MCP14700 Dual Input Synchronous MOSFET Driver Features General Description * Independent PWM Input Control for High-Side and Low-Side Gate Drive * Input Logic Level Threshold 3.0V TTL Compatible * Dual Output MOSFET Drive for Synchronous Applications * High Peak Output Current: 2A (typical) * Internal Bootstrap Blocking Device * +36V BOOT Pin Maximum Rating * Low Supply Current: 45 A (typical) * High Capacitive Load Drive Capability: - 3300 pF in 10.0 ns (typical) * Input Voltage Undervoltage Lockout Protection * Overtemperature Protection * Space Saving Packages: - 8-Lead SOIC - 8-Lead 3x3 DFN The MCP14700 is a high-speed synchronous MOSFET driver designed to optimally drive a high-side and low-side N-Channel MOSFET. The MCP14700 has two PWM inputs to allow independent control of the external N-Channel MOSFETs. Since there is no internal cross conduction protection circuitry the external MOSFET dead time can be tightly controlled allowing for more efficient systems or unique motor control algorithms. Applications * 3-Phase BLDC Motor Control * High Efficient Synchronous DC/DC Buck Converters * High Current Low Output Voltage Synchronous DC/DC Buck Converters * High Input Voltage Synchronous DC/DC Buck Converters * Core Voltage Supplies for Microprocessors The transition thresholds for the PWM inputs are typically 1.6V on a rising PWM input signal and typically 1.2V on a falling PWM input signal. This makes the MCP14700 ideally suited for controllers that utilize 3.0V TTL/CMOS logic. The PWM inputs are internally pulled low ensuring the output drive signals are low if the inputs are floating. The HIGHDR and LOWDR peak source current capability of the MCP14700 device is typically 2A. While the HIGHDR can sink 2A peak typically, the LOWDR can sink 3.5A peak typically. The low resistance pull-up and pull-down drive allow the MCP14700 to quickly transition a 3300 pF load in typically 10 ns. Bootstrapping for the high-side drive is internally implemented which allows for a reduced system cost and design complexity. The MCP14700 features under voltage lock out (UVLO) with a typical hysteresis of 500 mV. Overtemperature protection with hysteresis is also featured on the device. Package Types MCP14700 SOIC PHASE 1 8 HIGHDR PWMHI 2 PWMLO 3 GND 4 7 BOOT 6 VCC 5 LOWDR MCP14700 3x3 DFN* PHASE 1 PWMHI 2 PWMLO 3 GND 4 8 HIGHDR EP 9 7 BOOT 6 VCC 5 LOWDR * Includes Exposed Thermal Pad (EP); see Table 3-1. (c) 2009 Microchip Technology Inc. DS22201A-page 1 MCP14700 Typical Application Schematic Synchronous Buck Application VBUCK = 30V CBOOT VCC = 5.0V CURRENT SENSE BOOT HIGHDR VCC MCP14700 PWMHI PHASE PWMLO LOWDR GND dsPIC33FJ06GS101 PWM1L AN0 PWM1H AN1 CURRENT SENSE 3-Phase BLDC Motor Control Application 24V 24V VCC VCC PWM1 BOOT HIGHDR BOOT HIGHDR VCC MCP14700 MCP14700 PWMHI PHASE PHASE PWMH PWMLO LOWDR LOWDR PWMLO PWM2 GND VCC PWM5 PWM6 GND SENSE NODE SENSE NODE 24V VCC PWM3 VCC PWM1 PWM2 PWM3 PWM4 PWM5 PWM6 BOOT HIGHDR MCP14700 PWMHI PHASE PWM4 PWMLO LOWDR GND SENSE NODE VREF dsPIC DS22201A-page 2 (c) 2009 Microchip Technology Inc. MCP14700 Functional Block Diagram VCC BOOT Level Shift PWMHI PWMLO HIGHDR Input Circuitry PHASE Logic VCC LOWDR GND VCC Protection Circuitry GND (c) 2009 Microchip Technology Inc. DS22201A-page 3 MCP14700 NOTES: DS22201A-page 4 (c) 2009 Microchip Technology Inc. MCP14700 1.0 ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings VCC........................................................ -0.3V to +7.0V VBOOT.................................................. -0.3V to +36.0V VPHASE ............................ VBOOT - 7V to VBOOT + 0.3V VPWM .............................................