FDS4559_F085 - ON SEMICONDUCTOR

2008 Semiconductor Components Industries,

LLC.December-2017, Rev 1

FDS4559-F085

60V Complementary PowerTrenchMOSFET

General Description

This complementary MOSFET device is produced using

ON Semiconductor’s advanced PowerTrench

process that has been especially tailored to

minimize the on-state resistance and yet

maintain low gate charge for superior switching

performance.

Applications

•DC/DC convert er

•Power managem ent

•LCD backli ght inverter

Features

•Q1: N-Channel

4.5 A, 60 V RDS(on) = 55 mΩ @ VGS = 10V

RDS(on) = 75 mΩ @ VGS = 4.5V

•Q2: P-Channel

–3.5 A, –60 V RDS(on) = 105 mΩ @ VGS = –10V

DS(on) = 135 mΩ@ VGS = –4.5V

SO-8

D1 D1 D2 D2

S1G1S2G2

Pin 1

SO-8

Absolute Maximum Ratings TA = 25°C unless otherwise noted

Symbol Parameter Q1 Q2 Units

VDSS Drain-Source

Voltage 60 –60 V

VGSS Gate-Source

Voltage ±20 ±20 V

ID Drain Current - Continuous (Note 1a) 4.5 –3.5 A

- Pulsed 20 –20

PD Power Dissipation for Dual Operati on 2 W

Power Dissipation for Single Operation (Note 1a) 1.6

(Note 1b) 1.2

(Note 1c) 2

TJ, TSTG Operating and St orage J unction Tem perature Range -55 to +150 °C

Thermal Characteristics

RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 78 °C/W

RθJC Thermal Resistance, Junct i on-to-Case (Note 1) 40 °C/W

Package Marking and Ordering Information

Device Marki ng Device Reel Siz e Tape width Quantity

units

FDS4559_F085 60V Complementary PowerTrench MOSFET

FDS4559 13” 12mm 2500

Publication Order Number:

FDS4559-F085/D

FDS4559-F085

Qualified to AEC Q101

RoHS Compliant

•

Electrical Characteristics TA = 25°C unless otherwise noted

Symbol Parameter Test Conditions Type Min Typ Max Units

Drain-Source Avalanche Ratings (Note 1)

WDSS Single Pulse Drain-Source

Avalanche E nergy VDD = 30 V, ID = 4.5 A Q1 90 mJ

IAR Maximum Drain-Source

Avalanche Current Q1 4.5 A

Off Characteristics

BVDSS Drain-Sourc e Breakdown

Voltage VGS = 0 V, ID = 250 µA

VGS = 0 V, ID = –250 µA Q1

Q2 60

–60 V

∆BVDSS

∆TJ Breakdown Voltage

Temperature Coefficient ID = 250 µA, Referenced to 25°C

ID = –250 µA, Referenced to 25°C Q1

Q2 58

–49 mV/°C

IDSS Zero Gate Volt age Drain

Current VDS = 48 V, VGS = 0 V

VDS = –48 V, VGS = 0 V Q1

Q2 1

–1 µA

IGSS Gate-Body Leakage VGS = +20 V, VDS = 0 V

VGS = +20 V, VDS = 0 V Q1

Q2 +

100

+100 nA

On Characteristics (Note 2)

VGS(th) Gate Threshold V ol t age VDS = VGS, ID = 250 µA

VDS = VGS, ID = –250 µA Q1

Q2 1

–1 2.2

–1.6 3

–3 V

∆VGS(th)

∆TJ Gate Threshold Vol tage

Temperature Coefficient ID = 250 µA, Referenced to 25°C

ID = –250 µA, Referenced to 25°C Q1

Q2 –5.5

4mV/°C

Q1 42

RDS(on) Static Drain-S ource

On-Resistance VGS = 10 V, ID = 4.5 A

VGS = 10 V, ID = 4.5 A, TJ = 125°C

VGS = 4.5 V, ID = 4 A

VGS = –10 V, ID = –3.5 A

VGS = –10 V, ID = –3.5 A , T J = 125°C

VGS = –4.5 V, ID = –3. 1 A

Q2 82

130

105

190

135

mΩ

ID(on) On-State Drain Current VGS = 10 V, VDS = 5 V

VGS = –10 V, VDS = –5 V Q1

Q2 20

–20 A

gFS Forward

Transconductance VDS = 10 V, I D = 4. 5 A

VDS = –5 V, ID = –3 5 A Q1

Q2 14

9 S

Dynamic Characteristics

Ciss Input Capacitance Q1

Q2 650

759 pF

Coss Output Capacitance Q1

Q2 80

90 pF

Crss Reverse

Transfer

Capacitance

VDS = 25 V, VGS = 0 V ,

f = 1.0 MHz

VDS = –30 V, VGS = 0 V,

f = 1.0 MHz Q1

Q2 35

39 pF

Switching Characteristics (Note 2)

