CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright © Harris Corporation 1995 4-15
SEMICONDUCTOR
December 1995
IRFR9220,
IRFU9220
3.6A, 200V, Avalanche Rated, P-Channel
Enhancement-Mode Power MOSFETs
Packages
JEDEC TO-251AA
JEDEC TO-252AA
Symbol
GATE
SOURCE
DRAIN
DRAIN (FLANGE)
DRAIN (FLANGE)
GATE
SOURCE
G
D
S
Features
• 3.6A, 200V
•r
DS(ON) = 1.500Ω
•
Temperature Compensating
PSPICE Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
Description
The IRFU9220 and IRFR9220 are advanced power MOS-
FETs designed, tested, and guaranteed to withstand a spe-
cific level of energy in the avalanche breakdown mode of
operation. These are P-Channel enhancement-mode silicon
gate power field-effect transistors designed for applications
such as switching regulators, switching converters, motor
drivers, relay drivers, and drivers for high-power bipolar
switching transistors requiring high speed and low gate-drive
power. These types can be operated directly from integrated
circuits.
Formerly developmental type TA17502.
PACKAGE AVAILABILITY
PART NUMBER PACKAGE BRAND
IRFU9220 TO-251AA IF9220
IRFR9220 TO-252AA IF9220
NOTE: When ordering use the entire part number . Add the suf fix 9A
to obtain the TO-252AA variant in tape and reel, e.g., IRFR92209A.
Absolute Maximum Ratings TC = +25oC
IRFU9220, IRFR9220 UNITS
Drain Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS -200 V
Drain Gate Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDGR -200 V
Gate Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS ±20 V
Drain Current
RMS Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
3.6
Refer to Peak Current Curve A
Single Pulse Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS Refer to UIS Curve
Power Dissipation
TC = +25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Derate above +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42
0.33 W
W/oC
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TSTG, TJ-55 to +150 oC
Soldering Temperature of Leads for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL260 oC
File Number 4015.1
4-16
Specifications IRFR9220, IRFU9220
Electrical Specifications TC = +25oC, Unless Otherwise Specified
PARAMETERS SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Drain-Source Breakdown
Voltage BVDSS ID = 250µA, VGS = 0V -200 - - V
Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 250µA -2.0 - -4.0 V
Zero Gate Voltage Drain Current IDSS VDS = -200V,
VGS = 0V TC = +25oC---1µA
T
C
= +150oC - - -50 µA
Gate-Source Leakage Current IGSS VGS = ±20V - - 100 nA
On Resistance rDS(ON) ID = 2.2A, VGS = -10V - - 1.500 Ω
Turn-On Time tON VDD = -100V, ID = 3.9A
RL = 24Ω, VGS = -10V
RGS = 18Ω
- - 50 ns
Turn-On Delay Time tD(ON) - 8.8 - ns
Rise Time tR-27- ns
Turn-Off Delay Time tD(OFF) - 7.3 - ns
Fall Time tF-19- ns
Turn-Off Time tOFF - - 50 ns
Total Gate Charge QGVGS = 0 to -10V VDD = -160V,
ID = 3.9A,
RL = 41Ω
-20- nC
Gate-to-Drain Charge QGD -11- nC
Gate-to-Source Charge QGS - 3.3 - nC
Input Capacitance CISS VDS = -25V, VGS = 0V
f = 1MHz - 550 - pF
Output Capacitance COSS - 110 - pF
Reverse Transfer Capacitance CRSS -33- pF
Thermal Resistance