-0.3V to VCC + 0.3V VHIGHDR ......................VPHASE - 0.3V to VBOOT + 0.3V VLOWDR .........................................-0.3V to VCC + 0.3V ESD Protection on all Pins .........................2 kV (HBM) ....................................................................400V (MM) Notice: Stresses above those listed under "Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational sections of this specification is not intended. Exposure to maximum rating conditions for extended periods may affect device reliability. DC CHARACTERISTICS Electrical Specifications: Unless otherwise noted, VCC = 5.0V, TJ = -40C to +125C Parameters Sym Min Typ Max Units Conditions VCC Operating Range VCC 4.5 5.0 5.5 V Bias Supply Voltage IVCC -- 45 -- A UVLO (Rising VCC) VUVLO -- 3.50 4.00 V UVLO Hysteresis VHYS -- 500 -- mV PWM Input Current IPWM -- 7.0 10 A VPWM = 3.0V PWM Input Current IPWM -- 1.0 -- nA VPWM = 0V PWMLO and PWMHI Rising Threshold PWMHI_TH 1.40 1.60 1.80 V VCC = 5.0V PWMLO and PWMHI Falling Threshold PWMLO_TH 1.10 1.20 1.30 V VCC = 5.0V PWMHYS -- 400 -- mV VCC = 5.0V High Output Voltage (HIGHDR and LOWDR) VOH VCC - 0.025 -- -- V VCC = 5.0V Low Output Voltage (HIGHDR and LOWDR) VOL -- -- 0.025 V VCC = 5.0V High Drive Source Resistance RHI_SRC -- 1.0 2.5 500 mA source current, Note 1 VCC Supply Requirements PWMHI and PWMLO pin floating PWM Input Requirements PWM Input Hysteresis Output Requirements High Drive Sink Resistance RHI_SINK -- 1.0 2.5 500 mA sink current, Note 1 High Drive Source Current IHI_SRC -- 2.0 -- A Note 1 High Drive Sink Current IHI_SINK -- 2.0 -- A Note 1 Low Drive Source Resistance RLO_SRC -- 1.0 2.5 500 mA source current, Note 1 Low Drive Sink Resistance RLO_SINK -- 0.5 1.0 500 mA sink current, Note 1 Low Drive Source Current ILO_SRC -- 2.0 -- A Note 1 Low Drive Sink Current ILO_SINK -- 3.5 -- A Note 1 Note 1: 2: Parameter ensured by characterization, not production tested. See Figure 4-1 and Figure 4-2 for parameter definition. (c) 2009 Microchip Technology Inc. DS22201A-page 5 MCP14700 DC CHARACTERISTICS (CONTINUED) Electrical Specifications: Unless otherwise noted, VCC = 5.0V, TJ = -40C to +125C Parameters Sym Min Typ Max Units Conditions Switching Times HIGHDR Rise Time tRH -- 10 -- ns CL = 3.3 nF, Note 1, Note 2 LOWDR Rise Time tRL -- 10 -- ns CL = 3.3 nF, Note 1, Note 2 HIGHDR Fall Time tFH -- 10 -- ns CL = 3.3 nF, Note 1, Note 2 LOWDR Fall Time tFL -- 6.0 -- ns CL = 3.3 nF, Note 1, Note 2 HIGHDR Turn-off Propagation Delay tPDLH 20 27 36 ns No Load, Note 1, Note 2 LOWDR Turn-off Propagation Delay tPDLL 10 17 25 ns No Load, Note 1, Note 2 HIGHDR Turn-on Propagation Delay tPDHH 20 27 36 ns No Load, Note 1, Note 2 LOWDR Turn-on Propagation Delay tPDHL 10 17 25 ns No Load, Note 1, Note 2 TSHDN -- 147 -- C Note 1 TSHDN_HYS -- 20 -- C Note 1 Protection Requirements Thermal Shutdown Thermal Shutdown Hysteresis Note 1: 2: Parameter ensured by characterization, not production tested. See Figure 4-1 and Figure 4-2 for parameter definition. TEMPERATURE CHARACTERISTICS Unless otherwise noted, all parameters apply with VCC = 5.0V Parameter Sym Min Typ Max Units TJ -- -- +150 C Storage Temperature TA -65 -- +150 C Specified Temperature Range TA -40 -- +125 C JA -- 64 -- C/W JC -- 12 -- C/W JA -- 163 -- C/W JC -- 42 -- C/W Comments Temperature Ranges Maximum Junction Temperature Package Thermal Resistances Thermal Resistance, 8L-3x3 DFN Thermal Resistance, 8L-SOIC DS22201A-page 6 Typical Four-layer board with vias to ground plane (c) 2009 Microchip Technology Inc. MCP14700 2.0 TYPICAL PERFORMANCE CURVES Note: The graphs and tables