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Document Number: 72024
S-81954-Rev. C, 25-Aug-08
Vishay Siliconix
Si2323DS
Notes:
a. Pulse test: PW ≤ 300 µs, duty cycle ≤ 2 %.
b. For DESIGN AID ONLY, not subject to production testing.
c. Switching time is essentially independent of operating temperature.
Stresses beyond those listed under “Absolut e Maximum Ratings” may cause permanent damage to t he device. These are stress rating s only, and functiona l operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter Symbol Test Conditions
Limits
Unit
Min. Typ. Max.
Static
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = - 250 µA - 20 V
Gate-Threshold Voltage VGS(th) VDS = VGS, ID = - 250 µA - 0.40 - 1.0
Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 8 V ± 100 nA
Zero Gate Voltage Drain Current IDSS
VDS = - 16 V, VGS = 0 V - 1 µA
VDS = - 16 V, VGS = 0 V, TJ = 55 °C - 10
On-State Drain CurrentaID(on) V
DS ≤ - 5 V, VGS = - 4.5 V - 20 A
Drain-Source On-ResistanceaRDS(on)
VGS = - 4.5 V, ID = - 4.7 A 0.031 0.039
Ω
VGS = - 2.5 V, ID = - 4.1 A 0.041 0.052
VGS = - 1.8 V, ID = - 2.0 A 0.054 0.068
Forward Transconductanceagfs VDS = - 5 V, ID = - 4.7 A 16 S
Diode Forward Voltage VSD IS = - 1.0 A, VGS = 0 V - 0.7 - 1.2 V
Dynamicb
Total Gate Charge Qg
VDS = - 10 V, VGS = - 4.5 V
ID ≅ - 4.7 A
12.5 19
nCGate-Source Charge Qgs 1.7
Gate-Drain Charge Qgd 3.3
Input Capacitance Ciss
VDS = - 10 V, VGS = 0 V, f = 1 MHz
1020
pFOutput Capacitance Coss 191
Reverse Transfer Capacitance Crss 140
Switchingc
Tur n - O n T i m e td(on)
VDD = - 10 V, RL = 10 Ω
ID ≅ - 1.0 A, VGEN = - 4.5 V
RG = 6 Ω
25 40
ns
tr43 65
Turn-Off Time td(off) 71 110
tf48 75