Vishay Siliconix
Si2323DS
Document Number: 72024
S-81954-Rev. C, 25-Aug-08
www.vishay.com
1
P-Channel 20-V (D-S) MOSFET
FEATURES
TrenchFET® Power MOSFET
APPLICATIONS
Load Switch
PA Switch
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω)I
D (A)
- 20
0.039 at VGS = - 4.5 V - 4.7
0.052 at VGS = - 2.5 V - 4.1
0.068 at VGS = - 1.8 V - 3.5
G
S
D
Top V i ew
2
3
TO-236
(SOT-23)
1
Si2323DS (D3)*
* Marking Code
Ordering Information: Si2323DS-T1
Si2323DS-T1-E3 (Lead (Pb)-free)
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. Pulse width limited by maximum junction temperature.
* Pb containing terminations are not RoHS compliant, exemptions may apply.
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter Symbol 5 s Steady State Unit
Drain-Source Voltage VDS - 20 V
Gate-Source Voltage VGS ± 8
Continuous Drain Current (TJ = 150 °C)a, b TA = 25 °C ID
- 4.7 - 3.7
A
TA = 70 °C - 3.8 - 2.9
Pulsed Drain Current IDM - 20
Continuous Source Current (Diode Conduction)a, b IS- 1.0 - 0.6
Maximum Power Dissipationa, b TA = 25 °C PD
1.25 0.75 W
TA = 70 °C 0.8 0.48
Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
Maximum Junction-to-Ambientat 5 s RthJA
75 100
°C/W
Steady State 120 166
Maximum Junction-to-Foot (Drain) Steady State RthJF 40 50
Available
Pb-free
RoHS*
COMPLIANT
www.vishay.com
2
Document Number: 72024
S-81954-Rev. C, 25-Aug-08
Vishay Siliconix
Si2323DS
Notes:
a. Pulse test: PW 300 µs, duty cycle 2 %.
b. For DESIGN AID ONLY, not subject to production testing.
c. Switching time is essentially independent of operating temperature.
Stresses beyond those listed under “Absolut e Maximum Ratings” may cause permanent damage to t he device. These are stress rating s only, and functiona l operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter Symbol Test Conditions
Limits
Unit
Min. Typ. Max.
Static
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = - 250 µA - 20 V
Gate-Threshold Voltage VGS(th) VDS = VGS, ID = - 250 µA - 0.40 - 1.0
Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 8 V ± 100 nA
Zero Gate Voltage Drain Current IDSS
VDS = - 16 V, VGS = 0 V - 1 µA
VDS = - 16 V, VGS = 0 V, TJ = 55 °C - 10
On-State Drain CurrentaID(on) V
DS - 5 V, VGS = - 4.5 V - 20 A
Drain-Source On-ResistanceaRDS(on)
VGS = - 4.5 V, ID = - 4.7 A 0.031 0.039
Ω
VGS = - 2.5 V, ID = - 4.1 A 0.041 0.052
VGS = - 1.8 V, ID = - 2.0 A 0.054 0.068
Forward Transconductanceagfs VDS = - 5 V, ID = - 4.7 A 16 S
Diode Forward Voltage VSD IS = - 1.0 A, VGS = 0 V - 0.7 - 1.2 V
Dynamicb
Total Gate Charge Qg
VDS = - 10 V, VGS = - 4.5 V
ID - 4.7 A
12.5 19
nCGate-Source Charge Qgs 1.7
Gate-Drain Charge Qgd 3.3
Input Capacitance Ciss
VDS = - 10 V, VGS = 0 V, f = 1 MHz
1020
pFOutput Capacitance Coss 191
Reverse Transfer Capacitance Crss 140
Switchingc
Tur n - O n T i m e td(on)
VDD = - 10 V, RL = 10 Ω
ID - 1.0 A, VGEN = - 4.5 V
RG = 6 Ω
25 40
ns
tr43 65
Turn-Off Time td(off) 71 110
tf48 75
Document Number: 72024
S-81954-Rev. C, 25-Aug-08
www.vishay.com
3
Vishay Siliconix
Si2323DS
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Output Characteristics
On-Resistance vs. Drain Current
Gate Charge
0
4
8
12
16
20
012345
V
GS
= 5 thru 2.5 V
1 V
1.5 V
V
DS
- Drain-to-Source Voltage (V)
- Drain Current (A)ID
2 V
0.00
0.03
0.06
0.09
0.12
0.15
0 4 8 121620
VGS = 4.5 V
VGS = 2.5 V
- On-Resistance (Ω)RDS(on)
ID - Drain Current (A)
VGS = 1.8 V
0
1
2
3
4
5
03691215
VDS = 6 V
ID = 4.7 A
- Gate-to-Source Voltage (V)
Qg - Total Gate Charge (nC)
V
GS
Transfer Characteristics
Capacitance
On-Resistance vs. Junction Temperature
0
4
8
12
16
20
0.0 0.5 1.0 1.5 2.0 2.5
25 °C
125 °C
VGS
- Gate-to-Source Voltage (V)
- Drain Current (A)ID
TC = - 55 °C
0
300
600
900
1200
1500
1800
048121620
Crss
Coss
Ciss
VDS - Drain-to-Source Voltage (V)
C - Capacitance (pF)
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
- 50 - 25 0 25 50 75 100 125 150
VGS = 4.5 V
ID = 4.7 A
TJ - Junction Temperature (°C)
(Normalized)
- On-ResistanceRDS(on)
www.vishay.com
4
Document Number: 72024
S-81954-Rev. C, 25-Aug-08
Vishay Siliconix
Si2323DS
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Source-Drain Diode Forward Voltage
Threshold Voltage
1.0 1.2
0.1
10
20
0.0 0.2 0.4 0.6 0.8
TJ = 150 °C
VSD - Source-to-Drain Voltage (V)
- Source Current (A)IS
1
TJ = 25 °C
- 0.2
- 0.1
0.0
0.1
0.2
0.3
0.4
- 50 - 25 0 25 50 75 100 125 150
ID = 140 µA
Variance (V)VGS(th)
TJ - Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power
0.00
0.03
0.06
0.09
0.12
0.15
012345
ID = 4.7 A
- On-Resistance (Ω)RDS(on)
VGS - Gate-to-Source Voltage (V)
ID = 2 A
0.01
0
1
6
12
2
4
10 6000.1
Power (W)
Time (s)
8
10
100
TA = 25 °C
Safe Operating Area
100
1
0.1 1 10 100
0.01
10
TA = 25 °C
Single Pulse
- Drain Current (A)ID
P(t) = 10
DC
0.1
ID(on)
Limited
RDS(on)*
Limited by
BVDSS Limited
P(t) = 1
P(t) = 0.1
P(t) = 0.01
P(t) = 0.001
P(t) = 0.0001
IDM Limited
VDS - Drain-to-Source Voltage (V)
*V
GS > minimum VGS at which RDS(on) is specified
Document Number: 72024
S-81954-Rev. C, 25-Aug-08
www.vishay.com
5
Vishay Siliconix
Si2323DS
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?72024.
Normalized Thermal Transient Impedance, Junction-to-Ambient
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
2
1
0.1
0.01
10-3 10-2 1 10 60010-1
10-4
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
100
1. Duty Cycle, D =
2. Per Unit Base = RthJA = 120 °C/W
3. T JM - TA = PDMZthJA(t)
t1
t2
t1
t2
Notes:
4. Surface Mounted
PDM
Document Number: 91000 www.vishay.com
Revision: 18-Jul-08 1
Disclaimer
Legal Disclaimer Notice
Vishay
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.