provided following this note are a statistical summary based on a limited number of samples and are provided for informational purposes only. The performance characteristics listed herein are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified operating range (e.g., outside specified power supply range) and therefore outside the warranted range. Note: Unless otherwise indicated, TA = +25C with VCC = 5.0V. 25 16 14 Fall Time (ns) Rise Time (ns) 20 15 tRL 10 tRH 5 tFH 12 10 tFL 8 6 4 2 0 0 0 1500 3000 4500 6000 7500 0 1500 Capacitive Load (pF) FIGURE 2-1: Load. Rise Time vs. Capacitive FIGURE 2-4: Load. 14 13 14 CLOAD = 3,300 pF Time (ns) 12 tFH 11 tRH 10 9 7500 Fall Time vs. Capacitive CLOAD = 3,300 pF tRL 10 9 8 7 7 6 6 t FL 5 -40 -25 -10 5 -40 -25 -10 20 35 50 65 80 95 110 125 5 Temperature (oC) FIGURE 2-2: vs. Temperature. 20 35 50 65 80 95 110 125 Temperature (oC) HIGHDR Rise and Fall Time FIGURE 2-5: vs. Temperature. 36 LOWDR Rise and Fall Time 24 CLOAD = 3,300 pF tPDLH 32 30 tPDHH 28 26 24 22 20 Propagation Delay (ns) Propagation Delay (ns) 6000 11 8 34 4500 12 Time (ns) 13 3000 Capacitive Load (pF) CLOAD = 3,300 pF 22 t PDHL 20 18 tPDLL 16 14 12 10 -40 -25 -10 5 20 35 50 65 80 95 110 125 -40 -25 -10 o HIGHDR Propagation Delay (c) 2009 Microchip Technology Inc. 20 35 50 65 80 95 110 125 Temperature (oC) Temperature ( C) FIGURE 2-3: vs. Temperature. 5 FIGURE 2-6: vs. Temperature. LOWDR Propagation Delay DS22201A-page 7 MCP14700 Note: Unless otherwise indicated, TA = +25C with VCC = 5.0V. 70 48 Supply Current (A) Supply Current (mA) CLOAD = 3,300 pF 60 50 40 30 20 10 0 100 47 CLOAD = 3,300 pF 46 45 44 43 PWM = 1 42 PWM = 0 41 40 1000 10000 -40 -25 -10 DS22201A-page 8 Supply Current vs. 20 35 50 65 80 95 110 125 Temperature (C) Frequency (kHz) FIGURE 2-7: Frequency. 5 FIGURE 2-8: Temperature. Supply Current vs. (c) 2009 Microchip Technology Inc. MCP14700 3.0 PIN DESCRIPTIONS The descriptions of the pins are listed in Table 3-1. TABLE 3-1: PIN FUNCTION TABLE MCP14700 Symbol 3.1 Description 3x3 DFN SOIC 1 1 PHASE Switch Node 2 2 PWMHI High-Side PWM Control Input Signal 3 3 PWMLO Low-Side PWM Control Input Signal 4 4 GND 5 5 LOWDR 6 6 VCC 7 7 BOOT 8 8 HIGHDR 9 -- EP Switch Node (PHASE) Ground Low-side Gate Drive Supply Input Voltage Floating Bootstrap Supply High-Side Gate Drive Exposed Metal Pad 3.6 Supply Input Voltage (VCC) The PHASE pin provides a return path for the high-side gate driver. The source of the high-side and the drain of the low-side power MOSFETs are connected to this pin. The VCC pin provides bias to the MCP14700 device. A bypass capacitor is to be placed between this pin and the GND pin. This capacitor should be placed as close to the MCP14700 as possible. 3.2 3.7 High-Side PWM Control Input Signal (PWMHI) Floating Bootstrap Supply (BOOT) The PWM input signal to control the high-side power MOSFET is applied to the PWMHI pin. A logic high on the PWMHI pin causes the HIGHDR pin to also transition high. The BOOT pin is the floating bootstrap supply pin for the high-side gate drive. A capacitor is connected between this pin and the PHASE pin to provide the necessary charge to turn on the high-side power MOSFET. 