SEMICONDUCTOR MMBTA55 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR AUDIO FREQUENCY AMPLIFIER APPLICATIONS. FEATURES Complementary to MMBTA05. E B L L H MAXIMUM RATING (Ta=25 CHARACTERISTIC 3 G A 2 D Driver Stage Application of 20 to 25 Watts Amplifiers. 1 ) SYMBOL RATING UNIT Collector-Base Voltage VCBO -60 V Collector-Emitter Voltage VCEO -60 V Emitter-Base Voltage VEBO -5 V Collector Current IC -500 mA Emitter Current IE 500 mA PC * 350 mW Junction Temperature Tj 150 Storage Temperature Tstg -55 150 Collector Power Dissipation * : Package Mounted On 99.5% Alumina 10 8 P J N M K C P MILLIMETERS _ 0.20 2.93 + 1.30+0.20/-0.15 1.30 MAX 0.45+0.15/-0.05 2.40+0.30/-0.20 1.90 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 MIN 1.00+0.20/-0.10 7 DIM A B C D E G H J K L M N P 1. EMITTER 2. BASE 3. COLLECTOR SOT-23 0.6mm. Marking Lot No. AMX Type Name ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC ) SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current ICBO VCB=-60V, IE=0 - - -100 nA Emitter Cut-off Current ICEO VCE=-60V, IB=0 - - -100 nA V(BR)CEO IC=-5mA, IB=0 -60 - - V hFE(1) VCE=-1V, IC=-10mA 100 - - hFE(2) VCE=-1V, IC=-100mA 100 - - VCE(sat) IC=-100mA, IB=-10mA - - -0.25 V Base-Emitter Voltage VBE VCE=-1V, IC=-100mA - - -1.2 V Transition Frequency fT VCE=-1V, IC=-100mA 50 - - MHz - 14 - pF Collector-Emitter Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage Collector Output Capacitance 2003. 7. 21 Revision No : 2 Cob VCB=-10V, IE=0, f=1MHz 1/1