td(on) Turn-On Delay Time Q1

Q2 11

7 20

14 ns

trTurn-On Rise Time Q1

Q2 8

10 18

20 ns

td(off) Turn-Off Delay Time Q1

Q2 19

19 35

34 ns

tf Turn-Off Fall Time

VDD = 30 V, ID = 1 A,

VGS = 10V, RGEN = 6 Ω

VDD = –30 V, ID = –1 A,

VGS = –10 V, RGEN = 6 Ω Q1

Q2 6

12 15

22 ns

Qg Total Gate Charge Q1

Q2 12.5

15 18

21 nC

Qgs Gate-Source Charge Q1

Q2 2.4

2.5 nC

Qgd Gate-Drain Charge

VDS = 30 V, ID = 4. 5 A , VGS = 10 V

VDS = –30 V, ID = –3. 5 A , VGS = –10V Q1

Q2 2.6

3.0 nC

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FDS4559_F085 60V Complementary PowerTrench MOSFET ®

Electrical Characteristics (continued) TA = 25°C unless otherwise noted

Symbol Parameter Test Conditions Type Min Typ Max Units

Drain-Source Diode Characteristics and Maximum Ratings

IS Maximum Cont i nuous Drain-Source Di ode Forward Current Q1

Q2 1.3

–1.3 A

VSD Drain-Source Diode Forward

Voltage VGS = 0 V, I S = 1.3 A (Note 2)

VGS = 0 V, IS = –1.3 A (Note 2) Q1

Q2 0.8

–0.8 1.2

–1.2 V

Notes:

1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of

the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.

a) 78°C/W when

mounted on a

0.5 in2 pad of 2 oz

copper

b) 125°C/W when

mounted on a .02 in2

pad of 2 oz copper

c) 135°C/W when mounted on a

minimum pad.

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width < 300µs, Duty Cycl e < 2.0%

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FDS4559_F085 60V Complementary PowerTrench MOSFET ®

Typical Characteristics: Q2

012345

-VDS, DRAIN-SOUR CE V O LTAGE (V)

-I

, DRAIN CURRENT (A)

-6.0V

-5.0V

-4.5V

-3.5V

VGS = -10V

-4.0V

-2.5V

-3.0V

0.8

1.2

1.4

1.6

1.8

0246810

-ID, DRAIN CURRE NT (A)

DS(ON)

, NORMALIZED

DRAIN-SOURCE ON-RESISTANCE

VGS = -3.5V

-5.0V

-6.0V -7.0V -8.0V -10V

-4.5V

-4.0V

Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage.

0.4

0.6

0.8

1.2

1.4

1.6

1.8

-50 -25 0 25 50 75 100 125 150 175

TJ, JUNCTION TE MP E RATURE (oC)

DS(ON)

, NORMALIZED

DRAIN-SOURCE ON-RESISTANCE

ID = -3.5A

VGS = -10V

0.1

0.2

0.3

0.4

246810

-VGS, GATE TO SOURCE VOLTAGE (V)

DS(ON)

, ON-RESISTANCE (OHM)

ID = -1.5A

TA = 125oC

TA = 25oC

Figure 3. On-Resistance Variation with

Temperature. Figure 4. On-Resistance Variation with

Gate-to-Source Voltage.

12345

-VGS, GATE TO SOURCE VOLTAGE (V)

-I

, DRAIN CURRENT (A)

TA = -55oC25oC

125oC

VDS = -5V

0.001

0.01

0.1

100

0 0.2 0.4 0.6 0.8 1 1.2 1.4

-VSD, BODY DIO DE FO RWARD VOL TAG E (V )

-I

, REVERSE DRAIN CURRENT (A)

VGS = 0V

TA = 125oC

25oC

-55oC

Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation

with Source Current and Temperature.

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FDS4559_F085 60V Complementary PowerTrench MOSFET ®

Typical Characteristics: Q2

048

1216

Qg, GATE CHARGE (nC)

-V

, GATE-SOURCE VOLTAGE (V)

ID = -3.0A VDS = 10V 20V

30V

200

400

600

800

1000

1200

0 102030405060

-VDS, DRAIN TO S OURCE VO LTAG E (V)

CAPACITANCE (pF)

CISS

COSS

CRSS

f = 1 M H z

VGS = 0 V

Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.