3.3 3.8 Low-Side PWM Control Input Signal (PWMLO) The PWM input signal to control the low-side power MOSFET is applied to the PWMLO pin. A logic high on the PWMLO pin causes the LOWDR pin to also transition high. 3.4 Ground (GND) The GND pin provides ground for the MCP14700 circuitry. It should have a low-impedance connection to the bias supply source return. High peak currents will flow out the GND pin when the low-side power MOSFET is being turned off. 3.5 High-Side Gate Drive (HIGHDR) The HIGHDR pin provides the gate drive signal to control the high-side power MOSFET. The gate of the high-side power MOSFET is connected to this pin. 3.9 Exposed Metal Pad (EP) The exposed metal pad of the DFN package is not internally connected to any potential. Therefore, this pad can be connected to a ground plane or other copper plane on a printed circuit board to aid in heat removal from the package. Low-side Gate Drive (LOWDR) The LOWDR pin provides the gate drive signal to control the low-side power MOSFET. The gate of the low-side power MOSFET is connected to this pin. (c) 2009 Microchip Technology Inc. DS22201A-page 9 MCP14700 NOTES: DS22201A-page 10 (c) 2009 Microchip Technology Inc. MCP14700 4.0 DETAILED DESCRIPTION 4.1 Device Overview When designing with the MCP14700 in applications where cross conduction of the external MOSFETs is not desired, care must be taken to ensure the PWM inputs have the proper timing. There is no internal cross conduction protection in the MCP14700. The MCP14700 is a synchronous MOSFET driver with dual independent PWM inputs capable of controlling both a ground referenced and floating N-Channel MOSFET. The PWM input threshold levels are truly 3.0V logic tolerant and have 400 mV of typical hystereses making the MCP14700 ideal for use with low voltage controllers. 4.3 The UVLO feature of the MCP14700 does not allow the HIGHDR or LOWDR output to function when the input voltage, VCC, is below the UVLO threshold regardless of the state of the PWMHI and PWMLO pins. The MCP14700 is capable of suppling 2A (typical) peak current to the floating high-side MOSFET that is connected to the HIGHDR. With the exception of a capacitor, all of the circuitry needed to drive this high-side N-channel MOSFET is internal to the MCP14700. A blocking device is placed between the VCC and BOOT pins that allows the bootstrap capacitor to be charged to VCC when the low-side power MOSFET is conducting. Refer to the application section, Section 5.1 "Bootstrap Capacitor Select", for information on determining the proper size of the bootstrap capacitor. The HIGHDR is also capable of sinking 2A (typical) peak current. Once VCC reaches the UVLO threshold, the HIGHDR and LOWDR outputs will respond to the state of the PWMHI or PWMLO pins. There is a 500 mV hystereses on the UVLO threshold. 4.4 Overtemperature Protection The MCP14700 is protected from an overtemperature condition by an internal thermal shutdown feature. When the internal temperature of the MCP14700 reaches 147C typically, the HIGHDR and LOWDR outputs will transition to a low state regardless of the state of the PWMHI or PWMLO pins. Once the internal temperature is reduced by 20C typically, the MCP14700 will automatically respond to the states of the PWMHI and PWMLO pins. The LOWDR is capable of sourcing 2A (typical) peak current and sinking 3.5A (typical) peak current. This helps ensure that the low-side MOSFET stays turned off during the high dv/dt of the PHASE node. 4.2 Under Voltage Lockout (UVLO) 4.5 PWM Inputs Timing Diagram The PWM signal applied to the MCP14700 is supplied by a controller IC. The timing diagram in Figure 4-1 graphically depicts the PWM signal and the output signals of the MCP14700. A logic high on either PWM pin causes the corresponding output drive signal to be high. See Figure 4-1 and Figure 4-2 for a graphical representation of the MCP14700 operation. Internally the PWM pins are pulled to ground to ensure there is no drive signal to the external MOSFETs if the pins are left floating. For reliable operation, it is recommended that the rising