev. 1.1
22 Freescale Semiconductor
Figure 26. Constant Gain and Noise Figure Contours
(f = 1.9 GHz)
f (GHz) NF Opt (dB) Rn K
1.9 0.91 8.5 0.76
ΓO
0.34 ∠ 77.2°
VCE = 3.0 V
IC = 3.0 mA
---Potentially Unstable
0.2 0.5 1.0 2.0
j1.0
j2.0j0.5
j0.2
- j0.2
- j0.5
- j1.0
- j2.0
INPUT
3.0
4.0
1.0 dB
OUTPUT
18 dB
17
15
16
1.5
2.0
NF Opt = 0.91 dB
Packaging
MBC13900 Technical Data, Rev. 1.1
Freescale Semiconductor 23
6 Packaging
Figure 27. Outline Dimensions for SOT-343
(Case 318M-01, Issue 0)
7 Product Documentation
This data sheet is labeled as a particular type: Product Preview, Advance Information, or Technical Data.
Definitions of these types are available at: http://www.freescale.com on the documentation page.
Table 10 summarizes revisions to this document since the previous release (Rev. 1).
Table 10. Revision History
Location Revision
Ta b l e 1 Orderable Parts Details Updated
L2
θ
4X 1
θ
4X 1
θ
(L1)
C
SEATING PLANE
GAUGE PLANE
L
VIEW C
A-B
M
0.10 DC
A
0.15 C
0.20 C
E1/2
E/2
E1 3X b
ED
D
2X
B
PIN 1 IDENTIFIER
IN THIS ZONE
2X
1
3
4
2
e2
e1
e4
B (B1)
e3
0.15 C
2X
0.10 C
A2
A1
A
4X
SEATING PLANE
b1
c1
b
c
SECTION B-B
(SEE NOTE 7)
BASE METAL
WITH PLATING
VIEW C
B
BDIM MIN MAX
MILLIMETERS
A--- 1.10
A1 0.00 0.10
A2 0.80 1.00
b0.25 0.40
b1 0.25 0.35
B0.55 0.70
B1 0.55 0.65
c0.10 0.25
c1 0.08 0.20
D2.00 BSC
E2.10 BSC
E1 1.25 BSC
e1 1.30 BSC
e2 0.65 BSC
e3 1.15 BSC
e4 0.50 BSC
L0.26 0.46
L1 0.425 REF
L2 0.15 BSC
θ0˚ 8˚
4˚ 10˚θ1
NOTES:
1.
2.
3.
4.
5.
6.
7.
DIMENSIONS ARE IN MILLIMETERS.
INTERPRET DIMENSIONS AND TOLERANCES PER ASME
Y14.5M, 1994.
DIMENSION D DOES NOT INCLUDE MOLD FLASH,
PROTRUSIONS OR GATE BURRS. MOLD FLASH,
PROTRUSIONS OR GATE BURRS SHALL NOT
EXCEED 0.15mm PER END. DIMENSION E1 DOES
NOT INCLUDE INTERLEAD FLASH OR
PROTRUSION. INTERLEAD FLASH OR PROTRUSION
SHALL NOT EXCEED 0.15mm PER SIDE.
DIMENSIONS D AND E1 ARE DETERMINED AT THE
OUTMOST EXTREMES OF THE PLASTIC BODY
EXCLUSIVE OF MOLD FLASH, TIE BAR BURRS,
GATE BURRS AND INTERLEAD FLASH, BUT
INCLUDING ANY MISMATCH BETWEEN THE TOP
AND BOTTOM OF PLASTIC BODY.
DATUMS A, B AND D TO BE DETERMINED 0.10mm
FROM THE LEAD TIP.
TERMINAL NUMBERS ARE SHOWN FOR
REFERENCE ONLY.
THESE DIMENSIONS APPLY TO THE FLAT SECTION
OF THE LEAD BETWEEN 0.08mm AND 0.15mm FROM
THE LEAD TIP.
Document Number: MBC13900/D
Rev. 1.1
06/2005
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