Junction to Case RθJC - - 3.00 oC/W
Thermal Resistance
Junction to Ambient RθJA - - 100 oC/W
Source-Drain Diode Specifications
PARAMETERS SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Forward Voltage VSD ISD = -3.6A - - -6.3 V
Reverse Recovery Time tRR ISD = -3.6A, dISD/dt = -100A/µs - 150 300 ns
Reverse Recovery Charge QRR 0.97 2.0 µC
4-17
IRFR9220, IRFU9220
Typical Performance Curves
FIGURE 1. SAFE OPERATING AREA CURVE FIGURE 2. MAXIMUM TRANSIENT THERMAL IMPEDANCE
FIGURE 3. MAXIMUM CONTINUOUS DRAIN CURRENT vs
TEMPERATURE FIGURE 4. PEAK CURRENT CAPABILITY
FIGURE 5. TYPICAL SATURATION CHARACTERISTICS FIGURE 6. TYPICAL TRANSFER CHARACTERISTICS
-20
-10
-1
-0.1-1 -10 -100
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
TC = +25oC
ID, DRAIN CURRENT (A)
OPERATION IN THIS
AREA MAY BE
LIMITED BY rDS(ON)
100µs
10ms
100ms
DC
VDSS MAX = -200V
1ms
-500 t, RECTANGULAR PULSE DURATION (s)
10-5 10-3 10-2 10-1 100101
10-4
0.01
10
0.1
1
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ= PDM x ZθJC + TC
PDM
t1t2
SINGLE PULSE
.01
.02
.05
0.1
0.2
0.5
ZθJC, THERMAL RESPONSE (oC/W)
-2
-4
-1
025 50 75 100 125 150
ID, DRAIN CURRENT (A)
TC, CASE TEMPERATURE (oC)
-3
10-5 10-4 10-3 10-2 10-1 100101
-10
-50
t, PULSE WIDTH (s)
TC = +25oC
IDM, PEAK CURRENT CAPABILITY (A)
VGS = -20V
VGS = -10V
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
FOR TEMPERATURES ABOVE +25oC
DERATE PEAK CURRENT
CAPABILITY AS FOLLOWS:
-1
II
25 150 TC
–
125
-----------------------



=
0
0.0 -1.5 -3.0 -4.5 -6.0 -7.5
ID, DRAIN CURRENT (A)
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
PULSE DURATION = 250µs, TC = +25oC
VGS = -5V
VGS = -6V
VGS = -8V
VGS = -7V
VGS = -10V
-1
-2
-3
-4
VGS = -4.5V
VGS = -20V
-5
0.0 -1.0 -2.0 -3.0 -4.0 -5.0
VGS, GATE-TO-SOURCE VOLTAGE (V)
ID(ON), ON STATE DRAIN CURRENT (A)
0
PULSE TEST
PULSE DURATION = 250µs
DUTY CYCLE = 0.5% MAX
-55oC
VDD = -15V
+150oC
+25oC
-2
-4
-8
-6
-6.0 -7.0
4-18
IRFR9220, IRFU9220
FIGURE 7. NORMALIZED rDS(ON) vs JUNCTION
TEMPERATURE FIGURE 8. NORMALIZED GATE THRESHOLD VOLTAGE vs
TEMPERATURE
FIGURE 9. NORMALIZED DRAIN SOURCE BREAKDOWN
VOLTAGE vs TEMPERATURE FIGURE 10. NORMALIZED POWER DISSIPATION vs TEMPERA-
TURE DERATING CURVE
FIGURE 11. TYPICAL CAPACITANCE vs VOLTAGE FIGURE 12. NORMALIZED SWITCHING WAVEFORMS FOR
CONSTANT GATE CURRENT. REFER TO
APPLICATION NOTES AN7254 AND AN7260
Typical Performance Curves
(Continued)
PULSE DURATION = 250µs, VGS = -10V, ID = -3.9A
2.0
1.5
1.0
0.5
0.0
-80 -40 0 40 80 120 160
TJ, JUNCTION TEMPERATURE (oC)
rDS(ON), NORMALIZED ON RESISTANCE
2.5 VGS = VDS, ID = 250µA
2.0
1.5
1.0
0.5
0.0-80 -40 0 40 80 160120
THRESHOLD VOLTAGE
TJ, JUNCTION TEMPERATURE (oC)
VGS(TH), NORMALIZED GATE
ID = 250µA
2.0
1.5
1.0
0.5
0.0-80 -40 0 40 80 120 160
BVDSS, NORMALIZED DRAIN-TO-SOURCE
BREAKDOWN VOLTAGE
TJ, JUNCTION TEMPERATURE (oC)
1.2
1.0
0.8
0.6
0.4
0.2
0.0 0 25 50 75 100 125 150
POWER DISSIPATION MULTIPLIER
TC, CASE TEMPERATURE (oC)
VGS = 0V, f = 1MHz
400
300
200
100
00 -5 -10 -15 -20 -25
C, CAPACITANCE (pF)
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
600 CISS
COSS
CRSS
500
700 -200
-120
-80
-40
0
-10.0
-6.0
-4.0
-2.0
0.0
20 IG(REF)