and falling slew rate of the PWM signal be faster than 1V/50 ns. PWMLO tPDHL tPDLL LOWDR tRL tFL FIGURE 4-1: MCP14700 LOWDR Timing Diagram. (c) 2009 Microchip Technology Inc. DS22201A-page 11 MCP14700 PWMHI tPDHH tPDLH HIGHDR tRH tFH FIGURE 4-2: DS22201A-page 12 MCP14700 HIGHDR Timing Diagram. (c) 2009 Microchip Technology Inc. MCP14700 5.0 APPLICATION INFORMATION 5.3 5.1 Bootstrap Capacitor Select The power dissipated in the MCP14700 consists of the power loss associated with the quiescent power and the gate charge power. The selection of the bootstrap capacitor is based upon the total gate charge of the high-side power MOSFET and the allowable droop in gate drive voltage while the high-side power MOSFET is conducting. EQUATION 5-1: Q GATE C BOOT ----------------------------V DROOP Where: Power Dissipation The quiescent power loss can be calculated by the following equation and is typically negligible compared to the gate drive power loss. EQUATION 5-2: P Q = I VCC x V CC Where: PQ = Quiescent power loss CBOOT = Bootstrap capacitor value IVCC = No Load Bias Current QGATE = Total gate charge of the high-side MOSFET VCC = Bias Voltage VDROO = Allowable gate drive voltage droop For example: QGATE = 30 nC VDROOP = 200 mV CBOOT 0.15 uF A low ESR ceramic capacitor is recommend with a maximum voltage rating that exceeds the maximum input voltage, VCC, plus the maximum supply voltage, VSUPPLY. It is also recommended that the capacitance of CBOOT does not exceed 1.2 uF. 5.2 Decoupling Capacitor Proper decoupling of the MCP14700 is highly recommended to help ensure reliable operation. This decoupling capacitor should be placed as close to the MCP14700 as possible. The large currents required to quickly charge the capacitive loads are provided by this capacitor. A low ESR ceramic capacitor is recommended. (c) 2009 Microchip Technology Inc. The main power loss occurs from the gate charge power loss. This power loss can be defined in terms of both the high-side and low-side power MOSFETs. EQUATION 5-3: P GATE = P HIGHDR + P LOWDR P HIGHDR = V CC x Q HIGH x F SW P LOWDR = V CC x Q LOW x F SW Where: PGATE = Total Gate Charge Power Loss PHIGHDR = High-Side Gate Charge Power Loss PLOWDR = Low-Side Gate Charge Power Loss VCC = Bias Supply Voltage QHIGH = High-Side MOSFET Total Gate Charge QLOW = Low-Side MOSFET Total GAte Charge FSW = Switching Frequency DS22201A-page 13 MCP14700 5.4 PCB Layout Proper PCB layout is important in a high current, fast switching circuit to provide proper device operation. Improper component placement may cause errant switching, excessive voltage ringing, or circuit latch-up. There are two important states of the MCP14700 outputs, high and low. Figure 5-1 depicts the current flow paths when the outputs of the MCP14700 are high and the power MOSFETs are turned on. The charge needed to turn on the low-side power MOSFET comes from the decoupling capacitor CVCC. The current flows from this capacitor through the internal LOWDR circuitry, into the gate of the low-side power MOSFET, out the source, into the ground plane, and back to CVCC. To reduce any excess voltage ringing or spiking, the inductance and area of this current loop must be minimized. Figure 5-2 depicts the current flow paths when the outputs of the MCP14700 are low and the power MOSFETs are turned off. These current paths should also have low inductance and a small loop area to minimize the voltage ringing and spiking. CBOOT VSUPPLY MCP14700 PWMHI PWMLO VCC CVCC CBOOT VSUPPLY MCP14700 FIGURE 5-2: PWMHI The following recommendations should be followed for optimal circuit performance: PWMLO VCC CVCC