Si2323DS Vishay Siliconix P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (A) 0.039 at VGS = - 4.5 V - 4.7 0.052 at VGS = - 2.5 V - 4.1 0.068 at VGS = - 1.8 V - 3.5 * TrenchFET(R) Power MOSFET Pb-free Available APPLICATIONS * Load Switch * PA Switch RoHS* COMPLIANT TO-236 (SOT-23) G 1 D 3 S 2 Top View Si2323DS (D3)* * Marking Code Ordering Information: Si2323DS-T1 Si2323DS-T1-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise noted Parameter Symbol 5s Steady State Drain-Source Voltage VDS - 20 Gate-Source Voltage VGS 8 Continuous Drain Current (TJ = 150 C)a, b TA = 25 C TA = 70 C ID Continuous Source Current (Diode Conduction)a, b Maximum Power Dissipationa, b IS TA = 25 C TA = 70 C PD - 3.7 - 3.8 - 2.9 - 20 - 1.0 - 0.6 1.25 0.75 0.8 0.48 TJ, Tstg Operating Junction and Storage Temperature Range V - 4.7 IDM Pulsed Drain Current Unit - 55 to 150 A W C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient Symbol a Maximum Junction-to-Foot (Drain) t5s Steady State Steady State RthJA RthJF Typical Maximum 75 100 120 166 40 50 Unit C/W Notes: a. Surface Mounted on 1" x 1" FR4 board. b. Pulse width limited by maximum junction temperature. * Pb containing terminations are not RoHS compliant, exemptions may apply. Document Number: 72024 S-81954-Rev. C, 25-Aug-08 www.vishay.com 1 Si2323DS Vishay Siliconix SPECIFICATIONS TJ = 25 C, unless otherwise noted Limits Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage V(BR)DSS VGS = 0 V, ID = - 250 A - 20 VGS(th) VDS = VGS, ID = - 250 A - 0.40 IGSS VDS = 0 V, VGS = 8 V 100 VDS = - 16 V, VGS = 0 V -1 VDS = - 16 V, VGS = 0 V, TJ = 55 C - 10 Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-Resistancea RDS(on) VDS - 5 V, VGS = - 4.5 V - 1.0 - 20 V nA A A VGS = - 4.5 V, ID = - 4.7 A 0.031 0.039 VGS = - 2.5 V, ID = - 4.1 A 0.041 0.052 VGS = - 1.8 V, ID = - 2.0 A 0.054 0.068 Forward Transconductancea gfs VDS = - 5 V, ID = - 4.7 A 16 Diode Forward Voltage VSD IS = - 1.0 A, VGS = 0 V - 0.7 - 1.2 12.5 19 S V b Dynamic Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS = - 10 V, VGS = - 4.5 V ID - 4.7 A nC 1.7 3.3 1020 VDS = - 10 V, VGS = 0 V, f = 1 MHz pF 191 140 Switchingc Turn-On Time Turn-Off Time td(on) tr td(off) tf VDD = - 10 V, RL = 10 ID - 1.0 A, VGEN = - 4.5 V RG = 6 25 40 43 65 71 110 48 75 ns Notes: a. Pulse test: PW 300 s, duty cycle 2 %. b. For DESIGN AID ONLY, not subject to production testing. c. Switching time is essentially independent of operating temperature. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 72024 S-81954-Rev. C, 25-Aug-08 Si2323DS Vishay Siliconix TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 20 20 VGS = 5 thru 2.5 V 16 2V I D - Drain Current (A) I D - Drain Current (A) 16 TC = - 55 C 12 8 1.5 V 4 25 C 125 C 12 8 4 1V 0 0 1 2 3 4 0 0.0 5 0.5 VDS - Drain-to-Source Voltage (V) 1.5 2.0 2.5 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 1800 0.15 1500 0.12 C - Capacitance (pF) R DS(on) - On-Resistance () 1.0 0.09 VGS = 1.8 V 0.06 VGS = 2.5 V 1200 Ciss 900 600 0.03 300 VGS = 4.5 V Coss Crss 0 0.00 0 4 8 12 16 0 20 4 8 16 20 VDS - Drain-to-Source Voltage (V) ID - Drain Current (A) Capacitance On-Resistance vs. Drain Current 1.5 5 1.4 VDS = 6 V ID = 4.7 A 1.3 3 2 1 VGS = 4.5 V ID = 4.7 A 1.2 (Normalized) 4 R DS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) 12 1.1 1.0 0.9 0.8 0.7 0 0 3 Document Number: 72024 S-81954-Rev. C, 25-Aug-08 6 9 12 15 0.6 - 50 - 25 0 25 50 75 100 125 Qg - Total Gate Charge (nC) TJ - Junction Temperature (C) Gate Charge On-Resistance vs. Junction Temperature 150 www.vishay.com 3 Si2323DS Vishay Siliconix TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 0.15 20 R DS(on) - On-Resistance () I S - Source Current (A) 10 TJ = 150 C TJ = 25 C 1 ID = 4.7 A 0.09 ID = 2 A 0.06 0.03 0.00 0.1 0.0 0.12 0.2 0.4 0.6 0.8 1.0 0 1.2 1 2 3 4 5 VGS - Gate-to-Source Voltage (V) VSD - Source-to-Drain Voltage (V) On-Resistance vs. Gate-to-Source Voltage Source-Drain Diode Forward Voltage 0.4 12 10 0.3 8 0.2 Power (W) VGS(th) Variance (V) ID = 140 A 0.1 0.0 6 4 TA = 25 C 2 - 0.1 - 0.2 - 50 0 - 25 0 25 50 75 100 125 150 0.01 0.1 TJ - Temperature (C) 1 10 100 600 Time (s) Threshold Voltage Single Pulse Power 100 IDM Limited Limited by RDS(on)* I D - Drain Current (A) 10 P(t) = 0.0001 P(t) = 0.001 1 0.1 ID(on) Limited P(t) = 0.01 TA = 25 C Single Pulse BVDSS Limited 0.01 0.1 1 P(t) = 0.1 P(t) = 1 P(t) = 10 DC 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area www.vishay.com 4 Document Number: 72024 S-81954-Rev. C, 25-Aug-08 Si2323DS Vishay Siliconix TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 t1 t2 1. Duty Cycle, D = 0.05 t1 t2 2. Per Unit Base = R thJA = 120 C/W 0.02 3. T JM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 100 600 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?72024. Document Number: 72024 S-81954-Rev. C, 25-Aug-08 www.vishay.com 5 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1