IG(ACT) 80 IG(REF)
IG(ACT)
t, TIME (µs)
VDD = BVDSS
RL = 51Ω
IG(REF) = -1.45mA
0.75 BVDSS
0.50 BVDSS
0.25 BVDSS
0.75 BVDSS
0.50 BVDSS
0.25 BVDSS
VDS, DRAIN-SOURCE VOLTAGE (V)
VGS, GATE-SOURCE VOLTAGE (V)
VGS = -10V
-160
VDD = BVDSS
-8.0
4-19
IRFR9220, IRFU9220
FIGURE 13. UNCLAMPED INDUCTIVE SWITCHING
Test Circuits and Waveforms
FIGURE 14. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 15. UNCLAMPED ENERGY WAVEFORMS
FIGURE 16. RESISTIVE SWITCHING TEST CIRCUIT FIGURE 17. RESISTIVE SWITCHING WAVEFORMS
Typical Performance Curves
(Continued)
-10
-10.01 0.1 1 10
tAV, TIME IN AVALANCHE (ms)
IAS, AVALANCHE CURRENT (A)
STARTING TJ = +150oC
STARTING TJ = +25oC
If R = 0
tAV = (L) (IAS) / (1.3 RATED BVDSS - VDD)
If R ≠ 0
tAV = (L/R) ln [(IAS*R) / (1.3 RATED BVDSS - VDD) + 1]
tP
-VGS 0.01Ω
L
IL
+
-
VDS
VDD
DUT
VARY tP TO OBTAIN
REQUIRED PEAK IAS
0V
RG
VDD
VDS
BVDSS
tP
IAS
tAV
VDD
VDS
-VGS
0V
RGS DUT
RL
tD(ON)
tR
90%
10%
VDS 90%
tF
tD(OFF)
tOFF
90%
50%
50%
10%
PULSE WIDTH
VGS
tON
10%
4-20
Temperature Compensated PSPICE Model for the IRFU9220, IRFR9220
.SUBCKT IRFU9220 2 1 3 REV 9/6/94
CA 12 8 723e-12
CB 15 14 733e-12
CIN 6 8 517e-12
DBODY 5 7 DBDMOD
DBREAK 5 11 DBKMOD
DPLCAP 10 6 DPLCAPMOD
EBREAK 7 11 17 18 -244.4
EDS 14 8 5 8 1
EGS 13 8 6 8 1
ESG 5 10 8 6 1
EVTO 20 6 8 18 1
IT 8 17 1
LDRAIN 2 5 1e-9
LGATE 1 9 2.609e-9
LSOURCE 3 7 2.609e-9
MOS1 16 6 8 8 MOSMOD M=0.99
MOS2 16 21 8 8 MOSMOD M=0.01
RBREAK 17 18 RBKMOD 1
RDRAIN 50 16 RDSMOD 1.194
RGATE 9 20 2.17
RIN 6 8 1e9
RLDRAIN 2 5 10
RLGATE 1 9 26.09
RLSOURCE 3 7 26.09
RSCL1 5 51 RSCLMOD 1e-6
RSCL2 5 50 1e3
RSOURCE 8 7 RDSMOD 90.1e-3
RVTO 18 19 RVTOMOD 1
S1A 6 12 13 8 S1AMOD
S1B 13 12 13 8 S1BMOD
S2A 6 15 14 13 S2AMOD
S2B 13 15 14 13 S2BMOD
VBAT 8 19 DC 1
VTO 21 6 -0.77
ESCL 51 50 VALUE={(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)*1e6/4.6,6))}
.MODEL DBDMOD D (IS=2.56e-14 RS=8.09e-2 TRS1=-2.45e-3 TRS2=-1.33e-5 CJO=4.21e-10 TT=1.17e-7)
.MODEL DBKMOD D (RS=5.07 TRS1=-1.05e-3 TRS2=1.28e-5)
.MODEL DPLCAPMOD D (CJO=170e-12 IS=1e-30 N=10)
.MODEL MOSMOD PMOS (VTO=-3.58 KP=1.38 IS=1e-30 N=10 TOX=1 L=1u W=1u)
.MODEL RBKMOD RES (TC1=1.1e-3 TC2=-2.73e-6)
.MODEL RDSMOD RES (TC1=6.95e-3 TC2=2.23e-5)
.MODEL RSCLMOD RES (TC1=2.40e-3 TC2=-1.5e-5)
.MODEL RVTOMOD RES (TC1=-3.27e-3 TC2=-1.33e-6)
.MODEL S1AMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=5.29 VOFF=3.29)
.MODEL S1BMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=3.29 VOFF=5.29)
.MODEL S2AMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=0.1 VOFF=-4.9)
.MODEL S2BMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-4.9 VOFF=0.1)
.ENDS
NOTE: For further discussion of the PSPICE model, consult A New PSPICE Sub-circuit for the Power MOSFET Featuring Global Tem-
perature Options; written by William J. Hepp and C. Frank Wheatley.
1
GATE
LGATE
DBREAK
DBODY
LDRAIN
DRAIN
RSOURCE
LSOURCE SOURCE
DPLCAP
10
11
73
2
RLGATE
RLDRAIN
RLSOURCE
CA
RBREAK
RVTO
VBAT
+
-
19
IT
EDSEGS
S1A S2A
S2BS1B
CB
1817
12 15
14
13
13
814
13
5
8
+
-
+
-6
8
EVTO
RGATE
209 18
8
+
-
ESG 6
8
+
-
RIN CIN
MOS1
MOS2
VTO
6
5
16
21
8
+
RDRAIN
ESCL
RSCL1RSCL2 51
50
+
-
5
51
EBREAK +
17
18 -
IRFR9220, IRFU9220