FIGURE 5-1: Turn On Current Paths. The charge needed to turn on the high-side power MOSFET comes from the bootstrap capacitor CBOOT. Current flows from CBOOT through the internal HIGHDR circuitry, into the gate of the high-side power MOSFET, out the source and back to CBOOT. The printed circuit board traces that construct this current loop need to have a small area and low inductance. To control the inductance, short and wide traces must be used. DS22201A-page 14 Turn Off Current Paths. - The components that construct the high current paths previously mentioned should be placed close the MCP14700 device. The traces used to construct these current loops should be wide and short to keep the inductance and impedance low. - A ground plane should be used to keep both the parasitic inductance and impedance minimized. The MCP14700 device is capable of sourcing and sinking high peaks current and any extra parasitic inductance or impedance will result in non-optimal performance. (c) 2009 Microchip Technology Inc. MCP14700 6.0 PACKAGING INFORMATION 6.1 Package Marking Information Example: 8-Lead DFN (3x3) XXXX YYWW NNN Code MCP14700 DABR Note: Applies to 8-Lead 3x3 DFN 8-Lead SOIC (150 mil) XXXXXXXX XXXXYYWW NNN DABR 0933 256 Example: 14700E SN e3 0933 256 Legend: XX...X Y YY WW NNN e3 * Note: Device Customer-specific information Year code (last digit of calendar year) Year code (last 2 digits of calendar year) Week code (week of January 1 is week `01') Alphanumeric traceability code Pb-free JEDEC designator for Matte Tin (Sn) This package is Pb-free. The Pb-free JEDEC designator ( e3 ) can be found on the outer packaging for this package. In the event the full Microchip part number cannot be marked on one line, it will be carried over to the next line, thus limiting the number of available characters for customer-specific information. (c) 2009 Microchip Technology Inc. DS22201A-page 15 MCP14700 % 2% & %! % * %% 133)))& &3 " ) * ' !"#$ % * D e b N $ % % " % N L EXPOSED PAD E2 E K NOTE 1 1 2 D2 2 NOTE 1 1 BOTTOM VIEW TOP VIEW A NOTE 2 A3 A1 4% & 5&% 6!&( $ 55,, 6 6 67 8 9 % :./0 7 ; % 9 % "$$ . 0% %* + 7 5 % ,# , " "<"% ,2 +/0 = : 7 <"% , ,# = ( . + +. 5 + .. > = = " "5 % 0% %<"% 0% %5 % 0% % % ,# " " +/0 % ! " #$ %! & '(!%&! %( % ")%% % " * & & # "% ( % " + * ) ! % " & "% ,-. /01 / & % # % ! ))%!%% ,21 $ & '! ! )%!%% '$$& % ! ) 0 :/ DS22201A-page 16 (c) 2009 Microchip Technology Inc. MCP14700 % 2% & %! % * %% 133)))& &3 (c) 2009 Microchip Technology Inc. " ) * ' !"#$ % * $ % % " % DS22201A-page 17 MCP14700 % & ' (&))* 2% & %! % * %% 133)))& &3 " ) * ' !"#&'+,$ % * $ % % " % D e N E E1 NOTE 1 1 2 3 h b h A2 A c L A1 L1 4% & 5&% 6!&( $ 55,, 6 6 8 /0 7 ; % * % "$$? 7 <"% " " * 67 9 % " " * = = . = = = . , <"% 7 5 % . :/0 , +/0 /0 0 &$ @ % A . = . 2%5 % 5 = 2% % 5 2% I B = 9B 5 "* = . 5 "<"% ,2 ( + = . " $% D .B = .B " $% /%%& E .B = .B % ! " #$ %! & '(!%&! %( % ")%% % " ? $ %0 % % + & ","%!" &"$ %! "$ %! % # ".&& & "% ,-. /01 / & % # % ! ))%!%% ,21 $ & '! ! )%!%% '$$& % ! " ) 0 ./ DS22201A-page 18 (c) 2009 Microchip Technology Inc. MCP14700 % & ' (&))* 2% & %! % * %% 133)))& &3 (c) 2009 Microchip Technology Inc. " ) * ' !"