0.01

0.1

100

0.1 1 10 100

-VDS, DRAIN-SOURCE VOLTAGE (V)

, DRAIN CURRENT (A)

DC10s1s

100ms

100µs

RDS(ON) LIMIT

VGS = -10V

SINGLE PULSE

RθJA = 135oC/W

TA = 25oC

10ms

0.01 0.1 1 10 100 1000

t1, TIME (s e c )

P(pk), PEAK TRANSIENT POWER (W)

SINGLE PULSE

RθJA = 135°C/W

TA = 25°C

Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum

Power Dissipation.

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FDS4559_F085 60V Complementary PowerTrench MOSFET ®

Typical Characteristics: Q1

01234

VDS, DRAIN-SOURCE VOLTAGE (V)

, DRAIN-SOURCE CURRENT (A)

VGS = 10V

6.0V

5.0V

4.5V

4.0V

3.5V

0.8

1.2

1.4

1.6

1.8

0 4 8 12 16 20

ID, DRAIN CURRENT (A)

DS(ON)

, NORMALIZED

DRAIN-SOURCE ON-RESISTANCE

VGS = 4.0V

10V

5.0V

4.5V

6.0V 8.0V

Figure 11. On-Region Characteristics. Figure 12. On-Resistance Variation with

Drain Current and Gate Voltage.

0.4

0.6

0.8

1.2

1.4

1.6

1.8

2.2

-50 -25 0 25 50 75 100 125 150 175

TJ, JUNCTION TEMPERATURE (oC)

DS(ON)

, NORMALIZED

DRAIN-SOURCE ON-RESISTANCE

ID = 4.5A

VGS = 10V

0.02

0.04

0.06

0.08

0.1

0.12

0.14

246810

VGS, GATE TO SOURCE VOLTAGE (V)

DS(ON)

, ON-RESISTANCE (OHM)

ID = 2.3A

TA = 125oC

TA = 25oC

Figure 13. On-Resistance Variation with

Temperature. Figure 14. On-Resistance Variation with

Gate-to-Source Voltage.

123456

VGS, GAT E TO SOURCE VOLTAGE (V)

, DRAIN CURRENT (A)

TA = -55oC25oC

125oC

VDS = 5V

0.0001

0.001

0.01

0.1

100

0 0.2 0.4 0.6 0.8 1 1.2

VSD, BODY DIODE FORWARD VOLTAGE (V)

, REVERSE DRAIN CURRENT (A)

TA = 125oC

25oC

-55oC

VGS = 0V

Figure 15. Transfer Characteristics. Figure 16. Body Diode Forward Voltage Variation

with Source Current and Temperature.

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FDS4559_F085 60V Complementary PowerTrench MOSFET ®

Typical Characteristics: Q1

02468101214

Qg, GATE CHARGE (nC)

, GATE-SOURCE VOLTAGE (V)

ID = 4.5A VDS = 10V

20V

30V

100

200

300

400

500

600

700

800

900

0 1

02030405060

VDS, DRAIN TO SOURCE VOL TAG E (V)

CAPACITANCE (pF)

CISS

CRSS

COSS

f = 1MHz

VGS = 0 V

Figure 17. Gate Charge Characteristics. Figure 18. Capacitance Characteristics.

0.01

0.1

100

0.1 1 10 100

VDS, DRAIN-SOUR CE V O LTAGE (V)

, DRAIN CURRENT (A)

DC 1s

100ms10ms 1m

100µs

VGS= 10V

SINGLE PULSE

RθJA= 135oC/W

TA= 25oC

RDS(ON) LIMIT

0.01 0.1 1 10 100 1000

SINGLE PULSE TIME (SEC)

POWER (W)

SINGLE PULSE

RθJA = 135oC/W

TA = 25oC

Figure 19. Maximum Safe Operating Area. Figure 20. Single Pulse Maximum

Power Dissipation.

0.001

0.01

0.1

0.0001 0.001 0.01 0.1 1 10 100 1000

t1, TIME (sec)

r(t), NORMALIZED EFFECTIVE

TRANSIENT THERMAL RESISTANCE

RθJA(t) = r(t) + RθJA

RθJA = 135°C/W

TJ - TA = P * RθJA(t)

Duty Cycle, D = t1 / t2

P(pk)

t1t2

SINGLE PULSE

0.01

0.02

0.05

0.1

0.2

D = 0.5

Figure 21. Transient Thermal Response Curve.

Thermal characterization performed using the conditions described in Note 1c.

Transient thermal response will change depending on the circuit board design.

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FDS4559_F085 60V Complementary PowerTrench MOSFET ®

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