© Semiconductor Components Industries, LLC, 2012
August, 2012 − Rev. 2
1Publication Order Number:
2N2905A/D
2N2905A
Small Signal Switching
Transistor
PNP Silicon
Features
•MIL−PRF−19500/290 Qualified
•Available as JAN, JANTX, and JANTXV
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Voltage VCEO −60 Vdc
Collector−Base Voltage VCBO −60 Vdc
Emitter−Base Voltage VEBO −5.0 Vdc
Collector Current − Continuous IC−600 mAdc
Total Device Dissipation @ TA = 25°C PT800 mW
Total Device Dissipation @ TC = 25°C PT3.0 W
Operating and Storage Junction
Temperature Range
TJ, Tstg −65 to +200 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction−to−Ambient RqJA 195 °C/W
Thermal Resistance, Junction−to−Case RqJC 50 °C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
COLLECTOR
3
2
BASE
1
EMITTER
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TO−39
CASE 205AB
STYLE 1
Device Package Shipping
ORDERING INFORMATION
JAN2N2905A
JANTX2N2905A TO−39 Bulk
JANTXV2N2905A
2N2905A
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2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (Note 1)
(IC = −10 mAdc)
V(BR)CEO −60 −
Vdc
Collector−Emitter Cutoff Current
(VCE = −60 Vdc)
ICES − −1.0
mAdc
Collector−Base Cutoff Current
(VCB = −50 Vdc)
(VCB = −60 Vdc)
ICBO −
−
−10
−10
nAdc
mAdc
Emitter−Base Cutoff Current
(VEB = −5.0 Vdc)
(VEB = −3.5 Vdc)
IEBO −
−
−10
−50
mAdc
nAdc
ON CHARACTERISTICS (Note 1)
DC Current Gain
(IC = −0.1 mAdc, VCE = −10 Vdc)
(IC = −1.0 mAdc, VCE = −10 Vdc)
(IC = −10 mAdc, VCE = −10 Vdc)
(IC = −150 mAdc, VCE = −10 Vdc)
(IC = −500 mAdc, VCE = −10 Vdc)
hFE 75
100
100
100
50
−
450
−
300
−
−
Collector−Emitter Saturation Voltage
(IC = −150 mAdc, IB = −15 mAdc)
(IC = −500 mAdc, IB = −50 mAdc)
VCE(sat) −
−
−0.4
−1.6
Vdc
Base−Emitter Saturation Voltage
(IC = −150 mAdc, IB = −15 mAdc)
(IC = −500 mAdc, IB = −50 mAdc)
VBE(sat) −
−
−1.3
−2.6
Vdc
SMALL−SIGNAL CHARACTERISTICS
Magnitude of Small Signal Current Gain
(IC = −50 mAdc, VCE = −20 Vdc, f = 100 MHz)
|hfe|
2.0 −
−
Small Signal Current Gain
(IC = −1.0 mAdc, VCE = −10 Vdc, f = 1 kHz)
hfe 100 −
−
Output Capacitance (VCB = −10 Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz) Cobo −8.0 pF
Input Capacitance (VEB = −2.0 Vdc, IC = 0, 100 kHz ≤ f ≤ 1.0 MHz) Cibo −30 pF
SWITCHING CHARACTERISTICS
Turn−On Time
(Reference Figure in MIL−PRF−19500/290)
ton −45 ns
Turn−Off Time
(Reference Figure in MIL−PRF−19500/290)
toff −300 ns
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
2N2905A
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3
PACKAGE DIMENSIONS
TO−39 3−Lead
CASE 205AB
ISSUE A
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
SEATING
PLANE
RF
B
C
K
L
P
D
3X
M
H
J
S
B0.007 (0.18MM) C M
A
N
DIM MIN MAX MIN MAX
INCHESMILLIMETERS
A0.350 0.3708.89 9.40
B0.315 0.3358.00 8.51
C0.240 0.2606.10 6.60
D0.016 0.0190.41 0.48
E0.009 0.1250.23 3.18
F0.016 0.0190.41 0.48
N0.200 BSC5.08 BSC
H0.028 0.0340.71 0.86
J0.029 0.0400.73 1.02
K0.500 0.58012.70 14.73
L0.250 ---6.35 ---
M45 BSC45 BSC
R0.054 BSC1.37 BSC
P--- 0.050--- 1.27
__
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. DIMENSION J MEASURED FROM DIAMETER A TO EDGE.
4. LEAD TRUE POSITION TO BE DETERMINED AT THE GUAGE
PLANE DEFINED BY DIMENSION R.
5. DIMENSION F APPLIES BETWEEN DIMENSION P AND L.
6. DIMENSION D APPLIES BETWEEN DIMENSION L AND K.
7. BODY CONTOUR OPTIONAL WITHIN ZONE DEFINED BY DIMEN
SIONS A, B, AND T.
8. DIMENSION B SHALL NOT VARY MORE THAN 0.010 IN ZONE P.
T--- 0.030--- 0.76
U0.100 ---2.54 ---
A
B
A
DETAIL X
U
NOTE 5
NOTES 4 & 6
C
U
E
2
31
DETAIL X
NOTE 7
T
LEAD IDENTIFICATION
DETAIL
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