#&'+,$ % * $ % % " % DS22201A-page 19 MCP14700 NOTES: DS22201A-page 20 (c) 2009 Microchip Technology Inc. MCP14700 APPENDIX A: REVISION HISTORY Revision A (September 2009) * Original Release of this Document. (c) 2009 Microchip Technology Inc. DS22201A-page 21 MCP14700 NOTES: DS22201A-page 22 (c) 2009 Microchip Technology Inc. MCP14700 PRODUCT IDENTIFICATION SYSTEM To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office. PART NO. X /XX Device Temperature Range Package Device MCP14700: MCP14700T: Dual Input Synchronous MOSFET Driver Dual Input Synchronous MOSFET Driver Tape and Reel (DFN and SOIC) Examples: a) b) Extended Temperature, 8LD DFN package. MCP14700T-E/MF: Tape and Reel, Extended Temperature, 8LD DFN package. a) MCP14700-E/SN: b) Temperature Range E = -40C to +125C (Extended) Package MF = Plastic Dual Flat, No Lead (3x3 DFN), 8-lead SN = Plastic Small Outline, (3.90 mm), 8-lead (c) 2009 Microchip Technology Inc. MCP14700-E/MF: Extended Temperature, 8LD SOIC package. MCP14700T-E/SN: Tape and Reel, Extended Temperature, 8LD SOIC package. DS22201A-page 23 MCP14700 NOTES: DS22201A-page 24 (c) 2009 Microchip Technology Inc. Note the following details of the code protection feature on Microchip devices: * Microchip products meet the specification contained in their particular Microchip Data Sheet. * Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the intended manner and under normal conditions. * There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip's Data Sheets. Most likely, the person doing so is engaged in theft of intellectual property. * Microchip is willing to work with the customer who is concerned about the integrity of their code. * Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not mean that we are guaranteeing the product as "unbreakable." Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our products. Attempts to break Microchip's code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act. Information contained in this publication regarding device applications and the like is provided only for your convenience and may be superseded by updates. It is your responsibility to ensure that your application meets with your specifications. MICROCHIP MAKES NO REPRESENTATIONS OR WARRANTIES OF ANY KIND WHETHER EXPRESS OR IMPLIED, WRITTEN OR ORAL, STATUTORY OR OTHERWISE, RELATED TO THE INFORMATION, INCLUDING BUT NOT LIMITED TO ITS CONDITION, QUALITY, PERFORMANCE, MERCHANTABILITY OR FITNESS FOR PURPOSE. Microchip disclaims all liability arising from this information and its use. Use of Microchip devices in life support and/or safety applications is entirely at the buyer's risk, and the buyer agrees to defend, indemnify and hold harmless Microchip from any and all damages, claims, suits, or expenses resulting from such use. No licenses are conveyed, implicitly or otherwise, under any Microchip intellectual property rights. Trademarks The Microchip name and logo, the Microchip logo, dsPIC, KEELOQ, KEELOQ logo, MPLAB, PIC, PICmicro, PICSTART, rfPIC and UNI/O are registered trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. FilterLab, Hampshire, HI-TECH C, Linear Active Thermistor, MXDEV, MXLAB, SEEVAL and The Embedded Control Solutions Company are registered trademarks of Microchip Technology Incorporated in the U.S.A. Analog-for-the-Digital Age, Application Maestro, CodeGuard, dsPICDEM, dsPICDEM.net, dsPICworks, dsSPEAK, ECAN, ECONOMONITOR, FanSense, HI-TIDE, In-Circuit Serial Programming, ICSP, Mindi, MiWi, MPASM, MPLAB Certified logo, MPLIB, MPLINK, mTouch, Octopus, Omniscient Code Generation, PICC, PICC-18, PICDEM, PICDEM.net, PICkit, PICtail, PIC32 logo, REAL ICE, rfLAB, Select Mode, Total Endurance, TSHARC, UniWinDriver, WiperLock and ZENA are trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. SQTP is a service mark of Microchip Technology Incorporated in the U.S.A. All other trademarks mentioned herein are property of their respective companies. (c) 2009, Microchip Technology Incorporated, Printed in the U.S.A., All Rights Reserved. Printed on recycled paper. Microchip received ISO/TS-16949:2002 certification for its worldwide headquarters, design and wafer fabrication facilities in Chandler and Tempe, Arizona; Gresham, Oregon and design centers in California and India. The Company's quality system processes and procedures are for its PIC(R) MCUs and dsPIC(R) DSCs, KEELOQ(R) code hopping devices, Serial EEPROMs, microperipherals, nonvolatile memory and analog products. In addition, Microchip's quality system for the design and manufacture of development systems is ISO 9001:2000 certified. (c) 2009 Microchip Technology Inc. DS22201A-page 25 WORLDWIDE SALES AND SERVICE AMERICAS ASIA/PACIFIC ASIA/PACIFIC EUROPE Corporate Office 2355 West Chandler Blvd. Chandler, AZ 85224-6199 Tel: 480-792-7200 Fax: 480-792-7277 Technical Support: http://support.microchip.com Web Address: www.microchip.com Asia Pacific Office Suites 3707-14, 37th Floor Tower 6, The Gateway Harbour City, Kowloon Hong Kong Tel: 852-2401-1200 Fax: 852-2401-3431 India - Bangalore Tel: 91-80-3090-4444 Fax: 91-80-3090-4080 India - New Delhi Tel: 91-11-4160-8631 Fax: 91-11-4160-8632 Austria - Wels Tel: 43-7242-2244-39 Fax: 43-7242-2244-393 Denmark - Copenhagen Tel: 45-4450-2828 Fax: 45-4485-2829 India - Pune Tel: 91-20-2566-1512 Fax: 91-20-2566-1513 France - Paris Tel: 33-1-69-53-63-20 Fax: 33-1-69-30-90-79 Japan - Yokohama Tel: 81-45-471- 6166 Fax: 81-45-471-6122 Germany - Munich Tel: 49-89-627-144-0 Fax: 49-89-627-144-44 Atlanta Duluth, GA Tel: 678-957-9614 Fax: 678-957-1455 Boston Westborough, MA Tel: 774-760-0087 Fax: 774-760-0088 Chicago Itasca, IL Tel: 630-285-0071 Fax: 630-285-0075 Cleveland Independence, OH Tel: 216-447-0464 Fax: 216-447-0643 Dallas Addison, TX Tel: 972-818-7423 Fax: 972-818-2924 Detroit Farmington Hills, MI Tel: 248-538-2250 Fax: 248-538-2260 Kokomo Kokomo, IN Tel: 765-864-8360 Fax: 765-864-8387 Los Angeles Mission Viejo, CA Tel: 949-462-9523 Fax: 949-462-9608 Santa Clara Santa Clara, CA Tel: 408-961-6444 Fax: 408-961-6445 Toronto Mississauga, Ontario, Canada Tel: 905-673-0699 Fax: 905-673-6509 Australia - Sydney Tel: 61-2-9868-6733 Fax: 61-2-9868-6755 China - Beijing Tel: 86-10-8528-2100 Fax: 86-10-8528-2104 China - Chengdu Tel: 86-28-8665-5511 Fax: 86-28-8665-7889 Korea - Daegu Tel: 82-53-744-4301 Fax: 82-53-744-4302 China - Hong Kong SAR Tel: 852-2401-1200 Fax: 852-2401-3431 Korea - Seoul Tel: 82-2-554-7200 Fax: 82-2-558-5932 or 82-2-558-5934 China - Nanjing Tel: 86-25-8473-2460 Fax: 86-25-8473-2470 Malaysia - Kuala Lumpur Tel: 60-3-6201-9857 Fax: 60-3-6201-9859 China - Qingdao Tel: 86-532-8502-7355 Fax: 86-532-8502-7205 Malaysia - Penang Tel: 60-4-227-8870 Fax: 60-4-227-4068 China - Shanghai Tel: 86-21-5407-5533 Fax: 86-21-5407-5066 Philippines - Manila Tel: 63-2-634-9065 Fax: 63-2-634-9069 China - Shenyang Tel: 86-24-2334-2829 Fax: 86-24-2334-2393 Singapore Tel: 65-6334-8870 Fax: 65-6334-8850 China - Shenzhen Tel: 86-755-8203-2660 Fax: 86-755-8203-1760 Taiwan - Hsin Chu Tel: 886-3-6578-300 Fax: 886-3-6578-370 China - Wuhan Tel: 86-27-5980-5300 Fax: 86-27-5980-5118 Taiwan - Kaohsiung Tel: 886-7-536-4818 Fax: 886-7-536-4803 China - Xiamen Tel: 86-592-2388138 Fax: 86-592-2388130 Taiwan - Taipei Tel: 886-2-2500-6610 Fax: 886-2-2508-0102 China - Xian Tel: 86-29-8833-7252 Fax: 86-29-8833-7256 Thailand - Bangkok Tel: 66-2-694-1351 Fax: 66-2-694-1350 Italy - Milan Tel: 39-0331-742611 Fax: 39-0331-466781 Netherlands - Drunen Tel: 31-416-690399 Fax: 31-416-690340 Spain - Madrid Tel: 34-91-708-08-90 Fax: 34-91-708-08-91 UK - Wokingham Tel: 44-118-921-5869 Fax: 44-118-921-5820 China - Zhuhai Tel: 86-756-3210040 Fax: 86-756-3210049 03/26/09 DS22201A-page 26 (c) 2009 Microchip Technology Inc.